SG157354A1 - Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios - Google Patents

Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios

Info

Publication number
SG157354A1
SG157354A1 SG200907175-4A SG2009071754A SG157354A1 SG 157354 A1 SG157354 A1 SG 157354A1 SG 2009071754 A SG2009071754 A SG 2009071754A SG 157354 A1 SG157354 A1 SG 157354A1
Authority
SG
Singapore
Prior art keywords
polishing composition
silicon oxide
silicon nitride
removal rate
oxide removal
Prior art date
Application number
SG200907175-4A
Other languages
English (en)
Inventor
Phillip Carter
Timothy Johns
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of SG157354A1 publication Critical patent/SG157354A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG200907175-4A 2004-11-05 2005-10-21 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios SG157354A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/982,486 US7504044B2 (en) 2004-11-05 2004-11-05 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios

Publications (1)

Publication Number Publication Date
SG157354A1 true SG157354A1 (en) 2009-12-29

Family

ID=35840203

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200907175-4A SG157354A1 (en) 2004-11-05 2005-10-21 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios

Country Status (10)

Country Link
US (2) US7504044B2 (ko)
EP (1) EP1831321B1 (ko)
JP (1) JP5102040B2 (ko)
KR (1) KR101117401B1 (ko)
CN (1) CN101065458B (ko)
IL (1) IL182797A (ko)
MY (2) MY149519A (ko)
SG (1) SG157354A1 (ko)
TW (1) TWI323274B (ko)
WO (1) WO2006052433A2 (ko)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7582127B2 (en) * 2004-06-16 2009-09-01 Cabot Microelectronics Corporation Polishing composition for a tungsten-containing substrate
US7531105B2 (en) * 2004-11-05 2009-05-12 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
US20060213126A1 (en) * 2005-03-28 2006-09-28 Cho Yun J Method for preparing a polishing slurry having high dispersion stability
JP2007012943A (ja) * 2005-06-30 2007-01-18 Toshiba Corp 基板処理方法
CN101375376B (zh) * 2006-01-31 2012-09-19 日立化成工业株式会社 绝缘膜研磨用cmp研磨剂、研磨方法、通过该研磨方法研磨的半导体电子部件
US20080182413A1 (en) * 2006-08-16 2008-07-31 Menk Gregory E Selective chemistry for fixed abrasive cmp
US9129907B2 (en) * 2006-09-08 2015-09-08 Cabot Microelectronics Corporation Onium-containing CMP compositions and methods of use thereof
US20080125018A1 (en) * 2006-11-27 2008-05-29 United Microelectronics Corp. Solution for fixed abrasive chemical mechanical polishing process and fixed abrasive chemical mechanical polishing method
US20090047870A1 (en) * 2007-08-16 2009-02-19 Dupont Air Products Nanomaterials Llc Reverse Shallow Trench Isolation Process
US7803711B2 (en) * 2007-09-18 2010-09-28 Cabot Microelectronics Corporation Low pH barrier slurry based on titanium dioxide
JP5519507B2 (ja) * 2007-09-21 2014-06-11 キャボット マイクロエレクトロニクス コーポレイション アミノシランを用いて処理した研磨剤粒子を利用する研磨組成物および研磨方法
US20090090696A1 (en) * 2007-10-08 2009-04-09 Cabot Microelectronics Corporation Slurries for polishing oxide and nitride with high removal rates
JP5375025B2 (ja) * 2008-02-27 2013-12-25 日立化成株式会社 研磨液
CN103396765A (zh) 2008-04-23 2013-11-20 日立化成工业株式会社 研磨剂及使用该研磨剂的基板研磨方法
TW201038690A (en) * 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
US9548211B2 (en) * 2008-12-04 2017-01-17 Cabot Microelectronics Corporation Method to selectively polish silicon carbide films
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
US8022025B1 (en) 2010-01-27 2011-09-20 Nanophase Technologies Corporation Heterocoagulate, and compositions and method for polishing and surface treatment
SG182790A1 (en) * 2010-02-01 2012-09-27 Jsr Corp Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method using same
WO2012032469A1 (en) * 2010-09-08 2012-03-15 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrate materials for electrical, mechanical and optical devices
EP2428541B1 (en) * 2010-09-08 2019-03-06 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
CN102477260B (zh) * 2010-11-26 2014-12-03 安集微电子（上海）有限公司 一种化学机械抛光液
US20120190200A1 (en) * 2011-01-24 2012-07-26 Clarkson University Abrasive Free Silicon Chemical Mechanical Planarization
EP2518120A1 (en) * 2011-04-28 2012-10-31 Basf Se A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine
WO2012127398A1 (en) 2011-03-22 2012-09-27 Basf Se A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine
US8808573B2 (en) * 2011-04-15 2014-08-19 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US20140154884A1 (en) * 2011-05-24 2014-06-05 Kuraray Co., Ltd. Erosion inhibitor for chemical mechanical polishing, slurry for chemical mechanical polishing, and chemical mechanical polishing method
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
JP6272842B2 (ja) * 2012-06-11 2018-01-31 キャボット マイクロエレクトロニクス コーポレイション モリブデン研磨のための組成物および方法
US9633863B2 (en) * 2012-07-11 2017-04-25 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
CN103831706B (zh) * 2012-11-27 2018-02-09 安集微电子（上海）有限公司 一种化学机械抛光工艺
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
US9850402B2 (en) 2013-12-09 2017-12-26 Cabot Microelectronics Corporation CMP compositions and methods for selective removal of silicon nitride
US9583359B2 (en) 2014-04-04 2017-02-28 Fujifilm Planar Solutions, LLC Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
FR3023558B1 (fr) * 2014-07-10 2016-07-08 Isp Investments Inc Utilisation d’un homopolymere amine pour l’encapsulation d’ingredients, procede de synthese d’un homopolymere d’aema, et procede d’encapsulation d’ingredients
US9758697B2 (en) * 2015-03-05 2017-09-12 Cabot Microelectronics Corporation Polishing composition containing cationic polymer additive
US9597768B1 (en) * 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
KR101715931B1 (ko) * 2015-12-11 2017-03-14 주식회사 케이씨텍 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물
KR20170076191A (ko) * 2015-12-24 2017-07-04 주식회사 케이씨텍 연마입자-분산층 복합체 및 그를 포함하는 연마 슬러리 조성물
TWI631197B (zh) * 2016-01-25 2018-08-01 卡博特微電子公司 含陽離子聚合物添加劑之拋光組合物
KR101827366B1 (ko) * 2016-05-16 2018-02-09 주식회사 케이씨텍 고단차 연마용 슬러리 조성물
CN108117839B (zh) * 2016-11-29 2021-09-17 安集微电子科技（上海）股份有限公司 一种具有高氮化硅选择性的化学机械抛光液
CN108117838B (zh) * 2016-11-29 2021-09-17 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
CN108117840B (zh) * 2016-11-29 2021-09-21 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
US10221336B2 (en) 2017-06-16 2019-03-05 rohm and Hass Electronic Materials CMP Holdings, Inc. Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them
US10316218B2 (en) 2017-08-30 2019-06-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them
US10508221B2 (en) 2017-09-28 2019-12-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them
US10711158B2 (en) 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US10428241B2 (en) 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
US20190185713A1 (en) * 2017-12-14 2019-06-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp slurry compositions containing silica with trimethylsulfoxonium cations
KR102500452B1 (ko) * 2018-03-27 2023-02-16 후지필름 가부시키가이샤 연마액, 화학적 기계적 연마 방법
KR102258296B1 (ko) * 2018-08-31 2021-06-01 주식회사 이엔에프테크놀로지 실리콘 질화막 식각 조성물
KR20200032601A (ko) * 2018-09-18 2020-03-26 주식회사 케이씨텍 연마용 슬러리 조성물
US10968366B2 (en) 2018-12-04 2021-04-06 Cmc Materials, Inc. Composition and method for metal CMP
KR20220087494A (ko) * 2019-10-22 2022-06-24 씨엠씨 머티리얼즈, 인코포레이티드 유전체 cmp를 위한 조성물 및 방법
JP2022553347A (ja) * 2019-10-22 2022-12-22 シーエムシー マテリアルズ，インコーポレイティド 酸化ケイ素に比べて窒化ケイ素およびポリシリコンについて高い選択性を有する研磨組成物および方法
CN113004796A (zh) * 2019-12-19 2021-06-22 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
KR102316237B1 (ko) 2019-12-19 2021-10-25 주식회사 케이씨텍 멀티선택비 구현이 가능한 연마용 슬러리 조성물
KR20240018644A (ko) * 2021-06-10 2024-02-13 버슘머트리얼즈 유에스, 엘엘씨 화학적 기계적 평탄화 슬러리용 첨가제로서의 포스포늄 기반 중합체 및 공중합체
US20230242791A1 (en) * 2022-02-03 2023-08-03 Cmc Materials, Inc. Ceria-based slurry compositions for selective and nonselective cmp of silicon oxide, silicon nitride, and polysilicon

Family Cites Families (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166150A (en) 1977-12-23 1979-08-28 Scott Paper Company Release sheet with dried and cured coating composition
US4528384A (en) 1980-06-30 1985-07-09 The Dow Chemical Company Addition polymerizable aromatic sulfonium salts and polymers thereof
US5981454A (en) 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
US6546939B1 (en) 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US5393469A (en) 1992-03-20 1995-02-28 Lumigen, Inc. Polymeric phosphonium salts providing enhanced chemiluminescence from 1,2-dioxetanes
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5389352A (en) 1993-07-21 1995-02-14 Rodel, Inc. Oxide particles and method for producing them
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
TW274625B (ko) 1994-09-30 1996-04-21 Hitachi Seisakusyo Kk
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5614444A (en) 1995-06-06 1997-03-25 Sematech, Inc. Method of using additives with silica-based slurries to enhance selectivity in metal CMP
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5958794A (en) 1995-09-22 1999-09-28 Minnesota Mining And Manufacturing Company Method of modifying an exposed surface of a semiconductor wafer
US5858813A (en) 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US5876490A (en) 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
US6648733B2 (en) 1997-04-04 2003-11-18 Rodel Holdings, Inc. Polishing pads and methods relating thereto
ATE227194T1 (de) 1997-04-18 2002-11-15 Cabot Microelectronics Corp Polierkissen fur einen halbleitersubstrat
US6126532A (en) 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
US6054183A (en) 1997-07-10 2000-04-25 Zimmer; Jerry W. Method for making CVD diamond coated substrate for polishing pad conditioning head
US5972192A (en) 1997-07-23 1999-10-26 Advanced Micro Devices, Inc. Pulse electroplating copper or copper alloys
TW510917B (en) * 1998-02-24 2002-11-21 Showa Denko Kk Abrasive composition for polishing semiconductor device and method for manufacturing semiconductor device using same
WO1999054527A2 (en) 1998-04-21 1999-10-28 Applied Materials, Inc. Electro-chemical deposition system and method of electroplating on substrates
US6533832B2 (en) 1998-06-26 2003-03-18 Cabot Microelectronics Corporation Chemical mechanical polishing slurry and method for using same
CZ20004852A3 (cs) 1998-06-29 2001-08-15 The Procter & Gamble Company Zařízení pro manipulaci a odstranění odpadních látek
US6326309B2 (en) * 1998-06-30 2001-12-04 Fujitsu Limited Semiconductor device manufacturing method
US6117000A (en) 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
US6787471B2 (en) 1998-08-26 2004-09-07 Renesas Technology Corp. Method of manufacturing a semiconductor device
JP2000109816A (ja) * 1998-10-05 2000-04-18 Okamoto Machine Tool Works Ltd 研磨剤スラリ−の調製方法
JP4053165B2 (ja) 1998-12-01 2008-02-27 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
CN1337923A (zh) 1999-01-15 2002-02-27 纳尔科化学公司 用于从半导体废水中同时沉淀多种金属离子以提高微滤器工作效率的合成物和方法
JP3443358B2 (ja) * 1999-03-24 2003-09-02 シャープ株式会社 半導体装置の製造方法
US6221119B1 (en) 1999-07-14 2001-04-24 Komag, Inc. Slurry composition for polishing a glass ceramic substrate
US6855266B1 (en) 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
US6258140B1 (en) * 1999-09-27 2001-07-10 Fujimi America Inc. Polishing composition
US6503418B2 (en) 1999-11-04 2003-01-07 Advanced Micro Devices, Inc. Ta barrier slurry containing an organic additive
US6720264B2 (en) 1999-11-04 2004-04-13 Advanced Micro Devices, Inc. Prevention of precipitation defects on copper interconnects during CMP by use of solutions containing organic compounds with silica adsorption and copper corrosion inhibiting properties
US6294470B1 (en) 1999-12-22 2001-09-25 International Business Machines Corporation Slurry-less chemical-mechanical polishing
US6364744B1 (en) 2000-02-02 2002-04-02 Agere Systems Guardian Corp. CMP system and slurry for polishing semiconductor wafers and related method
JP2002031867A (ja) 2000-05-08 2002-01-31 Fuji Photo Film Co Ltd ハロゲン化銀カラー写真感光材料の処理方法
JP2001350240A (ja) 2000-06-08 2001-12-21 Fuji Photo Film Co Ltd ハロゲン化銀写真感光材料およびその画像形成方法
JP2001350236A (ja) 2000-06-09 2001-12-21 Fuji Photo Film Co Ltd ハロゲン化銀カラー写真感光材料の処理方法
US6524168B2 (en) 2000-06-15 2003-02-25 Rodel Holdings, Inc Composition and method for polishing semiconductors
JP2002075927A (ja) 2000-08-24 2002-03-15 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
TWI281493B (en) * 2000-10-06 2007-05-21 Mitsui Mining & Smelting Co Polishing material
US6623355B2 (en) 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
JP3816743B2 (ja) 2000-11-24 2006-08-30 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP3768401B2 (ja) 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US6676718B2 (en) 2001-01-12 2004-01-13 Rodel Holdings, Inc. Polishing of semiconductor substrates
US6612911B2 (en) * 2001-01-16 2003-09-02 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
US6670285B2 (en) 2001-03-14 2003-12-30 International Business Machines Corporation Nitrogen-containing polymers as porogens in the preparation of highly porous, low dielectric constant materials
US6685983B2 (en) 2001-03-14 2004-02-03 International Business Machines Corporation Defect-free dielectric coatings and preparation thereof using polymeric nitrogenous porogens
JP2002296734A (ja) 2001-03-29 2002-10-09 Fuji Photo Film Co Ltd ハロゲン化銀写真感光材料およびそれを用いた画像形成方法
US6485355B1 (en) 2001-06-22 2002-11-26 International Business Machines Corporation Method to increase removal rate of oxide using fixed-abrasive
US6689554B2 (en) 2001-08-01 2004-02-10 Fuji Photo Film Co., Ltd. Silver handle emulsion and silver halide photographic lightsensitive material
MY133305A (en) 2001-08-21 2007-11-30 Kao Corp Polishing composition
US7004819B2 (en) * 2002-01-18 2006-02-28 Cabot Microelectronics Corporation CMP systems and methods utilizing amine-containing polymers
JP4187497B2 (ja) * 2002-01-25 2008-11-26 Ｊｓｒ株式会社 半導体基板の化学機械研磨方法
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
AU2003255874A1 (en) * 2002-08-16 2004-03-03 Orchid Health Care, A Division Of Orchid Chemicals And Pharmaceuticals Ltd. Sustained release pharmaceutical composition of a cephalosporin antibiotic
US6866793B2 (en) * 2002-09-26 2005-03-15 University Of Florida Research Foundation, Inc. High selectivity and high planarity dielectric polishing
US7005382B2 (en) * 2002-10-31 2006-02-28 Jsr Corporation Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing
TW200424299A (en) * 2002-12-26 2004-11-16 Kao Corp Polishing composition
JP2004273547A (ja) * 2003-03-05 2004-09-30 Kao Corp 研磨速度選択比向上剤
JP4267348B2 (ja) * 2003-03-05 2009-05-27 花王株式会社 研磨基板の製造方法
US7044836B2 (en) * 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
US7160807B2 (en) 2003-06-30 2007-01-09 Cabot Microelectronics Corporation CMP of noble metals
TWI291987B (en) * 2003-07-04 2008-01-01 Jsr Corp Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
US7037351B2 (en) 2003-07-09 2006-05-02 Dynea Chemicals Oy Non-polymeric organic particles for chemical mechanical planarization
US20050263407A1 (en) 2004-05-28 2005-12-01 Cabot Microelectronics Corporation Electrochemical-mechanical polishing composition and method for using the same
US7247567B2 (en) 2004-06-16 2007-07-24 Cabot Microelectronics Corporation Method of polishing a tungsten-containing substrate
US7524347B2 (en) 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant

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US20090137124A1 (en) 2009-05-28
US7504044B2 (en) 2009-03-17
MY149519A (en) 2013-09-13
MY160422A (en) 2017-03-15
CN101065458A (zh) 2007-10-31
TW200630472A (en) 2006-09-01
US7846842B2 (en) 2010-12-07
IL182797A0 (en) 2007-08-19
EP1831321B1 (en) 2015-06-24
KR20070085738A (ko) 2007-08-27
IL182797A (en) 2011-08-31
WO2006052433A2 (en) 2006-05-18
JP2008519466A (ja) 2008-06-05
EP1831321A2 (en) 2007-09-12
WO2006052433A3 (en) 2006-08-31
TWI323274B (en) 2010-04-11
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US20060099814A1 (en) 2006-05-11
CN101065458B (zh) 2012-09-05

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