SG64481A1 - Plasma treatment method and manufacturing method of semiconductor device - Google Patents

Plasma treatment method and manufacturing method of semiconductor device

Info

Publication number
SG64481A1
SG64481A1 SG1998000516A SG1998000516A SG64481A1 SG 64481 A1 SG64481 A1 SG 64481A1 SG 1998000516 A SG1998000516 A SG 1998000516A SG 1998000516 A SG1998000516 A SG 1998000516A SG 64481 A1 SG64481 A1 SG 64481A1
Authority
SG
Singapore
Prior art keywords
manufacturing
semiconductor device
plasma treatment
treatment method
plasma
Prior art date
Application number
SG1998000516A
Other languages
English (en)
Inventor
Hiroyuki Kitsunai
Nobuo Tsumaki
Shigeru Kakuta
Kazuo Nojiri
Kazue Takahashi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SG64481A1 publication Critical patent/SG64481A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
SG1998000516A 1997-03-19 1998-03-09 Plasma treatment method and manufacturing method of semiconductor device SG64481A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6609997A JP3594759B2 (ja) 1997-03-19 1997-03-19 プラズマ処理方法

Publications (1)

Publication Number Publication Date
SG64481A1 true SG64481A1 (en) 1999-04-27

Family

ID=13306104

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1998000516A SG64481A1 (en) 1997-03-19 1998-03-09 Plasma treatment method and manufacturing method of semiconductor device

Country Status (7)

Country Link
US (1) US6186153B1 (zh)
EP (1) EP0871211A3 (zh)
JP (1) JP3594759B2 (zh)
KR (1) KR100531337B1 (zh)
CN (1) CN1193812A (zh)
SG (1) SG64481A1 (zh)
TW (1) TW410398B (zh)

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JP2000272156A (ja) * 1999-03-26 2000-10-03 Fuji Photo Film Co Ltd カーボン膜の成膜方法
JP3838614B2 (ja) 1999-11-10 2006-10-25 松下電器産業株式会社 半導体装置の製造方法
KR100655217B1 (ko) * 2000-06-27 2006-12-08 삼성전자주식회사 고주파 플라즈마 챔버의 세정 방법
JP2002129334A (ja) * 2000-10-26 2002-05-09 Applied Materials Inc 気相堆積装置のクリーニング方法及び気相堆積装置
JP3332915B1 (ja) * 2001-02-22 2002-10-07 株式会社三幸 セラミックス部材の洗浄方法及び洗浄装置
US6770214B2 (en) * 2001-03-30 2004-08-03 Lam Research Corporation Method of reducing aluminum fluoride deposits in plasma etch reactor
JP3421329B2 (ja) * 2001-06-08 2003-06-30 東京エレクトロン株式会社 薄膜形成装置の洗浄方法
JP2003068705A (ja) * 2001-08-23 2003-03-07 Hitachi Ltd 半導体素子の製造方法
TW508648B (en) * 2001-12-11 2002-11-01 United Microelectronics Corp Method of reducing the chamber particle level
US7326673B2 (en) * 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
US7557073B2 (en) * 2001-12-31 2009-07-07 Advanced Technology Materials, Inc. Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist
US20040011380A1 (en) * 2002-07-18 2004-01-22 Bing Ji Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
JP4196371B2 (ja) * 2002-08-20 2008-12-17 キヤノンアネルバ株式会社 ハロゲンガスの製造方法、ハロゲンガスの製造装置及びハロゲンガスの回収・循環システム
US6863930B2 (en) 2002-09-06 2005-03-08 Delphi Technologies, Inc. Refractory metal mask and methods for coating an article and forming a sensor
US20050072444A1 (en) * 2003-10-03 2005-04-07 Shigeru Shirayone Method for processing plasma processing apparatus
US7055263B2 (en) 2003-11-25 2006-06-06 Air Products And Chemicals, Inc. Method for cleaning deposition chambers for high dielectric constant materials
CN100352013C (zh) * 2004-07-16 2007-11-28 鸿富锦精密工业（深圳）有限公司 干蚀刻后处理方法
GB0516054D0 (en) * 2005-08-04 2005-09-14 Trikon Technologies Ltd A method of processing substrates
US8486198B2 (en) 2005-08-04 2013-07-16 Aviza Technology Limited Method of processing substrates
KR100978407B1 (ko) * 2006-03-06 2010-08-26 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP4776575B2 (ja) * 2007-03-28 2011-09-21 株式会社東芝 表面処理方法、エッチング処理方法および電子デバイスの製造方法
JP5110987B2 (ja) * 2007-07-05 2012-12-26 株式会社日立ハイテクノロジーズ プラズマ処理方法およびコンピュータ読み取り可能な記録媒体
JP2008078678A (ja) * 2007-11-02 2008-04-03 Hitachi Ltd プラズマ処理方法
US20100051577A1 (en) * 2008-09-03 2010-03-04 Micron Technology, Inc. Copper layer processing
JP2012109472A (ja) 2010-11-19 2012-06-07 Hitachi High-Technologies Corp プラズマ処理方法
JP5736820B2 (ja) * 2011-02-15 2015-06-17 富士通株式会社 半導体製造装置の洗浄装置及びそれを用いた半導体装置の製造方法
JP2013030696A (ja) * 2011-07-29 2013-02-07 Ulvac Japan Ltd プラズマエッチング装置、及びプラズマクリーニング方法
JP6854600B2 (ja) * 2016-07-15 2021-04-07 東京エレクトロン株式会社 プラズマエッチング方法、プラズマエッチング装置、および基板載置台

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* Cited by examiner, † Cited by third party
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JP2892694B2 (ja) * 1989-07-31 1999-05-17 株式会社日立製作所 プラズマクリーニング方法
JPH0362550A (ja) * 1989-07-31 1991-03-18 Hitachi Ltd 半導体集積回路
JPH0383335A (ja) * 1989-08-28 1991-04-09 Hitachi Ltd エッチング方法
JPH03130368A (ja) * 1989-09-22 1991-06-04 Applied Materials Inc 半導体ウェーハプロセス装置の洗浄方法
US5085727A (en) * 1990-05-21 1992-02-04 Applied Materials, Inc. Plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection from chemical corrosion
US5108542A (en) * 1990-08-23 1992-04-28 Hewlett Packard Company Selective etching method for tungsten and tungsten alloys
KR100293830B1 (ko) * 1992-06-22 2001-09-17 리차드 에이치. 로브그렌 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법
US5716494A (en) * 1992-06-22 1998-02-10 Matsushita Electric Industrial Co., Ltd. Dry etching method, chemical vapor deposition method, and apparatus for processing semiconductor substrate
JP2865517B2 (ja) * 1993-05-06 1999-03-08 シャープ株式会社 Ｔｉ／ＴｉＮ／Ｗ膜のドライエッチング方法
JPH06349786A (ja) * 1993-06-04 1994-12-22 Fujitsu Ltd 半導体装置の製造方法
US5486235A (en) * 1993-08-09 1996-01-23 Applied Materials, Inc. Plasma dry cleaning of semiconductor processing chambers
JPH07335626A (ja) * 1994-06-10 1995-12-22 Hitachi Ltd プラズマ処理装置およびプラズマ処理方法
JPH0888215A (ja) * 1994-09-19 1996-04-02 Hitachi Ltd 半導体集積回路装置の製造方法
JP2962181B2 (ja) * 1995-02-01 1999-10-12 ヤマハ株式会社 ドライエッチング方法及び装置
JPH08319586A (ja) * 1995-05-24 1996-12-03 Nec Yamagata Ltd 真空処理装置のクリーニング方法
JP3698218B2 (ja) * 1995-08-31 2005-09-21 ピジョン株式会社 搾乳器
US5756400A (en) * 1995-12-08 1998-05-26 Applied Materials, Inc. Method and apparatus for cleaning by-products from plasma chamber surfaces
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber

Also Published As

Publication number Publication date
TW410398B (en) 2000-11-01
EP0871211A3 (en) 1999-12-08
CN1193812A (zh) 1998-09-23
US6186153B1 (en) 2001-02-13
EP0871211A2 (en) 1998-10-14
JPH10261623A (ja) 1998-09-29
KR19980080398A (ko) 1998-11-25
JP3594759B2 (ja) 2004-12-02
KR100531337B1 (ko) 2006-02-28

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