CN1092557A - 一种介质隔离半导体器件及其制造方法 - Google Patents
一种介质隔离半导体器件及其制造方法 Download PDFInfo
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- CN1092557A CN1092557A CN94100576A CN94100576A CN1092557A CN 1092557 A CN1092557 A CN 1092557A CN 94100576 A CN94100576 A CN 94100576A CN 94100576 A CN94100576 A CN 94100576A CN 1092557 A CN1092557 A CN 1092557A
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/05—Etch and refill
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9300211 | 1993-01-25 | ||
SE9300211A SE500815C2 (sv) | 1993-01-25 | 1993-01-25 | Dielektriskt isolerad halvledaranordning och förfarande för dess framställning |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1092557A true CN1092557A (zh) | 1994-09-21 |
CN1036740C CN1036740C (zh) | 1997-12-17 |
Family
ID=20388647
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN94100576A Expired - Lifetime CN1036740C (zh) | 1993-01-25 | 1994-01-25 | 一种介质隔离半导体器件及其制造方法 |
Country Status (9)
Country | Link |
---|---|
US (2) | US5432377A (zh) |
EP (1) | EP0623949B1 (zh) |
JP (1) | JP3686097B2 (zh) |
KR (1) | KR100307304B1 (zh) |
CN (1) | CN1036740C (zh) |
DE (1) | DE69414169T2 (zh) |
MY (1) | MY110382A (zh) |
SE (1) | SE500815C2 (zh) |
SG (2) | SG54996A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100379029C (zh) * | 2002-03-15 | 2008-04-02 | 住友电气工业株式会社 | 横型接合型场效应晶体管及其制造方法 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997023901A1 (en) * | 1995-12-21 | 1997-07-03 | Philips Electronics N.V. | Method of manufacturing a resurf semiconductor device, and a semiconductor device manufactured by such a method |
WO1997035344A1 (en) | 1996-03-22 | 1997-09-25 | Telefonaktiebolaget Lm Ericsson | Semiconductor device shielded by an array of electrically conducting pins and a method to manufacture such a device |
GB2344302B (en) * | 1997-09-01 | 2002-11-06 | United Microelectronics Corp | Chemical-mechanical polishing machine and retainer ring thereof |
US5973341A (en) * | 1998-12-14 | 1999-10-26 | Philips Electronics North America Corporation | Lateral thin-film silicon-on-insulator (SOI) JFET device |
FR2818013B1 (fr) * | 2000-12-13 | 2003-10-17 | St Microelectronics Sa | Transistor a effet de champ a jonction destine a former un limiteur de courant |
US7189608B2 (en) * | 2003-12-22 | 2007-03-13 | Semiconductor Components Industries, L.L.C. | Semiconductor device having reduced gate charge and reduced on resistance and method |
US7288800B2 (en) | 2005-01-07 | 2007-10-30 | Texas Instruments Incorporated | Versatile system for cross-lateral junction field effect transistor |
JP4857610B2 (ja) * | 2005-06-01 | 2012-01-18 | 株式会社日立製作所 | 高圧アナログ・スイッチicおよびそれを使った超音波診断装置 |
US7772619B2 (en) | 2007-05-03 | 2010-08-10 | Suvolta, Inc. | Semiconductor device having a fin structure and fabrication method thereof |
CN103390646B (zh) * | 2012-05-09 | 2016-06-08 | 旺宏电子股份有限公司 | 半导体元件及其制造方法 |
CN105609544B (zh) | 2015-12-22 | 2019-05-03 | 杭州士兰微电子股份有限公司 | 绝缘隔离半导体器件及其制造方法 |
US11322545B2 (en) | 2018-04-27 | 2022-05-03 | Hewlett Packard Enterprise Development Lp | Vertical JFET device for memristor array interface |
Family Cites Families (16)
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DE2728532A1 (de) * | 1977-06-24 | 1979-01-11 | Siemens Ag | Sperrschicht-feldeffekttransistor |
US4587545A (en) * | 1978-12-20 | 1986-05-06 | At&T Bell Laboratories | High voltage dielectrically isolated remote gate solid-state switch |
US4608590A (en) * | 1978-12-20 | 1986-08-26 | At&T Bell Laboratories | High voltage dielectrically isolated solid-state switch |
JPS6016753B2 (ja) * | 1979-01-19 | 1985-04-27 | 株式会社日立製作所 | 半導体スイツチング素子およびその制御方法 |
US4587656A (en) * | 1979-12-28 | 1986-05-06 | At&T Bell Laboratories | High voltage solid-state switch |
NL186665C (nl) * | 1980-03-10 | 1992-01-16 | Philips Nv | Halfgeleiderinrichting. |
NL187415C (nl) * | 1980-09-08 | 1991-09-16 | Philips Nv | Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. |
US4485392A (en) * | 1981-12-28 | 1984-11-27 | North American Philips Corporation | Lateral junction field effect transistor device |
NL8200464A (nl) * | 1982-02-08 | 1983-09-01 | Philips Nv | Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte. |
US4729008A (en) * | 1982-12-08 | 1988-03-01 | Harris Corporation | High voltage IC bipolar transistors operable to BVCBO and method of fabrication |
US4691220A (en) * | 1983-10-07 | 1987-09-01 | American Telephone And Telegraph Company, At&T Bell Laboratories | Radial high voltage bidirectional switch structure with concavo-concave shaped semiconductor regions |
US4639761A (en) * | 1983-12-16 | 1987-01-27 | North American Philips Corporation | Combined bipolar-field effect transistor resurf devices |
US4605948A (en) * | 1984-08-02 | 1986-08-12 | Rca Corporation | Semiconductor structure for electric field distribution |
US5001075A (en) * | 1989-04-03 | 1991-03-19 | Motorola | Fabrication of dielectrically isolated semiconductor device |
JP2825322B2 (ja) * | 1989-09-13 | 1998-11-18 | 株式会社東芝 | 誘電体分離構造を有する半導体基板の製造方法 |
JP2739018B2 (ja) * | 1992-10-21 | 1998-04-08 | 三菱電機株式会社 | 誘電体分離半導体装置及びその製造方法 |
-
1993
- 1993-01-25 SE SE9300211A patent/SE500815C2/sv not_active IP Right Cessation
-
1994
- 1994-01-12 DE DE69414169T patent/DE69414169T2/de not_active Expired - Lifetime
- 1994-01-12 EP EP94850005A patent/EP0623949B1/en not_active Expired - Lifetime
- 1994-01-12 SG SG1996000764A patent/SG54996A1/en unknown
- 1994-01-12 SG SG1996000621A patent/SG49599A1/en unknown
- 1994-01-14 MY MYPI94000096A patent/MY110382A/en unknown
- 1994-01-24 US US08/185,146 patent/US5432377A/en not_active Expired - Lifetime
- 1994-01-24 JP JP00589594A patent/JP3686097B2/ja not_active Expired - Lifetime
- 1994-01-25 CN CN94100576A patent/CN1036740C/zh not_active Expired - Lifetime
- 1994-01-25 KR KR1019940001283A patent/KR100307304B1/ko not_active IP Right Cessation
-
1995
- 1995-05-19 US US08/444,512 patent/US5741723A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100379029C (zh) * | 2002-03-15 | 2008-04-02 | 住友电气工业株式会社 | 横型接合型场效应晶体管及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100307304B1 (ko) | 2002-06-20 |
SE9300211D0 (sv) | 1993-01-25 |
KR940019000A (ko) | 1994-08-19 |
SG49599A1 (en) | 1998-06-15 |
DE69414169T2 (de) | 1999-03-18 |
MY110382A (en) | 1998-04-30 |
EP0623949A1 (en) | 1994-11-09 |
EP0623949B1 (en) | 1998-10-28 |
SG54996A1 (en) | 1998-12-21 |
JP3686097B2 (ja) | 2005-08-24 |
CN1036740C (zh) | 1997-12-17 |
JPH06260506A (ja) | 1994-09-16 |
SE500815C2 (sv) | 1994-09-12 |
DE69414169D1 (de) | 1998-12-03 |
SE9300211L (sv) | 1994-07-26 |
US5432377A (en) | 1995-07-11 |
US5741723A (en) | 1998-04-21 |
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