TW200539279A - Backgated FinFET having different oxide thicknesses - Google Patents

Backgated FinFET having different oxide thicknesses Download PDF

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Publication number
TW200539279A
TW200539279A TW094110756A TW94110756A TW200539279A TW 200539279 A TW200539279 A TW 200539279A TW 094110756 A TW094110756 A TW 094110756A TW 94110756 A TW94110756 A TW 94110756A TW 200539279 A TW200539279 A TW 200539279A
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TW
Taiwan
Prior art keywords
fin
gate
item
scope
patent application
Prior art date
Application number
TW094110756A
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English (en)
Chinese (zh)
Inventor
Andres Bryant
Omer H Dokumaci
Hussein I Hanafi
Edward J Nowak
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Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of TW200539279A publication Critical patent/TW200539279A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6217—Fin field-effect transistors [FinFET] having non-uniform gate electrodes, e.g. gate conductors having varying doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW094110756A 2004-04-28 2005-04-04 Backgated FinFET having different oxide thicknesses TW200539279A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/709,323 US7056773B2 (en) 2004-04-28 2004-04-28 Backgated FinFET having different oxide thicknesses

Publications (1)

Publication Number Publication Date
TW200539279A true TW200539279A (en) 2005-12-01

Family

ID=35187635

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094110756A TW200539279A (en) 2004-04-28 2005-04-04 Backgated FinFET having different oxide thicknesses

Country Status (4)

Country Link
US (3) US7056773B2 (https=)
JP (1) JP5039979B2 (https=)
CN (1) CN100375252C (https=)
TW (1) TW200539279A (https=)

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Also Published As

Publication number Publication date
US7476946B2 (en) 2009-01-13
US20050245009A1 (en) 2005-11-03
CN1691294A (zh) 2005-11-02
JP5039979B2 (ja) 2012-10-03
US20060237774A1 (en) 2006-10-26
JP2005317978A (ja) 2005-11-10
CN100375252C (zh) 2008-03-12
US20060145195A1 (en) 2006-07-06
US7056773B2 (en) 2006-06-06
US7187042B2 (en) 2007-03-06

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