TW200303544A - Method and system for performing equipotential sensing across a memory array to eliminate leakage currents - Google Patents

Method and system for performing equipotential sensing across a memory array to eliminate leakage currents Download PDF

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Publication number
TW200303544A
TW200303544A TW092100628A TW92100628A TW200303544A TW 200303544 A TW200303544 A TW 200303544A TW 092100628 A TW092100628 A TW 092100628A TW 92100628 A TW92100628 A TW 92100628A TW 200303544 A TW200303544 A TW 200303544A
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TW
Taiwan
Prior art keywords
memory cell
current
word line
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bit
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TW092100628A
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English (en)
Chinese (zh)
Inventor
Lung T Tran
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Hewlett Packard Co
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Publication of TW200303544A publication Critical patent/TW200303544A/zh

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
TW092100628A 2002-02-25 2003-01-13 Method and system for performing equipotential sensing across a memory array to eliminate leakage currents TW200303544A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/084,111 US6678189B2 (en) 2002-02-25 2002-02-25 Method and system for performing equipotential sensing across a memory array to eliminate leakage currents

Publications (1)

Publication Number Publication Date
TW200303544A true TW200303544A (en) 2003-09-01

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Application Number Title Priority Date Filing Date
TW092100628A TW200303544A (en) 2002-02-25 2003-01-13 Method and system for performing equipotential sensing across a memory array to eliminate leakage currents

Country Status (6)

Country Link
US (2) US6678189B2 (enExample)
EP (1) EP1339066A1 (enExample)
JP (1) JP2003288779A (enExample)
KR (1) KR20030070544A (enExample)
CN (1) CN100409363C (enExample)
TW (1) TW200303544A (enExample)

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KR102431206B1 (ko) * 2015-12-23 2022-08-11 에스케이하이닉스 주식회사 전자 장치
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Also Published As

Publication number Publication date
US6826079B2 (en) 2004-11-30
US20030161178A1 (en) 2003-08-28
EP1339066A1 (en) 2003-08-27
US20030206473A1 (en) 2003-11-06
CN100409363C (zh) 2008-08-06
US6678189B2 (en) 2004-01-13
JP2003288779A (ja) 2003-10-10
KR20030070544A (ko) 2003-08-30
CN1444228A (zh) 2003-09-24

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