ATE393478T1 - Durchbruchsdiode und verfahren zur herstellung - Google Patents
Durchbruchsdiode und verfahren zur herstellungInfo
- Publication number
- ATE393478T1 ATE393478T1 AT01911525T AT01911525T ATE393478T1 AT E393478 T1 ATE393478 T1 AT E393478T1 AT 01911525 T AT01911525 T AT 01911525T AT 01911525 T AT01911525 T AT 01911525T AT E393478 T1 ATE393478 T1 AT E393478T1
- Authority
- AT
- Austria
- Prior art keywords
- diode
- region
- tvsd
- substrate
- punch
- Prior art date
Links
- 230000015556 catabolic process Effects 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 230000001629 suppression Effects 0.000 abstract 1
- 230000001052 transient effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8618—Diodes with bulk potential barrier, e.g. Camel diodes, Planar Doped Barrier diodes, Graded bandgap diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00200510 | 2000-02-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE393478T1 true ATE393478T1 (de) | 2008-05-15 |
Family
ID=8171017
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01911525T ATE393478T1 (de) | 2000-02-15 | 2001-01-24 | Durchbruchsdiode und verfahren zur herstellung |
Country Status (6)
Country | Link |
---|---|
US (1) | US6597052B2 (de) |
EP (1) | EP1200994B1 (de) |
JP (1) | JP2003523634A (de) |
AT (1) | ATE393478T1 (de) |
DE (1) | DE60133707T2 (de) |
WO (1) | WO2001061762A2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7482669B2 (en) * | 2003-02-18 | 2009-01-27 | Nxp B.V. | Semiconductor device and method of manufacturing such a device |
US7244970B2 (en) | 2004-12-22 | 2007-07-17 | Tyco Electronics Corporation | Low capacitance two-terminal barrier controlled TVS diodes |
US20060216913A1 (en) * | 2005-03-25 | 2006-09-28 | Pu-Ju Kung | Asymmetric bidirectional transient voltage suppressor and method of forming same |
DE102005047000A1 (de) * | 2005-09-30 | 2007-04-12 | Infineon Technologies Ag | Halbleiterstruktur zur Ableitung eines Überspannungsimpulses und Verfahren zur Herstellung desselben |
US8288839B2 (en) * | 2009-04-30 | 2012-10-16 | Alpha & Omega Semiconductor, Inc. | Transient voltage suppressor having symmetrical breakdown voltages |
US8384126B2 (en) | 2010-06-22 | 2013-02-26 | Littelfuse, Inc. | Low voltage PNPN protection device |
US8557654B2 (en) | 2010-12-13 | 2013-10-15 | Sandisk 3D Llc | Punch-through diode |
CN102097492A (zh) * | 2010-12-24 | 2011-06-15 | 中山大学 | 异质结构场效应二极管及制造方法 |
US8730629B2 (en) | 2011-12-22 | 2014-05-20 | General Electric Company | Variable breakdown transient voltage suppressor |
JP6107430B2 (ja) * | 2012-06-08 | 2017-04-05 | 豊田合成株式会社 | 半導体装置 |
WO2016159962A1 (en) * | 2015-03-31 | 2016-10-06 | Vishay General Semiconductor Llc | Thin bi-directional transient voltage suppressor (tvs) or zener diode |
JP6455335B2 (ja) | 2015-06-23 | 2019-01-23 | 三菱電機株式会社 | 半導体装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5880511A (en) * | 1995-06-30 | 1999-03-09 | Semtech Corporation | Low-voltage punch-through transient suppressor employing a dual-base structure |
EP1090428B1 (de) * | 1999-04-08 | 2006-08-16 | Philips Electronics N.V. | Durchbruchsdiode und verfahren zur herstellung |
-
2001
- 2001-01-24 DE DE60133707T patent/DE60133707T2/de not_active Expired - Lifetime
- 2001-01-24 JP JP2001560455A patent/JP2003523634A/ja not_active Withdrawn
- 2001-01-24 EP EP01911525A patent/EP1200994B1/de not_active Expired - Lifetime
- 2001-01-24 AT AT01911525T patent/ATE393478T1/de not_active IP Right Cessation
- 2001-01-24 WO PCT/EP2001/000773 patent/WO2001061762A2/en active IP Right Grant
- 2001-02-13 US US09/782,663 patent/US6597052B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1200994A2 (de) | 2002-05-02 |
WO2001061762A3 (en) | 2002-02-21 |
US20010017389A1 (en) | 2001-08-30 |
DE60133707T2 (de) | 2008-08-28 |
US6597052B2 (en) | 2003-07-22 |
WO2001061762A2 (en) | 2001-08-23 |
DE60133707D1 (de) | 2008-06-05 |
EP1200994B1 (de) | 2008-04-23 |
JP2003523634A (ja) | 2003-08-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |