TW200516344A - Photoacid generators - Google Patents

Photoacid generators

Info

Publication number
TW200516344A
TW200516344A TW093115392A TW93115392A TW200516344A TW 200516344 A TW200516344 A TW 200516344A TW 093115392 A TW093115392 A TW 093115392A TW 93115392 A TW93115392 A TW 93115392A TW 200516344 A TW200516344 A TW 200516344A
Authority
TW
Taiwan
Prior art keywords
alkyl
group
perfluoroalkyl
nitro
alkoxy
Prior art date
Application number
TW093115392A
Other languages
English (en)
Chinese (zh)
Inventor
Francis M Houlihan
Medhat A Toukhy
Salem K Mullen
Original Assignee
Clariant Int Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Int Ltd filed Critical Clariant Int Ltd
Publication of TW200516344A publication Critical patent/TW200516344A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
TW093115392A 2003-06-30 2004-05-28 Photoacid generators TW200516344A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/609,735 US20040265733A1 (en) 2003-06-30 2003-06-30 Photoacid generators

Publications (1)

Publication Number Publication Date
TW200516344A true TW200516344A (en) 2005-05-16

Family

ID=33540896

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093115392A TW200516344A (en) 2003-06-30 2004-05-28 Photoacid generators

Country Status (6)

Country Link
US (1) US20040265733A1 (https=)
EP (1) EP1642172A2 (https=)
JP (1) JP2007506992A (https=)
KR (1) KR20060025175A (https=)
TW (1) TW200516344A (https=)
WO (1) WO2005003858A2 (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7820369B2 (en) * 2003-12-04 2010-10-26 International Business Machines Corporation Method for patterning a low activation energy photoresist
US7473512B2 (en) * 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
JP2006078760A (ja) * 2004-09-09 2006-03-23 Tokyo Ohka Kogyo Co Ltd 電子線またはｅｕｖ（極端紫外光）用レジスト組成物及びレジストパターン形成方法
JP4505357B2 (ja) * 2005-03-16 2010-07-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
US7723008B2 (en) * 2005-03-22 2010-05-25 Intel Corporation Photoactive adhesion promoter in a slam
JP4724465B2 (ja) 2005-05-23 2011-07-13 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
US7255970B2 (en) * 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
US20070105040A1 (en) * 2005-11-10 2007-05-10 Toukhy Medhat A Developable undercoating composition for thick photoresist layers
US20070117041A1 (en) * 2005-11-22 2007-05-24 Christoph Noelscher Photosensitive coating for enhancing a contrast of a photolithographic exposure
JP4792299B2 (ja) * 2006-02-07 2011-10-12 富士フイルム株式会社 新規なスルホニウム化合物、該化合物を含有する感光性組成物及び該感光性組成物を用いたパターン形成方法
US7601482B2 (en) * 2006-03-28 2009-10-13 Az Electronic Materials Usa Corp. Negative photoresist compositions
US7476492B2 (en) * 2006-05-26 2009-01-13 International Business Machines Corporation Low activation energy photoresist composition and process for its use
JP2007316507A (ja) * 2006-05-29 2007-12-06 Tokyo Ohka Kogyo Co Ltd 液浸露光用レジスト組成物およびレジストパターン形成方法
US7488568B2 (en) * 2007-04-09 2009-02-10 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, compound and acid generator
JP2010134126A (ja) * 2008-12-03 2010-06-17 Jsr Corp 感放射線性組樹脂組成物
JP4820914B2 (ja) * 2010-09-24 2011-11-24 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP6049250B2 (ja) * 2010-11-30 2016-12-21 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 光酸発生剤
US8906594B2 (en) 2012-06-15 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Negative-working thick film photoresist
US9012126B2 (en) 2012-06-15 2015-04-21 Az Electronic Materials (Luxembourg) S.A.R.L. Positive photosensitive material
JP6209035B2 (ja) * 2013-09-25 2017-10-04 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置の製造方法
US10775697B2 (en) * 2014-04-22 2020-09-15 Zeon Corporation Radiation-sensitive resin composition, resin film, and electronic device
CN106032369A (zh) * 2014-12-31 2016-10-19 浙江九洲药业股份有限公司 卤代s-(全氟烷基)-二苯并噻吩盐及其制备方法
TWI731961B (zh) 2016-04-19 2021-07-01 德商馬克專利公司 正向感光材料及形成正向凸紋影像之方法
KR102261808B1 (ko) 2016-08-09 2021-06-07 리지필드 액퀴지션 환경적으로 안정한 후막성 화학증폭형 레지스트
EP3761117A4 (en) * 2018-03-27 2021-05-12 Tokyo Ohka Kogyo Co., Ltd. METHOD OF MANUFACTURING A PLATED SHAPED BODY
EP3847506A1 (en) 2018-09-05 2021-07-14 Merck Patent GmbH Positive working photosensitive material
FR3120871B1 (fr) * 2021-03-17 2024-04-19 Bostik Sa Composition à base de monomères (méth)acrylate
WO2022195221A1 (fr) * 2021-03-17 2022-09-22 Bostik Sa Composition a base de monomeres (meth)acrylate
US20230236507A1 (en) * 2022-01-26 2023-07-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor structure and photoresist composition

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4387222A (en) * 1981-01-30 1983-06-07 Minnesota Mining And Manufacturing Company Cyclic perfluoroaliphaticdisulfonimides
FR2527602A1 (fr) * 1982-06-01 1983-12-02 Anvar Bis perhalogenoacyl- ou sulfonyl- imidures de metaux alcalins, leurs solutions solides avec des matieres plastiques et leur application a la constitution d'elements conducteurs pour des generateurs electrochimiques
FR2606217B1 (fr) * 1986-10-30 1990-12-14 Elf Aquitaine Nouveau materiau a conduction ionique constitue par un sel en solution dans un electrolyte liquide
US5162177A (en) * 1986-10-30 1992-11-10 Hydro-Quebec Ion conductive material composed of a salt in solution in a liquid electrolyte
US5066795A (en) * 1989-02-10 1991-11-19 Sagami Chemical Research Center Perfluoroalkyl-containing compound
FR2645533B1 (fr) * 1989-04-06 1991-07-12 Centre Nat Rech Scient Procede de synthese de sulfonylimidures
US5273840A (en) * 1990-08-01 1993-12-28 Covalent Associates Incorporated Methide salts, formulations, electrolytes and batteries formed therefrom
WO1994024122A1 (fr) * 1993-04-14 1994-10-27 Daikin Industries, Ltd. Sulfonate de (haloalkyl)dibenzo-onium, son procede de production, et agent et procede d'haloalkylation
US5554664A (en) * 1995-03-06 1996-09-10 Minnesota Mining And Manufacturing Company Energy-activatable salts with fluorocarbon anions
JPH0954437A (ja) * 1995-06-05 1997-02-25 Fuji Photo Film Co Ltd 化学増幅型ポジレジスト組成物
JP3607432B2 (ja) * 1995-10-12 2005-01-05 株式会社東芝 感光性組成物
US5863699A (en) * 1995-10-12 1999-01-26 Kabushiki Kaisha Toshiba Photo-sensitive composition
US6280897B1 (en) * 1996-12-24 2001-08-28 Kabushiki Kaisha Toshiba Photosensitive composition, method for forming pattern using the same, and method for manufacturing electronic parts
JP3431481B2 (ja) * 1996-12-24 2003-07-28 株式会社東芝 感光性組成物、およびこれを用いたパターン形成方法ならびに電子部品の製造方法
EP0877293B1 (en) * 1997-05-09 2004-01-14 Fuji Photo Film Co., Ltd. Positive photosensitive composition
KR20040004429A (ko) * 2000-11-09 2004-01-13 이 아이 듀폰 디 네모아 앤드 캄파니 미세리쏘그래피용 포토레지스트 조성물의 광산 발생제
US6696216B2 (en) * 2001-06-29 2004-02-24 International Business Machines Corporation Thiophene-containing photo acid generators for photolithography

Also Published As

Publication number Publication date
WO2005003858A3 (en) 2005-04-21
JP2007506992A (ja) 2007-03-22
WO2005003858A2 (en) 2005-01-13
EP1642172A2 (en) 2006-04-05
US20040265733A1 (en) 2004-12-30
KR20060025175A (ko) 2006-03-20

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