SG47193A1 - Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof - Google Patents

Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof

Info

Publication number
SG47193A1
SG47193A1 SG1996011097A SG1996011097A SG47193A1 SG 47193 A1 SG47193 A1 SG 47193A1 SG 1996011097 A SG1996011097 A SG 1996011097A SG 1996011097 A SG1996011097 A SG 1996011097A SG 47193 A1 SG47193 A1 SG 47193A1
Authority
SG
Singapore
Prior art keywords
fabrication
integrated circuit
circuit device
silicide layer
electrical wiring
Prior art date
Application number
SG1996011097A
Other languages
English (en)
Inventor
Hiromi Todorobaru
Hideo Miura
Masayuki Suzuki
Shinji Nishihara
Shuji Ikeda
Masashi Sahara
Shinichi Ishida
Hiromi Abe
Atushi Ogishima
Hiroyuki Uchiyama
Nee Toda Sonoko Abe
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of SG47193A1 publication Critical patent/SG47193A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7845—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being a conductive material, e.g. silicided S/D or Gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
SG1996011097A 1995-11-14 1996-11-13 Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof SG47193A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP29522095A JP3443219B2 (ja) 1995-11-14 1995-11-14 半導体集積回路装置およびその製造方法
JP03165596A JP3498089B2 (ja) 1995-11-14 1996-02-20 半導体装置

Publications (1)

Publication Number Publication Date
SG47193A1 true SG47193A1 (en) 1998-03-20

Family

ID=26370161

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996011097A SG47193A1 (en) 1995-11-14 1996-11-13 Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof

Country Status (6)

Country Link
US (3) US6031288A (ja)
JP (2) JP3443219B2 (ja)
KR (1) KR100216092B1 (ja)
CN (1) CN1139129C (ja)
MY (1) MY115056A (ja)
SG (1) SG47193A1 (ja)

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US5976976A (en) 1997-08-21 1999-11-02 Micron Technology, Inc. Method of forming titanium silicide and titanium by chemical vapor deposition
JP3919921B2 (ja) 1997-09-26 2007-05-30 三菱電機株式会社 半導体装置
US6329681B1 (en) * 1997-12-18 2001-12-11 Yoshitaka Nakamura Semiconductor integrated circuit device and method of manufacturing the same
KR100470944B1 (ko) * 1997-12-31 2005-07-18 주식회사 하이닉스반도체 반도체소자의비트라인형성방법
JP4931267B2 (ja) * 1998-01-29 2012-05-16 ルネサスエレクトロニクス株式会社 半導体装置
US6284316B1 (en) * 1998-02-25 2001-09-04 Micron Technology, Inc. Chemical vapor deposition of titanium
KR100292943B1 (ko) 1998-03-25 2001-09-17 윤종용 디램장치의제조방법
WO2000017939A1 (fr) * 1998-09-22 2000-03-30 Hitachi, Ltd. Dispositif a semi-conducteur et son procede de production
US6448631B2 (en) * 1998-09-23 2002-09-10 Artisan Components, Inc. Cell architecture with local interconnect and method for making same
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KR100325302B1 (ko) * 1999-06-16 2002-02-21 김영환 반도체 소자의 제조방법
JP3943294B2 (ja) * 1999-08-18 2007-07-11 株式会社ルネサステクノロジ 半導体集積回路装置
US6440850B1 (en) 1999-08-27 2002-08-27 Micron Technology, Inc. Structure for an electrical contact to a thin film in a semiconductor structure and method for making the same
JP4117101B2 (ja) * 2000-08-30 2008-07-16 株式会社ルネサステクノロジ 半導体装置とその製造方法
KR100393971B1 (ko) * 2000-12-29 2003-08-06 주식회사 하이닉스반도체 임베디드 디램 로직의 비트라인 및 그 형성방법
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US7923362B2 (en) * 2005-06-08 2011-04-12 Telefunken Semiconductors Gmbh & Co. Kg Method for manufacturing a metal-semiconductor contact in semiconductor components
DE102005026301B3 (de) * 2005-06-08 2007-01-11 Atmel Germany Gmbh Verfahren zum Herstellen eines Metall- Halbleiter-Kontakts bei Halbleiterbauelementen
KR100799119B1 (ko) * 2005-08-29 2008-01-29 주식회사 하이닉스반도체 반도체메모리소자 제조 방법
KR100750943B1 (ko) * 2006-07-03 2007-08-22 삼성전자주식회사 반도체 장치의 배선 구조물 및 그 형성 방법
DE102007004884A1 (de) * 2007-01-31 2008-08-14 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer Metallschicht über einem strukturierten Dielektrikum durch stromlose Abscheidung unter Anwendung einer selektiv vorgesehenen Aktivierungsschicht
US20080240936A1 (en) * 2007-04-02 2008-10-02 Douglas Kent Ritterling Portable air compressor
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JP5376916B2 (ja) * 2008-11-26 2013-12-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
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TWI423410B (zh) * 2010-12-31 2014-01-11 Au Optronics Corp 金屬導電結構及其製作方法
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JP6648544B2 (ja) * 2016-02-08 2020-02-14 三菱電機株式会社 半導体装置
JP2018152514A (ja) * 2017-03-14 2018-09-27 富士電機株式会社 半導体装置の製造方法および半導体装置
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Also Published As

Publication number Publication date
US6503803B2 (en) 2003-01-07
US6268658B1 (en) 2001-07-31
KR970030370A (ko) 1997-06-26
JPH09139475A (ja) 1997-05-27
MY115056A (en) 2003-03-31
JP3443219B2 (ja) 2003-09-02
US6031288A (en) 2000-02-29
CN1139129C (zh) 2004-02-18
KR100216092B1 (ko) 1999-08-16
CN1161573A (zh) 1997-10-08
JPH09232422A (ja) 1997-09-05
JP3498089B2 (ja) 2004-02-16
US20010023958A1 (en) 2001-09-27

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