TW200304582A - Negative deep ultraviolet photoresist - Google Patents
Negative deep ultraviolet photoresist Download PDFInfo
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- TW200304582A TW200304582A TW091134308A TW91134308A TW200304582A TW 200304582 A TW200304582 A TW 200304582A TW 091134308 A TW091134308 A TW 091134308A TW 91134308 A TW91134308 A TW 91134308A TW 200304582 A TW200304582 A TW 200304582A
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- Prior art keywords
- photoresist
- patent application
- photoresist composition
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 86
- 239000000203 mixture Substances 0.000 claims abstract description 37
- 239000003431 cross linking reagent Substances 0.000 claims abstract description 11
- 239000012670 alkaline solution Substances 0.000 claims abstract description 5
- 229920000642 polymer Polymers 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 28
- 239000011248 coating agent Substances 0.000 claims description 24
- 238000000576 coating method Methods 0.000 claims description 24
- -1 2-trifluoromethyl-1,1,1-trifluoro-2-hydroxypropyl Chemical group 0.000 claims description 21
- 238000003384 imaging method Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 3
- 239000004094 surface-active agent Substances 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 claims description 2
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 claims description 2
- 238000012360 testing method Methods 0.000 claims description 2
- BJAARRARQJZURR-UHFFFAOYSA-N trimethylazanium;hydroxide Chemical compound O.CN(C)C BJAARRARQJZURR-UHFFFAOYSA-N 0.000 claims description 2
- GLEXFKSLNFMHOA-UHFFFAOYSA-N triphenylazanium hydroxide Chemical compound [OH-].C1(=CC=CC=C1)[NH+](C1=CC=CC=C1)C1=CC=CC=C1 GLEXFKSLNFMHOA-UHFFFAOYSA-N 0.000 claims description 2
- DTNMLFOXJUUMQV-UHFFFAOYSA-N 1-ethyl-9h-fluorene Chemical compound C1C2=CC=CC=C2C2=C1C(CC)=CC=C2 DTNMLFOXJUUMQV-UHFFFAOYSA-N 0.000 claims 1
- QPPRZUXXQFFTDL-UHFFFAOYSA-N 1-tert-butyl-2-(2-tert-butylphenyl)sulfanylbenzene Chemical compound CC(C)(C)C1=CC=CC=C1SC1=CC=CC=C1C(C)(C)C QPPRZUXXQFFTDL-UHFFFAOYSA-N 0.000 claims 1
- YMTCDSQBRGXFML-UHFFFAOYSA-N 2-tert-butylbenzenesulfonic acid Chemical compound CC(C)(C)C1=CC=CC=C1S(O)(=O)=O YMTCDSQBRGXFML-UHFFFAOYSA-N 0.000 claims 1
- NGLOXYOGEMWSOD-UHFFFAOYSA-N cyano propanoate Chemical compound CCC(=O)OC#N NGLOXYOGEMWSOD-UHFFFAOYSA-N 0.000 claims 1
- SFFDITYNQBKGDV-UHFFFAOYSA-N cyanomethyl propanoate Chemical compound CCC(=O)OCC#N SFFDITYNQBKGDV-UHFFFAOYSA-N 0.000 claims 1
- 238000010586 diagram Methods 0.000 claims 1
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- 239000012085 test solution Substances 0.000 claims 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims 1
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- 150000007513 acids Chemical class 0.000 description 2
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- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- 229920001519 homopolymer Polymers 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
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- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 2
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- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000007974 melamines Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 125000004184 methoxymethyl group Chemical group [H]C([H])([H])OC([H])([H])* 0.000 description 1
- PPFNAOBWGRMDLL-UHFFFAOYSA-N methyl 2-ethoxyacetate Chemical compound CCOCC(=O)OC PPFNAOBWGRMDLL-UHFFFAOYSA-N 0.000 description 1
- MGJXBDMLVWIYOQ-UHFFFAOYSA-N methylazanide Chemical compound [NH-]C MGJXBDMLVWIYOQ-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- 229950004540 phenadoxone Drugs 0.000 description 1
- ROMWNDGABOQKIW-UHFFFAOYSA-N phenyliodanuidylbenzene Chemical compound C=1C=CC=CC=1[I-]C1=CC=CC=C1 ROMWNDGABOQKIW-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 150000008442 polyphenolic compounds Chemical class 0.000 description 1
- 235000013824 polyphenols Nutrition 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000007152 ring opening metathesis polymerisation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000008247 solid mixture Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 229960002180 tetracycline Drugs 0.000 description 1
- 229930101283 tetracycline Natural products 0.000 description 1
- 235000019364 tetracycline Nutrition 0.000 description 1
- 150000003522 tetracyclines Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- UFZALZPARUNQMW-UHFFFAOYSA-N trifluoromethanesulfonate;triphenylphosphanium Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[PH+](C=1C=CC=CC=1)C1=CC=CC=C1 UFZALZPARUNQMW-UHFFFAOYSA-N 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- 239000000052 vinegar Substances 0.000 description 1
- 235000021419 vinegar Nutrition 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F32/00—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
- C08F32/08—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having two condensed rings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/042,531 US6800416B2 (en) | 2002-01-09 | 2002-01-09 | Negative deep ultraviolet photoresist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200304582A true TW200304582A (en) | 2003-10-01 |
Family
ID=21922426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091134308A TW200304582A (en) | 2002-01-09 | 2002-11-26 | Negative deep ultraviolet photoresist |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6800416B2 (enExample) |
| EP (1) | EP1466215A1 (enExample) |
| JP (1) | JP4299670B2 (enExample) |
| KR (1) | KR20040081447A (enExample) |
| CN (1) | CN1325995C (enExample) |
| MY (1) | MY140628A (enExample) |
| TW (1) | TW200304582A (enExample) |
| WO (1) | WO2003058347A1 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040030799A (ko) * | 2001-07-12 | 2004-04-09 | 가부시끼가이샤 한도따이 센단 테크놀로지스 | 미세 패턴 형성 방법 |
| JP4216494B2 (ja) * | 2001-09-21 | 2009-01-28 | 富士フイルム株式会社 | 平版印刷版原版 |
| KR100486245B1 (ko) * | 2001-12-19 | 2005-05-03 | 삼성전자주식회사 | 하이드레이트 구조를 가지는 플루오르 함유 감광성 폴리머및 이를 포함하는 레지스트 조성물 |
| WO2003075094A1 (en) * | 2002-03-01 | 2003-09-12 | E.I. Du Pont De Nemours And Company | Fluorinated copolymers for microlithography |
| EP1481282A4 (en) * | 2002-03-04 | 2009-10-28 | Shipley Co Llc | NEGATIVE PHOTORESISTS FOR IMAGING WITH SHORT WAVE LENGTH |
| TW523807B (en) * | 2002-03-21 | 2003-03-11 | Nanya Technology Corp | Method for improving photolithography pattern profile |
| US20040134775A1 (en) * | 2002-07-24 | 2004-07-15 | Applied Materials, Inc. | Electrochemical processing cell |
| US6872504B2 (en) * | 2002-12-10 | 2005-03-29 | Massachusetts Institute Of Technology | High sensitivity X-ray photoresist |
| KR100561842B1 (ko) | 2003-08-25 | 2006-03-16 | 삼성전자주식회사 | 단량체 광산발생제 조성물, 상기 조성물로 코팅된 기판,상기 단량체 광산발생제 조성물을 이용하여 기판상에서화합물을 합성하는 방법 및 상기 방법에 의하여 제조된마이크로어레이 |
| US20050079454A1 (en) * | 2003-10-14 | 2005-04-14 | Best Leroy E. | Contrast enhancement materials containing non-PFOS surfactants |
| JP4235810B2 (ja) * | 2003-10-23 | 2009-03-11 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
| JP4448705B2 (ja) * | 2004-02-05 | 2010-04-14 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| GB0420702D0 (en) * | 2004-09-17 | 2004-10-20 | Univ Birmingham | Use of methanofullerene derivatives as resist materials and method for forming a resist layer |
| JP4205061B2 (ja) * | 2005-01-12 | 2009-01-07 | 東京応化工業株式会社 | ネガ型レジスト組成物およびレジストパターン形成方法 |
| JP5084216B2 (ja) * | 2005-10-03 | 2012-11-28 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | フォトリソグラフィーのための組成物および方法 |
| US7727705B2 (en) * | 2007-02-23 | 2010-06-01 | Fujifilm Electronic Materials, U.S.A., Inc. | High etch resistant underlayer compositions for multilayer lithographic processes |
| JP5130019B2 (ja) * | 2007-10-30 | 2013-01-30 | 東京応化工業株式会社 | ネガ型レジスト組成物及びレジストパターン形成方法 |
| JP5691585B2 (ja) | 2010-02-16 | 2015-04-01 | 住友化学株式会社 | レジスト組成物 |
| WO2011139073A2 (ko) * | 2010-05-04 | 2011-11-10 | 주식회사 엘지화학 | 네가티브 포토레지스트 조성물 및 소자의 패터닝 방법 |
| US8822130B2 (en) * | 2012-11-19 | 2014-09-02 | The Texas A&M University System | Self-assembled structures, method of manufacture thereof and articles comprising the same |
| US9223214B2 (en) * | 2012-11-19 | 2015-12-29 | The Texas A&M University System | Self-assembled structures, method of manufacture thereof and articles comprising the same |
| US10078261B2 (en) | 2013-09-06 | 2018-09-18 | Rohm And Haas Electronic Materials Llc | Self-assembled structures, method of manufacture thereof and articles comprising the same |
| CN106125510B (zh) * | 2016-08-30 | 2020-09-22 | Tcl科技集团股份有限公司 | 一种负性光阻薄膜及其制备方法与应用 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2913058C3 (de) | 1979-03-31 | 1981-10-15 | Ihle Ingenieurgesellschaft mbH, 4000 Düsseldorf | Vorrichtung zur Messung des Feststoffgehaltes einer Flüssigkeit |
| KR850001705B1 (ko) | 1981-06-10 | 1985-11-26 | 야마시다 도시히꼬 | 재봉틀 속도 설정장치 |
| US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| EP0440374B1 (en) | 1990-01-30 | 1997-04-16 | Wako Pure Chemical Industries Ltd | Chemical amplified resist material |
| JP3804138B2 (ja) | 1996-02-09 | 2006-08-02 | Ｊｓｒ株式会社 | ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物 |
| US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
| KR100265597B1 (ko) | 1996-12-30 | 2000-09-15 | 김영환 | Arf 감광막 수지 및 그 제조방법 |
| DE19755131C2 (de) * | 1997-12-11 | 2002-10-31 | Infineon Technologies Ag | Lösung von Tetramethylammoniumhydroxid in Wasser und Verfahren zur Herstellung der Lösung |
| IL141803A0 (en) | 1998-09-23 | 2002-03-10 | Du Pont | Photoresists, polymers and processes for microlithography |
| KR20020012206A (ko) | 1999-05-04 | 2002-02-15 | 메리 이. 보울러 | 플루오르화 중합체, 포토레지스트 및 마이크로리소그래피방법 |
| JP4790153B2 (ja) * | 2000-09-01 | 2011-10-12 | 富士通株式会社 | ネガ型レジスト組成物、レジストパターンの形成方法及び電子デバイスの製造方法 |
| US6548219B2 (en) * | 2001-01-26 | 2003-04-15 | International Business Machines Corporation | Substituted norbornene fluoroacrylate copolymers and use thereof in lithographic photoresist compositions |
| US6737215B2 (en) | 2001-05-11 | 2004-05-18 | Clariant Finance (Bvi) Ltd | Photoresist composition for deep ultraviolet lithography |
-
2002
- 2002-01-09 US US10/042,531 patent/US6800416B2/en not_active Expired - Fee Related
- 2002-11-26 TW TW091134308A patent/TW200304582A/zh unknown
-
2003
- 2003-01-03 CN CNB038020661A patent/CN1325995C/zh not_active Expired - Fee Related
- 2003-01-03 KR KR10-2004-7010644A patent/KR20040081447A/ko not_active Ceased
- 2003-01-03 EP EP03704351A patent/EP1466215A1/en not_active Withdrawn
- 2003-01-03 JP JP2003558598A patent/JP4299670B2/ja not_active Expired - Fee Related
- 2003-01-03 WO PCT/EP2003/000021 patent/WO2003058347A1/en not_active Ceased
- 2003-01-07 MY MYPI20030049A patent/MY140628A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040081447A (ko) | 2004-09-21 |
| US6800416B2 (en) | 2004-10-05 |
| EP1466215A1 (en) | 2004-10-13 |
| WO2003058347A1 (en) | 2003-07-17 |
| CN1325995C (zh) | 2007-07-11 |
| JP4299670B2 (ja) | 2009-07-22 |
| US20030129527A1 (en) | 2003-07-10 |
| CN1615458A (zh) | 2005-05-11 |
| MY140628A (en) | 2010-01-15 |
| JP2005514659A (ja) | 2005-05-19 |
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