TW200536131A - Semiconductor chip package - Google Patents
Semiconductor chip package Download PDFInfo
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- TW200536131A TW200536131A TW093141415A TW93141415A TW200536131A TW 200536131 A TW200536131 A TW 200536131A TW 093141415 A TW093141415 A TW 093141415A TW 93141415 A TW93141415 A TW 93141415A TW 200536131 A TW200536131 A TW 200536131A
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- conductive material
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- H01L2924/351—Thermal stress
Description
200536131 九、發明說明: 【發明所屬之技術領域】 體電路晶片。 本發明一般係關於半導體晶片之封裝。一方面,其更特 定言之係關於-種以-倒裝晶片組態電連接至一基板之積 【先前技術】 積體電路裝置-般包括裝配於一封裝内之一半導體晶粒 或晶片。一封裝一般具有與該晶片電連接之一基板部^。 一般地’該基板大於該晶片且其端子、引線或電性接點大 於該晶片的端子、引線或電性接點,從而允許容易地將一 封裝的晶片電連接至-電路板上(例如,在裝配用於一系統 之-電路板時)。-此類封裝組態係_倒裝晶片封裝。 圖1顯示-傳統倒裝晶片封裝2 〇之一範例。在此範例中, 該=片22係藉由—焊料凸塊陣㈣而電連接至該基板24。 此範例中的基板24具有(例如)可用於將該封裝晶片2〇附著 於-電路板(未顯示)之—烊球陣列28 (例如,球桃格陣列或 BGA)。一般地,在經由該等焊料凸塊%而將該晶片22電連 接至該基板24後,將—側填滿材料3〇饋送入該晶片22與該 土板24之間的閒置空間或間隙内。圖}中,切割掉該側填滿 材料30之;s·干部分以說明其中的—部分焊料凸塊%。在將 X曰日片22毛連接至该基板24且放置並固化該側填滿材料π 後的某一時刻,-般將-蓋32放置於該晶片22上。基於說 明之目的’圖1中以虛線顯示該蓋32。除保護該封裝20内的 晶片22外,例如,此蓋32可由鋁製成並充當一散熱片以使 98563.doc 200536131 該晶片2 2更佳地冷卻。 該側填滿材料30的目的之一係使應力更均勻地分布於該 晶片22與該基板24之間以減小在焊料接合處之上/之下的 知料凸塊2 6 4料凸塊接合處及/或電路層所經受的應力。 此類應力至少部分係由該晶片22、該等焊料凸塊26與該基 板24之間不同的熱膨脹係數(即熱膨脹係數失配)所引起。例 如,該晶片22—般係由一矽晶圓製成,該基板以一般係由 有機材料製成,該有機材料具有銅線與延伸於其中的通 道,而該等焊料凸塊26一般係由具有低熔點之一金屬化合 物製成。因此,由於該晶片22與該基板24之間不同的材料 膨脹/收縮比率而使得溫度變化(例如,在該晶片22之使用期 間)造成將該晶片22連接至該基板24的焊料凸塊%上之應 力。該側填滿材料30亦可充當幫助將該晶片22固定於該基 板24之一黏合劑,從而使得該晶片22不僅係藉由該等焊料 凸塊26而固持於適當位置。此舉進一步減小施加於該等焊 料凸塊26上的應力。 使用焊料凸塊來製造並裝配一倒裝晶片封裝(例如,如上 所述)可能比將一晶片黏著於一基板之其他方法(例如,導線 焊接)更昂貴。同樣使用導線焊接之連接常比使用焊料凸塊 之連接更強。此外,許多製造設施已經具有導線焊接機。 但是,導線焊接一般並不適用於倒裝晶片組態,而有些製 造商則偏好倒裝晶片組態。因此,需要提供一種使用一導 線焊接機及使用一倒裝晶片組態來將一晶片附著於一基板 之方法。 98563.doc 200536131 【發明内容】 可藉由本發明之具體實施例來解決上面所概述之問題及 需要。依據本發明之一方面,提供一種半導體晶片封裝, 其包括一積體電路晶片、一晶片接觸墊、一螺柱及一基板。 該晶片接觸塾係形成於該晶片之一第一側上。該螺柱係形 成於該晶片接觸墊上。該螺柱係藉使用一導線焊接機而由 導線形成。該螺柱具有焊接至該晶片接觸墊之一部分受擠 壓的球形部分。該螺柱還具有從該部分受播壓的球形部分 延伸之一伸長部分。該基板包括一絕緣材料之第一層、一 井、一第一導電材料及一第二層。該絕緣材料之第一層在 邊基板之-第-側上。該井係形成於該層内且朝該基 板之第-側開口。該井具有一底部。該第一導電材料至少 部分側填滿該井。該第二層具有形成於其中之導電跡線。 該第:導電材料係電連接至料跡線中的至少—跡線。該 螺柱係部分嵌入於該第一導電材料内以在該晶片與該基板 之間形成-電連接。該晶片之第—側面對該基板之第一側。 #據本發月之s方面,提供—種形成—半導體晶片封 裝之方法。此方法包括本段落中所說明的以下步驟,並可 以改變步驟順序。提供_積體電路晶片。該晶片包括形成 s /曰曰片#帛#|上之_晶片接觸塾。提供在—導線焊 接機内之導線。料線之_尖端具有_球形部分。藉由 該導線焊接機將該導線之球形部分導線焊接至該晶片接觸 墊上。該球形部分在該導線焊接期間變成部分受擠壓。分 離該導線,使得該導線之_伸長部純持從該部分受擠壓 98563.doc 200536131 的球形部分延伸以形成一螺柱。提供-基板,其包括-絕 緣材料之第-層、一井、一第_導電材料及一第二層。該 :邑緣=料之弟_層在該基板之—第—側上。該井係形成於 二第-層内且朝該基板之第一側開口。該井具有一底部。 /電材料至4部分側填滿該井。該第二層具有形成 中之^ I跡線。该第__導電材料係電連接至該等跡線 至少一跡線。將該螺柱的伸長部分之至少部分浸入該 弟導电材料中以在該晶片與該基板之間形成一電連接。 該晶片之第一側面對該基板之第一側。 依據本發明之另一方面,提供一種半導體晶片封裝,苴 包括一積體電路晶片、一晶片接觸墊、一螺柱、一基板及 一支撐部件。該晶片接觸塾係形成於該晶片之-第一側 上。該螺柱係形成於該晶片接觸墊上。該螺柱係藉使用一 導線焊接機而由導線形成。該螺柱具有谭接至該晶片接觸 墊之一部分受擠壓的球形部分。該螺柱具有從該部分受擦 壓的球形4分延伸之一伸長部分。該基板包括一絕緣材料 之第-層、一井、一導電襯墊、一第一導電材料及一第二 層料之第-層在該基板之一第—側上。該井係 形成於該第一層内且朝該基板之第一側開口。該井具有— 底部。該導電襯墊至少部分地將該井加襯。該帛_導電材 料至少部分側填滿該井。該第二層具有形成於其中之:電 跡線。該第-導電材料係經由該導電襯墊而電連接至該i 跡線中的至少-跡線。該支撐部件從該基板之第一層延伸 於該晶片與該基板之間。該螺柱係部分後入於該第—導電 98563.doc 200536131 烕一電連接。該晶片之 片至少係部分受該支撐 材料内以在該晶片與該基板之間形成 第一側面對該基板之第一側。該晶片 部件支撐。 發明申請專利範圍主顳的太狢日Η ^ aL ^ -一
特定具體實施例用作修改或設計用以實施本發明之相同目 前述内容已相當廣泛地概述本發明之特徵,以便可以更 完善地瞭解下面關於本發明之詳細說明。下文將對形成本 的之其他結構的依據。熟習此項技術者還應認識到,此類 等同構造並不背離所时請專利冑圍中冑出的本發明之精 神及範脅。 【實施方式】 現在參考圖式,其令在全部各圖式中皆使用相同的參考 數字來表示相同的元件,該等圖式顯示並說明本發明之說 明性具體實施例。該等圖式並不一定係按比例繪製,且在 某些情況下,僅基於說明之目的而在某些地方對該等圖式 作放大及/或簡化。熟習此項技術者將依據本發明之以下說 明性具體實施例而明白本發明之許多可能的應用及變化。 圖2及3說明依據本發明之一第一項具體實施例之一半導 體晶片封裝20。圖2係該封裝20之一側視圖。在圖i中,基 於對圖2中的螺柱40作說明之目的而已切割掉該側填滿材 料30之若干部分。同樣,基於說明之目的,圖2中以虛線顯 示該蓋32。圖2中,一積體電路晶片22係以一倒裝晶片組態 而電連接至'一基板24。 98563.doc -10- 200536131 圖3係顯示該封裝2〇之一斷面的圖2中之一放大部分。首 先將說明該封裝20之晶片部分。在該晶片22之一第一側44 上形成晶片接觸墊42。該晶片22之第一側44面對該基板 24。該等晶片接觸墊42中的至少部分接觸墊具有與其焊接 之螺柱40。該等螺柱4〇係藉使用一導線焊接機(未顯示)而由 導、、、%升y成在知接之鈾,該等螺柱40開始係作為從一導線 焊接機(未顯示)饋送的具有一球形尖端(未顯示)之一導 次例如在一般的導線焊接程序中。藉由該導線烊接機將 該導線之球形部分尖端焊接至其個別晶片接觸墊42上。該 球形尖端變成至少部分受該導線焊接機(例如,藉由毛細管: =遷。在將該導線之尖端焊接至該晶片接觸塾42後,將 :亥導線拖曳出一預定長度以提供該螺柱4〇之伸長部分私。 一、後例如’如圖3所不,該導線焊接機分離該導線以形成 -螺柱仂。因此,該螺柱40具有一部分受擠壓的球形部分 二伸長部分46。該伸長部分46從該部分受播壓的球形 邛勿47延伸。重複此程序 玍隹这日日片22之弟一側44上形 成所有該等螺柱4〇。由該導線焊接機決定,可同時( 形成該等螺柱40中的部分或全部螺柱。 该#晶片接觸墊42可能 ^ 糸由各種適®的材料製成,例如 包括(但不限於)··金、鋁、鎳、 望 ”鈀鎢、銅或其組合物。該 寺螺柱40可能係由各種適者 .週田材科中的任何材料製成,例如 包括(但不限於):金、銀、 铷# $ △ 紹#σ、錫、焊料及其組合 匆。该V線焊接機在焊接期 波能量,此❹少或可能不使用超音 刀取決於用於該等晶片接觸墊42及該 98563.doc 200536131 等螺柱40之材料。較佳的係將金用於該等螺柱40以及將金 用作該等晶片接觸墊42之最外面的曝露材料(由此而形成 一金與金疊加的焊接)。將金用於該等螺柱4〇以及用於該等 晶片接觸墊42之-優點係,其可能允許以_較低的毛細管 力來進行焊接;從而降低焊接期間施加於該晶片22上的應 力。例如在將弱的低k介電材料實施進該晶片結構之情況 下,減小该晶片上的應力正成為人們越來越關心的問題。 同樣,金與金疊加的焊接可能減小或消除對為在該螺柱4〇 與該晶片接觸墊42之間形成一焊接而使用超音波能量及/ 或咼熱量之需要,此點可能亦係一優點。在藉由使用一金 與金疊加的焊接來降低施加於該晶片22上的力之情況下, 例如,亦可使得該晶片接觸墊42移動至該晶片22之中心部 分’從而允許將晶片接觸墊42放置於該第一晶片側44上的 任何或幾乎任何位置。此舉可能允許每一晶片區域有更多 的晶片接觸墊42及/或在晶片接觸墊42之間有更大的間隔。 仍參考圖3,下面說明該封裝2〇之基板部分。如圖3所示, 在該基板24之一第一側50上提供一絕緣材料之第一層48。 此第一層48可能係一單一層、一組合物層及/或多層。圖3 中,基於說明之目的,將該第一層48顯示為一單一層。該 基板24之第一側50面對該晶片22。井54係形成於該第一基 板層48内且朝該第一基板側5〇開口。該等井54具有底部 56。在一項較佳的具體實施例中,一導電襯墊58係至少部 分地將該等井中的至少部分井54加襯。例如,圖3中,顯示 一導電襯墊58係將每一井54的壁及底部56加襯。一第一導 98563.doc -12· 200536131 電材料至少部分填滿每一井54。 該第-基板層48可能係由各種適當材料中的任何材料製 成,其中包括(但不限於):例如,有機材料(例如,一般用 於低成本基板中)、陶竞、纖維玻璃、樹脂、塑膠、聚合物 及其組合物。該導電襯墊58可能係由各種適當材料令:任 何材料製成’包括(但不限於):例如,金屬、銅、銀、金、 、鈦、鈕或其組合物。在一項較佳的具體實施例中,該 等井54具有形成於有機材料中的鋼襯墊58。 該導電襯墊6〇可錢各種適#材财的㈣材料,包括 (但不限於):例如,烊料、導電黏合劑、導電聚合物材料、 金屬化合物或其組合物。若將谭料用於該第一導電材料 6〇,則該焊料較佳的係允許間距小於例如,9g㈣之一超 精細間距焊料。例如,可將此類超精細間距焊料網版印刷 進°亥等井54内。另一較佳焊料係,例如,Harima化學公司 生 ^ 的 Super SolderTM,其可能具有如、rc〇〇 Cu、 及焊;之組合。但是,有許多其他合適的焊料可用,而 且該些焊料亦可詩本發明之-項具體實施例。例如,圖3 將-無錯焊料用作該第一導電材料6〇。當將焊料用作 /等井4内的第導電材料6〇時,例如,可將該焊料沈積 進入-亥寻井54且然後在將該等螺柱4〇插入該焊料時藉由加 熱基板24來回焊該焊料(即,進行加熱以使得該螺柱40可穿 透該焊料)。 例在將一導電黏合劑(例如,導電的聚合物材料)用 ^井Θ的第導電材料6〇時,可將該導電黏合劑沈 98563.doc •13· 200536131 積入該等井54,並可在該導電材料6〇固化前將該等螺柱4〇 插入該第一導電材料6〇。在一項較佳的具體實施例中該 導電黏合劑可能保持不固化直至其被處理,以便為插入該 等螺柱40提供充分的時間。例如可藉由加熱㈣合劑、向 該黏合劑添加另一化學物質、將該黏合劑曝露於一特定氣 體或環境、或該些方法之組合來提供此類處理。但是,在 其他具體實施例中,該導電黏合劑可僅於一指定的時間週 期内固化’,在一項較佳具體實施例中,該導電黏合 劑在固化㈣持-指枝量之可撓性以允料螺柱在其 中略有移動’從而減輕熱應力。在此項或其他具體實施例 (包括以焊料作為該第一導電材料6〇之具體實施例)中,亦可 藉由橫跨於晶片22與基板24之間的導線螺_而提供可撓 性。該可撓性可減輕由於(例如)不同材料之不同咖而引起 的應力之影響。 …當該晶片22係電連接至該基板24(例如,如圖3所示)時, •亥寻螺柱4G至少係部分嵌人該井54内的第—導電材料㈣ 以在該晶片22與該基板24之間形成電連接。較佳的係,在 將_柱40插入該等井54之前,在該晶片22上形成該等 螺°同樣’較佳的係’在將該等螺柱4G插人該等井54 之月J #由5亥第-導電材料6〇來填滿(或部分填滿)該等井 54 ° 例如,如圖2及3所*,在將該等螺柱4〇插入該等井洲 的第-導電材料60内以將該晶片22與基板24互連後,可在 該晶片22與該基板24之間提供一側填滿材料3〇。例如,咳 98563.doc 200536131 側填滿材料30可能係傳統的側填滿材料。 再-人關庄圖3之基板24,其中形成有導電跡線64之—第二 基板層62係位於該第一基板層48之下。用於至少一井5斗之 第一導電材料60係電連接至該第二基板層62内的至少—導 電跡線64。因此’當一井襯墊58覆蓋一井54之底部乂時(如 圖3所示),經由該井襯墊58將該第一導電材料⑼電連接至 一或多個跡線64 ^ —項具體實施例中的一基板以可能具有 一或多層導線跡線(例如,該第二基板層62)。圖3顯示此類 層62t的二層,且(例如)在該等二層之間可能有任何數目之 額外層62。該等導電跡線64可能係由各種適當材料中的任 何材料製成,包括(但不限於):例如,金屬、銅、鋁、金、 或其組合物。例如,一般在基板24中所提供的,在包含該 等導電跡線64之層62中可使用一絕緣材料(例如,有機材 料)。 通道68延伸至該基板24之一第二側7〇並填充有一第二導 電材料72(例如’金屬),如圖3所示。端子74係位於該第二 基板侧70上。該等導電通道68提供端子74與導電跡線之 間的電連接。例如,如圖2及3所示,該等端子74可能具有 形成於其上的焊球28以提供一球栅格陣列結構。從而,例 如,在圖3之範例中,經由一螺柱4〇、填充有該第一導電材 料60之一井54、至少一導電跡線64、一導電通道材料”及 一端子74,將顯示於該第二基板側7〇上的焊球“電連接至 垓晶片22上的接觸墊42中之一接觸塾。 應注意,在圖3中,由該等螺柱40之插入深度決定以及由 98563.doc -15- 200536131 螺柱長度之-致性決;t,該等螺柱40中的部分或全部螺柱 可能係摘置於井54之底部56上。可將該晶片22暫時固持於 該絲24上以使得在將料餘爾人該等井顺以及將 該第一導電材料60固化或冷卻為一固體形式時,該等螺柱 40中的極少數螺柱或無任一螺柱達到該等井底部56。’、主 圖4及5說明依據本發明之一第二項具體實施例之一半導 體晶片封裝20。該第二項具體實施例類似於該第一項具體 實施例(參考圖2及3),不同之處係改變對第_導體材料的 之選擇並提供支撐部件8〇(參見圖4及5)。圖伟該第二項呈 體實施例之封裝20之-侧視圖。如圖⑴,基於對圖4中的 螺柱4〇及支撐部件8〇作說明之目的而已切#j掉㈣填滿材 料30之若干部分。圖5係更詳細顯示該封裝2()之—斷面的圖 4之一放大部分。 參考圖5’顯示在此範例中—切部件⑽從㈣—基板声 48延伸。該支撑部件8〇可能係該第一基板層48之一整合: 分。在另-項具體實施例中,該支撑部件8〇可能係形成於 該第一基板層48上及/或係附著於該第—基板層48。在另一 項具體實施例中,該支撑部件8〇可能係該晶片22之部分, 可能從該晶片22延伸,及/或者可能係、附著於該晶片22。用 於錢撐部件80之材料可能係、選自各種適當材料中的任何 材料,其中包括(但不限於):例如,聚合物、有機材料、全 屬、塑膠、陶£、纖維玻璃、樹脂、石夕及其組合物。較佳 的係1等支撑部件8〇皆具有相同的高度。但是在其他具 體實施例令,例如,兮笠* # 例女°亥荨支撐部件8 0不一定皆具有相同的 98563.doc -16· 200536131 南度(例如,相對於該基板24傾斜之晶片22)。 在一較佳組態中,該晶片22係擱置於該支撐部件8〇上且 至少部分受該支撐部件80支撐。在該等螺柱4〇之長度不一 致之情況下,使用支撐部件80可能有利。同樣,藉由讓該 晶片22搁置於該等支撐部件80上,而可藉由該等支撐部件 8〇之高度而非該等螺柱40之長度及/或該等井“之深度來 控制該晶片22與該基板24之間的距離。在圖5所示之範例組 態中,相對於該等井54之深度以及相對於平均螺柱長度, 該等支撐部件80之高度使得該等螺柱4〇不接觸該等井底部 %。因此,該晶片22可能完全受該等支撐部件肋之支撐, 直至該第一導電材料60在將該等螺柱40浸入其中後固化或 冷卻至-固體形式。在該第一導電材料6〇變成凝固且將該 側填滿材料3G放置於該晶片22與該基㈣之間後,該第一 導電材料60及該側填滿材料3〇亦可能有助於支撐該晶片Μ 亚將該晶片22固持於適當位置。儘管圖2至5之第-及第二 項具體實施例中顯示側填滿材料3〇,但在其他具體實施例 (未頁不)中可此無側填滿材料,因為該側填滿材料可能不需 或可能不理想。此情形可能使得該結構具有額外的可 撓性以減輕應力。 熟習此項技術者將會明白,對於本發明之一項具體實施 同祥,’ W 8〇之尚度、形狀、放置及數目可能有變化。 1序1於本發明之一項具體實施例,該等井54之深度及 ^ )可能有變化。該等井54之斷面形狀亦可能變 • 匕括圓形、橢圓形、正方形、矩形或具有圓角。 98563.doc -17- 200536131 而且,對於本發明之一項具體實施例,導線尺寸、球尺寸 及螺柱長度可能有變化。作為一說明性的範例,該等井54 可能係味度約200 μπι而直彳至約1 〇〇 μη,該等螺柱4〇可能係 導線直控:約50 μιη而長度約300 μηι,而該等支樓部件之高 度可能約為150 μπι。因此,在此類情況下,例如,該第一 晶片側44與該第一基板側50之間的間隔可能約為15〇 μηι, 該等螺柱40之尖端從該等井底部56起將約為5〇 μιη,而該螺 柱40之約150 μπι將浸入該第一導電材料4〇内(假定此情況 下在插入該螺柱40後該第一導電材料6〇填滿該井54)。例 如,在其他具體實施例中,該等螺柱4〇之長度可能在約5〇 μηι與約300 μιη之間,而其導線直徑在約3〇μιη與約5〇μιη2 間。 放置於每一井54内的該第一導電材料6〇之數量可能有變 化而使得在插入該等螺柱40後藉由該第一導電材料4〇來填 滿、不完全填滿該井54,或使該井54溢出。若該第一導電 材料60在一螺柱40插入其中後溢出填滿一井54,則該第一 導電材料60之多餘部分將可能黏著並弄濕在該基板表面上 的該等螺柱40之側;從而避免該第一導電材料6〇之多餘部 分散佈於整個第一基板側5〇而可能造成不必要的短路。因 此,藉由邊第一導電材料6〇來弄濕或抽吸該等螺柱可能係 «亥β又计之較佳而有利之特徵。在一項較佳具體實施例 中,该第一導電材料60僅填滿一井54(參見,例如圖3及5) 或僅略溢出填滿一井54(抽吸至該等螺柱4〇)以使得該螺柱 40與該第一導電材料6〇之間的接觸區域最大化。但是,在 98563.doc -18- 200536131 其他具體實施例中,在插人該等螺柱4G後,第—導電材料 60之數里可能側填滿該等井54。如同該第—項具體實施例 樣,该第一導電材料6〇可能係(例如)桿料。 在一項較佳具體實施例中,該基板可能係(例如)具有一 更厚的第一基板層48之一低成本基板24,在該第一基板層 48内形成井54(而非凸塊定㈣)。同樣,在其他具體實施例 (未顯示)中,該基板24可能係除BGA以外之一組態,例如, 具有從該第二基板側70或該基板的其他側延伸的接針或引 線之一基板24。藉由此揭示内容之優點,熟習此項技術者 在本發明之一項具體實施例併入該等底部井54時將能實現 基板設計上的許多其他變化。同樣,熟習此項技術者將會 明白,該等晶片接觸墊42(以及因此該等螺柱4〇)在一晶片K 上之放置及陣列組態可能有很大的變化。 本發明之一項具體實施例之另一優點係,可能明顯地減 小在一焊料凸塊組態中焊料接合處一般所經受的應力集 中。此類應力經常係由於該晶片22、該等焊料凸塊26(參 考,例如圖1)與該基板24之間的熱膨脹係數(CTE)失配而引 起。藉由本發明之一項具體實施例所提供之一結構組態, 此類CTE失配可能產生較小的影響且可能對該晶片22處的 焊接接合處施加較小的應力,及/或一項具體實施例之結構 可能能夠處置高得多之應力(與一焊料凸塊組態相比)。同 樣,當該晶片22將弱介電材料(例如,低k及超低k介電材料) 併入該等金屬層間介電層中時(此情況正變得更為普遍),減 小由CTE失配及其他應力源在該晶片上造成的應力便係重 98563.doc -19- 200536131 要的。該等螺柱40可能允許比焊料凸塊更大的橫向可繞 性’從而將有助於減輕由CTE失配造成的熱應力,而並非 僅將該等應力傳送至該晶片22。因此,該等螺柱4〇較佳的 係由一可撓性材料(例如,金)而非一剛性材料製成。 儘管圖2至5之第一及第二項具體實施例中顯示並說明螺 柱46係由一開始具有一球形尖端之導線形成,但在其他具 體實施例(未顯示)中該導線尖端之初始形狀可能有變化。例 如,該初始導線尖端在為形成該先前螺柱而分離之後可能 並不具有特別形成之形狀。例如,該螺柱可能係藉由一模 形焊接而形成於該晶片接觸墊上。或者,例如,該導線尖 端之初始形狀可能已形成為某一其他形狀(即,非球形)。藉 由本揭示内容之優點,熟習此項技術者可實現該等螺柱扑 之其他可能的變化。 雖然已詳細說明本發明之具體實施例及其優點,但是應 瞭解可在本文中進行各種變更、替換及修改,而不脫離如 隨附申請專利範圍所定義的本發明精神及範疇。此外,本 發明之範疇並不希望限於該說明書中所說明之程序、機 器、製造、物質組成、構件、方法及步驟之特定具體實施 例。從本發明之揭示内容,熟習此項技術者將容易明白, 依據本發明可使用目前已存在或以後將要開發的實行與本 文所說明之對應具體實施例相同之功能或獲得實質上相同 結果之程序、機器、製造、物質組成、構件、方法或步驟。 因此,希望該等隨附申請專利範圍在其範疇内包括此類程 序、機器、製造、物質組成、構件、方法或步驟。 98563.doc -20- 200536131 【圖式簡單說明】 下面係對圖式之簡要說明,該等圖式說明本發明之範例 性具體實施例,且在該等圖式中: 圖1係先前技術之i裝晶片封裝之—側視圖; 圖2係依據本發明之-第—項具體實施例之-倒裝晶片 封裝之一側視圖; 圖3係圖2之一部分之一放大斷面圖; 倒裝晶片 封裝之一側視圖;以及 圖5係圖4之一部分之一放大斷面圖 【主要元件符號說明】 圖4係依據本發明之—第二項具體實施例之 20 傳統倒裝晶片 22 晶片 24 基板 26 焊料凸塊陣列 28 焊球陣列 30 側填滿材料 32 蓋 40 螺桎 42 晶片接觸墊 44 第一側 46 伸長部分 47 球形部分 48 絕緣材料之第 層/第一基板層 98563.doc -21 - 200536131 50 基板之第一側 54 井 56 底部 58 導電襯墊 60 第一導電材料 62 第二基板層 64 導電跡線 68 導電通道 70 第二基板側 72 第二導電材料 74 端子 80 支撐部件 98563.doc 22-
Claims (1)
- 200536131 十、申請專利範圍: 1· 一種半導體晶片封裝,其包含·· 一積體電路晶片; =晶片接觸塾,其係形成於該晶片之-第-側上; 累柱Λ係、形成於該晶片接觸塾上,該螺柱係藉使 用導線焊接機而由導線形成,該螺柱具有從該晶片接 觸墊延伸之一伸長部分; 一基板,其包含·· 邑緣材料之第一層,其係處於該基板之一第一側 上, 井,其係形成於該第一層内且朝該基板之該第一 側開口,該井具有一底部, 一第一導電材料,其至少部分填滿該井,以及 —一第-層’其具有形成於其中之導電跡線,其中該 第-導電材料係電連接至該等跡線t的至少一跡線;以 及 其中該螺柱係部分後入該第一導電材料内以在該晶片 與該基板之間形成-電連接,而且其中該“之該第一 側面對該基板之該第一側。 2·如請求項1之半導體晶片封裝,其進一步包含·· V私襯墊,其係至少部分地將該井加襯,其中該井 内之α亥第^電材料係經由該導電襯塾而電連接至該至 少一跡線。 3.如請求項丨之半導體晶片封裝,其中該導電襯墊包含銅。 98563.doc 200536131 4.如請求項1之半導體晶片封裝,其中該螺柱包含金且其中 該接觸墊之該最外面表面包含金。 5·如请求項1之半導體晶片封裝,其中該第一基板層之該絕 緣材料包含一有機材料。 6·如睛求項1之半導體晶片封裝,其中該第一導電材料包含 焊料。 如睛求項1之半導體晶片封裝,其中該第一導電材料包含 一導電黏合劑。 8.如請求項1之半導體晶片封裝,其中該基板進一步包含 二或多層,其具有形成於其中的導電跡線; 一第二側,其與該第一側相反, 一端子,其在該第二側上, 一通道,其填充有一第二 連接至該通道内的該第二導 料係電連接至該等導電跡線 該端子係經由該螺柱、該第 中的至少一跡線以及該第二 接觸墊。 導電材料,其中該端子係電 電材料,其中該第二導電材 中的至少一跡線,而且其中 一導電材料、該等導電跡線 導電材料而電連接至該晶片 9·如請求項1之半導體晶片封裝,其進一步包含: 一支樓部件,其從該基板之該第—層延伸於該晶片 該基板之間,其中該晶片係至少部分受該支 撐。 ,其中該支撐部件包含聚合 10.如請求項9之半導體晶片封裝 物材料。 98563.doc 200536131 1 1 ·如請求項1之半導體晶片封裝,苴 ^ > 具進一步包含位於該晶片 與該基板之間的一側填滿材料。 12. 如請求項1之半導體晶片封H中該餘具有焊接至該 晶片接觸墊之一部分党擠壓的焚 幻衣形部分,而且其中該伸 長部分從該部分受擠壓的球形部分延伸。 13. —種形成一半導體晶片封裝之方法,其包含: 藉由-導線焊接機,採取導線焊接方法將一導線焊接 至一積體電路晶片之一第-側上的-晶片接觸墊上; 分離該導線以使得該導線之一伸長部分保持從該晶片 接觸墊延伸以形成一螺柱; 將該螺柱之該伸長部分之至少部分浸入一第一導電材 料以在該晶片與一基板之間形成一電連接,苴中一 導電材料係形成於一井内,1巾 人 才門其中该井係形成於該基板之 一第一層内,其中該井朝該基板之—第_側開口,其中 該f具有—底部,其中該第-導電材料係電連接至形成 =基板之一第二層内之一跡線’其中該第一基板層在 :第二基板層上,而且,使得該晶片之該第一側面對該 土板之彡亥第'一側。 A 2求項13之方法,其中該導線在該導線焊接之前具有 :、:穴端’而且其中該球形尖端在該導線焊接期間變 、子著°亥晶片接觸塾而部分受擠壓。 15.:二求項13之方法,其中該第一導電材料包含一導電黏 5训,而且其中該方法進一步包含: 糈由該第-導電材料至少部分填滿該井;以及 98563.doc 200536131 在該浸入後固化該 16 ·如請求項13之方法, 且其中該方法進一步 焊料。 第一導電材料。 其中該第一導電材料包含焊料,而 包含在該浸入之前至少部分熔化該 17· —種半導體晶片封裝,其包含·· 一積體電路晶片; 一晶片接觸墊,其係形成於該晶片之一第一側上; -螺柱’其係形成於該晶片接觸墊上,該螺柱具有從 該晶片接觸墊延伸之一伸長部分; 一基板,其包含: -絕緣材料之第-層,其在該基板之_第一側上, 井,其係形成於該第一層内且朝該基板之該第一 側開口,該井具有一底部, 一導電襯墊,其係至少部分地將該井加襯, 一第一導電材料,其至少部分填滿該井,以及 一第二層,其具有形成於其中之導電跡線,其中該 第一導電材料係經由該導電襯塾而電連接至該等跡線中 的至少一跡線;以及 支撐α卩件其從δ亥基板之該第一層延伸於該晶片與 。亥基板之間,其中该螺柱係部分嵌入於該第一導電材料 内以在4曰曰片與該基板之間形成一電連接,其中該晶片 之該第一側面對該基板之該第一側,而且其中該晶片係 至少部分受該支撐部件所支撐。 1 8 ·如明求項1 7之半導體晶片封裝,其中該螺柱具有焊接至 98563.doc -4- 200536131 該晶片接觸墊之一部分受擠壓的球形部分,而且其中該 伸長部分從該部分受擠壓的球形部分延伸。 19. 如請求項17之半導體晶片封裝,其中該第一導電材料包 含焊料。 20. 如請求項17之半導體晶片封裝,其中該第一導電材料包 含一導電黏合劑。 98563.doc
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TW569416B (en) * | 2002-12-19 | 2004-01-01 | Via Tech Inc | High density multi-chip module structure and manufacturing method thereof |
US6963494B2 (en) * | 2003-06-13 | 2005-11-08 | Itt Manufacturing Enterprises, Inc. | Blind hole termination of pin to pcb |
-
2003
- 2003-12-30 US US10/749,111 patent/US20050151273A1/en not_active Abandoned
-
2004
- 2004-12-21 JP JP2006547343A patent/JP2007517405A/ja active Pending
- 2004-12-21 KR KR1020067013106A patent/KR20060108742A/ko not_active Application Discontinuation
- 2004-12-21 WO PCT/US2004/043223 patent/WO2005065255A2/en active Application Filing
- 2004-12-21 EP EP04815317A patent/EP1714319A2/en not_active Withdrawn
- 2004-12-21 CN CNA2004800367744A patent/CN1890807A/zh active Pending
- 2004-12-30 TW TW093141415A patent/TW200536131A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
CN1890807A (zh) | 2007-01-03 |
WO2005065255A3 (en) | 2005-10-13 |
WO2005065255A2 (en) | 2005-07-21 |
JP2007517405A (ja) | 2007-06-28 |
KR20060108742A (ko) | 2006-10-18 |
US20050151273A1 (en) | 2005-07-14 |
EP1714319A2 (en) | 2006-10-25 |
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