JP4299670B2 - ネガ型深紫外線フォトレジスト - Google Patents

ネガ型深紫外線フォトレジスト Download PDF

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Publication number
JP4299670B2
JP4299670B2 JP2003558598A JP2003558598A JP4299670B2 JP 4299670 B2 JP4299670 B2 JP 4299670B2 JP 2003558598 A JP2003558598 A JP 2003558598A JP 2003558598 A JP2003558598 A JP 2003558598A JP 4299670 B2 JP4299670 B2 JP 4299670B2
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JP
Japan
Prior art keywords
photoresist
photoresist composition
polymer
substrate
hydroxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003558598A
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English (en)
Japanese (ja)
Other versions
JP2005514659A5 (enExample
JP2005514659A (ja
Inventor
隆範 工藤
パドマナバン・ムニラトーナ
ダンメル・ラルフ・アール
ターキー・メハット・エイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AZ Electronic Materials Japan Co Ltd
Original Assignee
AZ Electronic Materials Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials Japan Co Ltd filed Critical AZ Electronic Materials Japan Co Ltd
Publication of JP2005514659A publication Critical patent/JP2005514659A/ja
Publication of JP2005514659A5 publication Critical patent/JP2005514659A5/ja
Application granted granted Critical
Publication of JP4299670B2 publication Critical patent/JP4299670B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F32/00—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F32/08—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having two condensed rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2003558598A 2002-01-09 2003-01-03 ネガ型深紫外線フォトレジスト Expired - Fee Related JP4299670B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/042,531 US6800416B2 (en) 2002-01-09 2002-01-09 Negative deep ultraviolet photoresist
PCT/EP2003/000021 WO2003058347A1 (en) 2002-01-09 2003-01-03 Negative deep ultraviolet photoresist

Publications (3)

Publication Number Publication Date
JP2005514659A JP2005514659A (ja) 2005-05-19
JP2005514659A5 JP2005514659A5 (enExample) 2006-01-19
JP4299670B2 true JP4299670B2 (ja) 2009-07-22

Family

ID=21922426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003558598A Expired - Fee Related JP4299670B2 (ja) 2002-01-09 2003-01-03 ネガ型深紫外線フォトレジスト

Country Status (8)

Country Link
US (1) US6800416B2 (enExample)
EP (1) EP1466215A1 (enExample)
JP (1) JP4299670B2 (enExample)
KR (1) KR20040081447A (enExample)
CN (1) CN1325995C (enExample)
MY (1) MY140628A (enExample)
TW (1) TW200304582A (enExample)
WO (1) WO2003058347A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040030799A (ko) * 2001-07-12 2004-04-09 가부시끼가이샤 한도따이 센단 테크놀로지스 미세 패턴 형성 방법
JP4216494B2 (ja) * 2001-09-21 2009-01-28 富士フイルム株式会社 平版印刷版原版
KR100486245B1 (ko) * 2001-12-19 2005-05-03 삼성전자주식회사 하이드레이트 구조를 가지는 플루오르 함유 감광성 폴리머및 이를 포함하는 레지스트 조성물
WO2003075094A1 (en) * 2002-03-01 2003-09-12 E.I. Du Pont De Nemours And Company Fluorinated copolymers for microlithography
EP1481282A4 (en) * 2002-03-04 2009-10-28 Shipley Co Llc NEGATIVE PHOTORESISTS FOR IMAGING WITH SHORT WAVE LENGTH
TW523807B (en) * 2002-03-21 2003-03-11 Nanya Technology Corp Method for improving photolithography pattern profile
US20040134775A1 (en) * 2002-07-24 2004-07-15 Applied Materials, Inc. Electrochemical processing cell
US6872504B2 (en) * 2002-12-10 2005-03-29 Massachusetts Institute Of Technology High sensitivity X-ray photoresist
KR100561842B1 (ko) 2003-08-25 2006-03-16 삼성전자주식회사 단량체 광산발생제 조성물, 상기 조성물로 코팅된 기판,상기 단량체 광산발생제 조성물을 이용하여 기판상에서화합물을 합성하는 방법 및 상기 방법에 의하여 제조된마이크로어레이
US20050079454A1 (en) * 2003-10-14 2005-04-14 Best Leroy E. Contrast enhancement materials containing non-PFOS surfactants
JP4235810B2 (ja) * 2003-10-23 2009-03-11 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4448705B2 (ja) * 2004-02-05 2010-04-14 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
GB0420702D0 (en) * 2004-09-17 2004-10-20 Univ Birmingham Use of methanofullerene derivatives as resist materials and method for forming a resist layer
JP4205061B2 (ja) * 2005-01-12 2009-01-07 東京応化工業株式会社 ネガ型レジスト組成物およびレジストパターン形成方法
JP5084216B2 (ja) * 2005-10-03 2012-11-28 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトリソグラフィーのための組成物および方法
US7727705B2 (en) * 2007-02-23 2010-06-01 Fujifilm Electronic Materials, U.S.A., Inc. High etch resistant underlayer compositions for multilayer lithographic processes
JP5130019B2 (ja) * 2007-10-30 2013-01-30 東京応化工業株式会社 ネガ型レジスト組成物及びレジストパターン形成方法
JP5691585B2 (ja) 2010-02-16 2015-04-01 住友化学株式会社 レジスト組成物
WO2011139073A2 (ko) * 2010-05-04 2011-11-10 주식회사 엘지화학 네가티브 포토레지스트 조성물 및 소자의 패터닝 방법
US8822130B2 (en) * 2012-11-19 2014-09-02 The Texas A&M University System Self-assembled structures, method of manufacture thereof and articles comprising the same
US9223214B2 (en) * 2012-11-19 2015-12-29 The Texas A&M University System Self-assembled structures, method of manufacture thereof and articles comprising the same
US10078261B2 (en) 2013-09-06 2018-09-18 Rohm And Haas Electronic Materials Llc Self-assembled structures, method of manufacture thereof and articles comprising the same
CN106125510B (zh) * 2016-08-30 2020-09-22 Tcl科技集团股份有限公司 一种负性光阻薄膜及其制备方法与应用

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2913058C3 (de) 1979-03-31 1981-10-15 Ihle Ingenieurgesellschaft mbH, 4000 Düsseldorf Vorrichtung zur Messung des Feststoffgehaltes einer Flüssigkeit
KR850001705B1 (ko) 1981-06-10 1985-11-26 야마시다 도시히꼬 재봉틀 속도 설정장치
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
EP0440374B1 (en) 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
JP3804138B2 (ja) 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
KR100265597B1 (ko) 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
DE19755131C2 (de) * 1997-12-11 2002-10-31 Infineon Technologies Ag Lösung von Tetramethylammoniumhydroxid in Wasser und Verfahren zur Herstellung der Lösung
IL141803A0 (en) 1998-09-23 2002-03-10 Du Pont Photoresists, polymers and processes for microlithography
KR20020012206A (ko) 1999-05-04 2002-02-15 메리 이. 보울러 플루오르화 중합체, 포토레지스트 및 마이크로리소그래피방법
JP4790153B2 (ja) * 2000-09-01 2011-10-12 富士通株式会社 ネガ型レジスト組成物、レジストパターンの形成方法及び電子デバイスの製造方法
US6548219B2 (en) * 2001-01-26 2003-04-15 International Business Machines Corporation Substituted norbornene fluoroacrylate copolymers and use thereof in lithographic photoresist compositions
US6737215B2 (en) 2001-05-11 2004-05-18 Clariant Finance (Bvi) Ltd Photoresist composition for deep ultraviolet lithography

Also Published As

Publication number Publication date
KR20040081447A (ko) 2004-09-21
US6800416B2 (en) 2004-10-05
EP1466215A1 (en) 2004-10-13
TW200304582A (en) 2003-10-01
WO2003058347A1 (en) 2003-07-17
CN1325995C (zh) 2007-07-11
US20030129527A1 (en) 2003-07-10
CN1615458A (zh) 2005-05-11
MY140628A (en) 2010-01-15
JP2005514659A (ja) 2005-05-19

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