TW200534334A - Processing apparatus and method for removing particles therefrom - Google Patents
Processing apparatus and method for removing particles therefrom Download PDFInfo
- Publication number
- TW200534334A TW200534334A TW094105654A TW94105654A TW200534334A TW 200534334 A TW200534334 A TW 200534334A TW 094105654 A TW094105654 A TW 094105654A TW 94105654 A TW94105654 A TW 94105654A TW 200534334 A TW200534334 A TW 200534334A
- Authority
- TW
- Taiwan
- Prior art keywords
- temperature
- pressure
- gas
- item
- container
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 197
- 239000002245 particle Substances 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 50
- 230000006837 decompression Effects 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000001514 detection method Methods 0.000 claims description 11
- 238000004321 preservation Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 abstract description 16
- 238000011109 contamination Methods 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 84
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000009182 swimming Effects 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 4
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052770 Uranium Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 2
- 238000013022 venting Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 230000036760 body temperature Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000805 composite resin Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63C—SKATES; SKIS; ROLLER SKATES; DESIGN OR LAYOUT OF COURTS, RINKS OR THE LIKE
- A63C17/00—Roller skates; Skate-boards
- A63C17/18—Roller skates; Skate-boards convertible into ice or snow-running skates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63C—SKATES; SKIS; ROLLER SKATES; DESIGN OR LAYOUT OF COURTS, RINKS OR THE LIKE
- A63C1/00—Skates
- A63C1/04—Skates fastened by means of clamps
- A63C1/16—Special structure of the clamp fastening devices
-
- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63C—SKATES; SKIS; ROLLER SKATES; DESIGN OR LAYOUT OF COURTS, RINKS OR THE LIKE
- A63C1/00—Skates
- A63C1/22—Skates with special foot-plates of the boot
- A63C1/26—Skates with special foot-plates of the boot divided into two parts permitting adjustment to the size of the foot
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
- H01J2237/0225—Detecting or monitoring foreign particles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004051706A JP4330467B2 (ja) | 2004-02-26 | 2004-02-26 | プロセス装置及び該プロセス装置内のパーティクル除去方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200534334A true TW200534334A (en) | 2005-10-16 |
| TWI373787B TWI373787B (enExample) | 2012-10-01 |
Family
ID=34879627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094105654A TW200534334A (en) | 2004-02-26 | 2005-02-24 | Processing apparatus and method for removing particles therefrom |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7347006B2 (enExample) |
| JP (1) | JP4330467B2 (enExample) |
| KR (1) | KR100635436B1 (enExample) |
| CN (1) | CN100349043C (enExample) |
| TW (1) | TW200534334A (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10216786C5 (de) * | 2002-04-15 | 2009-10-15 | Ers Electronic Gmbh | Verfahren und Vorrichtung zur Konditionierung von Halbleiterwafern und/oder Hybriden |
| DE102004044176A1 (de) * | 2004-09-13 | 2006-03-30 | BSH Bosch und Siemens Hausgeräte GmbH | Trocknungsverfahren für ein Haushaltsgerät und Haushaltsgerät zur Durchführung des Trocknungsverfahren |
| JP5036290B2 (ja) * | 2006-12-12 | 2012-09-26 | 東京エレクトロン株式会社 | 基板処理装置および基板搬送方法、ならびにコンピュータプログラム |
| JP5064119B2 (ja) * | 2007-06-07 | 2012-10-31 | 東京エレクトロン株式会社 | 真空引き方法及び記憶媒体 |
| US20090086471A1 (en) * | 2007-07-30 | 2009-04-02 | Bollman James E | Illuminated landscape module for existing edging system |
| US7473006B1 (en) * | 2007-07-30 | 2009-01-06 | James Bollman | Illuminated landscape edging system |
| US7837805B2 (en) * | 2007-08-29 | 2010-11-23 | Micron Technology, Inc. | Methods for treating surfaces |
| KR100905213B1 (ko) | 2007-09-19 | 2009-07-01 | 세메스 주식회사 | 기판 처리 장치 |
| EP2058427A1 (en) * | 2007-11-06 | 2009-05-13 | BSH Electrodomésticos España, S.A. | Household appliance having a heat pump unit and means for cooling a component thereof |
| US8361276B2 (en) * | 2008-02-11 | 2013-01-29 | Apjet, Inc. | Large area, atmospheric pressure plasma for downstream processing |
| JP4611409B2 (ja) * | 2008-09-03 | 2011-01-12 | 晃俊 沖野 | プラズマ温度制御装置 |
| JP5121684B2 (ja) * | 2008-12-11 | 2013-01-16 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US8591755B2 (en) * | 2010-09-15 | 2013-11-26 | Lam Research Corporation | Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same |
| CN102368466B (zh) * | 2011-09-20 | 2013-11-27 | 天通吉成机器技术有限公司 | 一种干法刻蚀坚硬无机材料基板等离子体刻蚀机的电极 |
| KR20150046966A (ko) * | 2013-10-23 | 2015-05-04 | 삼성디스플레이 주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
| CN104716069B (zh) * | 2015-03-23 | 2017-10-17 | 上海华力微电子有限公司 | 晶圆可接受性测试机台内部环境的监测方法和监测装置 |
| CN105097408B (zh) * | 2015-07-21 | 2017-09-26 | 深圳市华星光电技术有限公司 | 一种干法刻蚀机台及其使用方法 |
| CN105589232A (zh) * | 2016-03-11 | 2016-05-18 | 京东方科技集团股份有限公司 | 一种显示面板加工设备 |
| JP2019169635A (ja) | 2018-03-23 | 2019-10-03 | 東京エレクトロン株式会社 | クリーニング方法及び処理装置 |
| JP7122864B2 (ja) | 2018-05-14 | 2022-08-22 | 東京エレクトロン株式会社 | クリーニング方法及び基板処理装置 |
| JP7462383B2 (ja) | 2019-04-15 | 2024-04-05 | 東京エレクトロン株式会社 | クリーニング方法及びプラズマ処理装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0757297B2 (ja) * | 1987-04-22 | 1995-06-21 | 日本真空技術株式会社 | 真空排気系用微粒子トラツプ |
| US5367139A (en) | 1989-10-23 | 1994-11-22 | International Business Machines Corporation | Methods and apparatus for contamination control in plasma processing |
| US5589041A (en) * | 1995-06-07 | 1996-12-31 | Sony Corporation | Plasma sputter etching system with reduced particle contamination |
| JP2786144B2 (ja) * | 1996-01-30 | 1998-08-13 | 九州日本電気株式会社 | 半導体装置の製造方法 |
| JP3171161B2 (ja) * | 1998-03-20 | 2001-05-28 | 日本電気株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| JP2002196367A (ja) * | 2000-02-10 | 2002-07-12 | Matsushita Electric Ind Co Ltd | 液晶表示装置 |
| JP2001305546A (ja) * | 2001-04-09 | 2001-10-31 | Matsushita Electric Ind Co Ltd | 液晶表示パネル及びその製造方法 |
| US6811651B2 (en) * | 2001-06-22 | 2004-11-02 | Tokyo Electron Limited | Gas temperature control for a plasma process |
-
2004
- 2004-02-26 JP JP2004051706A patent/JP4330467B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-24 KR KR1020050015360A patent/KR100635436B1/ko not_active Expired - Fee Related
- 2005-02-24 TW TW094105654A patent/TW200534334A/zh not_active IP Right Cessation
- 2005-02-25 US US11/065,359 patent/US7347006B2/en not_active Expired - Lifetime
- 2005-02-28 CN CNB2005100529177A patent/CN100349043C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR100635436B1 (ko) | 2006-10-18 |
| JP4330467B2 (ja) | 2009-09-16 |
| KR20060042140A (ko) | 2006-05-12 |
| US20050189071A1 (en) | 2005-09-01 |
| TWI373787B (enExample) | 2012-10-01 |
| CN1661433A (zh) | 2005-08-31 |
| JP2005243915A (ja) | 2005-09-08 |
| US7347006B2 (en) | 2008-03-25 |
| CN100349043C (zh) | 2007-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW200534334A (en) | Processing apparatus and method for removing particles therefrom | |
| TW575902B (en) | SOI wafer and manufacturing method of SOI wafer | |
| KR100239389B1 (ko) | 플라즈마 에칭장치 | |
| TW200912989A (en) | Plasma processing device, electrode temperature adjusting device and method | |
| CN108346568A (zh) | 处理被加工物的方法 | |
| WO2003081646A3 (en) | System and method for heating and cooling wafer at accelerated rates | |
| JP2008277746A (ja) | プラズマ処理装置及びプラズマ処理方法 | |
| JP4086967B2 (ja) | 静電チャックのパーティクル発生低減方法及び半導体製造装置 | |
| CN223066119U (zh) | 预清洁装置及半导体设备 | |
| JP2008182204A (ja) | 基板を加熱する方法および装置 | |
| KR101983751B1 (ko) | 실리콘 단결정 인상 장치 내의 부재의 재생 방법 | |
| US8906164B2 (en) | Methods for stabilizing contact surfaces of electrostatic chucks | |
| JP2008182205A (ja) | 基板を加熱する方法および装置 | |
| JPS63293813A (ja) | 半導体基板 | |
| JP5453024B2 (ja) | プラズマエッチング処理方法 | |
| JPH09162176A (ja) | プラズマ処理装置 | |
| JPH1167751A (ja) | 保護膜付きシリコンウェーハの製造方法およびその製造装置 | |
| JP2002075872A (ja) | 真空処理装置 | |
| JPH0529265A (ja) | プラズマアツシング装置 | |
| JP2005166916A (ja) | 半導体装置の製造方法 | |
| JPH03154334A (ja) | 低温処理方法および装置 | |
| JPH1187202A (ja) | 炭化ケイ素モニタウエハ | |
| JPS6317518A (ja) | サセプタ加熱方法 | |
| Robb | Plasma etching for backside wafer thinning of SiC | |
| JP2613296C (enExample) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |