CN100375252C - 鳍片场效应晶体管半导体结构及其制造方法 - Google Patents

鳍片场效应晶体管半导体结构及其制造方法 Download PDF

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Publication number
CN100375252C
CN100375252C CNB2005100554569A CN200510055456A CN100375252C CN 100375252 C CN100375252 C CN 100375252C CN B2005100554569 A CNB2005100554569 A CN B2005100554569A CN 200510055456 A CN200510055456 A CN 200510055456A CN 100375252 C CN100375252 C CN 100375252C
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impurity
grid
fin
finfet
gate
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CNB2005100554569A
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Chinese (zh)
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CN1691294A (zh
Inventor
A·布赖恩特
O·H·多库马奇
H·I·哈纳菲
E·J·诺瓦克
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6217—Fin field-effect transistors [FinFET] having non-uniform gate electrodes, e.g. gate conductors having varying doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNB2005100554569A 2004-04-28 2005-03-17 鳍片场效应晶体管半导体结构及其制造方法 Expired - Lifetime CN100375252C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/709,323 2004-04-28
US10/709,323 US7056773B2 (en) 2004-04-28 2004-04-28 Backgated FinFET having different oxide thicknesses

Publications (2)

Publication Number Publication Date
CN1691294A CN1691294A (zh) 2005-11-02
CN100375252C true CN100375252C (zh) 2008-03-12

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US (3) US7056773B2 (https=)
JP (1) JP5039979B2 (https=)
CN (1) CN100375252C (https=)
TW (1) TW200539279A (https=)

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CN102460660B (zh) * 2009-06-26 2014-08-06 株式会社东芝 半导体装置的制造方法

Also Published As

Publication number Publication date
US7476946B2 (en) 2009-01-13
US20050245009A1 (en) 2005-11-03
CN1691294A (zh) 2005-11-02
JP5039979B2 (ja) 2012-10-03
US20060237774A1 (en) 2006-10-26
JP2005317978A (ja) 2005-11-10
TW200539279A (en) 2005-12-01
US20060145195A1 (en) 2006-07-06
US7056773B2 (en) 2006-06-06
US7187042B2 (en) 2007-03-06

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