EP2219206A4 - Control device, exposure method, and exposure device - Google Patents

Control device, exposure method, and exposure device

Info

Publication number
EP2219206A4
EP2219206A4 EP08846902A EP08846902A EP2219206A4 EP 2219206 A4 EP2219206 A4 EP 2219206A4 EP 08846902 A EP08846902 A EP 08846902A EP 08846902 A EP08846902 A EP 08846902A EP 2219206 A4 EP2219206 A4 EP 2219206A4
Authority
EP
European Patent Office
Prior art keywords
exposure
control device
exposure method
control
exposure device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP08846902A
Other languages
German (de)
French (fr)
Other versions
EP2219206A1 (en
Inventor
Soichi Owa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of EP2219206A1 publication Critical patent/EP2219206A1/en
Publication of EP2219206A4 publication Critical patent/EP2219206A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70191Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/702Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70283Mask effects on the imaging process
    • G03F7/70291Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70141Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
EP08846902A 2007-11-06 2008-10-27 Control device, exposure method, and exposure device Withdrawn EP2219206A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007289090 2007-11-06
PCT/JP2008/069455 WO2009060745A1 (en) 2007-11-06 2008-10-27 Control device, exposure method, and exposure device

Publications (2)

Publication Number Publication Date
EP2219206A1 EP2219206A1 (en) 2010-08-18
EP2219206A4 true EP2219206A4 (en) 2011-04-27

Family

ID=40588415

Family Applications (1)

Application Number Title Priority Date Filing Date
EP08846902A Withdrawn EP2219206A4 (en) 2007-11-06 2008-10-27 Control device, exposure method, and exposure device

Country Status (6)

Country Link
US (5) US8792081B2 (en)
EP (1) EP2219206A4 (en)
JP (2) JP5418230B2 (en)
KR (1) KR101708943B1 (en)
TW (1) TW200933307A (en)
WO (1) WO2009060745A1 (en)

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JP6558528B2 (en) * 2015-03-30 2019-08-14 株式会社ニコン Spatial light modulator and method of using the same, modulation method, exposure method and apparatus, and device manufacturing method
DE102015212658A1 (en) * 2015-07-07 2017-01-12 Carl Zeiss Smt Gmbh LITHOGRAPHIC APPARATUS AND METHOD FOR OPERATING A LITHOGRAPHIC APPARATUS
US10840103B2 (en) 2015-11-23 2020-11-17 Nikon Corporation Forced grid method for correcting mask patterns for a pattern transfer apparatus
JP6676941B2 (en) * 2015-12-01 2020-04-08 株式会社ニコン Control apparatus and control method, exposure apparatus and exposure method, device manufacturing method, data generation method, and program
DE102015224522B4 (en) * 2015-12-08 2018-06-21 Carl Zeiss Smt Gmbh Illumination system of a microlithographic projection system and method for operating such a system
CN110431486B (en) 2017-03-16 2022-03-15 株式会社尼康 Control device and control method, exposure device and exposure method, device manufacturing method, data generation method, and computer-readable medium
JP7260959B2 (en) * 2018-03-16 2023-04-19 キヤノン株式会社 Lithographic apparatus, illumination apparatus and method of manufacturing an article
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Also Published As

Publication number Publication date
JP5418230B2 (en) 2014-02-19
US10261421B2 (en) 2019-04-16
US20170090300A1 (en) 2017-03-30
US8792081B2 (en) 2014-07-29
EP2219206A1 (en) 2010-08-18
US20090117494A1 (en) 2009-05-07
WO2009060745A1 (en) 2009-05-14
US20160124314A1 (en) 2016-05-05
KR20100103498A (en) 2010-09-27
US20180203363A1 (en) 2018-07-19
US20140313501A1 (en) 2014-10-23
KR101708943B1 (en) 2017-02-21
JP2014042073A (en) 2014-03-06
TW200933307A (en) 2009-08-01
US9551942B2 (en) 2017-01-24
US9946162B2 (en) 2018-04-17
US9268235B2 (en) 2016-02-23
JPWO2009060745A1 (en) 2011-03-24
JP5673785B2 (en) 2015-02-18

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