DE602005027853D1 - Verfahren und anlage mit saathalter zur züchtung von siliziumkarbideinkristalle - Google Patents
Verfahren und anlage mit saathalter zur züchtung von siliziumkarbideinkristalleInfo
- Publication number
- DE602005027853D1 DE602005027853D1 DE602005027853T DE602005027853T DE602005027853D1 DE 602005027853 D1 DE602005027853 D1 DE 602005027853D1 DE 602005027853 T DE602005027853 T DE 602005027853T DE 602005027853 T DE602005027853 T DE 602005027853T DE 602005027853 D1 DE602005027853 D1 DE 602005027853D1
- Authority
- DE
- Germany
- Prior art keywords
- seed crystal
- seed
- crucible
- major
- seed holder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
- C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/911—Seed or rod holders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/915,095 US7192482B2 (en) | 2004-08-10 | 2004-08-10 | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
PCT/US2005/024560 WO2006019692A1 (en) | 2004-08-10 | 2005-07-12 | Seed and seedholder combinations for high quality growth of large silicon carbide single crystals |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005027853D1 true DE602005027853D1 (de) | 2011-06-16 |
Family
ID=34979929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005027853T Active DE602005027853D1 (de) | 2004-08-10 | 2005-07-12 | Verfahren und anlage mit saathalter zur züchtung von siliziumkarbideinkristalle |
Country Status (9)
Country | Link |
---|---|
US (2) | US7192482B2 (de) |
EP (2) | EP2388359B1 (de) |
JP (1) | JP4979579B2 (de) |
KR (1) | KR100855655B1 (de) |
CN (1) | CN101027433B (de) |
AT (1) | ATE508215T1 (de) |
DE (1) | DE602005027853D1 (de) |
TW (1) | TWI301161B (de) |
WO (1) | WO2006019692A1 (de) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7314520B2 (en) | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low 1c screw dislocation 3 inch silicon carbide wafer |
CN101448984B (zh) * | 2006-05-18 | 2012-02-22 | 昭和电工株式会社 | 制造碳化硅单晶的方法 |
US8980445B2 (en) * | 2006-07-06 | 2015-03-17 | Cree, Inc. | One hundred millimeter SiC crystal grown on off-axis seed |
JP5332168B2 (ja) * | 2006-11-17 | 2013-11-06 | 住友電気工業株式会社 | Iii族窒化物結晶の製造方法 |
US9064706B2 (en) | 2006-11-17 | 2015-06-23 | Sumitomo Electric Industries, Ltd. | Composite of III-nitride crystal on laterally stacked substrates |
JP2008311541A (ja) * | 2007-06-18 | 2008-12-25 | Fuji Electric Device Technology Co Ltd | 炭化珪素半導体基板の製造方法 |
US8088222B2 (en) * | 2007-07-27 | 2012-01-03 | Widetronix Inc. | Method, system, and apparatus for the growth of on-axis SiC and similar semiconductor materials |
US8163086B2 (en) * | 2007-08-29 | 2012-04-24 | Cree, Inc. | Halogen assisted physical vapor transport method for silicon carbide growth |
US9228274B2 (en) * | 2008-12-08 | 2016-01-05 | Ii-Vi Incorporated | Axial gradient transport growth process and apparatus utilizing resistive heating |
DE102009016134A1 (de) | 2009-04-03 | 2010-10-07 | Sicrystal Ag | Herstellungsverfahren für einen Volumeneinkristall mittels eines angepassten Keimkristalls und defektarmes einkristallines Substrat |
CN101812723B (zh) * | 2010-04-20 | 2012-04-11 | 上海硅酸盐研究所中试基地 | 基于物理气相传输技术生长碳化硅体单晶方法及其装置 |
CN102181655B (zh) * | 2011-04-11 | 2012-11-07 | 江西稀有金属钨业控股集团有限公司 | 一种钽材质多级蒸馏坩埚和蒸馏工艺 |
US20130095294A1 (en) * | 2011-10-17 | 2013-04-18 | Sumitomo Electric Industries, Ltd. | Silicon carbide ingot and silicon carbide substrate, and method of manufacturing the same |
JP2013087005A (ja) * | 2011-10-17 | 2013-05-13 | Sumitomo Electric Ind Ltd | 炭化珪素基板、炭化珪素インゴットおよびそれらの製造方法 |
KR101882317B1 (ko) * | 2011-12-26 | 2018-07-27 | 엘지이노텍 주식회사 | 단결정 성장 장치 및 단결정 성장 방법 |
CN102703966B (zh) * | 2012-05-28 | 2015-11-04 | 中国科学院力学研究所 | 一种籽晶温度梯度方法生长碳化硅单晶的装置 |
US9919972B2 (en) | 2013-05-02 | 2018-03-20 | Melior Innovations, Inc. | Pressed and self sintered polymer derived SiC materials, applications and devices |
US9657409B2 (en) | 2013-05-02 | 2017-05-23 | Melior Innovations, Inc. | High purity SiOC and SiC, methods compositions and applications |
US10322936B2 (en) | 2013-05-02 | 2019-06-18 | Pallidus, Inc. | High purity polysilocarb materials, applications and processes |
US11091370B2 (en) | 2013-05-02 | 2021-08-17 | Pallidus, Inc. | Polysilocarb based silicon carbide materials, applications and devices |
JP5854013B2 (ja) * | 2013-09-13 | 2016-02-09 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
CN106929919A (zh) * | 2015-12-29 | 2017-07-07 | 中国科学院上海硅酸盐研究所 | 一种碳化硅晶体生长用坩埚 |
CN106012002B (zh) * | 2016-06-04 | 2018-06-19 | 山东大学 | 一种偏轴衬底用SiC晶体的生长及高电学均匀性的N型SiC衬底的制备方法 |
CN106435732B (zh) * | 2016-08-30 | 2019-08-30 | 河北同光晶体有限公司 | 一种快速制备大尺寸SiC单晶晶棒的方法 |
CN106400116B (zh) * | 2016-10-08 | 2019-01-08 | 中国科学院上海硅酸盐研究所 | 高质量碳化硅晶体生长用斜籽晶托以及生长高质量碳化硅晶体的方法 |
CN108070909A (zh) * | 2016-11-17 | 2018-05-25 | 上海新昇半导体科技有限公司 | 坩埚、坩埚的制备方法及4H-SiC晶体的生长方法 |
JP6768492B2 (ja) * | 2016-12-26 | 2020-10-14 | 昭和電工株式会社 | SiCインゴットの製造方法 |
CN109722711A (zh) * | 2017-10-27 | 2019-05-07 | 上海新昇半导体科技有限公司 | 一种调控掺杂浓度的SiC生长方法及装置 |
JP6915526B2 (ja) * | 2017-12-27 | 2021-08-04 | 信越半導体株式会社 | 炭化珪素単結晶の製造方法 |
JP6879236B2 (ja) * | 2018-03-13 | 2021-06-02 | 信越半導体株式会社 | 炭化珪素単結晶の製造方法 |
JP7255089B2 (ja) * | 2018-05-25 | 2023-04-11 | 株式会社デンソー | 炭化珪素単結晶製造装置および炭化珪素単結晶の製造方法 |
CN108977886A (zh) * | 2018-08-20 | 2018-12-11 | 孙月静 | 一种SiC晶体的制造方法 |
CN109234810A (zh) * | 2018-10-31 | 2019-01-18 | 福建北电新材料科技有限公司 | 一种无需粘结籽晶的碳化硅单晶生长装置 |
USD939663S1 (en) * | 2019-04-25 | 2021-12-28 | Somavac Medical Solutions, Inc. | Internal fluid filter |
CN111349971B (zh) | 2020-03-30 | 2021-04-23 | 福建北电新材料科技有限公司 | 晶体原料盛载装置及晶体生长装置 |
CN113005511B (zh) * | 2021-02-23 | 2022-04-08 | 山东天岳先进科技股份有限公司 | 一种高质量碳化硅晶体的生长方法及装置 |
CN115537927B (zh) * | 2022-12-01 | 2023-03-10 | 浙江晶越半导体有限公司 | 一种制备低基平面位错的碳化硅单晶晶锭生长系统及方法 |
CN116463728B (zh) * | 2023-06-19 | 2023-08-15 | 通威微电子有限公司 | 生长高质量碳化硅晶体的装置及方法 |
CN116815320B (zh) * | 2023-06-28 | 2024-01-12 | 通威微电子有限公司 | 碳化硅晶体生长装置、方法及碳化硅晶体 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
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US5011549A (en) * | 1987-10-26 | 1991-04-30 | North Carolina State University | Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon |
US4866005A (en) | 1987-10-26 | 1989-09-12 | North Carolina State University | Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide |
US4865685A (en) | 1987-11-03 | 1989-09-12 | North Carolina State University | Dry etching of silicon carbide |
US5958132A (en) | 1991-04-18 | 1999-09-28 | Nippon Steel Corporation | SiC single crystal and method for growth thereof |
US5433167A (en) * | 1992-02-04 | 1995-07-18 | Sharp Kabushiki Kaisha | Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal |
US5563428A (en) | 1995-01-30 | 1996-10-08 | Ek; Bruce A. | Layered structure of a substrate, a dielectric layer and a single crystal layer |
JP3717562B2 (ja) * | 1995-09-21 | 2005-11-16 | 株式会社豊田中央研究所 | 単結晶の製造方法 |
US5746827A (en) * | 1995-12-27 | 1998-05-05 | Northrop Grumman Corporation | Method of producing large diameter silicon carbide crystals |
US5718760A (en) | 1996-02-05 | 1998-02-17 | Cree Research, Inc. | Growth of colorless silicon carbide crystals |
JP4174847B2 (ja) * | 1998-03-26 | 2008-11-05 | 株式会社デンソー | 単結晶の製造方法 |
JP2000044394A (ja) | 1998-07-29 | 2000-02-15 | Toyota Central Res & Dev Lab Inc | 炭化珪素単結晶の製造方法 |
JP4614539B2 (ja) | 1999-02-19 | 2011-01-19 | エスアイクリスタル アクチエンゲゼルシャフト | α‐SiC塊状単結晶の成長方法 |
US6396080B2 (en) | 1999-05-18 | 2002-05-28 | Cree, Inc | Semi-insulating silicon carbide without vanadium domination |
US6218680B1 (en) | 1999-05-18 | 2001-04-17 | Cree, Inc. | Semi-insulating silicon carbide without vanadium domination |
JP4509258B2 (ja) | 1999-08-30 | 2010-07-21 | 独立行政法人産業技術総合研究所 | 単結晶の成長装置および製造方法 |
US6507046B2 (en) | 2001-05-11 | 2003-01-14 | Cree, Inc. | High-resistivity silicon carbide substrate for semiconductor devices with high break down voltage |
US6706114B2 (en) | 2001-05-21 | 2004-03-16 | Cree, Inc. | Methods of fabricating silicon carbide crystals |
US6849874B2 (en) | 2001-10-26 | 2005-02-01 | Cree, Inc. | Minimizing degradation of SiC bipolar semiconductor devices |
US7220313B2 (en) | 2003-07-28 | 2007-05-22 | Cree, Inc. | Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient |
US7147715B2 (en) | 2003-07-28 | 2006-12-12 | Cree, Inc. | Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen |
US6814801B2 (en) | 2002-06-24 | 2004-11-09 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
JP2004099340A (ja) * | 2002-09-05 | 2004-04-02 | Nippon Steel Corp | 炭化珪素単結晶育成用種結晶と炭化珪素単結晶インゴット及びその製造方法 |
US6964917B2 (en) | 2003-04-08 | 2005-11-15 | Cree, Inc. | Semi-insulating silicon carbide produced by Neutron transmutation doping |
-
2004
- 2004-08-10 US US10/915,095 patent/US7192482B2/en active Active
-
2005
- 2005-07-12 WO PCT/US2005/024560 patent/WO2006019692A1/en active Application Filing
- 2005-07-12 DE DE602005027853T patent/DE602005027853D1/de active Active
- 2005-07-12 CN CN2005800324902A patent/CN101027433B/zh active Active
- 2005-07-12 EP EP11164528.9A patent/EP2388359B1/de active Active
- 2005-07-12 JP JP2007525620A patent/JP4979579B2/ja active Active
- 2005-07-12 EP EP05770685A patent/EP1786956B1/de active Active
- 2005-07-12 AT AT05770685T patent/ATE508215T1/de not_active IP Right Cessation
- 2005-07-12 KR KR1020077004689A patent/KR100855655B1/ko active IP Right Grant
- 2005-07-22 TW TW094125012A patent/TWI301161B/zh active
-
2007
- 2007-02-05 US US11/671,015 patent/US7364617B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
ATE508215T1 (de) | 2011-05-15 |
KR100855655B1 (ko) | 2008-09-03 |
CN101027433A (zh) | 2007-08-29 |
EP2388359B1 (de) | 2023-05-10 |
EP1786956A1 (de) | 2007-05-23 |
EP2388359A3 (de) | 2014-03-26 |
US20070157874A1 (en) | 2007-07-12 |
KR20070040406A (ko) | 2007-04-16 |
CN101027433B (zh) | 2010-05-05 |
JP2008509872A (ja) | 2008-04-03 |
WO2006019692A1 (en) | 2006-02-23 |
TW200615406A (en) | 2006-05-16 |
EP2388359A2 (de) | 2011-11-23 |
TWI301161B (en) | 2008-09-21 |
US7192482B2 (en) | 2007-03-20 |
US20060032434A1 (en) | 2006-02-16 |
JP4979579B2 (ja) | 2012-07-18 |
US7364617B2 (en) | 2008-04-29 |
EP1786956B1 (de) | 2011-05-04 |
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