TW200608606A - Vertical structure semiconductor devices with improved light output - Google Patents
Vertical structure semiconductor devices with improved light outputInfo
- Publication number
- TW200608606A TW200608606A TW094120645A TW94120645A TW200608606A TW 200608606 A TW200608606 A TW 200608606A TW 094120645 A TW094120645 A TW 094120645A TW 94120645 A TW94120645 A TW 94120645A TW 200608606 A TW200608606 A TW 200608606A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor devices
- light output
- forming
- light emitting
- emitting layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58209804P | 2004-06-22 | 2004-06-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200608606A true TW200608606A (en) | 2006-03-01 |
TWI433343B TWI433343B (zh) | 2014-04-01 |
Family
ID=35782383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094120645A TWI433343B (zh) | 2004-06-22 | 2005-06-21 | 具有改良光輸出的垂直構造半導體裝置 |
Country Status (7)
Country | Link |
---|---|
US (2) | US20060006554A1 (zh) |
EP (1) | EP1769539A4 (zh) |
JP (1) | JP2008503900A (zh) |
KR (1) | KR101335342B1 (zh) |
CN (1) | CN101027777B (zh) |
TW (1) | TWI433343B (zh) |
WO (1) | WO2006002427A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI395345B (zh) * | 2006-04-12 | 2013-05-01 | Semi Photonics Co Ltd | 具有低熱阻之發光二極體燈 |
US9911896B2 (en) | 2006-12-22 | 2018-03-06 | Koninklijke Phillips N.V. | Semiconductor light emitting device growing active layer on textured surface |
Families Citing this family (43)
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US7067849B2 (en) | 2001-07-17 | 2006-06-27 | Lg Electronics Inc. | Diode having high brightness and method thereof |
US6949395B2 (en) | 2001-10-22 | 2005-09-27 | Oriol, Inc. | Method of making diode having reflective layer |
US7148520B2 (en) | 2001-10-26 | 2006-12-12 | Lg Electronics Inc. | Diode having vertical structure and method of manufacturing the same |
TWI344706B (en) * | 2003-06-04 | 2011-07-01 | Myung Cheol Yoo | Method of fabricating vertical structure compound semiconductor devices |
WO2005088743A1 (en) * | 2004-03-15 | 2005-09-22 | Tinggi Technologies Private Limited | Fabrication of semiconductor devices |
EP1756875A4 (en) | 2004-04-07 | 2010-12-29 | Tinggi Technologies Private Ltd | FABRICATION OF A RETROFLECTIVE LAYER ON SEMICONDUCTOR ELECTROLUMINESCENT DIODES |
KR101254539B1 (ko) * | 2004-04-28 | 2013-04-19 | 버티클 인코퍼레이티드 | 수직 구조 반도체 장치 |
TWI389334B (zh) * | 2004-11-15 | 2013-03-11 | Verticle Inc | 製造及分離半導體裝置之方法 |
US7378288B2 (en) * | 2005-01-11 | 2008-05-27 | Semileds Corporation | Systems and methods for producing light emitting diode array |
SG130975A1 (en) * | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
US8614449B1 (en) | 2005-10-11 | 2013-12-24 | SemiLEDs Optoelectronics Co., Ltd. | Protection for the epitaxial structure of metal devices |
SG131803A1 (en) | 2005-10-19 | 2007-05-28 | Tinggi Tech Private Ltd | Fabrication of transistors |
US7829909B2 (en) * | 2005-11-15 | 2010-11-09 | Verticle, Inc. | Light emitting diodes and fabrication methods thereof |
SG133432A1 (en) * | 2005-12-20 | 2007-07-30 | Tinggi Tech Private Ltd | Localized annealing during semiconductor device fabrication |
US8101961B2 (en) * | 2006-01-25 | 2012-01-24 | Cree, Inc. | Transparent ohmic contacts on light emitting diodes with growth substrates |
US7928462B2 (en) | 2006-02-16 | 2011-04-19 | Lg Electronics Inc. | Light emitting device having vertical structure, package thereof and method for manufacturing the same |
US7399653B2 (en) * | 2006-04-28 | 2008-07-15 | Applied Materials, Inc. | Nitride optoelectronic devices with backside deposition |
US7593204B1 (en) * | 2006-06-06 | 2009-09-22 | Rf Micro Devices, Inc. | On-chip ESD protection circuit for radio frequency (RF) integrated circuits |
SG140473A1 (en) * | 2006-08-16 | 2008-03-28 | Tinggi Tech Private Ltd | Improvements in external light efficiency of light emitting diodes |
SG140512A1 (en) * | 2006-09-04 | 2008-03-28 | Tinggi Tech Private Ltd | Electrical current distribution in light emitting devices |
US7892891B2 (en) * | 2006-10-11 | 2011-02-22 | SemiLEDs Optoelectronics Co., Ltd. | Die separation |
US8921204B2 (en) | 2006-10-11 | 2014-12-30 | SemiLEDs Optoelectronics Co., Ltd. | Method for fabricating semiconductor dice by separating a substrate from semiconductor structures using multiple laser pulses |
JP5183913B2 (ja) * | 2006-11-24 | 2013-04-17 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
US9484499B2 (en) * | 2007-04-20 | 2016-11-01 | Cree, Inc. | Transparent ohmic contacts on light emitting diodes with carrier substrates |
TWI462324B (zh) * | 2007-05-18 | 2014-11-21 | Delta Electronics Inc | 發光二極體裝置及其製造方法 |
US7683380B2 (en) * | 2007-06-25 | 2010-03-23 | Dicon Fiberoptics, Inc. | High light efficiency solid-state light emitting structure and methods to manufacturing the same |
DE102008038852B4 (de) * | 2008-06-03 | 2024-02-01 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Bauelementes und optoelektronisches Bauelement |
US7881030B1 (en) | 2008-07-07 | 2011-02-01 | Rf Micro Devices, Inc. | Enhancement-mode field effect transistor based electrostatic discharge protection circuit |
US7881029B1 (en) | 2008-07-07 | 2011-02-01 | Rf Micro Devices, Inc. | Depletion-mode field effect transistor based electrostatic discharge protection circuit |
US8580612B2 (en) * | 2009-02-12 | 2013-11-12 | Infineon Technologies Ag | Chip assembly |
US8900893B2 (en) * | 2010-02-11 | 2014-12-02 | Tsmc Solid State Lighting Ltd. | Vertical LED chip package on TSV carrier |
CN102130285B (zh) * | 2010-11-03 | 2012-12-26 | 映瑞光电科技(上海)有限公司 | 发光二极管及其制造方法 |
CN102024898B (zh) * | 2010-11-03 | 2013-03-27 | 西安神光安瑞光电科技有限公司 | 发光二极管及其制造方法 |
US9324905B2 (en) | 2011-03-15 | 2016-04-26 | Micron Technology, Inc. | Solid state optoelectronic device with preformed metal support substrate |
KR20130059026A (ko) * | 2011-11-28 | 2013-06-05 | 서울옵토디바이스주식회사 | 에피층을 성장 기판으로부터 분리하는 방법 |
US8598611B2 (en) | 2012-01-09 | 2013-12-03 | Micron Technology, Inc. | Vertical solid-state transducers and solid-state transducer arrays having backside terminals and associated systems and methods |
KR101394565B1 (ko) * | 2012-08-21 | 2014-05-14 | 한국산업기술대학교산학협력단 | 광 추출 향상 기술이 반영된 질화물 반도체 에피 구조의 기판 및 템플레이트 제조 방법 |
US9082748B2 (en) | 2012-10-05 | 2015-07-14 | Micron Technology, Inc. | Devices, systems, and methods related to removing parasitic conduction in semiconductor devices |
JP6307764B2 (ja) * | 2013-09-30 | 2018-04-11 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
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TWI389334B (zh) * | 2004-11-15 | 2013-03-11 | Verticle Inc | 製造及分離半導體裝置之方法 |
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-
2005
- 2005-06-21 TW TW094120645A patent/TWI433343B/zh not_active IP Right Cessation
- 2005-06-22 KR KR1020067027184A patent/KR101335342B1/ko not_active IP Right Cessation
- 2005-06-22 WO PCT/US2005/022785 patent/WO2006002427A2/en active Search and Examination
- 2005-06-22 EP EP05764366.0A patent/EP1769539A4/en not_active Withdrawn
- 2005-06-22 CN CN2005800206427A patent/CN101027777B/zh not_active Expired - Fee Related
- 2005-06-22 JP JP2007518354A patent/JP2008503900A/ja active Pending
- 2005-06-22 US US11/165,110 patent/US20060006554A1/en not_active Abandoned
-
2010
- 2010-01-19 US US12/689,934 patent/US20100117096A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI395345B (zh) * | 2006-04-12 | 2013-05-01 | Semi Photonics Co Ltd | 具有低熱阻之發光二極體燈 |
US9911896B2 (en) | 2006-12-22 | 2018-03-06 | Koninklijke Phillips N.V. | Semiconductor light emitting device growing active layer on textured surface |
US10312404B2 (en) | 2006-12-22 | 2019-06-04 | Lumileds Llc | Semiconductor light emitting device growing active layer on textured surface |
Also Published As
Publication number | Publication date |
---|---|
KR20070038973A (ko) | 2007-04-11 |
TWI433343B (zh) | 2014-04-01 |
KR101335342B1 (ko) | 2013-12-02 |
JP2008503900A (ja) | 2008-02-07 |
WO2006002427A3 (en) | 2007-03-01 |
WO2006002427A2 (en) | 2006-01-05 |
CN101027777B (zh) | 2010-05-05 |
US20060006554A1 (en) | 2006-01-12 |
US20100117096A1 (en) | 2010-05-13 |
EP1769539A4 (en) | 2014-07-09 |
EP1769539A2 (en) | 2007-04-04 |
CN101027777A (zh) | 2007-08-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |