CN1325995C - 负性深紫外光刻胶 - Google Patents

负性深紫外光刻胶 Download PDF

Info

Publication number
CN1325995C
CN1325995C CNB038020661A CN03802066A CN1325995C CN 1325995 C CN1325995 C CN 1325995C CN B038020661 A CNB038020661 A CN B038020661A CN 03802066 A CN03802066 A CN 03802066A CN 1325995 C CN1325995 C CN 1325995C
Authority
CN
China
Prior art keywords
photoresist
photoresist composition
coating
substrate
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB038020661A
Other languages
English (en)
Chinese (zh)
Other versions
CN1615458A (zh
Inventor
工藤隆范
M·潘德曼纳班
R·R·达默尔
M·A·图卡伊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AZ Electronic Materials Japan Co Ltd
Original Assignee
Clariant Finance BVI Ltd
AZ Electronic Materials Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant Finance BVI Ltd, AZ Electronic Materials Japan Co Ltd filed Critical Clariant Finance BVI Ltd
Publication of CN1615458A publication Critical patent/CN1615458A/zh
Application granted granted Critical
Publication of CN1325995C publication Critical patent/CN1325995C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F32/00—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
    • C08F32/08—Homopolymers and copolymers of cyclic compounds having no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having two condensed rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
CNB038020661A 2002-01-09 2003-01-03 负性深紫外光刻胶 Expired - Fee Related CN1325995C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/042,531 2002-01-09
US10/042,531 US6800416B2 (en) 2002-01-09 2002-01-09 Negative deep ultraviolet photoresist

Publications (2)

Publication Number Publication Date
CN1615458A CN1615458A (zh) 2005-05-11
CN1325995C true CN1325995C (zh) 2007-07-11

Family

ID=21922426

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038020661A Expired - Fee Related CN1325995C (zh) 2002-01-09 2003-01-03 负性深紫外光刻胶

Country Status (8)

Country Link
US (1) US6800416B2 (enExample)
EP (1) EP1466215A1 (enExample)
JP (1) JP4299670B2 (enExample)
KR (1) KR20040081447A (enExample)
CN (1) CN1325995C (enExample)
MY (1) MY140628A (enExample)
TW (1) TW200304582A (enExample)
WO (1) WO2003058347A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2003007080A1 (ja) * 2001-07-12 2004-11-04 株式会社半導体先端テクノロジーズ 微細パターン形成方法
JP4216494B2 (ja) * 2001-09-21 2009-01-28 富士フイルム株式会社 平版印刷版原版
KR100486245B1 (ko) * 2001-12-19 2005-05-03 삼성전자주식회사 하이드레이트 구조를 가지는 플루오르 함유 감광성 폴리머및 이를 포함하는 레지스트 조성물
WO2003075094A1 (en) * 2002-03-01 2003-09-12 E.I. Du Pont De Nemours And Company Fluorinated copolymers for microlithography
WO2003077029A1 (en) * 2002-03-04 2003-09-18 Shipley Company, Llc Negative photoresists for short wavelength imaging
TW523807B (en) * 2002-03-21 2003-03-11 Nanya Technology Corp Method for improving photolithography pattern profile
US20040134775A1 (en) * 2002-07-24 2004-07-15 Applied Materials, Inc. Electrochemical processing cell
US6872504B2 (en) * 2002-12-10 2005-03-29 Massachusetts Institute Of Technology High sensitivity X-ray photoresist
KR100561842B1 (ko) 2003-08-25 2006-03-16 삼성전자주식회사 단량체 광산발생제 조성물, 상기 조성물로 코팅된 기판,상기 단량체 광산발생제 조성물을 이용하여 기판상에서화합물을 합성하는 방법 및 상기 방법에 의하여 제조된마이크로어레이
US20050079454A1 (en) * 2003-10-14 2005-04-14 Best Leroy E. Contrast enhancement materials containing non-PFOS surfactants
JP4235810B2 (ja) * 2003-10-23 2009-03-11 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4448705B2 (ja) * 2004-02-05 2010-04-14 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
GB0420702D0 (en) * 2004-09-17 2004-10-20 Univ Birmingham Use of methanofullerene derivatives as resist materials and method for forming a resist layer
JP4205061B2 (ja) * 2005-01-12 2009-01-07 東京応化工業株式会社 ネガ型レジスト組成物およびレジストパターン形成方法
TWI347492B (en) * 2005-10-03 2011-08-21 Rohm & Haas Elect Mat Compositions and processes for photolithography
US7727705B2 (en) * 2007-02-23 2010-06-01 Fujifilm Electronic Materials, U.S.A., Inc. High etch resistant underlayer compositions for multilayer lithographic processes
JP5130019B2 (ja) * 2007-10-30 2013-01-30 東京応化工業株式会社 ネガ型レジスト組成物及びレジストパターン形成方法
JP5691585B2 (ja) 2010-02-16 2015-04-01 住友化学株式会社 レジスト組成物
WO2011139073A2 (ko) * 2010-05-04 2011-11-10 주식회사 엘지화학 네가티브 포토레지스트 조성물 및 소자의 패터닝 방법
US9223214B2 (en) * 2012-11-19 2015-12-29 The Texas A&M University System Self-assembled structures, method of manufacture thereof and articles comprising the same
US8822130B2 (en) * 2012-11-19 2014-09-02 The Texas A&M University System Self-assembled structures, method of manufacture thereof and articles comprising the same
US10078261B2 (en) 2013-09-06 2018-09-18 Rohm And Haas Electronic Materials Llc Self-assembled structures, method of manufacture thereof and articles comprising the same
CN106125510B (zh) * 2016-08-30 2020-09-22 Tcl科技集团股份有限公司 一种负性光阻薄膜及其制备方法与应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000067072A1 (en) * 1999-05-04 2000-11-09 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
CN1319199A (zh) * 1998-09-23 2001-10-24 纳幕尔杜邦公司 微石印用光致抗蚀剂、聚合物和工艺

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2913058C3 (de) 1979-03-31 1981-10-15 Ihle Ingenieurgesellschaft mbH, 4000 Düsseldorf Vorrichtung zur Messung des Feststoffgehaltes einer Flüssigkeit
KR850001705B1 (ko) 1981-06-10 1985-11-26 야마시다 도시히꼬 재봉틀 속도 설정장치
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
EP0440374B1 (en) 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
JP3804138B2 (ja) 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
KR100265597B1 (ko) 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
DE19755131C2 (de) * 1997-12-11 2002-10-31 Infineon Technologies Ag Lösung von Tetramethylammoniumhydroxid in Wasser und Verfahren zur Herstellung der Lösung
JP4790153B2 (ja) * 2000-09-01 2011-10-12 富士通株式会社 ネガ型レジスト組成物、レジストパターンの形成方法及び電子デバイスの製造方法
US6548219B2 (en) * 2001-01-26 2003-04-15 International Business Machines Corporation Substituted norbornene fluoroacrylate copolymers and use thereof in lithographic photoresist compositions
US6737215B2 (en) 2001-05-11 2004-05-18 Clariant Finance (Bvi) Ltd Photoresist composition for deep ultraviolet lithography

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1319199A (zh) * 1998-09-23 2001-10-24 纳幕尔杜邦公司 微石印用光致抗蚀剂、聚合物和工艺
WO2000067072A1 (en) * 1999-05-04 2000-11-09 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography

Also Published As

Publication number Publication date
JP4299670B2 (ja) 2009-07-22
MY140628A (en) 2010-01-15
JP2005514659A (ja) 2005-05-19
WO2003058347A1 (en) 2003-07-17
US6800416B2 (en) 2004-10-05
EP1466215A1 (en) 2004-10-13
US20030129527A1 (en) 2003-07-10
CN1615458A (zh) 2005-05-11
KR20040081447A (ko) 2004-09-21
TW200304582A (en) 2003-10-01

Similar Documents

Publication Publication Date Title
CN1325995C (zh) 负性深紫外光刻胶
CN102879999B (zh) 形成正像的方法
US6844131B2 (en) Positive-working photoimageable bottom antireflective coating
JP5604734B2 (ja) ポジ型光像形成性底面反射防止コーティング
JP3778485B2 (ja) １９３ｎｍリソグラフィーのためのヒドロキシ−アミノ熱硬化下塗り
CN100335973C (zh) 负性作用可光成像底部抗反射涂层
JP6050810B2 (ja) 底面反射防止コーティング組成物及びそれの方法
TWI438575B (zh) 以可交聯聚合物為主之底層塗覆組合物
JP2015524573A (ja) 現像可能な底部反射防止膜組成物およびこれを用いたパターン形成方法
JP2013507653A (ja) ポジ型光像形成性底面反射防止コーティング
KR101376104B1 (ko) 포토리소그래피용 조성물 및 방법
HK1072813A (en) Negative deep ultraviolet photoresist
HK1076629A (en) Positive-working photoimageable bottom antireflective coating

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
ASS Succession or assignment of patent right

Owner name: AZ ELECTRONIC MATERIALS JAPAN

Free format text: FORMER OWNER: CLARIANT FINANCE (BVI) LTD.

Effective date: 20050513

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20050513

Address after: Tokyo, Japan

Applicant after: AZ Electronic Materials Japan Co., Ltd.

Address before: The British Virgin Islands of Tortola

Applicant before: Clariant Finance (BVI) Ltd.

C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1072813

Country of ref document: HK

C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070711

Termination date: 20100203

REG Reference to a national code

Ref country code: HK

Ref legal event code: WD

Ref document number: 1072813

Country of ref document: HK