CN100409363C - 数据存储器件及其制造方法 - Google Patents

数据存储器件及其制造方法 Download PDF

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Publication number
CN100409363C
CN100409363C CNB031063489A CN03106348A CN100409363C CN 100409363 C CN100409363 C CN 100409363C CN B031063489 A CNB031063489 A CN B031063489A CN 03106348 A CN03106348 A CN 03106348A CN 100409363 C CN100409363 C CN 100409363C
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China
Prior art keywords
memory cell
word line
current
voltage
read
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Expired - Lifetime
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CNB031063489A
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Chinese (zh)
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CN1444228A (zh
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L·T·特兰
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CNB031063489A 2002-02-25 2003-02-25 数据存储器件及其制造方法 Expired - Lifetime CN100409363C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/084111 2002-02-25
US10/084,111 US6678189B2 (en) 2002-02-25 2002-02-25 Method and system for performing equipotential sensing across a memory array to eliminate leakage currents

Publications (2)

Publication Number Publication Date
CN1444228A CN1444228A (zh) 2003-09-24
CN100409363C true CN100409363C (zh) 2008-08-06

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Family Applications (1)

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CNB031063489A Expired - Lifetime CN100409363C (zh) 2002-02-25 2003-02-25 数据存储器件及其制造方法

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US (2) US6678189B2 (enExample)
EP (1) EP1339066A1 (enExample)
JP (1) JP2003288779A (enExample)
KR (1) KR20030070544A (enExample)
CN (1) CN100409363C (enExample)
TW (1) TW200303544A (enExample)

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US7218563B1 (en) * 2005-11-18 2007-05-15 Macronix International Co., Ltd. Method and apparatus for reading data from nonvolatile memory
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WO2008105155A1 (ja) * 2007-02-23 2008-09-04 Panasonic Corporation 不揮発性メモリ装置、および不揮発性メモリ装置におけるデータ書込方法
US7382647B1 (en) 2007-02-27 2008-06-03 International Business Machines Corporation Rectifying element for a crosspoint based memory array architecture
US8987702B2 (en) 2007-05-01 2015-03-24 Micron Technology, Inc. Selectively conducting devices, diode constructions, constructions, and diode forming methods
US8487450B2 (en) * 2007-05-01 2013-07-16 Micron Technology, Inc. Semiconductor constructions comprising vertically-stacked memory units that include diodes utilizing at least two different dielectric materials, and electronic systems
JP4410272B2 (ja) * 2007-05-11 2010-02-03 株式会社東芝 不揮発性メモリ装置及びそのデータ書き込み方法
US7929335B2 (en) * 2007-06-11 2011-04-19 International Business Machines Corporation Use of a symmetric resistive memory material as a diode to drive symmetric or asymmetric resistive memory
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KR101933719B1 (ko) * 2012-05-25 2018-12-28 에스케이하이닉스 주식회사 반도체 메모리 장치
US8982647B2 (en) * 2012-11-14 2015-03-17 Crossbar, Inc. Resistive random access memory equalization and sensing
US9001559B2 (en) 2013-03-22 2015-04-07 Masahiro Takahashi Resistance change memory
KR101881430B1 (ko) * 2014-05-08 2018-07-24 후아웨이 테크놀러지 컴퍼니 리미티드 데이터 스케줄링 방법 및 장치
WO2016018404A1 (en) * 2014-07-31 2016-02-04 Hewlett-Packard Development Company, L.P. Determining a resistance state of a cell in a crossbar memory array
CN105572449A (zh) * 2015-12-09 2016-05-11 中国电子科技集团公司第四十一研究所 抑制高阻抗输入端电流泄露的集成电路
KR102431206B1 (ko) * 2015-12-23 2022-08-11 에스케이하이닉스 주식회사 전자 장치
KR102514045B1 (ko) 2016-04-21 2023-03-24 삼성전자주식회사 저항성 메모리 장치 및 이를 포함하는 메모리 시스템
US10205088B2 (en) * 2016-10-27 2019-02-12 Tdk Corporation Magnetic memory
US10424358B2 (en) 2017-06-12 2019-09-24 Sandisk Technologies Llc Bias control circuit with distributed architecture for memory cells
JP2019053803A (ja) * 2017-09-14 2019-04-04 株式会社東芝 半導体集積回路
US10726895B1 (en) 2019-01-07 2020-07-28 International Business Machines Corporation Circuit methodology for differential weight reading in resistive processing unit devices
US11120871B2 (en) * 2019-04-17 2021-09-14 Samsung Electronics Co., Ltd. Denoising of intrinsic sneak current by cell location in PRAM
US10714205B1 (en) * 2019-06-25 2020-07-14 Sandisk Technologies Llc Multi-purposed leak detector
CN111755046A (zh) * 2020-05-19 2020-10-09 中国科学院上海微系统与信息技术研究所 一种存储器装置的偏置方法
CN111769133A (zh) * 2020-07-06 2020-10-13 中国科学院微电子研究所 一种提升选通管器件性能的方法、系统、设备和介质
CN113257322B (zh) * 2021-06-21 2021-10-08 上海亿存芯半导体有限公司 读取电路及非易失性存储器
CN113539311A (zh) * 2021-06-29 2021-10-22 中国科学院上海微系统与信息技术研究所 一种减少二极管选通阵列寄生漏电的偏置方法
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US20010012228A1 (en) * 2000-02-04 2001-08-09 Perner Frederick A. Differential sense amplifiers for resistive cross point memory cell arrays

Also Published As

Publication number Publication date
EP1339066A1 (en) 2003-08-27
US6826079B2 (en) 2004-11-30
CN1444228A (zh) 2003-09-24
US6678189B2 (en) 2004-01-13
US20030206473A1 (en) 2003-11-06
TW200303544A (en) 2003-09-01
US20030161178A1 (en) 2003-08-28
JP2003288779A (ja) 2003-10-10
KR20030070544A (ko) 2003-08-30

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