SK10062003A3 - Renovovanie výrobkov z kovov taviteľných pri vysokých teplotách - Google Patents
Renovovanie výrobkov z kovov taviteľných pri vysokých teplotách Download PDFInfo
- Publication number
- SK10062003A3 SK10062003A3 SK1006-2003A SK10062003A SK10062003A3 SK 10062003 A3 SK10062003 A3 SK 10062003A3 SK 10062003 A SK10062003 A SK 10062003A SK 10062003 A3 SK10062003 A3 SK 10062003A3
- Authority
- SK
- Slovakia
- Prior art keywords
- consumed
- tantalum
- surface area
- metal
- target
- Prior art date
Links
- 239000003870 refractory metal Substances 0.000 title claims abstract description 6
- 230000003716 rejuvenation Effects 0.000 title abstract 3
- 238000000034 method Methods 0.000 claims abstract description 38
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 36
- 239000000843 powder Substances 0.000 claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 238000002844 melting Methods 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 5
- 239000007921 spray Substances 0.000 claims description 29
- 238000004544 sputter deposition Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 16
- 239000002245 particle Substances 0.000 claims description 13
- 238000005477 sputtering target Methods 0.000 claims description 10
- 238000010894 electron beam technology Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000012943 hotmelt Substances 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- 238000005488 sandblasting Methods 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000002923 metal particle Substances 0.000 claims 10
- 238000005299 abrasion Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 abstract description 15
- 239000010949 copper Substances 0.000 abstract description 6
- 238000010438 heat treatment Methods 0.000 abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052802 copper Inorganic materials 0.000 abstract description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract description 3
- 230000008018 melting Effects 0.000 abstract description 3
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 3
- 239000011733 molybdenum Substances 0.000 abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 238000000926 separation method Methods 0.000 abstract description 2
- 238000009418 renovation Methods 0.000 description 8
- 238000005245 sintering Methods 0.000 description 5
- 238000004064 recycling Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000009419 refurbishment Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F2007/068—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts repairing articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Alloys Or Alloy Compounds (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Furnace Housings, Linings, Walls, And Ceilings (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
- Catalysts (AREA)
- Arc-Extinguishing Devices That Are Switches (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26874201P | 2001-02-14 | 2001-02-14 | |
PCT/US2002/004306 WO2002064287A2 (fr) | 2001-02-14 | 2002-02-14 | Restauration de produits a base de metaux refractaires |
Publications (1)
Publication Number | Publication Date |
---|---|
SK10062003A3 true SK10062003A3 (sk) | 2004-03-02 |
Family
ID=23024267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SK1006-2003A SK10062003A3 (sk) | 2001-02-14 | 2002-02-14 | Renovovanie výrobkov z kovov taviteľných pri vysokých teplotách |
Country Status (25)
Country | Link |
---|---|
US (1) | US20020112955A1 (fr) |
EP (1) | EP1362132B1 (fr) |
JP (1) | JP2004523653A (fr) |
CN (1) | CN1221684C (fr) |
AT (1) | ATE325906T1 (fr) |
AU (1) | AU2002250075B2 (fr) |
BG (1) | BG64959B1 (fr) |
BR (1) | BR0207202A (fr) |
CA (1) | CA2437713A1 (fr) |
CZ (1) | CZ20032186A3 (fr) |
DE (1) | DE60211309T2 (fr) |
DK (1) | DK1362132T3 (fr) |
ES (1) | ES2261656T3 (fr) |
HK (1) | HK1062902A1 (fr) |
HU (1) | HUP0400730A2 (fr) |
IS (1) | IS6911A (fr) |
MX (1) | MXPA03007293A (fr) |
NO (1) | NO20033567D0 (fr) |
NZ (1) | NZ527503A (fr) |
PL (1) | PL363521A1 (fr) |
PT (1) | PT1362132E (fr) |
RU (1) | RU2304633C2 (fr) |
SK (1) | SK10062003A3 (fr) |
WO (1) | WO2002064287A2 (fr) |
ZA (1) | ZA200306259B (fr) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7175802B2 (en) * | 2001-09-17 | 2007-02-13 | Heraeus, Inc. | Refurbishing spent sputtering targets |
EP2278045A1 (fr) * | 2002-01-24 | 2011-01-26 | H.C. Starck Inc. | methods de rénovation de cibles de pulvérisation en tantale et cibles rénovées |
US20040016635A1 (en) * | 2002-07-19 | 2004-01-29 | Ford Robert B. | Monolithic sputtering target assembly |
US20040065546A1 (en) * | 2002-10-04 | 2004-04-08 | Michaluk Christopher A. | Method to recover spent components of a sputter target |
US7504008B2 (en) * | 2004-03-12 | 2009-03-17 | Applied Materials, Inc. | Refurbishment of sputtering targets |
US20060021870A1 (en) * | 2004-07-27 | 2006-02-02 | Applied Materials, Inc. | Profile detection and refurbishment of deposition targets |
US20060081459A1 (en) * | 2004-10-18 | 2006-04-20 | Applied Materials, Inc. | In-situ monitoring of target erosion |
CN101368262B (zh) | 2005-05-05 | 2012-06-06 | H.C.施塔克有限公司 | 向表面施加涂层的方法 |
EP1880035B1 (fr) | 2005-05-05 | 2021-01-20 | Höganäs Germany GmbH | Procede de revetement d'une surface de substrat et produit muni du revetement |
US9127362B2 (en) | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
KR101065427B1 (ko) * | 2005-11-07 | 2011-09-19 | 도시바 마테리알 가부시키가이샤 | 스퍼터링 타겟 및 그 제조 방법 |
DE102005055255A1 (de) * | 2005-11-19 | 2007-05-31 | Applied Materials Gmbh & Co. Kg | Verfahren zum Herstellen eines Targets |
US8647484B2 (en) | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
US20080078268A1 (en) * | 2006-10-03 | 2008-04-03 | H.C. Starck Inc. | Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof |
US20080145688A1 (en) | 2006-12-13 | 2008-06-19 | H.C. Starck Inc. | Method of joining tantalum clade steel structures |
US8197894B2 (en) | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
US8968536B2 (en) | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
JP2010536134A (ja) * | 2007-08-08 | 2010-11-25 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 材料をx線源のアノードの表面に適用するための方法及び装置、並びに、アノード及びx線源 |
US8699667B2 (en) * | 2007-10-02 | 2014-04-15 | General Electric Company | Apparatus for x-ray generation and method of making same |
US7901552B2 (en) | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
US8246903B2 (en) | 2008-09-09 | 2012-08-21 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
US8043655B2 (en) * | 2008-10-06 | 2011-10-25 | H.C. Starck, Inc. | Low-energy method of manufacturing bulk metallic structures with submicron grain sizes |
FR2953747B1 (fr) * | 2009-12-14 | 2012-03-23 | Snecma | Procede de reparation d'une aube en titane par rechargement laser et compression hip moderee |
DE102010004241A1 (de) * | 2010-01-08 | 2011-07-14 | H.C. Starck GmbH, 38642 | Verfahren zur Herstellung von Funktionsschichten auf der Oberfläche von Werkstücken, eine so hergestellte Funktionsschicht und ein Werkstück |
US9120183B2 (en) | 2011-09-29 | 2015-09-01 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets |
JP6532219B2 (ja) * | 2013-11-25 | 2019-06-19 | 株式会社フルヤ金属 | スパッタリングターゲットの再生方法及び再生スパッタリングターゲット |
AT14301U1 (de) * | 2014-07-09 | 2015-07-15 | Plansee Se | Verfahren zur Herstellung eines Bauteils |
CN104439239B (zh) * | 2014-11-06 | 2017-05-03 | 金堆城钼业股份有限公司 | 一种重复利用中频感应烧结炉钨钼废发热体的方法 |
DE102015008921A1 (de) * | 2015-07-15 | 2017-01-19 | Evobeam GmbH | Verfahren zur additiven Herstellung von Bauteilen |
US10844475B2 (en) * | 2015-12-28 | 2020-11-24 | Jx Nippon Mining & Metals Corporation | Method for manufacturing sputtering target |
CN105618753A (zh) * | 2016-03-03 | 2016-06-01 | 中研智能装备有限公司 | 一种轧辊等离子3d打印再制造设备及再制造方法 |
DE102016121951A1 (de) * | 2016-11-15 | 2018-05-17 | Cl Schutzrechtsverwaltungs Gmbh | Vorrichtung zur additiven Herstellung dreidimensionaler Objekte |
JP6650141B1 (ja) * | 2019-01-10 | 2020-02-19 | 株式会社ティー・オール | 使用済み成膜用ターゲットの充填式再生方法 |
JP2022523357A (ja) * | 2019-02-22 | 2022-04-22 | エリコン サーフェス ソリューションズ アーゲー、 プフェフィコン | 物理的気相成長(pvd)用ターゲットの製造方法 |
CN110523987B (zh) * | 2019-09-27 | 2021-02-05 | 华中科技大学 | 一种用于致密材料制备的激光烧结同步压制增材制造系统 |
CN111940745B (zh) * | 2019-12-30 | 2024-01-19 | 宁夏东方钽业股份有限公司 | 大松装冶金级钽粉的制造方法 |
CN112522698B (zh) * | 2020-11-26 | 2023-04-25 | 江苏科技大学 | 一种超声振动辅助激光熔覆钨钽铌合金装置及方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3827725B2 (ja) * | 1995-05-18 | 2006-09-27 | 旭硝子セラミックス株式会社 | スパッタリング用ターゲットの製造方法 |
DE19626732B4 (de) * | 1996-07-03 | 2009-01-29 | W.C. Heraeus Gmbh | Vorrichtung und Verfahren zum Herstellen und Recyclen von Sputtertargets |
US6348113B1 (en) * | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
DE19925330A1 (de) * | 1999-06-02 | 2000-12-07 | Leybold Materials Gmbh | Verfahren zur Herstellung oder zum Recyceln von Sputtertargets |
-
2002
- 2002-02-14 CN CNB028048210A patent/CN1221684C/zh not_active Expired - Fee Related
- 2002-02-14 US US10/075,709 patent/US20020112955A1/en not_active Abandoned
- 2002-02-14 EP EP02718966A patent/EP1362132B1/fr not_active Expired - Lifetime
- 2002-02-14 ES ES02718966T patent/ES2261656T3/es not_active Expired - Lifetime
- 2002-02-14 JP JP2002564069A patent/JP2004523653A/ja active Pending
- 2002-02-14 CA CA002437713A patent/CA2437713A1/fr not_active Abandoned
- 2002-02-14 MX MXPA03007293A patent/MXPA03007293A/es active IP Right Grant
- 2002-02-14 CZ CZ20032186A patent/CZ20032186A3/cs unknown
- 2002-02-14 AT AT02718966T patent/ATE325906T1/de not_active IP Right Cessation
- 2002-02-14 BR BR0207202-5A patent/BR0207202A/pt not_active IP Right Cessation
- 2002-02-14 SK SK1006-2003A patent/SK10062003A3/sk not_active Application Discontinuation
- 2002-02-14 HU HU0400730A patent/HUP0400730A2/hu unknown
- 2002-02-14 DK DK02718966T patent/DK1362132T3/da active
- 2002-02-14 AU AU2002250075A patent/AU2002250075B2/en not_active Ceased
- 2002-02-14 PL PL02363521A patent/PL363521A1/xx not_active Application Discontinuation
- 2002-02-14 PT PT02718966T patent/PT1362132E/pt unknown
- 2002-02-14 RU RU2003127947/02A patent/RU2304633C2/ru not_active IP Right Cessation
- 2002-02-14 WO PCT/US2002/004306 patent/WO2002064287A2/fr active IP Right Grant
- 2002-02-14 NZ NZ527503A patent/NZ527503A/en unknown
- 2002-02-14 DE DE60211309T patent/DE60211309T2/de not_active Expired - Lifetime
-
2003
- 2003-08-04 BG BG108059A patent/BG64959B1/bg unknown
- 2003-08-12 NO NO20033567A patent/NO20033567D0/no not_active Application Discontinuation
- 2003-08-13 IS IS6911A patent/IS6911A/is unknown
- 2003-08-13 ZA ZA200306259A patent/ZA200306259B/en unknown
-
2004
- 2004-08-05 HK HK04105823A patent/HK1062902A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US20020112955A1 (en) | 2002-08-22 |
BG108059A (en) | 2005-04-30 |
IS6911A (is) | 2003-08-13 |
NZ527503A (en) | 2004-07-30 |
DE60211309T2 (de) | 2007-05-24 |
EP1362132A2 (fr) | 2003-11-19 |
CZ20032186A3 (cs) | 2004-02-18 |
BR0207202A (pt) | 2004-01-27 |
CA2437713A1 (fr) | 2002-08-22 |
PL363521A1 (en) | 2004-11-29 |
ATE325906T1 (de) | 2006-06-15 |
HUP0400730A2 (en) | 2004-08-30 |
CN1491294A (zh) | 2004-04-21 |
MXPA03007293A (es) | 2005-09-08 |
PT1362132E (pt) | 2006-09-29 |
HK1062902A1 (en) | 2004-12-03 |
ZA200306259B (en) | 2004-08-13 |
BG64959B1 (bg) | 2006-10-31 |
EP1362132B1 (fr) | 2006-05-10 |
WO2002064287A3 (fr) | 2002-10-10 |
WO2002064287A2 (fr) | 2002-08-22 |
NO20033567L (no) | 2003-08-12 |
DE60211309D1 (de) | 2006-06-14 |
RU2304633C2 (ru) | 2007-08-20 |
NO20033567D0 (no) | 2003-08-12 |
EP1362132A4 (fr) | 2004-07-28 |
CN1221684C (zh) | 2005-10-05 |
DK1362132T3 (da) | 2006-09-11 |
JP2004523653A (ja) | 2004-08-05 |
AU2002250075B2 (en) | 2007-03-29 |
ES2261656T3 (es) | 2006-11-16 |
RU2003127947A (ru) | 2005-04-10 |
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