TW200601407A - Method for manufacturing semiconductor substrate and semiconductor substrate - Google Patents

Method for manufacturing semiconductor substrate and semiconductor substrate

Info

Publication number
TW200601407A
TW200601407A TW094120342A TW94120342A TW200601407A TW 200601407 A TW200601407 A TW 200601407A TW 094120342 A TW094120342 A TW 094120342A TW 94120342 A TW94120342 A TW 94120342A TW 200601407 A TW200601407 A TW 200601407A
Authority
TW
Taiwan
Prior art keywords
semiconductor substrate
oxide film
gate oxide
diffusion layer
layer
Prior art date
Application number
TW094120342A
Other languages
English (en)
Other versions
TWI297170B (en
Inventor
Yasumori Fukushima
Yutaka Takafuji
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Publication of TW200601407A publication Critical patent/TW200601407A/zh
Application granted granted Critical
Publication of TWI297170B publication Critical patent/TWI297170B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01015—Phosphorus [P]
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    • H01L2924/01018—Argon [Ar]
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    • H01L2924/01019—Potassium [K]
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    • H01L2924/01057—Lanthanum [La]
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    • H01L2924/01073—Tantalum [Ta]
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    • H01L2924/01074—Tungsten [W]
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    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0495—5th Group
    • H01L2924/04953—TaN
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance
TW094120342A 2004-06-18 2005-06-17 Method for manufacturing semiconductor substrate and semiconductor substrate TWI297170B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004181527A JP4814498B2 (ja) 2004-06-18 2004-06-18 半導体基板の製造方法

Publications (2)

Publication Number Publication Date
TW200601407A true TW200601407A (en) 2006-01-01
TWI297170B TWI297170B (en) 2008-05-21

Family

ID=35480948

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120342A TWI297170B (en) 2004-06-18 2005-06-17 Method for manufacturing semiconductor substrate and semiconductor substrate

Country Status (4)

Country Link
US (1) US7563693B2 (zh)
JP (1) JP4814498B2 (zh)
KR (1) KR100725551B1 (zh)
TW (1) TWI297170B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI668801B (zh) * 2007-06-11 2019-08-11 日商瑞薩電子股份有限公司 半導體裝置之製造方法

Families Citing this family (200)

* Cited by examiner, † Cited by third party
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US7897443B2 (en) * 2005-04-26 2011-03-01 Sharp Kabushiki Kaisha Production method of semiconductor device and semiconductor device
EP1881527A1 (en) * 2006-07-17 2008-01-23 STMicroelectronics S.r.l. Process for manufacturing a semiconductor wafer having SOI-insulated wells and semiconductor wafer thereby manufactured
KR101362688B1 (ko) * 2007-04-13 2014-02-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그 제조 방법
US8207046B2 (en) 2007-12-27 2012-06-26 Sharp Kabushiki Kaisha Method for producing semiconductor device and semiconductor device produced by same method
CN101911247B (zh) * 2007-12-27 2013-03-27 夏普株式会社 半导体装置及其制造方法
WO2009084284A1 (ja) 2007-12-27 2009-07-09 Sharp Kabushiki Kaisha 半導体装置用の絶縁基板、半導体装置、及び、半導体装置の製造方法
US8354329B2 (en) * 2008-02-13 2013-01-15 Sharp Kabushiki Kaisha Semiconductor device manufacturing method, semiconductor device and display apparatus
JP2010114179A (ja) * 2008-11-05 2010-05-20 Hitachi Displays Ltd 表示装置および表示装置の製造方法
US8378715B2 (en) 2009-04-14 2013-02-19 Monolithic 3D Inc. Method to construct systems
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