TW200501430A - Semiconductor device and method of manufacturing such a device - Google Patents

Semiconductor device and method of manufacturing such a device

Info

Publication number
TW200501430A
TW200501430A TW093103489A TW93103489A TW200501430A TW 200501430 A TW200501430 A TW 200501430A TW 093103489 A TW093103489 A TW 093103489A TW 93103489 A TW93103489 A TW 93103489A TW 200501430 A TW200501430 A TW 200501430A
Authority
TW
Taiwan
Prior art keywords
diode
regions
tvsd
semiconductor region
punchthrough
Prior art date
Application number
TW093103489A
Other languages
English (en)
Inventor
Dalen Rob Van
Gerrit Elbert Johannes Koops
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200501430A publication Critical patent/TW200501430A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
TW093103489A 2003-02-18 2004-02-13 Semiconductor device and method of manufacturing such a device TW200501430A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03100367 2003-02-18

Publications (1)

Publication Number Publication Date
TW200501430A true TW200501430A (en) 2005-01-01

Family

ID=32892944

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093103489A TW200501430A (en) 2003-02-18 2004-02-13 Semiconductor device and method of manufacturing such a device

Country Status (9)

Country Link
US (2) US7482669B2 (zh)
EP (1) EP1597772B1 (zh)
JP (1) JP2006518107A (zh)
KR (1) KR20050095787A (zh)
CN (1) CN100477284C (zh)
AT (1) ATE418793T1 (zh)
DE (1) DE602004018614D1 (zh)
TW (1) TW200501430A (zh)
WO (1) WO2004075303A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI689076B (zh) * 2017-03-31 2020-03-21 大陸商萬民半導體（澳門）有限公司 高突波雙向暫態電壓抑制器

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004075303A1 (en) * 2003-02-18 2004-09-02 Koninklijke Philips Electronics N.V. Semiconductor device and method of manufacturing such a device
CN101160666A (zh) * 2005-03-22 2008-04-09 考克大学-爱尔兰国立大学，考克 二极管结构
US20070077738A1 (en) * 2005-10-03 2007-04-05 Aram Tanielian Fabrication of small scale matched bi-polar TVS devices having reduced parasitic losses
CN102117839B (zh) * 2010-01-05 2013-07-24 比亚迪股份有限公司 一种包含pn结的半导体电子器件
US9105682B2 (en) * 2011-02-28 2015-08-11 Infineon Technologies Austria Ag Semiconductor component with improved dynamic behavior
US8987858B2 (en) 2013-03-18 2015-03-24 General Electric Company Method and system for transient voltage suppression
CN104022147B (zh) * 2014-06-09 2017-05-24 苏州市职业大学 一种瞬态电压抑制半导体器件
DE102018113573B4 (de) * 2018-06-07 2022-11-03 Semikron Elektronik Gmbh & Co. Kg Patentabteilung Diode mit einem Halbleiterkörper
GB2586599A (en) * 2019-08-27 2021-03-03 Mqsemi Ag Electrically shorted PN junctions and functional semiconductor designs for the same

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US4356503A (en) * 1978-06-14 1982-10-26 General Electric Company Latching transistor
JPS6011815B2 (ja) * 1979-07-09 1985-03-28 三菱電機株式会社 サイリスタ
JPS5691478A (en) * 1979-12-26 1981-07-24 Hitachi Ltd Manufacture of punch-through type diode
JPS5773956A (en) * 1980-10-27 1982-05-08 Hitachi Ltd Glass coated semiconductor device
US4782379A (en) * 1981-11-23 1988-11-01 General Electric Company Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
JPS60142559A (ja) * 1983-12-29 1985-07-27 Fujitsu Ltd プログラマブル・リ−ド・オンリ・メモリ
JPS6384066A (ja) * 1986-09-26 1988-04-14 Semiconductor Res Found 集積化光トリガ・光クエンチ静電誘導サイリスタ及びその製造方法
DE3750743T2 (de) * 1986-12-01 1995-03-16 Toshiba Kawasaki Kk Halbleiter-Schaltanordnung mit einer Anodenkurzschlussstruktur.
US4821095A (en) * 1987-03-12 1989-04-11 General Electric Company Insulated gate semiconductor device with extra short grid and method of fabrication
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US4967256A (en) * 1988-07-08 1990-10-30 Texas Instruments Incorporated Overvoltage protector
EP0450082B1 (en) * 1989-08-31 2004-04-28 Denso Corporation Insulated gate bipolar transistor
JP3321185B2 (ja) * 1990-09-28 2002-09-03 株式会社東芝 高耐圧半導体装置
JP3081739B2 (ja) * 1992-10-20 2000-08-28 三菱電機株式会社 絶縁ゲート型半導体装置及びその製造方法
DE69315813T2 (de) * 1992-12-28 1998-06-10 Koninkl Philips Electronics Nv Kaskodenschaltungsstruktur mit bipolaren Epitoxial-Transistoren und niedrig gelegenem Basisanschluss
US5479031A (en) * 1993-09-10 1995-12-26 Teccor Electronics, Inc. Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value
JP3240827B2 (ja) * 1994-05-19 2001-12-25 日産自動車株式会社 ダイオード
US5969400A (en) * 1995-03-15 1999-10-19 Kabushiki Kaisha Toshiba High withstand voltage semiconductor device
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WO2000062346A1 (en) * 1999-04-08 2000-10-19 Koninklijke Philips Electronics N.V. Punchthrough diode and method of manufacturing the same
ATE393478T1 (de) * 2000-02-15 2008-05-15 Nxp Bv Durchbruchsdiode und verfahren zur herstellung
JP3636345B2 (ja) * 2000-03-17 2005-04-06 富士電機デバイステクノロジー株式会社 半導体素子および半導体素子の製造方法
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI689076B (zh) * 2017-03-31 2020-03-21 大陸商萬民半導體（澳門）有限公司 高突波雙向暫態電壓抑制器

Also Published As

Publication number Publication date
EP1597772A1 (en) 2005-11-23
US20090026500A1 (en) 2009-01-29
KR20050095787A (ko) 2005-09-30
EP1597772B1 (en) 2008-12-24
US20060145191A1 (en) 2006-07-06
WO2004075303A1 (en) 2004-09-02
CN1751396A (zh) 2006-03-22
US7728404B2 (en) 2010-06-01
US7482669B2 (en) 2009-01-27
ATE418793T1 (de) 2009-01-15
CN100477284C (zh) 2009-04-08
DE602004018614D1 (de) 2009-02-05
JP2006518107A (ja) 2006-08-03

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