TW200609666A - Photomask blank, photomask manufacturing method and semiconductor device manufacturing method - Google Patents

Photomask blank, photomask manufacturing method and semiconductor device manufacturing method

Info

Publication number
TW200609666A
TW200609666A TW094123340A TW94123340A TW200609666A TW 200609666 A TW200609666 A TW 200609666A TW 094123340 A TW094123340 A TW 094123340A TW 94123340 A TW94123340 A TW 94123340A TW 200609666 A TW200609666 A TW 200609666A
Authority
TW
Taiwan
Prior art keywords
dry etching
light shielding
photomask
shielding film
manufacturing
Prior art date
Application number
TW094123340A
Other languages
English (en)
Inventor
Atsushi Kominato
Takeyuki Yamada
Minoru Sakamoto
Masahiro Hashimoto
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200609666A publication Critical patent/TW200609666A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW094123340A 2004-07-09 2005-07-08 Photomask blank, photomask manufacturing method and semiconductor device manufacturing method TW200609666A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004202621 2004-07-09

Publications (1)

Publication Number Publication Date
TW200609666A true TW200609666A (en) 2006-03-16

Family

ID=35783882

Family Applications (4)

Application Number Title Priority Date Filing Date
TW097141736A TW200909999A (en) 2004-07-09 2005-07-08 Photomask blank, photomask manufacturing method and semiconductor device manufacturing method
TW094123340A TW200609666A (en) 2004-07-09 2005-07-08 Photomask blank, photomask manufacturing method and semiconductor device manufacturing method
TW097141735A TWI446102B (zh) 2004-07-09 2005-07-08 Mask blank and mask
TW097141734A TW200909997A (en) 2004-07-09 2005-07-08 Photomask blank, photomask manufacturing method and semiconductor device manufacturing method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW097141736A TW200909999A (en) 2004-07-09 2005-07-08 Photomask blank, photomask manufacturing method and semiconductor device manufacturing method

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW097141735A TWI446102B (zh) 2004-07-09 2005-07-08 Mask blank and mask
TW097141734A TW200909997A (en) 2004-07-09 2005-07-08 Photomask blank, photomask manufacturing method and semiconductor device manufacturing method

Country Status (6)

Country Link
US (1) US20080305406A1 (zh)
JP (4) JP2008304956A (zh)
KR (1) KR101302630B1 (zh)
DE (1) DE112005001588B4 (zh)
TW (4) TW200909999A (zh)
WO (1) WO2006006540A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI407247B (zh) * 2005-12-21 2013-09-01 Hoya Corp Mask base and mask

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DE602006021102D1 (de) 2005-07-21 2011-05-19 Shinetsu Chemical Co Photomaskenrohling, Photomaske und deren Herstellungsverfahren
JP2007212738A (ja) * 2006-02-09 2007-08-23 Ulvac Seimaku Kk フォトマスクブランクス及びその製造方法、並びに該フォトマスクブランクスを用いたフォトマスクの製造方法
JP5356784B2 (ja) * 2008-11-19 2013-12-04 Ｈｏｙａ株式会社 フォトマスクブランクの製造方法及びフォトマスクの製造方法
JP5401135B2 (ja) * 2009-03-18 2014-01-29 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法、荷電粒子ビーム描画装置及びプログラム
JP6077217B2 (ja) * 2012-03-27 2017-02-08 Hoya株式会社 液晶表示装置製造用位相シフトマスクブランク、及び位相シフトマスクの製造方法
JP5795991B2 (ja) 2012-05-16 2015-10-14 信越化学工業株式会社 フォトマスクブランク、フォトマスクの製造方法、および位相シフトマスクの製造方法
CN103034045B (zh) * 2012-12-12 2015-06-03 京东方科技集团股份有限公司 一种半色调掩模板及其制造方法
JP2015099183A (ja) * 2013-11-18 2015-05-28 Hoya株式会社 フォトマスクの製造方法およびパターン転写方法
JP6455979B2 (ja) * 2014-03-18 2019-01-23 Hoya株式会社 レジスト層付ブランク、その製造方法、マスクブランクおよびインプリント用モールドブランク、ならびに転写用マスク、インプリント用モールドおよびそれらの製造方法
JP5779290B1 (ja) * 2014-03-28 2015-09-16 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、位相シフトマスク、および半導体デバイスの製造方法
JP6708247B2 (ja) * 2014-07-30 2020-06-10 信越化学工業株式会社 フォトマスクブランク
JP6675156B2 (ja) * 2014-07-30 2020-04-01 信越化学工業株式会社 フォトマスクブランクの設計方法
JP6158460B1 (ja) * 2015-11-06 2017-07-05 Hoya株式会社 マスクブランク、位相シフトマスクの製造方法、及び半導体デバイスの製造方法
EP4392827A1 (en) * 2022-03-25 2024-07-03 Photronics, Inc. System, method and program product for photomask surface treatment

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI407247B (zh) * 2005-12-21 2013-09-01 Hoya Corp Mask base and mask

Also Published As

Publication number Publication date
TW200909997A (en) 2009-03-01
TWI446102B (zh) 2014-07-21
WO2006006540A1 (ja) 2006-01-19
JP2009230151A (ja) 2009-10-08
TW200909999A (en) 2009-03-01
DE112005001588B4 (de) 2021-02-25
US20080305406A1 (en) 2008-12-11
JP2008304955A (ja) 2008-12-18
JP2008304956A (ja) 2008-12-18
KR20070043828A (ko) 2007-04-25
JP5185888B2 (ja) 2013-04-17
JP2009020532A (ja) 2009-01-29
KR101302630B1 (ko) 2013-09-03
DE112005001588T5 (de) 2007-05-24
TW200909998A (en) 2009-03-01

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