TW200536063A - Plating method - Google Patents

Plating method Download PDF

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Publication number
TW200536063A
TW200536063A TW094106931A TW94106931A TW200536063A TW 200536063 A TW200536063 A TW 200536063A TW 094106931 A TW094106931 A TW 094106931A TW 94106931 A TW94106931 A TW 94106931A TW 200536063 A TW200536063 A TW 200536063A
Authority
TW
Taiwan
Prior art keywords
resist layer
plating
negative resist
semiconductor wafer
pattern
Prior art date
Application number
TW094106931A
Other languages
English (en)
Chinese (zh)
Inventor
Takaharu Yamano
Original Assignee
Shinko Electric Ind Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Ind Co filed Critical Shinko Electric Ind Co
Publication of TW200536063A publication Critical patent/TW200536063A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/202—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials for lift-off processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW094106931A 2004-03-11 2005-03-08 Plating method TW200536063A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004069421A JP3715637B2 (ja) 2004-03-11 2004-03-11 めっき方法

Publications (1)

Publication Number Publication Date
TW200536063A true TW200536063A (en) 2005-11-01

Family

ID=34918491

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094106931A TW200536063A (en) 2004-03-11 2005-03-08 Plating method

Country Status (5)

Country Link
US (1) US7790359B2 (https=)
JP (1) JP3715637B2 (https=)
KR (1) KR20060043811A (https=)
CN (1) CN100533686C (https=)
TW (1) TW200536063A (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007299960A (ja) * 2006-04-28 2007-11-15 Toshiba Corp 半導体装置及びその製造方法
JP5247998B2 (ja) * 2006-08-11 2013-07-24 株式会社テラミクロス 半導体装置の製造方法
JP2009266995A (ja) * 2008-04-24 2009-11-12 Casio Comput Co Ltd 半導体装置の製造方法
US20120261254A1 (en) * 2011-04-15 2012-10-18 Reid Jonathan D Method and apparatus for filling interconnect structures
JP5782398B2 (ja) * 2012-03-27 2015-09-24 株式会社荏原製作所 めっき方法及びめっき装置
CN102707566A (zh) * 2012-05-22 2012-10-03 上海宏力半导体制造有限公司 光刻方法
JP6328582B2 (ja) * 2014-03-31 2018-05-23 株式会社荏原製作所 めっき装置、および基板ホルダの電気接点の電気抵抗を決定する方法
CN105575880B (zh) * 2014-10-09 2018-10-23 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制作方法
CN104538287B (zh) * 2014-11-24 2017-08-11 通富微电子股份有限公司 半导体制造电镀治具密封接触光阻区域形成方法
US10014170B2 (en) 2015-05-14 2018-07-03 Lam Research Corporation Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity
CN106773537B (zh) * 2016-11-21 2018-06-26 中国电子科技集团公司第十一研究所 一种基片的表面光刻和湿法刻蚀方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3391125B2 (ja) 1994-12-15 2003-03-31 株式会社デンソー 半導体ウエハ用メッキ治具
JP4037504B2 (ja) 1998-01-09 2008-01-23 株式会社荏原製作所 半導体ウエハのメッキ治具
JP3415089B2 (ja) * 1999-03-01 2003-06-09 住友金属鉱山株式会社 プリント配線板の製造方法
JP3430290B2 (ja) * 1999-11-26 2003-07-28 カシオ計算機株式会社 半導体装置の製造方法
JP4649792B2 (ja) 2001-07-19 2011-03-16 日本電気株式会社 半導体装置
JP2003151875A (ja) * 2001-11-09 2003-05-23 Mitsubishi Electric Corp パターンの形成方法および装置の製造方法

Also Published As

Publication number Publication date
CN1667802A (zh) 2005-09-14
CN100533686C (zh) 2009-08-26
US20050202346A1 (en) 2005-09-15
US7790359B2 (en) 2010-09-07
JP3715637B2 (ja) 2005-11-09
JP2005256090A (ja) 2005-09-22
KR20060043811A (ko) 2006-05-15

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