TW200305944A - Plasma etching method - Google Patents

Plasma etching method Download PDF

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Publication number
TW200305944A
TW200305944A TW092105357A TW92105357A TW200305944A TW 200305944 A TW200305944 A TW 200305944A TW 092105357 A TW092105357 A TW 092105357A TW 92105357 A TW92105357 A TW 92105357A TW 200305944 A TW200305944 A TW 200305944A
Authority
TW
Taiwan
Prior art keywords
plasma
film
gas
plasma etching
etching
Prior art date
Application number
TW092105357A
Other languages
English (en)
Chinese (zh)
Other versions
TWI293480B (ja
Inventor
Noriyuki Kobayashi
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200305944A publication Critical patent/TW200305944A/zh
Application granted granted Critical
Publication of TWI293480B publication Critical patent/TWI293480B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
TW092105357A 2002-03-25 2003-03-12 Plasma etching method TW200305944A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002082716A JP4176365B2 (ja) 2002-03-25 2002-03-25 プラズマエッチング方法

Publications (2)

Publication Number Publication Date
TW200305944A true TW200305944A (en) 2003-11-01
TWI293480B TWI293480B (ja) 2008-02-11

Family

ID=28449155

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092105357A TW200305944A (en) 2002-03-25 2003-03-12 Plasma etching method

Country Status (5)

Country Link
US (1) US20050161435A1 (ja)
JP (1) JP4176365B2 (ja)
CN (1) CN100367469C (ja)
TW (1) TW200305944A (ja)
WO (1) WO2003081655A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI750268B (zh) * 2016-11-30 2021-12-21 日商東京威力科創股份有限公司 電漿蝕刻方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8129282B2 (en) * 2006-07-19 2012-03-06 Tokyo Electron Limited Plasma etching method and computer-readable storage medium
JP4948278B2 (ja) * 2006-08-30 2012-06-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5982223B2 (ja) * 2012-08-27 2016-08-31 東京エレクトロン株式会社 プラズマ処理方法、及びプラズマ処理装置
JP2014220387A (ja) * 2013-05-08 2014-11-20 東京エレクトロン株式会社 プラズマエッチング方法
JP6284786B2 (ja) 2014-02-27 2018-02-28 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法
KR102224847B1 (ko) 2014-10-10 2021-03-08 삼성전자주식회사 반도체 소자의 제조방법
JP6529357B2 (ja) * 2015-06-23 2019-06-12 東京エレクトロン株式会社 エッチング方法
CN106356297B (zh) * 2015-07-16 2019-02-22 中微半导体设备(上海)有限公司 一种氮化钽TaN薄膜的刻蚀方法
US10854430B2 (en) 2016-11-30 2020-12-01 Tokyo Electron Limited Plasma etching method
JP6833657B2 (ja) 2017-11-07 2021-02-24 東京エレクトロン株式会社 基板をプラズマエッチングする方法
JP7195113B2 (ja) * 2018-11-07 2022-12-23 東京エレクトロン株式会社 処理方法及び基板処理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5300460A (en) * 1989-10-03 1994-04-05 Applied Materials, Inc. UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers
US5468339A (en) * 1992-10-09 1995-11-21 Advanced Micro Devices, Inc. Plasma etch process
US5700740A (en) * 1996-03-25 1997-12-23 Taiwan Semiconductor Manufacturing Company Ltd Prevention of corrosion of aluminum interconnects by removing corrosion-inducing species
US5942446A (en) * 1997-09-12 1999-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Fluorocarbon polymer layer deposition predominant pre-etch plasma etch method for forming patterned silicon containing dielectric layer
JPH11340321A (ja) * 1998-05-27 1999-12-10 Sony Corp 半導体装置およびその製造方法
US6007733A (en) * 1998-05-29 1999-12-28 Taiwan Semiconductor Manufacturing Company Hard masking method for forming oxygen containing plasma etchable layer
US6319822B1 (en) * 1998-10-01 2001-11-20 Taiwan Semiconductor Manufacturing Company Process for forming an integrated contact or via
JP2000150463A (ja) * 1998-11-16 2000-05-30 Canon Inc 有機層間絶縁膜のエッチング処理方法
JP2001007202A (ja) * 1999-06-22 2001-01-12 Sony Corp 半導体装置の製造方法
JP4173307B2 (ja) * 1999-06-24 2008-10-29 株式会社ルネサステクノロジ 半導体集積回路の製造方法
JP2003514388A (ja) * 1999-11-15 2003-04-15 ラム リサーチ コーポレーション 処理システム用の材料およびガス化学剤
JP3400770B2 (ja) * 1999-11-16 2003-04-28 松下電器産業株式会社 エッチング方法、半導体装置及びその製造方法
JP2001274264A (ja) * 2000-03-24 2001-10-05 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6410424B1 (en) * 2001-04-19 2002-06-25 Taiwan Semiconductor Manufacturing Company Process flow to optimize profile of ultra small size photo resist free contact

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI750268B (zh) * 2016-11-30 2021-12-21 日商東京威力科創股份有限公司 電漿蝕刻方法

Also Published As

Publication number Publication date
TWI293480B (ja) 2008-02-11
JP4176365B2 (ja) 2008-11-05
CN100367469C (zh) 2008-02-06
US20050161435A1 (en) 2005-07-28
WO2003081655A1 (fr) 2003-10-02
JP2003282539A (ja) 2003-10-03
CN1643665A (zh) 2005-07-20

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees