JP4351928B2 - マスクデータの補正方法、フォトマスクの製造方法及びマスクデータの補正プログラム - Google Patents

マスクデータの補正方法、フォトマスクの製造方法及びマスクデータの補正プログラム Download PDF

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Publication number
JP4351928B2
JP4351928B2 JP2004046750A JP2004046750A JP4351928B2 JP 4351928 B2 JP4351928 B2 JP 4351928B2 JP 2004046750 A JP2004046750 A JP 2004046750A JP 2004046750 A JP2004046750 A JP 2004046750A JP 4351928 B2 JP4351928 B2 JP 4351928B2
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JP
Japan
Prior art keywords
exposure apparatus
mask data
illumination
pattern
simulation
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Expired - Fee Related
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JP2004046750A
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English (en)
Japanese (ja)
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JP2005234485A (ja
Inventor
和也 福原
大輔 河村
省次 三本木
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Toshiba Corp
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Toshiba Corp
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Priority to JP2004046750A priority Critical patent/JP4351928B2/ja
Priority to CNB2005100088348A priority patent/CN100347816C/zh
Priority to US11/062,437 priority patent/US7685556B2/en
Priority to CN2007100963714A priority patent/CN101042526B/zh
Priority to TW094105467A priority patent/TW200540662A/zh
Publication of JP2005234485A publication Critical patent/JP2005234485A/ja
Application granted granted Critical
Publication of JP4351928B2 publication Critical patent/JP4351928B2/ja
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Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2004046750A 2004-02-23 2004-02-23 マスクデータの補正方法、フォトマスクの製造方法及びマスクデータの補正プログラム Expired - Fee Related JP4351928B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004046750A JP4351928B2 (ja) 2004-02-23 2004-02-23 マスクデータの補正方法、フォトマスクの製造方法及びマスクデータの補正プログラム
CNB2005100088348A CN100347816C (zh) 2004-02-23 2005-02-23 掩膜数据的修正方法和光掩膜
US11/062,437 US7685556B2 (en) 2004-02-23 2005-02-23 Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method
CN2007100963714A CN101042526B (zh) 2004-02-23 2005-02-23 掩膜数据的修正方法、光掩膜和光学像的预测方法
TW094105467A TW200540662A (en) 2004-02-23 2005-02-23 Mask data correction method, photomask manufacturing method, computer program, optical image prediction method, resist pattern shape prediction method, and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004046750A JP4351928B2 (ja) 2004-02-23 2004-02-23 マスクデータの補正方法、フォトマスクの製造方法及びマスクデータの補正プログラム

Publications (2)

Publication Number Publication Date
JP2005234485A JP2005234485A (ja) 2005-09-02
JP4351928B2 true JP4351928B2 (ja) 2009-10-28

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US (1) US7685556B2 (enExample)
JP (1) JP4351928B2 (enExample)
CN (2) CN100347816C (enExample)
TW (1) TW200540662A (enExample)

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JP4796476B2 (ja) * 2006-11-07 2011-10-19 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
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US8184897B2 (en) * 2008-10-02 2012-05-22 Synopsys, Inc. Method and apparatus for determining an optical threshold and a resist bias
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JP5575024B2 (ja) * 2011-03-22 2014-08-20 株式会社東芝 マスクパターン補正方法、マスクパターン補正プログラムおよび半導体装置の製造方法
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CN105068374B (zh) * 2015-08-11 2019-07-23 上海华虹宏力半导体制造有限公司 光学临近修正中的二维图形快速识别方法
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JP6819963B2 (ja) * 2017-06-13 2021-01-27 日本コントロールシステム株式会社 シミュレーション装置、シミュレーション方法、およびプログラム
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Also Published As

Publication number Publication date
CN101042526A (zh) 2007-09-26
US20050188341A1 (en) 2005-08-25
CN101042526B (zh) 2010-06-09
TW200540662A (en) 2005-12-16
CN100347816C (zh) 2007-11-07
JP2005234485A (ja) 2005-09-02
US7685556B2 (en) 2010-03-23
CN1661773A (zh) 2005-08-31
TWI317080B (enExample) 2009-11-11

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