TW200540662A - Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method - Google Patents

Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method Download PDF

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Publication number
TW200540662A
TW200540662A TW094105467A TW94105467A TW200540662A TW 200540662 A TW200540662 A TW 200540662A TW 094105467 A TW094105467 A TW 094105467A TW 94105467 A TW94105467 A TW 94105467A TW 200540662 A TW200540662 A TW 200540662A
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TW
Taiwan
Prior art keywords
information
mask data
exposure device
mask
pattern
Prior art date
Application number
TW094105467A
Other languages
English (en)
Chinese (zh)
Other versions
TWI317080B (enExample
Inventor
Kazuya Fukuhara
Daisuke Kawamura
Shoji Mimotogi
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of TW200540662A publication Critical patent/TW200540662A/zh
Application granted granted Critical
Publication of TWI317080B publication Critical patent/TWI317080B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW094105467A 2004-02-23 2005-02-23 Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method TW200540662A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004046750A JP4351928B2 (ja) 2004-02-23 2004-02-23 マスクデータの補正方法、フォトマスクの製造方法及びマスクデータの補正プログラム

Publications (2)

Publication Number Publication Date
TW200540662A true TW200540662A (en) 2005-12-16
TWI317080B TWI317080B (enExample) 2009-11-11

Family

ID=34858147

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094105467A TW200540662A (en) 2004-02-23 2005-02-23 Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method

Country Status (4)

Country Link
US (1) US7685556B2 (enExample)
JP (1) JP4351928B2 (enExample)
CN (2) CN100347816C (enExample)
TW (1) TW200540662A (enExample)

Cited By (3)

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TWI447828B (zh) * 2011-06-22 2014-08-01 Inotera Memories Inc 製程原始資料的壓縮方法及壓縮系統
TWI482039B (zh) * 2008-10-02 2015-04-21 Synopsys Inc 用以決定光學臨限值及抗蝕劑偏差的方法，設備及電腦可讀取儲存媒體
TWI768243B (zh) * 2018-10-23 2022-06-21 以色列商卡爾蔡司Ｓｍｓ股份有限公司 確定用於微影光罩基材之複數個像素的位置之方法和裝置

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JP4336671B2 (ja) * 2005-07-15 2009-09-30 キヤノン株式会社 露光パラメータの決定をコンピュータに実行させるプログラム、露光パラメータを決定する決定方法、露光方法及びデバイス製造方法。
JP2007079517A (ja) * 2005-09-16 2007-03-29 Toshiba Corp パターン作成方法、パターン作成プログラム及び半導体装置の製造方法
ATE467149T1 (de) * 2005-10-03 2010-05-15 Imec Alternierende phasenmaske
DE102005053651A1 (de) * 2005-11-10 2007-05-16 Zeiss Carl Smt Ag Mikrolithographische Projektionsbelichtungsanlage sowie Verfahren zur Herstellung mikrostrukturierter Bauelemente
JP2007142275A (ja) 2005-11-21 2007-06-07 Toshiba Corp フォトマスクの判定方法、半導体装置の製造方法及びプログラム
US20070148558A1 (en) * 2005-12-27 2007-06-28 Shahzad Akbar Double metal collimated photo masks, diffraction gratings, optics system, and method related thereto
JP2007317960A (ja) * 2006-05-26 2007-12-06 Canon Inc 露光条件の検出方法及び装置、並びに、露光装置
JP5107532B2 (ja) * 2006-05-31 2012-12-26 ルネサスエレクトロニクス株式会社 シミュレーション方法およびシミュレーションシステム、ならびにマスクパターンの修正方法
JP4786499B2 (ja) * 2006-10-26 2011-10-05 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
JP4796476B2 (ja) * 2006-11-07 2011-10-19 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
JP2008153447A (ja) * 2006-12-18 2008-07-03 Nec Electronics Corp シミュレーション方法およびシミュレーションシステム、ならびにマスクパターンの修正方法
KR100945920B1 (ko) * 2007-04-12 2010-03-05 주식회사 하이닉스반도체 시뮬레이션 예측을 이용한 보조 패턴 생성 방법
JP5064116B2 (ja) 2007-05-30 2012-10-31 Ｈｏｙａ株式会社 フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法
JP5077656B2 (ja) * 2007-06-18 2012-11-21 株式会社ニコン パターンデータ処理方法及びシステム、並びに露光方法及び装置
US7910863B2 (en) * 2007-09-20 2011-03-22 Tokyo Electron Limited Temperature setting method of thermal processing plate, computer-readable recording medium recording program thereon, and temperature setting apparatus for thermal processing plate
JP4568341B2 (ja) * 2008-03-19 2010-10-27 株式会社東芝 シミュレーションモデル作成方法、マスクデータ作成方法、及び半導体装置の製造方法
KR101096979B1 (ko) * 2010-05-07 2011-12-20 주식회사 하이닉스반도체 반도체 소자의 패턴 균일도 조절 방법
TWI417756B (zh) * 2010-12-22 2013-12-01 Etron Technology Inc 用以記錄記憶體電路光罩改版的電路
JP5575024B2 (ja) * 2011-03-22 2014-08-20 株式会社東芝 マスクパターン補正方法、マスクパターン補正プログラムおよび半導体装置の製造方法
NL2010163A (en) 2012-02-07 2013-08-08 Asml Netherlands Bv Substrate-topography-aware lithography modeling.
WO2013129611A1 (ja) * 2012-02-29 2013-09-06 昭和電工株式会社 エレクトロルミネッセント素子の製造方法
US8631360B2 (en) * 2012-04-17 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Methodology of optical proximity correction optimization
NL2011276A (en) * 2012-09-06 2014-03-10 Asml Netherlands Bv Inspection method and apparatus and lithographic processing cell.
JP6095334B2 (ja) * 2012-11-26 2017-03-15 キヤノン株式会社 マスクパターンおよび露光条件を決定する方法、ならびにプログラム
CN105068374B (zh) * 2015-08-11 2019-07-23 上海华虹宏力半导体制造有限公司 光学临近修正中的二维图形快速识别方法
JP6706391B2 (ja) * 2016-12-30 2020-06-03 グーグル エルエルシー 回路要素中の成膜不均一性の補償
JP6819963B2 (ja) * 2017-06-13 2021-01-27 日本コントロールシステム株式会社 シミュレーション装置、シミュレーション方法、およびプログラム
CN107179625B (zh) * 2017-06-29 2020-06-23 惠科股份有限公司 一种显示面板的间隔单元、光罩及显示面板的制造方法
KR102415583B1 (ko) * 2017-06-30 2022-07-04 삼성전자주식회사 Opc 모델의 최적화 방법 및 이를 이용한 반도체 소자의 제조 방법
CN112561873B (zh) * 2020-12-11 2022-11-25 上海集成电路装备材料产业创新中心有限公司 一种基于机器学习的cdsem图像虚拟测量方法
CN112541545B (zh) * 2020-12-11 2022-09-02 上海集成电路装备材料产业创新中心有限公司 基于机器学习预测刻蚀工艺后cdsem图像的方法
US20230005738A1 (en) * 2021-06-30 2023-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor devices and pattern formation method for manufacturing semiconductor devices
CN115494695B (zh) * 2022-08-30 2024-08-06 广州新锐光掩模科技有限公司 一种修正光掩模图形位置偏差的设备及方法
CN119065193B (zh) * 2024-11-05 2025-03-14 全芯智造技术有限公司 用于光学邻近校正的方法、电子设备及计算机可读存储介质

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TWI482039B (zh) * 2008-10-02 2015-04-21 Synopsys Inc 用以決定光學臨限值及抗蝕劑偏差的方法，設備及電腦可讀取儲存媒體
TWI447828B (zh) * 2011-06-22 2014-08-01 Inotera Memories Inc 製程原始資料的壓縮方法及壓縮系統
TWI768243B (zh) * 2018-10-23 2022-06-21 以色列商卡爾蔡司Ｓｍｓ股份有限公司 確定用於微影光罩基材之複數個像素的位置之方法和裝置
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Also Published As

Publication number Publication date
CN101042526A (zh) 2007-09-26
US20050188341A1 (en) 2005-08-25
CN101042526B (zh) 2010-06-09
CN100347816C (zh) 2007-11-07
JP2005234485A (ja) 2005-09-02
US7685556B2 (en) 2010-03-23
CN1661773A (zh) 2005-08-31
TWI317080B (enExample) 2009-11-11
JP4351928B2 (ja) 2009-10-28

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