TW200509256A - Method for modifying insulating film - Google Patents

Method for modifying insulating film

Info

Publication number
TW200509256A
TW200509256A TW093115475A TW93115475A TW200509256A TW 200509256 A TW200509256 A TW 200509256A TW 093115475 A TW093115475 A TW 093115475A TW 93115475 A TW93115475 A TW 93115475A TW 200509256 A TW200509256 A TW 200509256A
Authority
TW
Taiwan
Prior art keywords
insulating film
modifying
provides
present
modifying insulating
Prior art date
Application number
TW093115475A
Other languages
English (en)
Chinese (zh)
Other versions
TWI354332B (OSRAM
Inventor
Takuya Sugawara
Yoshihide Tada
Genji Nakamura
Kazuhide Hasebe
Shigeru Nakajima
Tomonori Fujiwara
Shigenori Ozaki
Toshio Nakanishi
Masaru Sasaki
Seiji Matsuyama
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200509256A publication Critical patent/TW200509256A/zh
Application granted granted Critical
Publication of TWI354332B publication Critical patent/TWI354332B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01338—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/0134—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
    • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01346—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a gaseous ambient using an oxygen or a water vapour, e.g. oxidation through a layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69392—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing hafnium, e.g. HfO2

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Processing And Handling Of Plastics And Other Materials For Molding In General (AREA)
TW093115475A 2003-05-30 2004-05-28 Method for modifying insulating film TW200509256A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003154812A JP4408653B2 (ja) 2003-05-30 2003-05-30 基板処理方法および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200509256A true TW200509256A (en) 2005-03-01
TWI354332B TWI354332B (OSRAM) 2011-12-11

Family

ID=33487334

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093115475A TW200509256A (en) 2003-05-30 2004-05-28 Method for modifying insulating film

Country Status (6)

Country Link
US (2) US7655574B2 (OSRAM)
JP (1) JP4408653B2 (OSRAM)
KR (1) KR100887330B1 (OSRAM)
CN (1) CN1930668A (OSRAM)
TW (1) TW200509256A (OSRAM)
WO (1) WO2004107431A1 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
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TWI450338B (zh) * 2005-10-20 2014-08-21 應用材料股份有限公司 場效電晶體之閘極介電質的製造方法

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JP4256340B2 (ja) * 2002-05-16 2009-04-22 東京エレクトロン株式会社 基板処理方法
TW200511430A (en) * 2003-05-29 2005-03-16 Tokyo Electron Ltd Plasma processing apparatus and plasma processing method
TW200620471A (en) * 2004-08-31 2006-06-16 Tokyo Electron Ltd Silicon oxide film forming method, semiconductor device manufacturing method and computer storage medium
JP2006203120A (ja) * 2005-01-24 2006-08-03 Toshiba Corp 半導体装置の製造方法
JP2007081265A (ja) * 2005-09-16 2007-03-29 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7767515B2 (en) * 2006-02-27 2010-08-03 Synopsys, Inc. Managing integrated circuit stress using stress adjustment trenches
WO2007138937A1 (en) * 2006-05-26 2007-12-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7951693B2 (en) * 2006-12-22 2011-05-31 Philips Lumileds Lighting Company, Llc III-nitride light emitting devices grown on templates to reduce strain
US7691693B2 (en) * 2007-06-01 2010-04-06 Synopsys, Inc. Method for suppressing layout sensitivity of threshold voltage in a transistor array
US7895548B2 (en) * 2007-10-26 2011-02-22 Synopsys, Inc. Filler cells for design optimization in a place-and-route system
US20090108408A1 (en) * 2007-10-29 2009-04-30 Synopsys, Inc. Method for Trapping Implant Damage in a Semiconductor Substrate
US9472423B2 (en) * 2007-10-30 2016-10-18 Synopsys, Inc. Method for suppressing lattice defects in a semiconductor substrate
JP4611414B2 (ja) 2007-12-26 2011-01-12 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
US8810000B2 (en) 2008-01-22 2014-08-19 Renesas Electronics Corporation Semiconductor device comprising capacitive element
JP2011124240A (ja) * 2008-03-31 2011-06-23 Tokyo Electron Ltd Ｍｏｓ型半導体メモリ装置、その製造方法およびコンピュータ読み取り可能な記憶媒体
JP4636133B2 (ja) 2008-07-22 2011-02-23 東京エレクトロン株式会社 窒化チタン膜の改質方法及び改質装置
JP5166297B2 (ja) 2009-01-21 2013-03-21 東京エレクトロン株式会社 酸化珪素膜の形成方法、半導体メモリ装置の製造方法およびコンピュータ読み取り可能な記憶媒体
JP2014531770A (ja) 2011-09-30 2014-11-27 インテル・コーポレーション トランジスタゲート用のキャップ誘電体構造
CN106783971A (zh) 2011-09-30 2017-05-31 英特尔公司 用于非平坦晶体管的钨栅极
US9580776B2 (en) 2011-09-30 2017-02-28 Intel Corporation Tungsten gates for non-planar transistors
CN103918083A (zh) 2011-10-01 2014-07-09 英特尔公司 非平面晶体管的源极/漏极触点
DE112011105925B4 (de) 2011-12-06 2023-02-09 Tahoe Research, Ltd. Mikroelektronischer Transistor und Verfahren zum Herstellen desselben
US20140042152A1 (en) * 2012-08-08 2014-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Variable frequency microwave device and method for rectifying wafer warpage
US9412847B2 (en) * 2013-03-11 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned passivation of active regions
CN103730373B (zh) 2013-12-31 2016-09-07 京东方科技集团股份有限公司 一种半导体器件的制备方法及半导体器件
KR102263827B1 (ko) * 2014-03-21 2021-06-14 삼성디스플레이 주식회사 산화물 반도체 증착장치 및 이를 이용한 산화물 반도체의 제조 방법
CN105336628B (zh) * 2015-09-25 2018-10-19 武汉新芯集成电路制造有限公司 一种晶圆表面键合工艺及一种半导体器件结构
JP6597296B2 (ja) * 2015-12-25 2019-10-30 東京エレクトロン株式会社 基板処理方法
US10737575B2 (en) 2017-11-22 2020-08-11 Ford Global Technologies, Llc Power device parameter adjustment
KR20240111974A (ko) * 2023-01-11 2024-07-18 에스케이하이닉스 주식회사 셀렉터 및 이를 포함하는 반도체 장치의 제조 방법

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JP4454883B2 (ja) 2001-04-26 2010-04-21 東京エレクトロン株式会社 半導体装置の製造方法
TW557514B (en) 2001-08-02 2003-10-11 Tokyo Electron Ltd Method for processing a substrate and material for electronic devices
TWI225668B (en) * 2002-05-13 2004-12-21 Tokyo Electron Ltd Substrate processing method
JP4256340B2 (ja) 2002-05-16 2009-04-22 東京エレクトロン株式会社 基板処理方法
JP2004022902A (ja) * 2002-06-18 2004-01-22 Fujitsu Ltd 半導体装置の製造方法
JP2004079931A (ja) * 2002-08-22 2004-03-11 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2004153037A (ja) * 2002-10-31 2004-05-27 Renesas Technology Corp 半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI450338B (zh) * 2005-10-20 2014-08-21 應用材料股份有限公司 場效電晶體之閘極介電質的製造方法

Also Published As

Publication number Publication date
CN1930668A (zh) 2007-03-14
US20060199398A1 (en) 2006-09-07
JP4408653B2 (ja) 2010-02-03
TWI354332B (OSRAM) 2011-12-11
US20100105215A1 (en) 2010-04-29
KR100887330B1 (ko) 2009-03-06
JP2004356528A (ja) 2004-12-16
WO2004107431A1 (ja) 2004-12-09
US7655574B2 (en) 2010-02-02
KR20060006096A (ko) 2006-01-18
US8021987B2 (en) 2011-09-20

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