SG85129A1 - A chemical amplifying type positive resist composition - Google Patents

A chemical amplifying type positive resist composition

Info

Publication number
SG85129A1
SG85129A1 SG9904186A SG1999004186A SG85129A1 SG 85129 A1 SG85129 A1 SG 85129A1 SG 9904186 A SG9904186 A SG 9904186A SG 1999004186 A SG1999004186 A SG 1999004186A SG 85129 A1 SG85129 A1 SG 85129A1
Authority
SG
Singapore
Prior art keywords
resist composition
positive resist
type positive
amplifying type
chemical amplifying
Prior art date
Application number
SG9904186A
Other languages
English (en)
Inventor
Fujishima Hiroaki
Uetani Yasunori
Araki Kaoru
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of SG85129A1 publication Critical patent/SG85129A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
SG9904186A 1998-08-26 1999-08-25 A chemical amplifying type positive resist composition SG85129A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24014398 1998-08-26

Publications (1)

Publication Number Publication Date
SG85129A1 true SG85129A1 (en) 2001-12-19

Family

ID=17055144

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9904186A SG85129A1 (en) 1998-08-26 1999-08-25 A chemical amplifying type positive resist composition

Country Status (7)

Country Link
US (1) US6239231B1 (zh)
EP (1) EP0982628B1 (zh)
KR (1) KR100574574B1 (zh)
CN (1) CN1190706C (zh)
DE (1) DE69933825T2 (zh)
SG (1) SG85129A1 (zh)
TW (1) TW520463B (zh)

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* Cited by examiner, † Cited by third party
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CN1190706C (zh) * 1998-08-26 2005-02-23 住友化学工业株式会社 一种化学增强型正光刻胶组合物
TWI263866B (en) * 1999-01-18 2006-10-11 Sumitomo Chemical Co Chemical amplification type positive resist composition
US6479211B1 (en) * 1999-05-26 2002-11-12 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
KR100585067B1 (ko) * 1999-07-23 2006-05-30 삼성전자주식회사 백본이 환상 구조를 가지는 감광성 폴리머와 이를 포함하는 감광성 코폴리머
KR20010099670A (ko) 1999-08-05 2001-11-09 고지마 아끼로, 오가와 다이스께 포토레지스트용 고분자 화합물 및 포토레지스트용 수지조성물
US6692888B1 (en) 1999-10-07 2004-02-17 Shipley Company, L.L.C. Copolymers having nitrile and alicyclic leaving groups and photoresist compositions comprising same
KR100498440B1 (ko) * 1999-11-23 2005-07-01 삼성전자주식회사 백본이 환상 구조를 가지는 감광성 폴리머와 이를포함하는 레지스트 조성물
JP4529245B2 (ja) * 1999-12-03 2010-08-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP4453138B2 (ja) * 1999-12-22 2010-04-21 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP4061801B2 (ja) * 2000-01-24 2008-03-19 住友化学株式会社 化学増幅型ポジ型レジスト組成物
JP2001215704A (ja) * 2000-01-31 2001-08-10 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
US6777157B1 (en) 2000-02-26 2004-08-17 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising same
TW573225B (en) * 2000-02-28 2004-01-21 Sumitomo Chemical Co Chemically amplified positive resist composition
JP4329214B2 (ja) * 2000-03-28 2009-09-09 住友化学株式会社 化学増幅型ポジ型レジスト組成物
CN1210623C (zh) * 2000-04-04 2005-07-13 住友化学工业株式会社 化学放大型正光刻胶组合物
JP3972568B2 (ja) * 2000-05-09 2007-09-05 住友化学株式会社 化学増幅型ポジ型レジスト組成物及びスルホニウム塩
JP4576737B2 (ja) * 2000-06-09 2010-11-10 Ｊｓｒ株式会社 感放射線性樹脂組成物
TWI286664B (en) * 2000-06-23 2007-09-11 Sumitomo Chemical Co Chemical amplification type positive resist composition and sulfonium salt
JP2002097219A (ja) * 2000-09-21 2002-04-02 Sumitomo Chem Co Ltd 金属含量の低減されたポリ（メタ）アクリレート類の製造方法
JP3945741B2 (ja) 2000-12-04 2007-07-18 東京応化工業株式会社 ポジ型レジスト組成物
US6521781B2 (en) * 2000-12-15 2003-02-18 Mitsubishi Gas Chemical Company, Inc. Production of 2-hydrocarbyl-2-adamantyl acrylate compounds
JP2002196495A (ja) * 2000-12-22 2002-07-12 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
CN1208306C (zh) * 2001-01-26 2005-06-29 株式会社德山 烷基金刚烷基酯的制造方法及组合物
WO2002068527A2 (en) * 2001-02-23 2002-09-06 Arch Specialty Chemicals, Inc. NOVEL β-OXO COMPOUNDS AND THEIR USE IN PHOTORESIST
AU2002255598A1 (en) * 2001-02-25 2002-09-12 Shipley Company, L.L.C. Polymers and photoresist compositions
JP4524940B2 (ja) * 2001-03-15 2010-08-18 住友化学株式会社 化学増幅型ポジ型レジスト組成物
US6737215B2 (en) * 2001-05-11 2004-05-18 Clariant Finance (Bvi) Ltd Photoresist composition for deep ultraviolet lithography
TW581941B (en) * 2001-06-21 2004-04-01 Fuji Photo Film Co Ltd Positive resist composition
US7192681B2 (en) * 2001-07-05 2007-03-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
JP3895224B2 (ja) * 2001-12-03 2007-03-22 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP3836359B2 (ja) 2001-12-03 2006-10-25 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
CN100520579C (zh) * 2001-12-03 2009-07-29 东京应化工业株式会社 正型抗蚀剂组合物及使用其形成抗蚀图形的方法
KR100979871B1 (ko) * 2002-04-01 2010-09-02 다이셀 가가꾸 고교 가부시끼가이샤 ＡｒＦ 엑시머 레이저 레지스트용 중합체 용액의 제조 방법
KR20050094828A (ko) * 2002-12-26 2005-09-28 도오꾜오까고오교 가부시끼가이샤 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
JP4434762B2 (ja) * 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
KR100725430B1 (ko) * 2003-02-26 2007-06-07 도오꾜오까고오교 가부시끼가이샤 실세스퀴옥산 수지, 포지티브형 레지스트 조성물, 레지스트적층체 및 레지스트 패턴 형성 방법
JP2004333548A (ja) * 2003-04-30 2004-11-25 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物およびレジストパターン形成方法
JP4772288B2 (ja) 2003-06-05 2011-09-14 東京応化工業株式会社 ホトレジスト組成物用樹脂、ホトレジスト組成物、およびレジストパターン形成方法
JP4327003B2 (ja) * 2003-07-01 2009-09-09 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
JP2005031233A (ja) 2003-07-09 2005-02-03 Tokyo Ohka Kogyo Co Ltd レジスト組成物、積層体、及びレジストパターン形成方法
JP4398783B2 (ja) * 2003-09-03 2010-01-13 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
WO2005031464A1 (ja) * 2003-09-25 2005-04-07 Tokyo Ohka Kogyo Co., Ltd. 低加速電子線用ポジ型レジスト組成物、レジスト積層体およびパターン形成方法
CN1603957A (zh) * 2003-10-03 2005-04-06 住友化学工业株式会社 化学放大型正光刻胶组合物及其树脂
JP4188265B2 (ja) 2003-10-23 2008-11-26 東京応化工業株式会社 レジスト組成物およびレジストパターン形成方法
TWI370327B (en) * 2004-01-21 2012-08-11 Sumitomo Chemical Co A chemical amplification type positive resist composition
KR100827903B1 (ko) * 2004-05-20 2008-05-07 미츠비시 레이온 가부시키가이샤 (메트)아크릴산 에스테르, 중합체, 및 레지스트 조성물
US7304175B2 (en) * 2005-02-16 2007-12-04 Sumitomo Chemical Company, Limited Salt suitable for an acid generator and a chemically amplified resist composition containing the same
KR100732301B1 (ko) 2005-06-02 2007-06-25 주식회사 하이닉스반도체 포토레지스트 중합체, 포토레지스트 조성물 및 이를 이용한반도체 소자의 제조 방법
CN1940726B (zh) * 2005-09-29 2011-07-13 住友化学株式会社 制备化学放大正性光刻胶用树脂的方法
KR20070045980A (ko) * 2005-10-28 2007-05-02 스미또모 가가꾸 가부시키가이샤 산 발생제에 적합한 염 및 이를 함유하는 화학증폭형레지스트 조성물
CN101236357B (zh) * 2007-01-30 2012-07-04 住友化学株式会社 化学放大型抗蚀剂组合物
KR101606010B1 (ko) * 2008-04-21 2016-03-24 스미또모 가가꾸 가부시키가이샤 중합체 및 이를 포함하는 화학 증폭형 레지스트 조성물
TWI462938B (zh) * 2008-05-21 2014-12-01 Sumitomo Chemical Co 聚合物及含有該聚合物之化學放大型阻劑組成物
KR20100068083A (ko) * 2008-12-12 2010-06-22 제일모직주식회사 (메트)아크릴레이트 화합물, 감광성 폴리머, 및 레지스트 조성물
TW201030466A (en) * 2008-12-25 2010-08-16 Sumitomo Chemical Co Chemically amplified positive resist composition
JP2012136507A (ja) 2010-11-15 2012-07-19 Rohm & Haas Electronic Materials Llc 塩基反応性光酸発生剤およびこれを含むフォトレジスト
KR101400131B1 (ko) * 2013-02-22 2014-05-27 금호석유화학주식회사 레지스트용 중합체 및 이를 포함하는 레지스트 조성물
WO2014150700A1 (en) 2013-03-15 2014-09-25 E. I. Du Pont De Nemours And Company Polymerization process protection means
CN108132584B (zh) * 2017-12-22 2020-12-08 江苏汉拓光学材料有限公司 一种包含聚对羟基苯乙烯类聚合物和丙烯酸酯共聚物的光刻胶组合物
CN114133483B (zh) * 2021-12-16 2022-11-22 四川华造宏材科技有限公司 含金刚烷结构的丙烯酸酯成膜树脂及光刻胶与制备方法
CN114276317A (zh) * 2021-12-27 2022-04-05 徐州博康信息化学品有限公司 一种含内酯结构的光刻胶树脂单体的制备方法
CN114560768B (zh) * 2022-03-09 2024-03-15 河北凯诺中星科技有限公司 一种193nm光刻胶用丙烯酸酯树脂单体的合成方法

Citations (7)

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EP0663616A2 (en) * 1993-12-28 1995-07-19 Fujitsu Limited Radiation sensitive material and method for forming pattern
US5474872A (en) * 1993-05-31 1995-12-12 Sony Corporation Polyvinyl alcohol-based photoresist
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JPH0973173A (ja) * 1995-06-28 1997-03-18 Fujitsu Ltd レジスト材料及びレジストパターンの形成方法
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EP0856773A1 (en) * 1997-01-29 1998-08-05 Sumitomo Chemical Company, Limited Chemical amplification type positive resist composition
JPH10274852A (ja) * 1997-01-29 1998-10-13 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物

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Patent Citations (8)

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US5474872A (en) * 1993-05-31 1995-12-12 Sony Corporation Polyvinyl alcohol-based photoresist
EP0663616A2 (en) * 1993-12-28 1995-07-19 Fujitsu Limited Radiation sensitive material and method for forming pattern
US5738975A (en) * 1993-12-28 1998-04-14 Nec Corporation Photosensitive resin and method for patterning by use of the same
DE19626003A1 (de) * 1995-06-28 1997-01-02 Fujitsu Ltd Chemisch verstärkte Resist-Zusammensetzungen und Verfahren zur Herstellung von Resist-Mustern
JPH0973173A (ja) * 1995-06-28 1997-03-18 Fujitsu Ltd レジスト材料及びレジストパターンの形成方法
US5968713A (en) * 1995-06-28 1999-10-19 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
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JPH10274852A (ja) * 1997-01-29 1998-10-13 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物

Also Published As

Publication number Publication date
EP0982628A3 (en) 2000-05-03
KR20000017485A (ko) 2000-03-25
CN1190706C (zh) 2005-02-23
DE69933825T2 (de) 2007-08-30
CN1245910A (zh) 2000-03-01
EP0982628B1 (en) 2006-11-02
TW520463B (en) 2003-02-11
DE69933825D1 (de) 2006-12-14
US6239231B1 (en) 2001-05-29
KR100574574B1 (ko) 2006-04-28
EP0982628A2 (en) 2000-03-01

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