TW200504798A - Substrate, device, method of manufacturing device, method of manufacturing active-matrix substrate, electrooptical apparatus and electronic apparatus - Google Patents

Substrate, device, method of manufacturing device, method of manufacturing active-matrix substrate, electrooptical apparatus and electronic apparatus

Info

Publication number
TW200504798A
TW200504798A TW093112677A TW93112677A TW200504798A TW 200504798 A TW200504798 A TW 200504798A TW 093112677 A TW093112677 A TW 093112677A TW 93112677 A TW93112677 A TW 93112677A TW 200504798 A TW200504798 A TW 200504798A
Authority
TW
Taiwan
Prior art keywords
substrate
manufacturing
electronic apparatus
electrooptical
active
Prior art date
Application number
TW093112677A
Other languages
English (en)
Other versions
TWI239035B (en
Inventor
Toshimitsu Hirai
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of TW200504798A publication Critical patent/TW200504798A/zh
Application granted granted Critical
Publication of TWI239035B publication Critical patent/TWI239035B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/72—Treatment of water, waste water, or sewage by oxidation
    • C02F1/78—Treatment of water, waste water, or sewage by oxidation with ozone
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D35/00—Filtering devices having features not specifically covered by groups B01D24/00 - B01D33/00, or for applications not specifically covered by groups B01D24/00 - B01D33/00; Auxiliary devices for filtration; Filter housing constructions
    • B01D35/14—Safety devices specially adapted for filtration; Devices for indicating clogging
    • B01D35/157—Flow control valves: Damping or calibrated passages
    • B01D35/1576—Calibrated passages
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2201/00—Details relating to filtering apparatus
    • B01D2201/16—Valves
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/40—Coatings comprising at least one inhomogeneous layer
    • C03C2217/43—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
    • C03C2217/46—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase
    • C03C2217/47—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase consisting of a specific material
    • C03C2217/475—Inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/40—Coatings comprising at least one inhomogeneous layer
    • C03C2217/43—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase
    • C03C2217/46—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase
    • C03C2217/47—Coatings comprising at least one inhomogeneous layer consisting of a dispersed phase in a continuous phase characterized by the dispersed phase consisting of a specific material
    • C03C2217/475—Inorganic materials
    • C03C2217/479—Metals
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Environmental & Geological Engineering (AREA)
  • Water Supply & Treatment (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
TW093112677A 2003-05-09 2004-05-05 Substrate, device, method of manufacturing device, method of manufacturing active-matrix substrate, electrooptical apparatus and electronic apparatus TWI239035B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003131601 2003-05-09
JP2003131600 2003-05-09
JP2004115371A JP2004363560A (ja) 2003-05-09 2004-04-09 基板、デバイス、デバイス製造方法、アクティブマトリクス基板の製造方法及び電気光学装置並びに電子機器

Publications (2)

Publication Number Publication Date
TW200504798A true TW200504798A (en) 2005-02-01
TWI239035B TWI239035B (en) 2005-09-01

Family

ID=34068899

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093112677A TWI239035B (en) 2003-05-09 2004-05-05 Substrate, device, method of manufacturing device, method of manufacturing active-matrix substrate, electrooptical apparatus and electronic apparatus

Country Status (5)

Country Link
US (2) US20060035064A1 (zh)
JP (1) JP2004363560A (zh)
KR (1) KR100654197B1 (zh)
CN (1) CN1309567C (zh)
TW (1) TWI239035B (zh)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI413264B (zh) * 2005-09-27 2013-10-21 Semiconductor Energy Lab 膜形成裝置、形成膜之方法、及製造光電轉換裝置之方法
TWI594478B (zh) * 2014-01-21 2017-08-01 凱特伊夫公司 用於電子裝置膠封的設備與技術
US10512931B2 (en) 2014-01-21 2019-12-24 Kateeva, Inc. Apparatus and techniques for electronic device encapsulation
US10537911B2 (en) 2014-04-30 2020-01-21 Kateeva, Inc. Gas cushion apparatus and techniques for substrate coating
US11107712B2 (en) 2013-12-26 2021-08-31 Kateeva, Inc. Techniques for thermal treatment of electronic devices
TWI740074B (zh) * 2018-01-30 2021-09-21 日商住友重機械工業股份有限公司 膜形成方法、膜形成裝置及形成有膜之複合基板
US11633968B2 (en) 2008-06-13 2023-04-25 Kateeva, Inc. Low-particle gas enclosure systems and methods
US11975546B2 (en) 2008-06-13 2024-05-07 Kateeva, Inc. Gas enclosure assembly and system
US12018857B2 (en) 2008-06-13 2024-06-25 Kateeva, Inc. Gas enclosure assembly and system

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004351272A (ja) * 2003-05-27 2004-12-16 Seiko Epson Corp 薄膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器
JP3788467B2 (ja) * 2003-05-28 2006-06-21 セイコーエプソン株式会社 パターン形成方法、デバイス及びデバイスの製造方法、電気光学装置、電子機器並びにアクティブマトリクス基板の製造方法
JP4853607B2 (ja) * 2004-07-09 2012-01-11 セイコーエプソン株式会社 薄膜トランジスタの製造方法
TWI254027B (en) 2004-12-07 2006-05-01 Ind Tech Res Inst Micro device and manufacturing method thereof
KR100685804B1 (ko) * 2004-12-14 2007-02-22 삼성에스디아이 주식회사 유기전계발광소자 및 그의 제조방법
CN100359368C (zh) * 2004-12-29 2008-01-02 财团法人工业技术研究院 微元件及其制造方法
JP2006269599A (ja) * 2005-03-23 2006-10-05 Sony Corp パターン形成方法、有機電界効果型トランジスタの製造方法、及び、フレキシブルプリント回路板の製造方法
JP4239999B2 (ja) 2005-05-11 2009-03-18 セイコーエプソン株式会社 膜パターンの形成方法、膜パターン、デバイス、電気光学装置、及び電子機器
JP4254743B2 (ja) * 2005-05-13 2009-04-15 セイコーエプソン株式会社 薄膜トランジスタの製造方法
KR101209046B1 (ko) 2005-07-27 2012-12-06 삼성디스플레이 주식회사 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법
KR20070053060A (ko) 2005-11-19 2007-05-23 삼성전자주식회사 표시장치와 이의 제조방법
TWI338189B (en) * 2006-01-13 2011-03-01 Hon Hai Prec Ind Co Ltd Substrate structure and method of manufacturing thin film pattern layer using the same
KR101150142B1 (ko) * 2006-04-06 2012-06-11 어플라이드 머티어리얼스, 인코포레이티드 대형 기판 상에 아연 산화물 투명 전도성 산화물의 반응성 스퍼터링
WO2008131836A1 (en) * 2007-04-25 2008-11-06 Merck Patent Gmbh Process for preparing an electronic device
US7927713B2 (en) 2007-04-27 2011-04-19 Applied Materials, Inc. Thin film semiconductor material produced through reactive sputtering of zinc target using nitrogen gases
WO2009018509A1 (en) 2007-08-02 2009-02-05 Applied Materials, Inc. Thin film transistors using thin film semiconductor materials
GB0717054D0 (en) * 2007-09-01 2007-10-17 Eastman Kodak Co Patterning method
JP4692552B2 (ja) * 2008-01-25 2011-06-01 セイコーエプソン株式会社 液状体吐出装置および液状体吐出方法
US8980066B2 (en) * 2008-03-14 2015-03-17 Applied Materials, Inc. Thin film metal oxynitride semiconductors
US8143093B2 (en) * 2008-03-20 2012-03-27 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US8258511B2 (en) * 2008-07-02 2012-09-04 Applied Materials, Inc. Thin film transistors using multiple active channel layers
CN102640294B (zh) 2009-09-24 2014-12-17 应用材料公司 将湿式处理用于源极-漏极金属蚀刻从而制造金属氧化物或金属氮氧化物tft的方法
US8840763B2 (en) * 2009-09-28 2014-09-23 Applied Materials, Inc. Methods for stable process in a reactive sputtering process using zinc or doped zinc target
US20110318503A1 (en) * 2010-06-29 2011-12-29 Christian Adams Plasma enhanced materials deposition system
JP5685467B2 (ja) * 2010-09-16 2015-03-18 富士フイルム株式会社 パターン形成方法及びパターン形成装置
CN102881701B (zh) 2012-09-19 2015-01-07 北京京东方光电科技有限公司 一种tft平板x射线传感器及其制造方法
CN105320328B (zh) * 2014-07-25 2018-08-21 南京瀚宇彩欣科技有限责任公司 触控显示面板
CN108501532B (zh) * 2018-04-09 2020-02-14 京东方科技集团股份有限公司 喷墨打印头、打印机、打印机的喷嘴组件及其制作方法
DE102019106546A1 (de) * 2019-03-14 2020-09-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil
CN110707096A (zh) * 2019-09-18 2020-01-17 深圳市华星光电半导体显示技术有限公司 一种阵列基板及其制备方法、显示装置
KR20210149957A (ko) * 2020-06-02 2021-12-10 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
CN117019578B (zh) * 2023-10-10 2024-01-09 芯体素(杭州)科技发展有限公司 微透镜基板及其制备方法、涂胶装置

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3332515B2 (ja) * 1993-11-24 2002-10-07 キヤノン株式会社 カラーフィルタ、その製造方法及び液晶パネル
JPH09203803A (ja) * 1996-01-25 1997-08-05 Asahi Glass Co Ltd カラーフィルタの製造方法及びそれを用いた液晶表示素子
JPH09230129A (ja) 1996-02-26 1997-09-05 Asahi Glass Co Ltd カラーフィルタの製造方法及びそれを用いた液晶表示素子
TW449670B (en) 1996-05-15 2001-08-11 Seiko Epson Corp Method for making thin film device with coating film, liquid crystal panel and electronic device
JP3927654B2 (ja) * 1996-08-07 2007-06-13 キヤノン株式会社 カラーフィルタおよび液晶表示装置の製造方法
US5948577A (en) * 1997-06-02 1999-09-07 Canon Kabushiki Kaisha Color filter substrate, liquid crystal display device using the same and method of manufacturing color filter substrate
JP3911775B2 (ja) * 1997-07-30 2007-05-09 セイコーエプソン株式会社 有機ｅｌ素子の製造方法
CA2306384A1 (en) * 1997-10-14 1999-04-22 Patterning Technologies Limited Method of forming an electronic device
JP4003273B2 (ja) 1998-01-19 2007-11-07 セイコーエプソン株式会社 パターン形成方法および基板製造装置
EP1793650B1 (en) * 1998-03-17 2014-03-05 Seiko Epson Corporation Method for manufacturing a flat panel display
JP3646510B2 (ja) * 1998-03-18 2005-05-11 セイコーエプソン株式会社 薄膜形成方法、表示装置およびカラーフィルタ
JP4741045B2 (ja) 1998-03-25 2011-08-03 セイコーエプソン株式会社 電気回路、その製造方法および電気回路製造装置
JP4138130B2 (ja) 1999-02-04 2008-08-20 セイコーエプソン株式会社 カラーフィルターの製造方法および液晶表示装置の製造方法
US6630274B1 (en) * 1998-12-21 2003-10-07 Seiko Epson Corporation Color filter and manufacturing method therefor
JP2000216330A (ja) 1999-01-26 2000-08-04 Seiko Epson Corp 積層型半導体装置およびその製造方法
JP3527961B2 (ja) * 1999-04-30 2004-05-17 株式会社日立製作所 フロントライト型反射液晶表示装置
KR100687835B1 (ko) * 1999-06-30 2007-02-27 다이니폰 인사츠 가부시키가이샤 컬러 필터 및 그 제조 방법
US6288916B1 (en) * 1999-10-15 2001-09-11 Alpha Technologies, Inc. Multiple output uninterruptible alternating current power supplies for communications system
JP2001272527A (ja) * 2000-03-27 2001-10-05 Dainippon Printing Co Ltd カラーフィルタおよびその製造方法
US6677243B2 (en) * 2000-06-02 2004-01-13 Canon Kabushiki Kaisha Method of manufacturing optical element
JP4035968B2 (ja) * 2000-06-30 2008-01-23 セイコーエプソン株式会社 導電膜パターンの形成方法
JP3953776B2 (ja) * 2001-01-15 2007-08-08 セイコーエプソン株式会社 材料の吐出装置、及び吐出方法、カラーフィルタの製造装置及び製造方法、液晶装置の製造装置及び製造方法、ｅｌ装置の製造装置及び製造方法
JP2002273869A (ja) * 2001-01-15 2002-09-25 Seiko Epson Corp 吐出方法およびその装置、電気光学装置、その製造方法およびその製造装置、カラーフィルタ、その製造方法およびその製造装置、ならびに基材を有するデバイス、その製造方法およびその製造装置
WO2002059985A1 (en) 2001-01-24 2002-08-01 Koninklijke Philips Electronics N.V. Method of producing a track on a substrate
JP2003059940A (ja) * 2001-08-08 2003-02-28 Fuji Photo Film Co Ltd ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法
JP2003058077A (ja) * 2001-08-08 2003-02-28 Fuji Photo Film Co Ltd ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法
JP2003124210A (ja) * 2001-10-15 2003-04-25 Seiko Epson Corp 表面処理方法、半導体デバイス、電気回路、表示体モジュール、カラーフィルタおよび発光素子
JP2003124215A (ja) * 2001-10-15 2003-04-25 Seiko Epson Corp パターン形成方法、半導体デバイス、電気回路、表示体モジュール、カラーフィルタおよび発光素子
JP2003133691A (ja) * 2001-10-22 2003-05-09 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体
JP2003207899A (ja) * 2002-01-17 2003-07-25 Fuji Photo Film Co Ltd 平版印刷原版
JP3578162B2 (ja) * 2002-04-16 2004-10-20 セイコーエプソン株式会社 パターンの形成方法、パターン形成装置、導電膜配線、デバイスの製造方法、電気光学装置、並びに電子機器
JP2004006313A (ja) * 2002-04-18 2004-01-08 Seiko Epson Corp 電気光学装置の製造方法、電気光学装置、および電子機器
US7061570B2 (en) * 2003-03-26 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP4123172B2 (ja) * 2003-04-01 2008-07-23 セイコーエプソン株式会社 薄膜パターンの形成方法及びデバイスの製造方法、電気光学装置及び電子機器
JP4293035B2 (ja) * 2003-05-07 2009-07-08 セイコーエプソン株式会社 撥液膜被覆部材、液体噴出装置の構成部材、液体噴出ヘッドのノズルプレート、液体噴出ヘッドおよび液体噴出装置
KR100671813B1 (ko) * 2004-10-15 2007-01-19 세이코 엡슨 가부시키가이샤 박막 패턴 형성 방법, 반도체 장치, 전기 광학 장치, 및전자 기기
JP4677937B2 (ja) * 2005-07-20 2011-04-27 セイコーエプソン株式会社 膜パターンの形成方法、デバイス、電気光学装置、電子機器、及びアクティブマトリクス基板の製造方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI413264B (zh) * 2005-09-27 2013-10-21 Semiconductor Energy Lab 膜形成裝置、形成膜之方法、及製造光電轉換裝置之方法
US11633968B2 (en) 2008-06-13 2023-04-25 Kateeva, Inc. Low-particle gas enclosure systems and methods
US11975546B2 (en) 2008-06-13 2024-05-07 Kateeva, Inc. Gas enclosure assembly and system
US12018857B2 (en) 2008-06-13 2024-06-25 Kateeva, Inc. Gas enclosure assembly and system
US11107712B2 (en) 2013-12-26 2021-08-31 Kateeva, Inc. Techniques for thermal treatment of electronic devices
TWI594478B (zh) * 2014-01-21 2017-08-01 凱特伊夫公司 用於電子裝置膠封的設備與技術
US10512931B2 (en) 2014-01-21 2019-12-24 Kateeva, Inc. Apparatus and techniques for electronic device encapsulation
US11489119B2 (en) 2014-01-21 2022-11-01 Kateeva, Inc. Apparatus and techniques for electronic device encapsulation
US10537911B2 (en) 2014-04-30 2020-01-21 Kateeva, Inc. Gas cushion apparatus and techniques for substrate coating
US11338319B2 (en) 2014-04-30 2022-05-24 Kateeva, Inc. Gas cushion apparatus and techniques for substrate coating
TWI740074B (zh) * 2018-01-30 2021-09-21 日商住友重機械工業股份有限公司 膜形成方法、膜形成裝置及形成有膜之複合基板

Also Published As

Publication number Publication date
CN1550334A (zh) 2004-12-01
US20060035064A1 (en) 2006-02-16
US20080132009A1 (en) 2008-06-05
KR100654197B1 (ko) 2006-12-06
US7678697B2 (en) 2010-03-16
TWI239035B (en) 2005-09-01
KR20040095654A (ko) 2004-11-15
JP2004363560A (ja) 2004-12-24
CN1309567C (zh) 2007-04-11

Similar Documents

Publication Publication Date Title
TW200504798A (en) Substrate, device, method of manufacturing device, method of manufacturing active-matrix substrate, electrooptical apparatus and electronic apparatus
TWI263465B (en) Pattern formation method and pattern formation apparatus, method for manufacturing device, electro-optical device, electronic device, and method for manufacturing active matrix substrate
TW200501214A (en) Film pattern formation method, device and method for manufacturing the same, electro-optical device, electronic device, and method for manufacturing active matrix substrate
DE60235906D1 (de) Erfahren
TW200501849A (en) Method of forming thin film pattern, method of manufacturing device, electrooptical apparatus and electronic apparatus
WO1999048339A8 (fr) Substrat de formation de motifs sur film mince et son traitement de surface
ATE338586T1 (de) Variable vorrichtung zum elektrostatischen beschichten und verfahren
DE60332218D1 (de) Vorrichtung zum prägen und beschichten mit klebstoff
EP0855614A4 (en) THIN FILM COMPONENT HAVING A COATING LAYER, LIQUID CRYSTAL PANEL, ELECTRONIC APPARATUS AND METHOD FOR MANUFACTURING THE THIN FILM COMPONENT
WO2009029863A8 (en) Methods of treating a surface to promote metal plating and devices formed
WO2008048928A3 (en) Methods of patterning a material on polymeric substrates
HK1047599B (zh) 疏水材料
TW200510854A (en) Method for forming film, method for forming wiring pattern, method for manufacturing semiconductor device, electro-optical device, and electronic devic
WO2008042079A3 (en) Method to form a pattern of functional material on a substrate
WO2009001935A1 (ja) 薄膜形成方法、有機エレクトロルミネッセンス素子の製造方法、半導体素子の製造方法及び光学素子の製造方法
TW200640318A (en) Method of forming film pattern, method of manufacturing device, electro-optical device, and electronic apparatus
TW200621381A (en) Thin film pattern substrate, method for manufacturing device, electro-optic device, and electronic apparatus
WO2006033852A3 (en) Structured surface using ablatable radiation sensitive material
TW200629430A (en) Wiring pattern forming method, film pattern forming method, semiconductor device, electro-optical device, and electronic equipment
TW200709942A (en) Method for forming film pattern, and method for manufacturing device, electro-optical device, electronic apparatus and active matrix substrate
WO2003069400A1 (fr) Couche d'alignement, procede de production de couche d'alignement, substrat comportant une couche d'alignement et affichage a cristaux liquides
TW200607418A (en) Method of manufacturing circuit device, method of manufacturing electronic device, and circuit board, electronic apparatus, and photoelectric device
WO2002085537A3 (en) Spin coating process
WO2006125089A3 (en) Mask and method for electrokinetic deposition and patterning process on substrates
DE502004006837D1 (de) Verfahren zum Beschichten von Substraten in Inline-Anlagen