SG150508A1 - Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof - Google Patents

Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof

Info

Publication number
SG150508A1
SG150508A1 SG200900977-0A SG2009009770A SG150508A1 SG 150508 A1 SG150508 A1 SG 150508A1 SG 2009009770 A SG2009009770 A SG 2009009770A SG 150508 A1 SG150508 A1 SG 150508A1
Authority
SG
Singapore
Prior art keywords
microelectronic
derivatives
salts
composition containing
cleaning composition
Prior art date
Application number
SG200900977-0A
Other languages
English (en)
Inventor
Chien-Pin Sherman Hsu
Original Assignee
Mallinckrodt Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mallinckrodt Baker Inc filed Critical Mallinckrodt Baker Inc
Publication of SG150508A1 publication Critical patent/SG150508A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
SG200900977-0A 2004-02-11 2004-11-05 Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof SG150508A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54380104P 2004-02-11 2004-02-11

Publications (1)

Publication Number Publication Date
SG150508A1 true SG150508A1 (en) 2009-03-30

Family

ID=34700209

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200900977-0A SG150508A1 (en) 2004-02-11 2004-11-05 Microelectronic cleaning composition containing halogen oxygen acids, salts and derivatives thereof

Country Status (19)

Country Link
US (1) US7521406B2 (pl)
EP (1) EP1564595B1 (pl)
JP (3) JP4208826B2 (pl)
KR (2) KR101316993B1 (pl)
CN (3) CN101833251B (pl)
AT (1) ATE449362T1 (pl)
BR (1) BRPI0418529A (pl)
CA (1) CA2555665C (pl)
DE (1) DE602005017684D1 (pl)
DK (1) DK1564595T3 (pl)
ES (1) ES2334359T3 (pl)
IL (1) IL177305A (pl)
NO (1) NO20064056L (pl)
PL (1) PL1564595T3 (pl)
PT (1) PT1564595E (pl)
SG (1) SG150508A1 (pl)
TW (1) TWI318238B (pl)
WO (1) WO2005083523A1 (pl)
ZA (1) ZA200606544B (pl)

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EP2850495A4 (en) * 2012-05-18 2016-01-20 Entegris Inc COMPOSITION AND METHOD FOR REMOVING PHOTOLACK FROM A SURFACE WITH TITANNITRIDE
JP6157081B2 (ja) * 2012-09-24 2017-07-05 東京応化工業株式会社 フォトリソグラフィ用剥離液、及びパターン形成方法
JP6029419B2 (ja) * 2012-11-02 2016-11-24 ダイキン工業株式会社 半導体ドライプロセス後の残渣除去液及びそれを用いた残渣除去方法
CN103809394B (zh) * 2012-11-12 2019-12-31 安集微电子科技（上海）股份有限公司 一种去除光阻蚀刻残留物的清洗液
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Also Published As

Publication number Publication date
EP1564595A3 (en) 2007-06-27
EP1564595A2 (en) 2005-08-17
CA2555665A1 (en) 2005-09-09
DE602005017684D1 (de) 2009-12-31
CN101923294A (zh) 2010-12-22
JP2008124494A (ja) 2008-05-29
ATE449362T1 (de) 2009-12-15
DK1564595T3 (da) 2010-01-18
CN1954267A (zh) 2007-04-25
PT1564595E (pt) 2009-12-23
BRPI0418529A (pt) 2007-05-15
PL1564595T3 (pl) 2010-06-30
US20050176603A1 (en) 2005-08-11
ZA200606544B (en) 2009-07-29
JP2008156654A (ja) 2008-07-10
JP4393553B2 (ja) 2010-01-06
JP4208826B2 (ja) 2009-01-14
TWI318238B (en) 2009-12-11
ES2334359T3 (es) 2010-03-09
IL177305A (en) 2011-06-30
CN101923294B (zh) 2013-12-04
TW200526774A (en) 2005-08-16
CA2555665C (en) 2012-10-02
KR20130086326A (ko) 2013-08-01
US7521406B2 (en) 2009-04-21
JP2005227749A (ja) 2005-08-25
CN1954267B (zh) 2010-12-08
EP1564595B1 (en) 2009-11-18
WO2005083523A1 (en) 2005-09-09
KR101316993B1 (ko) 2013-10-11
CN101833251B (zh) 2013-11-13
CN101833251A (zh) 2010-09-15
NO20064056L (no) 2006-11-07
IL177305A0 (en) 2006-12-10
KR20050081155A (ko) 2005-08-18

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