TW200615406A - Seed and seedholder combinations for high quality growth of large silicon carbide single crystals - Google Patents

Seed and seedholder combinations for high quality growth of large silicon carbide single crystals

Info

Publication number
TW200615406A
TW200615406A TW094125012A TW94125012A TW200615406A TW 200615406 A TW200615406 A TW 200615406A TW 094125012 A TW094125012 A TW 094125012A TW 94125012 A TW94125012 A TW 94125012A TW 200615406 A TW200615406 A TW 200615406A
Authority
TW
Taiwan
Prior art keywords
seed
silicon carbide
seed crystal
crucible
major
Prior art date
Application number
TW094125012A
Other languages
English (en)
Other versions
TWI301161B (en
Inventor
Stephan Georg Mueller
Adrian Powell
Valeri F Tsvetkov
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of TW200615406A publication Critical patent/TW200615406A/zh
Application granted granted Critical
Publication of TWI301161B publication Critical patent/TWI301161B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW094125012A 2004-08-10 2005-07-22 Silicon carbide growth system and seeded sublimation method TWI301161B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/915,095 US7192482B2 (en) 2004-08-10 2004-08-10 Seed and seedholder combinations for high quality growth of large silicon carbide single crystals

Publications (2)

Publication Number Publication Date
TW200615406A true TW200615406A (en) 2006-05-16
TWI301161B TWI301161B (en) 2008-09-21

Family

ID=34979929

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094125012A TWI301161B (en) 2004-08-10 2005-07-22 Silicon carbide growth system and seeded sublimation method

Country Status (9)

Country Link
US (2) US7192482B2 (zh)
EP (2) EP1786956B1 (zh)
JP (1) JP4979579B2 (zh)
KR (1) KR100855655B1 (zh)
CN (1) CN101027433B (zh)
AT (1) ATE508215T1 (zh)
DE (1) DE602005027853D1 (zh)
TW (1) TWI301161B (zh)
WO (1) WO2006019692A1 (zh)

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US7314520B2 (en) 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
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US8980445B2 (en) * 2006-07-06 2015-03-17 Cree, Inc. One hundred millimeter SiC crystal grown on off-axis seed
US9064706B2 (en) 2006-11-17 2015-06-23 Sumitomo Electric Industries, Ltd. Composite of III-nitride crystal on laterally stacked substrates
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US8088222B2 (en) * 2007-07-27 2012-01-03 Widetronix Inc. Method, system, and apparatus for the growth of on-axis SiC and similar semiconductor materials
US8163086B2 (en) * 2007-08-29 2012-04-24 Cree, Inc. Halogen assisted physical vapor transport method for silicon carbide growth
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CN101812723B (zh) * 2010-04-20 2012-04-11 上海硅酸盐研究所中试基地 基于物理气相传输技术生长碳化硅体单晶方法及其装置
CN102181655B (zh) * 2011-04-11 2012-11-07 江西稀有金属钨业控股集团有限公司 一种钽材质多级蒸馏坩埚和蒸馏工艺
US20130095294A1 (en) * 2011-10-17 2013-04-18 Sumitomo Electric Industries, Ltd. Silicon carbide ingot and silicon carbide substrate, and method of manufacturing the same
JP2013087005A (ja) * 2011-10-17 2013-05-13 Sumitomo Electric Ind Ltd 炭化珪素基板、炭化珪素インゴットおよびそれらの製造方法
KR101882317B1 (ko) * 2011-12-26 2018-07-27 엘지이노텍 주식회사 단결정 성장 장치 및 단결정 성장 방법
CN102703966B (zh) * 2012-05-28 2015-11-04 中国科学院力学研究所 一种籽晶温度梯度方法生长碳化硅单晶的装置
US10322936B2 (en) 2013-05-02 2019-06-18 Pallidus, Inc. High purity polysilocarb materials, applications and processes
US9919972B2 (en) 2013-05-02 2018-03-20 Melior Innovations, Inc. Pressed and self sintered polymer derived SiC materials, applications and devices
US9657409B2 (en) 2013-05-02 2017-05-23 Melior Innovations, Inc. High purity SiOC and SiC, methods compositions and applications
US11091370B2 (en) 2013-05-02 2021-08-17 Pallidus, Inc. Polysilocarb based silicon carbide materials, applications and devices
JP5854013B2 (ja) * 2013-09-13 2016-02-09 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
CN106929919A (zh) * 2015-12-29 2017-07-07 中国科学院上海硅酸盐研究所 一种碳化硅晶体生长用坩埚
CN106012002B (zh) * 2016-06-04 2018-06-19 山东大学 一种偏轴衬底用SiC晶体的生长及高电学均匀性的N型SiC衬底的制备方法
CN106435732B (zh) * 2016-08-30 2019-08-30 河北同光晶体有限公司 一种快速制备大尺寸SiC单晶晶棒的方法
CN106400116B (zh) * 2016-10-08 2019-01-08 中国科学院上海硅酸盐研究所 高质量碳化硅晶体生长用斜籽晶托以及生长高质量碳化硅晶体的方法
CN108070909A (zh) * 2016-11-17 2018-05-25 上海新昇半导体科技有限公司 坩埚、坩埚的制备方法及4H-SiC晶体的生长方法
JP6768492B2 (ja) 2016-12-26 2020-10-14 昭和電工株式会社 ＳｉＣインゴットの製造方法
CN109722711A (zh) * 2017-10-27 2019-05-07 上海新昇半导体科技有限公司 一种调控掺杂浓度的SiC生长方法及装置
JP6915526B2 (ja) * 2017-12-27 2021-08-04 信越半導体株式会社 炭化珪素単結晶の製造方法
JP6879236B2 (ja) * 2018-03-13 2021-06-02 信越半導体株式会社 炭化珪素単結晶の製造方法
JP7255089B2 (ja) * 2018-05-25 2023-04-11 株式会社デンソー 炭化珪素単結晶製造装置および炭化珪素単結晶の製造方法
CN108977886A (zh) * 2018-08-20 2018-12-11 孙月静 一种SiC晶体的制造方法
CN109234810A (zh) * 2018-10-31 2019-01-18 福建北电新材料科技有限公司 一种无需粘结籽晶的碳化硅单晶生长装置
USD939663S1 (en) * 2019-04-25 2021-12-28 Somavac Medical Solutions, Inc. Internal fluid filter
JP7393900B2 (ja) * 2019-09-24 2023-12-07 一般財団法人電力中央研究所 炭化珪素単結晶ウェハ及び炭化珪素単結晶インゴットの製造方法
JP2023508691A (ja) 2019-12-27 2023-03-03 ウルフスピード インコーポレイテッド 大口径炭化ケイ素ウェハ
CN111349971B (zh) * 2020-03-30 2021-04-23 福建北电新材料科技有限公司 晶体原料盛载装置及晶体生长装置
CN113005511B (zh) * 2021-02-23 2022-04-08 山东天岳先进科技股份有限公司 一种高质量碳化硅晶体的生长方法及装置
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CN115537927B (zh) * 2022-12-01 2023-03-10 浙江晶越半导体有限公司 一种制备低基平面位错的碳化硅单晶晶锭生长系统及方法
CN116463728B (zh) * 2023-06-19 2023-08-15 通威微电子有限公司 生长高质量碳化硅晶体的装置及方法
CN116815320B (zh) * 2023-06-28 2024-01-12 通威微电子有限公司 碳化硅晶体生长装置、方法及碳化硅晶体
CN118461149A (zh) * 2024-07-09 2024-08-09 湖南三安半导体有限责任公司 籽晶及其制作方法、长晶工艺的多型率测试方法

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Also Published As

Publication number Publication date
ATE508215T1 (de) 2011-05-15
JP2008509872A (ja) 2008-04-03
US20060032434A1 (en) 2006-02-16
EP2388359B1 (en) 2023-05-10
TWI301161B (en) 2008-09-21
WO2006019692A1 (en) 2006-02-23
EP2388359A3 (en) 2014-03-26
US7364617B2 (en) 2008-04-29
CN101027433A (zh) 2007-08-29
US20070157874A1 (en) 2007-07-12
EP1786956B1 (en) 2011-05-04
JP4979579B2 (ja) 2012-07-18
DE602005027853D1 (de) 2011-06-16
EP1786956A1 (en) 2007-05-23
EP2388359A2 (en) 2011-11-23
KR100855655B1 (ko) 2008-09-03
KR20070040406A (ko) 2007-04-16
CN101027433B (zh) 2010-05-05
US7192482B2 (en) 2007-03-20

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