KR20060025175A - 광산 발생기를 포함하는 조성물 - Google Patents

광산 발생기를 포함하는 조성물 Download PDF

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Publication number
KR20060025175A
KR20060025175A KR1020057024067A KR20057024067A KR20060025175A KR 20060025175 A KR20060025175 A KR 20060025175A KR 1020057024067 A KR1020057024067 A KR 1020057024067A KR 20057024067 A KR20057024067 A KR 20057024067A KR 20060025175 A KR20060025175 A KR 20060025175A
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KR
South Korea
Prior art keywords
composition
alkyl
group
perfluoroalkyl
substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020057024067A
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English (en)
Korean (ko)
Inventor
프란시스 엠. 호울리한
메드햇 에이. 토우키
살렘 케이. 뮬렌
Original Assignee
에이제트 일렉트로닉 머트리얼즈 유에스에이 코프.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 에이제트 일렉트로닉 머트리얼즈 유에스에이 코프. filed Critical 에이제트 일렉트로닉 머트리얼즈 유에스에이 코프.
Publication of KR20060025175A publication Critical patent/KR20060025175A/ko
Withdrawn legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
KR1020057024067A 2003-06-30 2004-06-04 광산 발생기를 포함하는 조성물 Withdrawn KR20060025175A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/609,735 US20040265733A1 (en) 2003-06-30 2003-06-30 Photoacid generators
US10/609,735 2003-06-30

Publications (1)

Publication Number Publication Date
KR20060025175A true KR20060025175A (ko) 2006-03-20

Family

ID=33540896

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057024067A Withdrawn KR20060025175A (ko) 2003-06-30 2004-06-04 광산 발생기를 포함하는 조성물

Country Status (6)

Country Link
US (1) US20040265733A1 (https=)
EP (1) EP1642172A2 (https=)
JP (1) JP2007506992A (https=)
KR (1) KR20060025175A (https=)
TW (1) TW200516344A (https=)
WO (1) WO2005003858A2 (https=)

Cited By (1)

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KR100912848B1 (ko) * 2007-04-09 2009-08-18 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물, 레지스트 패턴 형성 방법, 화합물 및산발생제

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US7473512B2 (en) * 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
JP2006078760A (ja) * 2004-09-09 2006-03-23 Tokyo Ohka Kogyo Co Ltd 電子線またはeuv(極端紫外光)用レジスト組成物及びレジストパターン形成方法
JP4505357B2 (ja) * 2005-03-16 2010-07-21 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
US7723008B2 (en) * 2005-03-22 2010-05-25 Intel Corporation Photoactive adhesion promoter in a slam
JP4724465B2 (ja) 2005-05-23 2011-07-13 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
US7255970B2 (en) * 2005-07-12 2007-08-14 Az Electronic Materials Usa Corp. Photoresist composition for imaging thick films
US20070105040A1 (en) * 2005-11-10 2007-05-10 Toukhy Medhat A Developable undercoating composition for thick photoresist layers
US20070117041A1 (en) * 2005-11-22 2007-05-24 Christoph Noelscher Photosensitive coating for enhancing a contrast of a photolithographic exposure
JP4792299B2 (ja) * 2006-02-07 2011-10-12 富士フイルム株式会社 新規なスルホニウム化合物、該化合物を含有する感光性組成物及び該感光性組成物を用いたパターン形成方法
US7601482B2 (en) * 2006-03-28 2009-10-13 Az Electronic Materials Usa Corp. Negative photoresist compositions
US7476492B2 (en) * 2006-05-26 2009-01-13 International Business Machines Corporation Low activation energy photoresist composition and process for its use
JP2007316507A (ja) * 2006-05-29 2007-12-06 Tokyo Ohka Kogyo Co Ltd 液浸露光用レジスト組成物およびレジストパターン形成方法
JP2010134126A (ja) * 2008-12-03 2010-06-17 Jsr Corp 感放射線性組樹脂組成物
JP4820914B2 (ja) * 2010-09-24 2011-11-24 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP6049250B2 (ja) * 2010-11-30 2016-12-21 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC 光酸発生剤
US8906594B2 (en) 2012-06-15 2014-12-09 Az Electronic Materials (Luxembourg) S.A.R.L. Negative-working thick film photoresist
US9012126B2 (en) 2012-06-15 2015-04-21 Az Electronic Materials (Luxembourg) S.A.R.L. Positive photosensitive material
JP6209035B2 (ja) * 2013-09-25 2017-10-04 旭化成株式会社 感光性樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置の製造方法
US10775697B2 (en) * 2014-04-22 2020-09-15 Zeon Corporation Radiation-sensitive resin composition, resin film, and electronic device
CN106032369A (zh) * 2014-12-31 2016-10-19 浙江九洲药业股份有限公司 卤代s-(全氟烷基)-二苯并噻吩盐及其制备方法
TWI731961B (zh) 2016-04-19 2021-07-01 德商馬克專利公司 正向感光材料及形成正向凸紋影像之方法
KR102261808B1 (ko) 2016-08-09 2021-06-07 리지필드 액퀴지션 환경적으로 안정한 후막성 화학증폭형 레지스트
EP3761117A4 (en) * 2018-03-27 2021-05-12 Tokyo Ohka Kogyo Co., Ltd. METHOD OF MANUFACTURING A PLATED SHAPED BODY
EP3847506A1 (en) 2018-09-05 2021-07-14 Merck Patent GmbH Positive working photosensitive material
FR3120871B1 (fr) * 2021-03-17 2024-04-19 Bostik Sa Composition à base de monomères (méth)acrylate
WO2022195221A1 (fr) * 2021-03-17 2022-09-22 Bostik Sa Composition a base de monomeres (meth)acrylate
US20230236507A1 (en) * 2022-01-26 2023-07-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing semiconductor structure and photoresist composition

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US5162177A (en) * 1986-10-30 1992-11-10 Hydro-Quebec Ion conductive material composed of a salt in solution in a liquid electrolyte
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US5554664A (en) * 1995-03-06 1996-09-10 Minnesota Mining And Manufacturing Company Energy-activatable salts with fluorocarbon anions
JPH0954437A (ja) * 1995-06-05 1997-02-25 Fuji Photo Film Co Ltd 化学増幅型ポジレジスト組成物
JP3607432B2 (ja) * 1995-10-12 2005-01-05 株式会社東芝 感光性組成物
US5863699A (en) * 1995-10-12 1999-01-26 Kabushiki Kaisha Toshiba Photo-sensitive composition
US6280897B1 (en) * 1996-12-24 2001-08-28 Kabushiki Kaisha Toshiba Photosensitive composition, method for forming pattern using the same, and method for manufacturing electronic parts
JP3431481B2 (ja) * 1996-12-24 2003-07-28 株式会社東芝 感光性組成物、およびこれを用いたパターン形成方法ならびに電子部品の製造方法
EP0877293B1 (en) * 1997-05-09 2004-01-14 Fuji Photo Film Co., Ltd. Positive photosensitive composition
KR20040004429A (ko) * 2000-11-09 2004-01-13 이 아이 듀폰 디 네모아 앤드 캄파니 미세리쏘그래피용 포토레지스트 조성물의 광산 발생제
US6696216B2 (en) * 2001-06-29 2004-02-24 International Business Machines Corporation Thiophene-containing photo acid generators for photolithography

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100912848B1 (ko) * 2007-04-09 2009-08-18 도오꾜오까고오교 가부시끼가이샤 레지스트 조성물, 레지스트 패턴 형성 방법, 화합물 및산발생제

Also Published As

Publication number Publication date
WO2005003858A3 (en) 2005-04-21
JP2007506992A (ja) 2007-03-22
WO2005003858A2 (en) 2005-01-13
EP1642172A2 (en) 2006-04-05
US20040265733A1 (en) 2004-12-30
TW200516344A (en) 2005-05-16

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PA0105 International application

Patent event date: 20051215

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid