JP2003288779A - メモリアレイにわたって等電位センシングを実行して漏れ電流を除去するための方法およびシステム - Google Patents

メモリアレイにわたって等電位センシングを実行して漏れ電流を除去するための方法およびシステム

Info

Publication number
JP2003288779A
JP2003288779A JP2003044349A JP2003044349A JP2003288779A JP 2003288779 A JP2003288779 A JP 2003288779A JP 2003044349 A JP2003044349 A JP 2003044349A JP 2003044349 A JP2003044349 A JP 2003044349A JP 2003288779 A JP2003288779 A JP 2003288779A
Authority
JP
Japan
Prior art keywords
current
memory cell
array
sense
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003044349A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003288779A5 (enExample
Inventor
Lung T Tran
ルン・ティー・トラン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Publication of JP2003288779A publication Critical patent/JP2003288779A/ja
Publication of JP2003288779A5 publication Critical patent/JP2003288779A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
JP2003044349A 2002-02-25 2003-02-21 メモリアレイにわたって等電位センシングを実行して漏れ電流を除去するための方法およびシステム Pending JP2003288779A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/084,111 US6678189B2 (en) 2002-02-25 2002-02-25 Method and system for performing equipotential sensing across a memory array to eliminate leakage currents
US10/084111 2002-02-25

Publications (2)

Publication Number Publication Date
JP2003288779A true JP2003288779A (ja) 2003-10-10
JP2003288779A5 JP2003288779A5 (enExample) 2005-06-30

Family

ID=27660385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003044349A Pending JP2003288779A (ja) 2002-02-25 2003-02-21 メモリアレイにわたって等電位センシングを実行して漏れ電流を除去するための方法およびシステム

Country Status (6)

Country Link
US (2) US6678189B2 (enExample)
EP (1) EP1339066A1 (enExample)
JP (1) JP2003288779A (enExample)
KR (1) KR20030070544A (enExample)
CN (1) CN100409363C (enExample)
TW (1) TW200303544A (enExample)

Cited By (4)

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KR100720624B1 (ko) 2005-02-25 2007-05-23 가부시끼가이샤 도시바 반도체 메모리 장치
JP2007134035A (ja) * 2005-11-09 2007-05-31 Samsung Electronics Co Ltd 選択された基準メモリセルを含む抵抗型メモリ素子及びその動作方法
US8345467B2 (en) 2005-12-15 2013-01-01 Samsung Electronics Co., Ltd. Resistive memory devices including selected reference memory cells operating responsive to read operations
JP2016517127A (ja) * 2013-03-22 2016-06-09 株式会社東芝 抵抗変化メモリ

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US6781910B2 (en) * 2002-05-17 2004-08-24 Hewlett-Packard Development Company, L.P. Small area magnetic memory devices
US20040039871A1 (en) * 2002-08-26 2004-02-26 Colin Stobbs Replacement memory device
JP2004164766A (ja) * 2002-11-14 2004-06-10 Renesas Technology Corp 不揮発性記憶装置
US6946882B2 (en) * 2002-12-20 2005-09-20 Infineon Technologies Ag Current sense amplifier
US7251178B2 (en) * 2004-09-07 2007-07-31 Infineon Technologies Ag Current sense amplifier
US7433253B2 (en) * 2002-12-20 2008-10-07 Qimonda Ag Integrated circuit, method of operating an integrated circuit, method of manufacturing an integrated circuit, memory module, stackable memory module
US6856556B1 (en) * 2003-04-03 2005-02-15 Siliconsystems, Inc. Storage subsystem with embedded circuit for protecting against anomalies in power signal from host
US6873543B2 (en) * 2003-05-30 2005-03-29 Hewlett-Packard Development Company, L.P. Memory device
US6987688B2 (en) * 2003-06-11 2006-01-17 Ovonyx, Inc. Die customization using programmable resistance memory elements
US7376004B2 (en) * 2003-09-11 2008-05-20 Samsung Electronics Co., Ltd. Increased magnetic memory array sizes and operating margins
EP1538632B1 (en) * 2003-11-12 2010-06-30 STMicroelectronics Srl Phase change memory device with overvoltage protection and method for protecting a phase change memory device against overvoltages
US7251159B2 (en) * 2004-01-09 2007-07-31 Broadcom Corporation Data encoding approach for implementing robust non-volatile memories
US7042757B2 (en) * 2004-03-04 2006-05-09 Hewlett-Packard Development Company, L.P. 1R1D MRAM block architecture
US6940747B1 (en) * 2004-05-26 2005-09-06 Hewlett-Packard Development Company, L.P. Magnetic memory device
US7365355B2 (en) * 2004-11-08 2008-04-29 Ovonyx, Inc. Programmable matrix array with phase-change material
KR100688524B1 (ko) 2005-01-25 2007-03-02 삼성전자주식회사 메모리 셀 어레이의 바이어싱 방법 및 반도체 메모리 장치
JP4890016B2 (ja) * 2005-03-16 2012-03-07 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US7180770B2 (en) * 2005-03-24 2007-02-20 Hewlett-Packard Development Company, L.P. Series diode thermally assisted MRAM
US7478294B2 (en) * 2005-06-14 2009-01-13 Etron Technology, Inc. Time controllable sensing scheme for sense amplifier in memory IC test
US7218563B1 (en) * 2005-11-18 2007-05-15 Macronix International Co., Ltd. Method and apparatus for reading data from nonvolatile memory
US7379364B2 (en) * 2006-10-19 2008-05-27 Unity Semiconductor Corporation Sensing a signal in a two-terminal memory array having leakage current
CN101622673B (zh) * 2007-02-23 2013-03-06 松下电器产业株式会社 非易失性存储装置及非易失性存储装置中的数据写入方法
US7382647B1 (en) * 2007-02-27 2008-06-03 International Business Machines Corporation Rectifying element for a crosspoint based memory array architecture
US8987702B2 (en) * 2007-05-01 2015-03-24 Micron Technology, Inc. Selectively conducting devices, diode constructions, constructions, and diode forming methods
US8487450B2 (en) * 2007-05-01 2013-07-16 Micron Technology, Inc. Semiconductor constructions comprising vertically-stacked memory units that include diodes utilizing at least two different dielectric materials, and electronic systems
JP4410272B2 (ja) * 2007-05-11 2010-02-03 株式会社東芝 不揮発性メモリ装置及びそのデータ書き込み方法
US7929335B2 (en) * 2007-06-11 2011-04-19 International Business Machines Corporation Use of a symmetric resistive memory material as a diode to drive symmetric or asymmetric resistive memory
US8335100B2 (en) * 2007-06-14 2012-12-18 Micron Technology, Inc. Circuit, biasing scheme and fabrication method for diode accessed cross-point resistive memory array
KR100919565B1 (ko) * 2007-07-24 2009-10-01 주식회사 하이닉스반도체 상 변화 메모리 장치
US7733712B1 (en) 2008-05-20 2010-06-08 Siliconsystems, Inc. Storage subsystem with embedded circuit for protecting against anomalies in power signal from host
US8134194B2 (en) * 2008-05-22 2012-03-13 Micron Technology, Inc. Memory cells, memory cell constructions, and memory cell programming methods
US8120951B2 (en) 2008-05-22 2012-02-21 Micron Technology, Inc. Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods
JP2012503327A (ja) * 2008-09-19 2012-02-02 アギア システムズ インコーポレーテッド 集積回路の抵抗値チューニングのために電磁放射によって誘発されるシリコンの同素体又は形態の変化
KR101537316B1 (ko) * 2008-11-14 2015-07-16 삼성전자주식회사 상 변화 메모리 장치
KR101570187B1 (ko) * 2010-11-19 2015-11-18 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. 어레이 내의 저항성 스위칭 디바이스를 판독하기 위한 회로 및 방법
KR101933719B1 (ko) * 2012-05-25 2018-12-28 에스케이하이닉스 주식회사 반도체 메모리 장치
US8982647B2 (en) * 2012-11-14 2015-03-17 Crossbar, Inc. Resistive random access memory equalization and sensing
CN106165519B (zh) * 2014-05-08 2020-04-21 华为技术有限公司 一种数据调度方法及装置
WO2016018404A1 (en) * 2014-07-31 2016-02-04 Hewlett-Packard Development Company, L.P. Determining a resistance state of a cell in a crossbar memory array
CN105572449A (zh) * 2015-12-09 2016-05-11 中国电子科技集团公司第四十一研究所 抑制高阻抗输入端电流泄露的集成电路
KR102431206B1 (ko) * 2015-12-23 2022-08-11 에스케이하이닉스 주식회사 전자 장치
KR102514045B1 (ko) 2016-04-21 2023-03-24 삼성전자주식회사 저항성 메모리 장치 및 이를 포함하는 메모리 시스템
US10205088B2 (en) * 2016-10-27 2019-02-12 Tdk Corporation Magnetic memory
US10424358B2 (en) 2017-06-12 2019-09-24 Sandisk Technologies Llc Bias control circuit with distributed architecture for memory cells
JP2019053803A (ja) * 2017-09-14 2019-04-04 株式会社東芝 半導体集積回路
US10726895B1 (en) 2019-01-07 2020-07-28 International Business Machines Corporation Circuit methodology for differential weight reading in resistive processing unit devices
US11120871B2 (en) * 2019-04-17 2021-09-14 Samsung Electronics Co., Ltd. Denoising of intrinsic sneak current by cell location in PRAM
US10714205B1 (en) * 2019-06-25 2020-07-14 Sandisk Technologies Llc Multi-purposed leak detector
CN111755046A (zh) * 2020-05-19 2020-10-09 中国科学院上海微系统与信息技术研究所 一种存储器装置的偏置方法
CN111769133A (zh) * 2020-07-06 2020-10-13 中国科学院微电子研究所 一种提升选通管器件性能的方法、系统、设备和介质
CN113257322B (zh) * 2021-06-21 2021-10-08 上海亿存芯半导体有限公司 读取电路及非易失性存储器
CN113539311A (zh) * 2021-06-29 2021-10-22 中国科学院上海微系统与信息技术研究所 一种减少二极管选通阵列寄生漏电的偏置方法
US12040005B2 (en) 2021-12-06 2024-07-16 Samsung Electronics Co., Ltd. Semiconductor device

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US5991193A (en) 1997-12-02 1999-11-23 International Business Machines Corporation Voltage biasing for magnetic ram with magnetic tunnel memory cells
US6185143B1 (en) 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
US6324093B1 (en) * 2000-09-15 2001-11-27 Hewlett-Packard Company Write-once thin-film memory

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100720624B1 (ko) 2005-02-25 2007-05-23 가부시끼가이샤 도시바 반도체 메모리 장치
JP2007134035A (ja) * 2005-11-09 2007-05-31 Samsung Electronics Co Ltd 選択された基準メモリセルを含む抵抗型メモリ素子及びその動作方法
US8345467B2 (en) 2005-12-15 2013-01-01 Samsung Electronics Co., Ltd. Resistive memory devices including selected reference memory cells operating responsive to read operations
JP2016517127A (ja) * 2013-03-22 2016-06-09 株式会社東芝 抵抗変化メモリ

Also Published As

Publication number Publication date
TW200303544A (en) 2003-09-01
US6826079B2 (en) 2004-11-30
US20030161178A1 (en) 2003-08-28
EP1339066A1 (en) 2003-08-27
US20030206473A1 (en) 2003-11-06
CN100409363C (zh) 2008-08-06
US6678189B2 (en) 2004-01-13
KR20030070544A (ko) 2003-08-30
CN1444228A (zh) 2003-09-24

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