SG146599A1 - Lithographic apparatus and method - Google Patents

Lithographic apparatus and method

Info

Publication number
SG146599A1
SG146599A1 SG200802531-4A SG2008025314A SG146599A1 SG 146599 A1 SG146599 A1 SG 146599A1 SG 2008025314 A SG2008025314 A SG 2008025314A SG 146599 A1 SG146599 A1 SG 146599A1
Authority
SG
Singapore
Prior art keywords
radiation
radiation beam
illumination mode
patterned
individually controllable
Prior art date
Application number
SG200802531-4A
Other languages
English (en)
Inventor
Heine Melle Mulder
Johannes Jacobus Matheus Baselmans
Adrianus Franciscus Petrus Engelen
Markus Franciscus Antonius Eurlings
Greevenbroek Hendrikus Robertus Marie Van
Patricius Aloysius Jacobus Tinnemans
Van Der Veen Paul
Wilfred Edward Endendijk
Original Assignee
Asml Netherlands B V 22 30 74
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands B V 22 30 74 filed Critical Asml Netherlands B V 22 30 74
Publication of SG146599A1 publication Critical patent/SG146599A1/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2057—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
SG200802531-4A 2007-03-30 2008-03-31 Lithographic apparatus and method SG146599A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/729,960 US8937706B2 (en) 2007-03-30 2007-03-30 Lithographic apparatus and method

Publications (1)

Publication Number Publication Date
SG146599A1 true SG146599A1 (en) 2008-10-30

Family

ID=39545019

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200802531-4A SG146599A1 (en) 2007-03-30 2008-03-31 Lithographic apparatus and method

Country Status (7)

Country Link
US (1) US8937706B2 (zh)
EP (2) EP1975724B1 (zh)
JP (2) JP4712062B2 (zh)
KR (1) KR100940583B1 (zh)
CN (2) CN102122117B (zh)
SG (1) SG146599A1 (zh)
TW (1) TWI470363B (zh)

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KR101646814B1 (ko) * 2009-03-19 2016-08-08 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 노광 장치의 조명 시스템
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US8757823B2 (en) * 2009-06-30 2014-06-24 Asml Netherlands B.V. Mountings for rotation of array of reflective elements and lithographic apparatus incorporating same
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JP2011077142A (ja) * 2009-09-29 2011-04-14 Nikon Corp 照明光学装置、露光装置及びデバイス製造方法
WO2011060975A1 (en) * 2009-11-18 2011-05-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5598733B2 (ja) 2009-12-23 2014-10-01 株式会社ニコン 空間光変調ユニット、照明光学系、露光装置、およびデバイス製造方法
DE102010030089A1 (de) * 2010-06-15 2011-12-15 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikro-Lithografie sowie Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
US20120064460A1 (en) * 2010-09-07 2012-03-15 Nikon Corporation Movable body apparatus, object processing device, exposure apparatus, flat-panel display manufacturing method, and device manufacturing method
NL2008009A (en) 2011-02-02 2012-08-06 Asml Netherlands Bv Illumination system, lithographic apparatus and method.
US9568831B2 (en) 2012-01-17 2017-02-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2013145132A1 (ja) * 2012-03-27 2013-10-03 パイオニア株式会社 半導体発光素子用の測定装置
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Also Published As

Publication number Publication date
CN102122117B (zh) 2013-08-28
EP1975724A1 (en) 2008-10-01
CN102122117A (zh) 2011-07-13
TWI470363B (zh) 2015-01-21
US20080239268A1 (en) 2008-10-02
CN101276154B (zh) 2011-04-20
JP2011109128A (ja) 2011-06-02
JP5537455B2 (ja) 2014-07-02
EP2328028B1 (en) 2016-02-10
JP4712062B2 (ja) 2011-06-29
KR20080089198A (ko) 2008-10-06
KR100940583B1 (ko) 2010-02-04
TW200900874A (en) 2009-01-01
CN101276154A (zh) 2008-10-01
EP1975724B1 (en) 2017-01-11
JP2008258605A (ja) 2008-10-23
US8937706B2 (en) 2015-01-20
EP2328028A1 (en) 2011-06-01

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