SG181227A1 - Measuring method, apparatus and substrate - Google Patents
Measuring method, apparatus and substrate Download PDFInfo
- Publication number
- SG181227A1 SG181227A1 SG2011080736A SG2011080736A SG181227A1 SG 181227 A1 SG181227 A1 SG 181227A1 SG 2011080736 A SG2011080736 A SG 2011080736A SG 2011080736 A SG2011080736 A SG 2011080736A SG 181227 A1 SG181227 A1 SG 181227A1
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- SG
- Singapore
- Prior art keywords
- substrate
- pattern
- sub
- patterns
- mark
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 161
- 238000000034 method Methods 0.000 title claims abstract description 112
- 238000005259 measurement Methods 0.000 claims abstract description 78
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7073—Alignment marks and their environment
- G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41819310P | 2010-11-30 | 2010-11-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG181227A1 true SG181227A1 (en) | 2012-06-28 |
Family
ID=44862738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011080736A SG181227A1 (en) | 2010-11-30 | 2011-11-02 | Measuring method, apparatus and substrate |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US10151987B2 (fr) |
| EP (1) | EP2458441B1 (fr) |
| JP (1) | JP5155436B2 (fr) |
| KR (1) | KR101266035B1 (fr) |
| CN (1) | CN102566301B (fr) |
| SG (1) | SG181227A1 (fr) |
| TW (1) | TWI452441B (fr) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8958898B2 (en) * | 2011-11-07 | 2015-02-17 | Nalco Company | Method and apparatus to monitor and control sheet characteristics on a creping process |
| JP5992103B2 (ja) * | 2012-07-30 | 2016-09-14 | エーエスエムエル ネザーランズ ビー．ブイ． | 位置測定装置、位置測定方法、リソグラフィ装置およびデバイス製造方法 |
| TWI454679B (zh) * | 2012-08-08 | 2014-10-01 | Chroma Ate Inc | Optical detection system and optical property detection method |
| US9506965B2 (en) * | 2012-11-12 | 2016-11-29 | United Microelectronics Corp. | Alternately arranged overlay marks having asymmetric spacing and measurement thereof |
| CN105051611B (zh) | 2013-03-14 | 2017-04-12 | Asml荷兰有限公司 | 图案形成装置、在衬底上生成标记的方法以及器件制造方法 |
| CN104423145B (zh) * | 2013-09-02 | 2019-02-22 | 北大方正集团有限公司 | 掩膜版及显微镜读取关键尺寸的方法 |
| CN103645036B (zh) * | 2013-12-30 | 2017-07-18 | 京东方科技集团股份有限公司 | 摩尔纹测评方法及测评装置 |
| JP5932859B2 (ja) * | 2014-02-18 | 2016-06-08 | キヤノン株式会社 | 検出装置、インプリント装置、および物品の製造方法 |
| CN104950587B (zh) * | 2014-03-25 | 2017-12-29 | 上海微电子装备（集团）股份有限公司 | 曝光装置与曝光方法 |
| CN112331576A (zh) * | 2014-10-03 | 2021-02-05 | 科磊股份有限公司 | 验证计量目标及其设计 |
| US9484188B2 (en) * | 2015-03-11 | 2016-11-01 | Mapper Lithography Ip B.V. | Individual beam pattern placement verification in multiple beam lithography |
| US9864209B2 (en) * | 2015-05-19 | 2018-01-09 | Kla-Tencor Corporation | Self-moire target design principles for measuring unresolved device-like pitches |
| US10534275B2 (en) * | 2015-06-22 | 2020-01-14 | Nova Measuring Instruments Ltd. | Method for use in process control of manufacture of patterned sample |
| CN106933024B (zh) * | 2015-12-30 | 2020-05-01 | 上海微电子装备（集团）股份有限公司 | 一种可检测掩膜弯曲度的光刻系统及检测方法 |
| CN108010855B (zh) | 2016-10-31 | 2020-04-14 | 中芯国际集成电路制造(上海)有限公司 | 用于检测基板上的标记的装置、设备和方法 |
| CN108022847B (zh) | 2016-10-31 | 2020-12-18 | 中芯国际集成电路制造(上海)有限公司 | 用于检测基板上的标记的装置、设备和方法 |
| EP3339959A1 (fr) * | 2016-12-23 | 2018-06-27 | ASML Netherlands B.V. | Procédé de détermination de la position d'un élément |
| TWI730050B (zh) * | 2017-02-15 | 2021-06-11 | 聯華電子股份有限公司 | 層疊對準標記與評估製程穩定度的方法 |
| US10656535B2 (en) * | 2017-03-31 | 2020-05-19 | Imec Vzw | Metrology method for a semiconductor manufacturing process |
| US10473460B2 (en) * | 2017-12-11 | 2019-11-12 | Kla-Tencor Corporation | Overlay measurements of overlapping target structures based on symmetry of scanning electron beam signals |
| US10446367B2 (en) | 2018-03-07 | 2019-10-15 | Kla-Tencor Corporation | Scan strategies to minimize charging effects and radiation damage of charged particle beam metrology system |
| CN112368647B (zh) * | 2018-07-06 | 2024-03-26 | Asml荷兰有限公司 | 位置传感器 |
| EP3637187A1 (fr) * | 2018-10-12 | 2020-04-15 | ASML Netherlands B.V. | Procédé de mesure de performance de mise au point d'un appareil lithographique |
| WO2020159560A1 (fr) * | 2019-01-28 | 2020-08-06 | Kla-Tencor Corporation | Cible de moiré et son procédé d'utilisation dans la mesure d'un mauvais alignement de dispositifs à semi-conducteurs |
| NL2024878A (en) * | 2019-02-19 | 2020-08-27 | Asml Holding Nv | Metrology system, lithographic apparatus, and method |
| WO2020169357A1 (fr) * | 2019-02-21 | 2020-08-27 | Asml Holding N.V. | Alignement de tranche à l'aide de la biréfringence de forme de cibles ou de produit |
| CN113557466A (zh) | 2019-03-25 | 2021-10-26 | 科磊股份有限公司 | 用于计量学中的经改进自叠纹光栅设计 |
| US11073768B2 (en) * | 2019-06-26 | 2021-07-27 | Kla Corporation | Metrology target for scanning metrology |
| JP7418080B2 (ja) * | 2019-10-04 | 2024-01-19 | キヤノン株式会社 | 位置検出装置、位置検出方法、リソグラフィ装置、及び物品の製造方法 |
| JP7369306B2 (ja) * | 2020-04-15 | 2023-10-25 | ケーエルエー コーポレイション | 半導体デバイスの位置ずれを計測する際役立つデバイス規模フィーチャを有する位置ずれターゲット |
| KR20230013039A (ko) * | 2020-05-27 | 2023-01-26 | 에이에스엠엘 네델란즈 비.브이. | 정렬 방법 및 연관된 정렬과 리소그래피 장치 |
| US11967535B2 (en) * | 2021-04-13 | 2024-04-23 | Kla Corporation | On-product overlay targets |
| CN114326325B (zh) * | 2021-12-29 | 2023-12-29 | 长江存储科技有限责任公司 | 套刻标记及其形成方法 |
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| US6034378A (en) * | 1995-02-01 | 2000-03-07 | Nikon Corporation | Method of detecting position of mark on substrate, position detection apparatus using this method, and exposure apparatus using this position detection apparatus |
| US5805290A (en) * | 1996-05-02 | 1998-09-08 | International Business Machines Corporation | Method of optical metrology of unresolved pattern arrays |
| JP3570728B2 (ja) | 1997-03-07 | 2004-09-29 | アーエスエム リソグラフィ ベスローテン フェンノートシャップ | 離軸整列ユニットを持つリトグラフ投射装置 |
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| TW526573B (en) * | 2000-12-27 | 2003-04-01 | Koninkl Philips Electronics Nv | Method of measuring overlay |
| DE60319462T2 (de) | 2002-06-11 | 2009-03-12 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
| US7209235B2 (en) * | 2002-07-11 | 2007-04-24 | Hymite A/S | Accurate positioning of components of a optical assembly |
| SG152898A1 (en) * | 2002-09-20 | 2009-06-29 | Asml Netherlands Bv | Alignment systems and methods for lithographic systems |
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| US7279258B2 (en) * | 2004-03-12 | 2007-10-09 | Infineon Technologies Richmond, Lp | Method and arrangement for controlling focus parameters of an exposure tool |
| JP2006039148A (ja) * | 2004-07-26 | 2006-02-09 | Toshiba Corp | ホトマスク、それを用いたフォーカス測定方法および半導体装置の製造方法 |
| US7791727B2 (en) | 2004-08-16 | 2010-09-07 | Asml Netherlands B.V. | Method and apparatus for angular-resolved spectroscopic lithography characterization |
| US7342641B2 (en) * | 2005-02-22 | 2008-03-11 | Nikon Corporation | Autofocus methods and devices for lithography |
| KR100715280B1 (ko) * | 2005-10-01 | 2007-05-08 | 삼성전자주식회사 | 오버레이 키를 이용하는 오버레이 정밀도 측정 방법 |
| US20070146670A1 (en) * | 2005-12-27 | 2007-06-28 | Asml Netherlands B.V. | Lithographic apparatus, patterning device and device manufacturing method |
| US7818073B2 (en) | 2006-04-20 | 2010-10-19 | Asml Netherlands B.V. | Method for obtaining improved feedforward data, a lithographic apparatus for carrying out the method and a device manufacturing method |
| US7502103B2 (en) | 2006-05-31 | 2009-03-10 | Asml Netherlands B.V. | Metrology tool, system comprising a lithographic apparatus and a metrology tool, and a method for determining a parameter of a substrate |
| US7714981B2 (en) | 2006-10-30 | 2010-05-11 | Asml Netherlands B.V. | Lithographic apparatus and method |
| US7948616B2 (en) * | 2007-04-12 | 2011-05-24 | Nikon Corporation | Measurement method, exposure method and device manufacturing method |
| US8687166B2 (en) | 2007-05-24 | 2014-04-01 | Asml Netherlands B.V. | Lithographic apparatus having an encoder position sensor system |
| TWI383273B (zh) | 2007-11-20 | 2013-01-21 | Asml Netherlands Bv | 微影投射裝置之焦點測量方法及微影投射裝置之校準方法 |
| NL1036476A1 (nl) | 2008-02-01 | 2009-08-04 | Asml Netherlands Bv | Alignment mark and a method of aligning a substrate comprising such an alignment mark. |
| NL1036647A1 (nl) * | 2008-04-16 | 2009-10-19 | Asml Netherlands Bv | A method of measuring a lithographic projection apparatus. |
| NL2003673A (en) | 2008-11-21 | 2010-05-25 | Asml Netherlands Bv | Lithographic apparatus and methods for compensating substrate unflatness, determining the effect of patterning device unflatness, and determing the effect of thermal loads on a patterning device. |
| NL2003785A (en) | 2008-12-09 | 2010-06-10 | Asml Netherlands Bv | Method of forming a marker, substrate having a marker and device manufacturing method. |
| NL2008110A (en) * | 2011-02-18 | 2012-08-21 | Asml Netherlands Bv | Measuring method, measuring apparatus, lithographic apparatus and device manufacturing method. |
-
2011
- 2011-10-27 EP EP11186981.4A patent/EP2458441B1/fr active Active
- 2011-11-02 SG SG2011080736A patent/SG181227A1/en unknown
- 2011-11-18 TW TW100142433A patent/TWI452441B/zh active
- 2011-11-24 JP JP2011255747A patent/JP5155436B2/ja active Active
- 2011-11-29 US US13/306,668 patent/US10151987B2/en active Active
- 2011-11-29 KR KR1020110125729A patent/KR101266035B1/ko active IP Right Grant
- 2011-11-29 CN CN201110387956.8A patent/CN102566301B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012146959A (ja) | 2012-08-02 |
| KR20120059412A (ko) | 2012-06-08 |
| US10151987B2 (en) | 2018-12-11 |
| CN102566301A (zh) | 2012-07-11 |
| TW201232193A (en) | 2012-08-01 |
| TWI452441B (zh) | 2014-09-11 |
| US20120133938A1 (en) | 2012-05-31 |
| EP2458441A2 (fr) | 2012-05-30 |
| KR101266035B1 (ko) | 2013-05-21 |
| JP5155436B2 (ja) | 2013-03-06 |
| CN102566301B (zh) | 2015-09-23 |
| EP2458441A3 (fr) | 2017-08-23 |
| EP2458441B1 (fr) | 2022-01-19 |
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