TW200608606A - Vertical structure semiconductor devices with improved light output - Google Patents

Vertical structure semiconductor devices with improved light output

Info

Publication number
TW200608606A
TW200608606A TW094120645A TW94120645A TW200608606A TW 200608606 A TW200608606 A TW 200608606A TW 094120645 A TW094120645 A TW 094120645A TW 94120645 A TW94120645 A TW 94120645A TW 200608606 A TW200608606 A TW 200608606A
Authority
TW
Taiwan
Prior art keywords
semiconductor devices
light output
forming
light emitting
emitting layer
Prior art date
Application number
TW094120645A
Other languages
English (en)
Other versions
TWI433343B (zh
Inventor
Myung-Cheol Yoo
Dong-Woo Kim
Geun-Young Yeom
Original Assignee
Verticle Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Verticle Inc filed Critical Verticle Inc
Publication of TW200608606A publication Critical patent/TW200608606A/zh
Application granted granted Critical
Publication of TWI433343B publication Critical patent/TWI433343B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005Processes
    • H01L33/0093Wafer bonding; Removal of the growth substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/405Reflective materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
TW094120645A 2004-06-22 2005-06-21 具有改良光輸出的垂直構造半導體裝置 TWI433343B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US58209804P 2004-06-22 2004-06-22

Publications (2)

Publication Number Publication Date
TW200608606A true TW200608606A (en) 2006-03-01
TWI433343B TWI433343B (zh) 2014-04-01

Family

ID=35782383

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120645A TWI433343B (zh) 2004-06-22 2005-06-21 具有改良光輸出的垂直構造半導體裝置

Country Status (7)

Country Link
US (2) US20060006554A1 (zh)
EP (1) EP1769539A4 (zh)
JP (1) JP2008503900A (zh)
KR (1) KR101335342B1 (zh)
CN (1) CN101027777B (zh)
TW (1) TWI433343B (zh)
WO (1) WO2006002427A2 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI395345B (zh) * 2006-04-12 2013-05-01 Semi Photonics Co Ltd 具有低熱阻之發光二極體燈
US9911896B2 (en) 2006-12-22 2018-03-06 Koninklijke Phillips N.V. Semiconductor light emitting device growing active layer on textured surface

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7067849B2 (en) 2001-07-17 2006-06-27 Lg Electronics Inc. Diode having high brightness and method thereof
US6949395B2 (en) 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US7148520B2 (en) 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
TWI344706B (en) * 2003-06-04 2011-07-01 Myung Cheol Yoo Method of fabricating vertical structure compound semiconductor devices
WO2005088743A1 (en) * 2004-03-15 2005-09-22 Tinggi Technologies Private Limited Fabrication of semiconductor devices
EP1756875A4 (en) 2004-04-07 2010-12-29 Tinggi Technologies Private Ltd FABRICATION OF A RETROFLECTIVE LAYER ON SEMICONDUCTOR ELECTROLUMINESCENT DIODES
KR101254539B1 (ko) * 2004-04-28 2013-04-19 버티클 인코퍼레이티드 수직 구조 반도체 장치
TWI389334B (zh) * 2004-11-15 2013-03-11 Verticle Inc 製造及分離半導體裝置之方法
US7378288B2 (en) * 2005-01-11 2008-05-27 Semileds Corporation Systems and methods for producing light emitting diode array
SG130975A1 (en) * 2005-09-29 2007-04-26 Tinggi Tech Private Ltd Fabrication of semiconductor devices for light emission
US8614449B1 (en) 2005-10-11 2013-12-24 SemiLEDs Optoelectronics Co., Ltd. Protection for the epitaxial structure of metal devices
SG131803A1 (en) 2005-10-19 2007-05-28 Tinggi Tech Private Ltd Fabrication of transistors
US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof
SG133432A1 (en) * 2005-12-20 2007-07-30 Tinggi Tech Private Ltd Localized annealing during semiconductor device fabrication
US8101961B2 (en) * 2006-01-25 2012-01-24 Cree, Inc. Transparent ohmic contacts on light emitting diodes with growth substrates
US7928462B2 (en) 2006-02-16 2011-04-19 Lg Electronics Inc. Light emitting device having vertical structure, package thereof and method for manufacturing the same
US7399653B2 (en) * 2006-04-28 2008-07-15 Applied Materials, Inc. Nitride optoelectronic devices with backside deposition
US7593204B1 (en) * 2006-06-06 2009-09-22 Rf Micro Devices, Inc. On-chip ESD protection circuit for radio frequency (RF) integrated circuits
SG140473A1 (en) * 2006-08-16 2008-03-28 Tinggi Tech Private Ltd Improvements in external light efficiency of light emitting diodes
SG140512A1 (en) * 2006-09-04 2008-03-28 Tinggi Tech Private Ltd Electrical current distribution in light emitting devices
US7892891B2 (en) * 2006-10-11 2011-02-22 SemiLEDs Optoelectronics Co., Ltd. Die separation
US8921204B2 (en) 2006-10-11 2014-12-30 SemiLEDs Optoelectronics Co., Ltd. Method for fabricating semiconductor dice by separating a substrate from semiconductor structures using multiple laser pulses
JP5183913B2 (ja) * 2006-11-24 2013-04-17 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
TWI462324B (zh) * 2007-05-18 2014-11-21 Delta Electronics Inc 發光二極體裝置及其製造方法
US7683380B2 (en) * 2007-06-25 2010-03-23 Dicon Fiberoptics, Inc. High light efficiency solid-state light emitting structure and methods to manufacturing the same
DE102008038852B4 (de) * 2008-06-03 2024-02-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement
US7881030B1 (en) 2008-07-07 2011-02-01 Rf Micro Devices, Inc. Enhancement-mode field effect transistor based electrostatic discharge protection circuit
US7881029B1 (en) 2008-07-07 2011-02-01 Rf Micro Devices, Inc. Depletion-mode field effect transistor based electrostatic discharge protection circuit
US8580612B2 (en) * 2009-02-12 2013-11-12 Infineon Technologies Ag Chip assembly
US8900893B2 (en) * 2010-02-11 2014-12-02 Tsmc Solid State Lighting Ltd. Vertical LED chip package on TSV carrier
CN102130285B (zh) * 2010-11-03 2012-12-26 映瑞光电科技(上海)有限公司 发光二极管及其制造方法
CN102024898B (zh) * 2010-11-03 2013-03-27 西安神光安瑞光电科技有限公司 发光二极管及其制造方法
US9324905B2 (en) 2011-03-15 2016-04-26 Micron Technology, Inc. Solid state optoelectronic device with preformed metal support substrate
KR20130059026A (ko) * 2011-11-28 2013-06-05 서울옵토디바이스주식회사 에피층을 성장 기판으로부터 분리하는 방법
US8598611B2 (en) 2012-01-09 2013-12-03 Micron Technology, Inc. Vertical solid-state transducers and solid-state transducer arrays having backside terminals and associated systems and methods
KR101394565B1 (ko) * 2012-08-21 2014-05-14 한국산업기술대학교산학협력단 광 추출 향상 기술이 반영된 질화물 반도체 에피 구조의 기판 및 템플레이트 제조 방법
US9082748B2 (en) 2012-10-05 2015-07-14 Micron Technology, Inc. Devices, systems, and methods related to removing parasitic conduction in semiconductor devices
JP6307764B2 (ja) * 2013-09-30 2018-04-11 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
WO2015192874A1 (en) * 2014-06-16 2015-12-23 Siemens Aktiengesellschaft System and method for supplying an energy grid with energy from an intermittent renewable energy source
US11217735B2 (en) * 2015-02-20 2022-01-04 Luminus, Inc. LED package with surface textures and methods of formation
US10862002B2 (en) * 2018-04-27 2020-12-08 Facebook Technologies, Llc LED surface modification with ultraviolet laser
US11784288B2 (en) * 2018-10-26 2023-10-10 Google Llc Light-emitting diodes with integrated optical elements

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999694A (en) * 1989-08-18 1991-03-12 At&T Bell Laboratories Photodiode
US5331180A (en) * 1992-04-30 1994-07-19 Fujitsu Limited Porous semiconductor light emitting device
JPH06125143A (ja) * 1992-10-09 1994-05-06 Seiko Epson Corp 半導体レーザ素子
US5631190A (en) * 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
JPH08195505A (ja) * 1995-01-17 1996-07-30 Toshiba Corp 半導体発光素子及びその製造方法
JPH0964477A (ja) * 1995-08-25 1997-03-07 Toshiba Corp 半導体発光素子及びその製造方法
JPH10254370A (ja) * 1997-03-10 1998-09-25 Canon Inc 表示パネル及びそれを用いた投射型表示装置
JP3757544B2 (ja) * 1997-05-21 2006-03-22 昭和電工株式会社 Iii族窒化物半導体発光素子
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP4352473B2 (ja) * 1998-06-26 2009-10-28 ソニー株式会社 半導体装置の製造方法
US6459100B1 (en) * 1998-09-16 2002-10-01 Cree, Inc. Vertical geometry ingan LED
JP3469484B2 (ja) * 1998-12-24 2003-11-25 株式会社東芝 半導体発光素子およびその製造方法
US20010042866A1 (en) * 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal
US6713789B1 (en) * 1999-03-31 2004-03-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
US7071557B2 (en) * 1999-09-01 2006-07-04 Micron Technology, Inc. Metallization structures for semiconductor device interconnects, methods for making same, and semiconductor devices including same
CA2393081C (en) * 1999-12-03 2011-10-11 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP3882539B2 (ja) * 2000-07-18 2007-02-21 ソニー株式会社 半導体発光素子およびその製造方法、並びに画像表示装置
US6562648B1 (en) * 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
US6518198B1 (en) * 2000-08-31 2003-02-11 Micron Technology, Inc. Electroless deposition of doped noble metals and noble metal alloys
US20020103879A1 (en) * 2001-01-26 2002-08-01 Mondragon Oscar A. Method of advertising via the internet
US6864158B2 (en) * 2001-01-29 2005-03-08 Matsushita Electric Industrial Co., Ltd. Method of manufacturing nitride semiconductor substrate
JP4744700B2 (ja) * 2001-01-29 2011-08-10 株式会社日立製作所 薄膜半導体装置及び薄膜半導体装置を含む画像表示装置
JP4148664B2 (ja) * 2001-02-02 2008-09-10 三洋電機株式会社 窒化物系半導体レーザ素子およびその形成方法
JP2002232013A (ja) * 2001-02-02 2002-08-16 Rohm Co Ltd 半導体発光素子
US6765232B2 (en) * 2001-03-27 2004-07-20 Ricoh Company, Ltd. Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system
JP3705142B2 (ja) * 2001-03-27 2005-10-12 ソニー株式会社 窒化物半導体素子及びその作製方法
US6498113B1 (en) * 2001-06-04 2002-12-24 Cbl Technologies, Inc. Free standing substrates by laser-induced decoherency and regrowth
TW564584B (en) * 2001-06-25 2003-12-01 Toshiba Corp Semiconductor light emitting device
US6787435B2 (en) * 2001-07-05 2004-09-07 Gelcore Llc GaN LED with solderable backside metal
JP2003110146A (ja) * 2001-07-26 2003-04-11 Matsushita Electric Works Ltd 発光装置
JP4091279B2 (ja) * 2001-07-31 2008-05-28 株式会社東芝 半導体発光素子
US6656756B2 (en) * 2001-08-24 2003-12-02 Telecommunication Laboratories, Chunghwa Telecom Co., Ltd. Technique for a surface-emitting laser diode with a metal reflector
JP2003068654A (ja) * 2001-08-27 2003-03-07 Hoya Corp 化合物単結晶の製造方法
US6744072B2 (en) * 2001-10-02 2004-06-01 Xerox Corporation Substrates having increased thermal conductivity for semiconductor structures
US7148520B2 (en) * 2001-10-26 2006-12-12 Lg Electronics Inc. Diode having vertical structure and method of manufacturing the same
US6617261B2 (en) * 2001-12-18 2003-09-09 Xerox Corporation Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates
US6455340B1 (en) * 2001-12-21 2002-09-24 Xerox Corporation Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
JP4132869B2 (ja) * 2002-02-26 2008-08-13 株式会社神戸製鋼所 半導体デバイス電極/配線
US6943379B2 (en) * 2002-04-04 2005-09-13 Toyoda Gosei Co., Ltd. Light emitting diode
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US6818532B2 (en) * 2002-04-09 2004-11-16 Oriol, Inc. Method of etching substrates
US8294172B2 (en) * 2002-04-09 2012-10-23 Lg Electronics Inc. Method of fabricating vertical devices using a metal support film
JP4233268B2 (ja) * 2002-04-23 2009-03-04 シャープ株式会社 窒化物系半導体発光素子およびその製造方法
US20030222263A1 (en) * 2002-06-04 2003-12-04 Kopin Corporation High-efficiency light-emitting diodes
KR101030068B1 (ko) * 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
DE10234977A1 (de) * 2002-07-31 2004-02-12 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Dünnschicht-Halbleiterbauelement auf GaN-Basis
US6744196B1 (en) * 2002-12-11 2004-06-01 Oriol, Inc. Thin film LED
JP3966207B2 (ja) * 2003-03-28 2007-08-29 豊田合成株式会社 半導体結晶の製造方法及び半導体発光素子
TWI344706B (en) * 2003-06-04 2011-07-01 Myung Cheol Yoo Method of fabricating vertical structure compound semiconductor devices
DE10340271B4 (de) * 2003-08-29 2019-01-17 Osram Opto Semiconductors Gmbh Dünnschicht-Leuchtdiodenchip und Verfahren zu seiner Herstellung
US7122827B2 (en) * 2003-10-15 2006-10-17 General Electric Company Monolithic light emitting devices based on wide bandgap semiconductor nanostructures and methods for making same
US20050189551A1 (en) * 2004-02-26 2005-09-01 Hui Peng High power and high brightness white LED assemblies and method for mass production of the same
KR101254539B1 (ko) * 2004-04-28 2013-04-19 버티클 인코퍼레이티드 수직 구조 반도체 장치
TWI389334B (zh) * 2004-11-15 2013-03-11 Verticle Inc 製造及分離半導體裝置之方法
US7829909B2 (en) * 2005-11-15 2010-11-09 Verticle, Inc. Light emitting diodes and fabrication methods thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI395345B (zh) * 2006-04-12 2013-05-01 Semi Photonics Co Ltd 具有低熱阻之發光二極體燈
US9911896B2 (en) 2006-12-22 2018-03-06 Koninklijke Phillips N.V. Semiconductor light emitting device growing active layer on textured surface
US10312404B2 (en) 2006-12-22 2019-06-04 Lumileds Llc Semiconductor light emitting device growing active layer on textured surface

Also Published As

Publication number Publication date
KR20070038973A (ko) 2007-04-11
TWI433343B (zh) 2014-04-01
KR101335342B1 (ko) 2013-12-02
JP2008503900A (ja) 2008-02-07
WO2006002427A3 (en) 2007-03-01
WO2006002427A2 (en) 2006-01-05
CN101027777B (zh) 2010-05-05
US20060006554A1 (en) 2006-01-12
US20100117096A1 (en) 2010-05-13
EP1769539A4 (en) 2014-07-09
EP1769539A2 (en) 2007-04-04
CN101027777A (zh) 2007-08-29

Similar Documents

Publication Publication Date Title
TW200608606A (en) Vertical structure semiconductor devices with improved light output
WO2009072757A3 (en) Slim led package
TW200709474A (en) Light emitting diode employing an array of nonorods and method of fabricating the same
WO2008099327A3 (en) Embedded inductor and method of producing thereof
SG148133A1 (en) Cmos image sensor chip scale package with die receiving opening and method of the same
TWI256095B (en) Wafer level semiconductor package with build-up layer and process for fabricating the same
EP2475018B1 (en) Light-emitting device package and method of manufacturing the same
SG144128A1 (en) Semiconductor image device package with die receiving through-hole and method of the same
TWI466336B (zh) 發光二極體製造方法
EP2816613A3 (en) Light emitting device having vertical structure, package thereof and method for manufacturing the same
TW200739935A (en) Semiconductor light emitting device and method of fabricating the same
SG171644A1 (en) Semiconductor device with optical sensor and method of forming interconnect structure on front and backside of the device
TW200601586A (en) Flip-chip light emitting diode and fabricating method thereof
SG144135A1 (en) Multi-chips package and method of forming the same
TW200802629A (en) Heat sink package structure and method for fabricating the same
SG145644A1 (en) Semiconductor device package with multi-chips and method of the same
TW200639990A (en) CIS package and method thereof
SG146574A1 (en) Semiconductor device package having multi-chips with side-by-side configuration and the method of the same
EP2362455A3 (en) Light emitting device, method of manufacturing the same, light emitting device package, and illumination system
TW200703706A (en) Light emitting diode and manufacturing method thereof
TW200633246A (en) Semiconductor package having and optical device and the method of making the same
GB0713791D0 (en) Semiconductor chip package
TW200515557A (en) Semiconductor package, method for manufacturing the same and lead frame for use in the same
TW200627555A (en) Method for wafer level package
EP2383802A3 (en) Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting unit

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees