SG149772A1 - Method for polishing a substrate composed of semiconductor material - Google Patents
Method for polishing a substrate composed of semiconductor materialInfo
- Publication number
- SG149772A1 SG149772A1 SG200805356-3A SG2008053563A SG149772A1 SG 149772 A1 SG149772 A1 SG 149772A1 SG 2008053563 A SG2008053563 A SG 2008053563A SG 149772 A1 SG149772 A1 SG 149772A1
- Authority
- SG
- Singapore
- Prior art keywords
- polishing
- substrate
- semiconductor material
- polishing pad
- substrate composed
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title abstract 15
- 239000000758 substrate Substances 0.000 title abstract 7
- 239000000463 material Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000003082 abrasive agent Substances 0.000 abstract 3
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 239000002002 slurry Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007035266A DE102007035266B4 (de) | 2007-07-27 | 2007-07-27 | Verfahren zum Polieren eines Substrates aus Silicium oder einer Legierung aus Silicium und Germanium |
Publications (1)
Publication Number | Publication Date |
---|---|
SG149772A1 true SG149772A1 (en) | 2009-02-27 |
Family
ID=40157304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200805356-3A SG149772A1 (en) | 2007-07-27 | 2008-07-18 | Method for polishing a substrate composed of semiconductor material |
Country Status (7)
Country | Link |
---|---|
US (1) | US8647985B2 (zh) |
JP (2) | JP5121612B2 (zh) |
KR (1) | KR100979737B1 (zh) |
CN (1) | CN101355032B (zh) |
DE (1) | DE102007035266B4 (zh) |
SG (1) | SG149772A1 (zh) |
TW (1) | TWI470684B (zh) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008053610B4 (de) | 2008-10-29 | 2011-03-31 | Siltronic Ag | Verfahren zum beidseitigen Polieren einer Halbleiterscheibe |
US8338301B1 (en) * | 2008-11-06 | 2012-12-25 | Stc.Unm | Slurry-free chemical mechanical planarization (CMP) of engineered germanium-on-silicon wafers |
DE102008059044B4 (de) | 2008-11-26 | 2013-08-22 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht |
DE102009025242B4 (de) | 2009-06-17 | 2013-05-23 | Siltronic Ag | Verfahren zum beidseitigen chemischen Schleifen einer Halbleiterscheibe |
DE102009025243B4 (de) | 2009-06-17 | 2011-11-17 | Siltronic Ag | Verfahren zur Herstellung und Verfahren zur Bearbeitung einer Halbleiterscheibe aus Silicium |
DE102009030292B4 (de) * | 2009-06-24 | 2011-12-01 | Siltronic Ag | Verfahren zum beidseitigen Polieren einer Halbleiterscheibe |
DE102009030294B4 (de) * | 2009-06-24 | 2013-04-25 | Siltronic Ag | Verfahren zur Politur der Kante einer Halbleiterscheibe |
DE102009030297B3 (de) * | 2009-06-24 | 2011-01-20 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
DE102009030296B4 (de) * | 2009-06-24 | 2013-05-08 | Siltronic Ag | Verfahren zur Herstellung einer epitaxierten Siliciumscheibe |
DE102009030295B4 (de) * | 2009-06-24 | 2014-05-08 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
DE102009030298B4 (de) * | 2009-06-24 | 2012-07-12 | Siltronic Ag | Verfahren zur lokalen Politur einer Halbleiterscheibe |
JP5795461B2 (ja) | 2009-08-19 | 2015-10-14 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
DE102009038941B4 (de) | 2009-08-26 | 2013-03-21 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
DE102009047926A1 (de) * | 2009-10-01 | 2011-04-14 | Siltronic Ag | Verfahren zum Polieren von Halbleiterscheiben |
DE102009051008B4 (de) | 2009-10-28 | 2013-05-23 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
DE102009051007B4 (de) | 2009-10-28 | 2011-12-22 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
DE102009052744B4 (de) | 2009-11-11 | 2013-08-29 | Siltronic Ag | Verfahren zur Politur einer Halbleiterscheibe |
DE102009057593A1 (de) | 2009-12-09 | 2011-06-16 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
DE102010005904B4 (de) | 2010-01-27 | 2012-11-22 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
DE102010010885B4 (de) | 2010-03-10 | 2017-06-08 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
DE102010013519B4 (de) | 2010-03-31 | 2012-12-27 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
DE102010013520B4 (de) * | 2010-03-31 | 2013-02-07 | Siltronic Ag | Verfahren zur beidseitigen Politur einer Halbleiterscheibe |
DE102010014874A1 (de) | 2010-04-14 | 2011-10-20 | Siltronic Ag | Verfahren zur Herstellung einer Halbleiterscheibe |
KR101836879B1 (ko) * | 2010-04-28 | 2018-03-09 | 가부시키가이샤 바이코우스키 쟈판 | 사파이어 연마용 슬러리 및, 사파이어의 연마 방법 |
DE102010026352A1 (de) * | 2010-05-05 | 2011-11-10 | Siltronic Ag | Verfahren zur gleichzeitigen beidseitigen Material abtragenden Bearbeitung einer Halbleiterscheibe |
DE102010024040A1 (de) | 2010-06-16 | 2011-12-22 | Siltronic Ag | Verfahren zur Politur einer Halbleiterscheibe |
DE102011082777A1 (de) | 2011-09-15 | 2012-02-09 | Siltronic Ag | Verfahren zum beidseitigen Polieren einer Halbleiterscheibe |
KR102028217B1 (ko) | 2011-11-25 | 2019-10-02 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
DE102011089362B4 (de) | 2011-12-21 | 2014-01-16 | Siltronic Ag | Verfahren zum Polieren eines Substrates aus Halbleitermaterial |
DE102012201516A1 (de) | 2012-02-02 | 2013-08-08 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
US20150060400A1 (en) * | 2012-04-18 | 2015-03-05 | Fujimi Incorporated | Polishing composition |
DE102012214998B4 (de) | 2012-08-23 | 2014-07-24 | Siltronic Ag | Verfahren zum beidseitigen Bearbeiten einer Halbleiterscheibe |
DE102012218745A1 (de) | 2012-10-15 | 2014-04-17 | Siltronic Ag | Verfahren zum beidseitigen Bearbeiten einer Halbleiterscheibe |
DE102013204839A1 (de) | 2013-03-19 | 2014-09-25 | Siltronic Ag | Verfahren zum Polieren einer Scheibe aus Halbleitermaterial |
DE102013205448A1 (de) | 2013-03-27 | 2014-10-16 | Siltronic Ag | Verfahren zum Polieren eines Substrates aus Halbleitermaterial |
DE102013213838A1 (de) | 2013-07-15 | 2014-09-25 | Siltronic Ag | Verfahren zum Polieren eines Substrates aus Halbleitermaterial |
JP6259723B2 (ja) * | 2014-06-18 | 2018-01-10 | 株式会社フジミインコーポレーテッド | シリコンウェーハの研磨方法、研磨用組成物および研磨用組成物セット |
CN107014653A (zh) * | 2017-04-18 | 2017-08-04 | 西华大学 | 检测用高硅铝合金样品及其制备方法 |
WO2018198718A1 (ja) * | 2017-04-28 | 2018-11-01 | Jx金属株式会社 | 半導体ウエハ及び半導体ウエハの研磨方法 |
US11415971B2 (en) | 2020-02-10 | 2022-08-16 | Globalwafers Co., Ltd. | Systems and methods for enhanced wafer manufacturing |
CN117431013B (zh) * | 2023-12-21 | 2024-04-26 | 芯越微电子材料(嘉兴)有限公司 | 一种化学机械抛光液及抛光方法 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5152917B1 (en) | 1991-02-06 | 1998-01-13 | Minnesota Mining & Mfg | Structured abrasive article |
EP0779655A3 (en) * | 1995-12-14 | 1997-07-16 | International Business Machines Corporation | A method of chemically-mechanically polishing an electronic component |
US5624303A (en) * | 1996-01-22 | 1997-04-29 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
JP2000315665A (ja) | 1999-04-29 | 2000-11-14 | Ebara Corp | 研磨方法及び装置 |
JPH1052816A (ja) * | 1996-08-13 | 1998-02-24 | M Ii M C Kk | ワイヤ式切断方法 |
US5876268A (en) * | 1997-01-03 | 1999-03-02 | Minnesota Mining And Manufacturing Company | Method and article for the production of optical quality surfaces on glass |
US5897426A (en) * | 1998-04-24 | 1999-04-27 | Applied Materials, Inc. | Chemical mechanical polishing with multiple polishing pads |
KR20010039590A (ko) * | 1999-04-29 | 2001-05-15 | 마에다 시게루 | 작업대상물을 폴리싱하는 방법 및 장치 |
US6261157B1 (en) | 1999-05-25 | 2001-07-17 | Applied Materials, Inc. | Selective damascene chemical mechanical polishing |
US6509269B2 (en) * | 1999-10-19 | 2003-01-21 | Applied Materials, Inc. | Elimination of pad glazing for Al CMP |
JP3439402B2 (ja) | 1999-11-05 | 2003-08-25 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP3841995B2 (ja) * | 1999-12-28 | 2006-11-08 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
JP3869608B2 (ja) * | 2000-01-25 | 2007-01-17 | Necエレクトロニクス株式会社 | 防食剤 |
DE10004578C1 (de) | 2000-02-03 | 2001-07-26 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Halbleiterscheibe mit polierter Kante |
JP2001291720A (ja) | 2000-04-05 | 2001-10-19 | Hitachi Ltd | 半導体集積回路装置および半導体集積回路装置の製造方法 |
US6387289B1 (en) * | 2000-05-04 | 2002-05-14 | Micron Technology, Inc. | Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
JP3993369B2 (ja) * | 2000-07-14 | 2007-10-17 | 株式会社東芝 | 半導体装置の製造方法 |
JP3617665B2 (ja) * | 2001-01-29 | 2005-02-09 | 三菱住友シリコン株式会社 | 半導体ウェーハ用研磨布 |
US7104869B2 (en) * | 2001-07-13 | 2006-09-12 | Applied Materials, Inc. | Barrier removal at low polish pressure |
DE10159833C1 (de) | 2001-12-06 | 2003-06-18 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer Vielzahl von Halbleiterscheiben |
JP2005525244A (ja) * | 2002-01-17 | 2005-08-25 | エイエスエム・ナトゥール・インコーポレーテッド | 瞬鋭なる終点検出を用いた高等な化学機械的研磨システム |
JP2003260663A (ja) | 2002-03-07 | 2003-09-16 | Ebara Corp | ポリッシング装置及びポリッシング方法 |
US20040127045A1 (en) * | 2002-09-12 | 2004-07-01 | Gorantla Venkata R. K. | Chemical mechanical planarization of wafers or films using fixed polishing pads and a nanoparticle composition |
JP4345357B2 (ja) * | 2003-05-27 | 2009-10-14 | 株式会社Sumco | 半導体ウェーハの製造方法 |
JP2004356336A (ja) * | 2003-05-28 | 2004-12-16 | Sumitomo Mitsubishi Silicon Corp | 半導体ウェーハの両面研磨方法 |
US7968465B2 (en) * | 2003-08-14 | 2011-06-28 | Dupont Air Products Nanomaterials Llc | Periodic acid compositions for polishing ruthenium/low K substrates |
US20050227590A1 (en) | 2004-04-09 | 2005-10-13 | Chien-Min Sung | Fixed abrasive tools and associated methods |
US7210988B2 (en) * | 2004-08-24 | 2007-05-01 | Applied Materials, Inc. | Method and apparatus for reduced wear polishing pad conditioning |
JP4759298B2 (ja) | 2005-03-30 | 2011-08-31 | 株式会社フジミインコーポレーテッド | 単結晶表面用の研磨剤及び研磨方法 |
JP4820108B2 (ja) | 2005-04-25 | 2011-11-24 | コマツNtc株式会社 | 半導体ウエーハの製造方法およびワークのスライス方法ならびにそれらに用いられるワイヤソー |
US7229873B2 (en) * | 2005-08-10 | 2007-06-12 | Texas Instruments Incorporated | Process for manufacturing dual work function metal gates in a microelectronics device |
JP2007095840A (ja) | 2005-09-27 | 2007-04-12 | Fujifilm Corp | 化学的機械的研磨方法 |
JP2007103515A (ja) * | 2005-09-30 | 2007-04-19 | Fujimi Inc | 研磨方法 |
DE102007019565A1 (de) * | 2007-04-25 | 2008-09-04 | Siltronic Ag | Verfahren zum einseitigen Polieren von Halbleiterscheiben und Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht |
-
2007
- 2007-07-27 DE DE102007035266A patent/DE102007035266B4/de not_active Expired - Fee Related
-
2008
- 2008-06-24 KR KR1020080059607A patent/KR100979737B1/ko active IP Right Grant
- 2008-07-02 US US12/166,486 patent/US8647985B2/en not_active Expired - Fee Related
- 2008-07-16 JP JP2008184841A patent/JP5121612B2/ja not_active Expired - Fee Related
- 2008-07-18 SG SG200805356-3A patent/SG149772A1/en unknown
- 2008-07-23 TW TW97127951A patent/TWI470684B/zh not_active IP Right Cessation
- 2008-07-24 CN CN2008101300563A patent/CN101355032B/zh not_active Expired - Fee Related
-
2011
- 2011-11-14 JP JP2011248831A patent/JP5453378B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2012060149A (ja) | 2012-03-22 |
TW200905737A (en) | 2009-02-01 |
DE102007035266B4 (de) | 2010-03-25 |
JP5453378B2 (ja) | 2014-03-26 |
US20090029552A1 (en) | 2009-01-29 |
CN101355032A (zh) | 2009-01-28 |
JP5121612B2 (ja) | 2013-01-16 |
US8647985B2 (en) | 2014-02-11 |
JP2009033159A (ja) | 2009-02-12 |
TWI470684B (zh) | 2015-01-21 |
DE102007035266A1 (de) | 2009-01-29 |
KR20090012053A (ko) | 2009-02-02 |
CN101355032B (zh) | 2010-12-01 |
KR100979737B1 (ko) | 2010-09-07 |
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