JP6676941B2 - Control apparatus and control method, exposure apparatus and exposure method, device manufacturing method, data generation method, and program - Google Patents

Description

  Control device and control method for determining respective states of a plurality of optical elements included in a spatial light modulator, exposure apparatus and exposure method using this control method, device manufacturing method using this exposure method, and spatial light modulator The present invention relates to a data generation method for generating control data, and a technical field of a program for executing the control method or the data generation method.

  There has been proposed an exposure apparatus including a spatial light modulator (SLM) having a plurality of optical elements (for example, micromirrors) each capable of reflecting incident light instead of a mask (Patent Document 1). reference). Further, an exposure apparatus including a spatial light modulator having a plurality of optical elements (for example, liquid crystal elements) that can transmit incident light has also been proposed (see Patent Document 1).

WO 2006/083685 pamphlet

  The first aspect is a control method for controlling a spatial light modulator which is used in an apparatus for transferring a pattern to an object and includes first and second optical elements each of which can change its state, and which is adjacent to each other. Obtaining the characteristics of light obtained by combining light that enters the gap between the first and second optical elements and is emitted from the gap, and light that has passed through the first optical element. Setting the state of the first optical element using the characteristics of the combined light.

  A second aspect is a control method of the spatial light modulator, which sets a state of each of a plurality of optical elements included in the spatial light modulator that modulates and emits incident light, wherein Obtaining an optical characteristic value indicating an optical characteristic of a predetermined portion including the first portion where the optical surface of the first optical element is located, and setting the state of each of the plurality of optical elements using the optical characteristic value Wherein the predetermined portion is located between the first optical element and a second optical element adjacent to the first optical element and does not constitute the plurality of optical elements, a second portion, A first part in which the optical surface of the first optical element is located.

  A third aspect is an exposure method for exposing a pattern to an object, wherein the state of a plurality of optical elements of the spatial light modulator is set using the control method according to the first or second aspect. And irradiating the spatial light modulator with exposure light, and exposing a pattern on the object with light passing through the spatial light modulator.

  In a fourth aspect, the object is exposed to a predetermined pattern using the exposure method according to the third aspect, and the object on which the predetermined pattern has been transferred is developed to correspond to the predetermined pattern. A device manufacturing method, comprising: forming a mask layer having a desired shape on the surface of the object; and processing the surface of the object via the mask layer.

  A fifth aspect is an exposure apparatus that exposes a pattern to an object, and includes a spatial light modulator including first and second optical elements each of which can be changed in state, and a light that passes through the spatial light modulator. A projection optical system that projects the pattern onto the object, light that enters the gap between the first and second optical elements that are arranged adjacent to each other and exits from the gap, and light that passes through the first optical element. And a control unit that controls the spatial light modulator, wherein the control unit controls the spatial light modulator, and the control unit uses the calculated characteristics of the combined light, This is an exposure apparatus that sets the state of the first optical element.

  A sixth aspect is a device manufacturing method, comprising exposing a predetermined pattern to the object using the exposure apparatus according to the fifth aspect, and developing the object onto which the predetermined pattern has been transferred. A device manufacturing apparatus including: forming a mask layer having a shape corresponding to the predetermined pattern on a surface of the object; and processing the surface of the object via the mask layer.

  A seventh aspect is a lithography system for forming a pattern on a substrate, comprising: a spatial light modulator including first and second optical elements each of which can be changed in state; and a light transmitted through the spatial light modulator. An exposure apparatus including a projection optical system that projects the pattern onto the object, and a data generation apparatus that generates drive data for driving the spatial light modulator of the exposure apparatus, wherein the data generation apparatuses are adjacent to each other. A calculating unit that calculates a characteristic of light obtained by combining light that enters the gap between the first and second optical elements and is emitted from the gap and light that has passed through the first optical element. A lithography system for setting a state of the first optical element using the calculated characteristics of the combined light.

  An eighth aspect is a data generation method for generating drive data for driving a spatial light modulator including first and second optical elements each of which is capable of changing a state, wherein the first and second optical elements are arranged adjacent to each other. Calculating the characteristics of light that is obtained by combining light that enters the gap between the first and second optical elements and exits from the gap and light that has passed through the first optical element; and calculating the calculated combined light. Setting a state of the first optical element using characteristics of light.

  A ninth aspect is a program that causes a computer that controls a spatial light modulator including first and second optical elements whose states can be changed to execute processing for setting the states of the first and second optical elements. A characteristic of light obtained by combining light that enters the gap between the first and second optical elements disposed adjacent to each other and is emitted from the gap, and light that has passed through the first optical element. And calculating the state of the first optical element using the calculated characteristics of the combined light.

  The operation and other advantages of the above aspect will be apparent from embodiments to be described below.

FIG. 1 is a side view showing an example of the structure of the exposure apparatus of the present embodiment. FIG. 2A is a plan view showing the structure of the light modulation surface of the spatial light modulator, and FIG. 2B is a perspective view showing a part of the structure of the light modulation surface of the spatial light modulator. FIG. 2C is a perspective view showing the configuration of one mirror element of the spatial light modulator, and FIG. 2D is a side view showing two possible states of the mirror element included in the spatial light modulator. FIG. FIG. 3A is a plan view showing an example of a movement path of an exposure area on the surface of a wafer, and FIGS. 3B and 3C each show an example of a state distribution of a plurality of mirror elements. FIG. FIG. 4A is a block diagram showing the structure of the pattern design device, and FIGS. 4B and 4C are block diagrams showing examples of the installation positions of the pattern design device. FIG. 5 is a flowchart showing the flow of the pattern design operation performed by the pattern design device. FIGS. 6A and 6B are plan views each showing a mirror group that defines a first specific example of design variables related to the spatial light modulator. FIG. 7A is a side view showing a basic structure of a simulation model of the spatial light modulator, and FIGS. 7B and 7C are simulation models used for specifying the reflection amplitude, respectively. It is a side view which shows an example of a. FIGS. 8A and 8B are graphs showing the reflectivity of two mirror elements adjacent to each other along the Y-axis direction and a mirror group including a gap located between the two mirror elements. is there. FIG. 9A is a graph showing the reflection amplitude expressed on a complex plane, and FIGS. 9B to 9D are used to specify the reflection amplitude expressed by a complex number. FIG. 4 is a plan view showing an example of a mirror group obtained. FIGS. 10A and 10B each include two mirror elements adjacent along the Y-axis direction and a gap adjacent to the two mirror elements and located between the two mirror elements. It is a graph which shows the reflectance of a mirror group. FIGS. 11A to 11D are plan views each showing a mirror group that defines a fourth specific example of a design variable related to the spatial light modulator. FIG. 12A is a plan view showing a mirror group that defines a fifth specific example of a design variable related to the spatial light modulator, and FIG. 12B is a plan view showing four mirror elements constituting the mirror group. It is a table | surface which shows the combination of the state which can be taken. FIG. 13 is a plan view showing a mirror group that defines a sixth specific example of the design variable related to the spatial light modulator. FIG. 14 is a plan view showing a state distribution of a plurality of mirror elements provided in the spatial light modulator. FIG. 15 is a flowchart showing a method for manufacturing a micro device.

  Hereinafter, a control device and a control method, an exposure apparatus and an exposure method, a device manufacturing method, a data generation method, and a program according to an embodiment will be described with reference to the drawings. However, the present invention is not limited to the embodiments described below.

  In the following description, the positional relationship of various components constituting the exposure apparatus will be described using an XYZ orthogonal coordinate system defined by mutually orthogonal X, Y, and Z axes. In the following description, for convenience of explanation, each of the X-axis direction and the Y-axis direction is a horizontal direction (that is, a predetermined direction in a horizontal plane), and the Z-axis direction is a vertical direction (that is, a direction orthogonal to the horizontal plane). And substantially in the vertical direction). In addition, rotation directions (in other words, tilt directions) around the X axis, the Y axis, and the Z axis are referred to as θX direction, θY direction, and θZ direction, respectively.

(1) Exposure apparatus 1
The exposure apparatus 1 of the present embodiment will be described with reference to FIGS.

(1-1) Structure of Exposure Apparatus 1 First, the structure of the exposure apparatus 1 of the present embodiment will be described with reference to FIG. FIG. 1 is a side view showing an example of the structure of the exposure apparatus 1 of the present embodiment.

  As shown in FIG. 1, the exposure apparatus 1 includes a light source 11, an illumination optical system 12, a mirror 13, a spatial light modulator (SLM) 14, a projection optical system 15, a wafer stage 16, , A controller 17.

  The light source 11 is controlled by the controller 17 and emits the exposure light EL1. The light source 11 emits pulsed light that repeats blinking at a predetermined frequency as the exposure light EL1. That is, the light source 11 emits pulsed light emitted at a predetermined frequency for a predetermined light emission time (hereinafter, the light emission time is referred to as “pulse width”). For example, the light source 11 may emit pulsed light having a pulse width of 50 ns at a frequency of 4 kHz to 6 kHz. The exposure light EL1 pulsed from the light source 11 may be ArF excimer laser light having a wavelength of 193 nm.

  The illumination optical system 12 includes, as disclosed in, for example, US Pat. No. 8,792,081, an illuminance uniforming optical system having an optical integrator such as a fly-eye lens or a rod-type integrator, and an illumination field stop (any of them). (Not shown). The illumination optical system 12 equalizes the amount of exposure light from the light source 11 and emits the same as exposure light EL2. The light modulation surface 14a of the spatial light modulator 14 is illuminated by the exposure light EL2. A rectangular illumination area defined by an illumination field stop (masking system) of the illumination optical system 12 is formed on the light modulation surface 14a of the spatial light modulator.

  Note that the illumination optical system 12 may include a beam intensity distribution changing unit that changes the intensity distribution of the exposure light EL2 on the light modulation surface 14a.

  The mirror 13 deflects the exposure light EL2 output from the illumination optical system 12 and guides the exposure light EL2 to the light modulation surface 14a of the spatial light modulator 14.

  The spatial light modulator 14 includes a plurality of two-dimensionally arranged mirror elements 141 as described later. Here, the surface on which the plurality of mirror elements 141 are arranged is referred to as a light modulation surface 14a. The light modulation surface 14a is irradiated with exposure light EL2 propagating from the illumination optical system 12 via the mirror 13. The light modulation surface 14a is a plane parallel to the XY plane and intersects the traveling direction of the exposure light EL2. The light modulation surface 14a has a rectangular shape. The exposure light EL2 illuminates the light modulation surface 14a with a substantially uniform illuminance distribution.

  The spatial light modulator 14 reflects the exposure light EL2 applied to the light modulation surface 14a of the spatial light modulator 14 toward the projection optical system 15. When reflecting the exposure light EL2, the spatial light modulator 14 spatially modulates the exposure light EL2 according to the device pattern to be transferred to the wafer 161. Here, “spatially modulates light” refers to the amplitude (intensity) of the light, the phase of the light, the polarization state of the light, the wavelength of the light, and the traveling direction of the light (in other words, in a cross section transverse to the traveling direction of the light) , Deflection state) may be changed. In the present embodiment, the spatial light modulator 14 is a reflective spatial light modulator.

  Next, the spatial light modulator 14 will be further described with reference to FIGS. 2A to 2C. FIG. 2A is a plan view showing the structure of the light modulation surface 14 a of the spatial light modulator 14. FIG. 2B is a perspective view showing a partial structure of the light modulation surface 14 a of the spatial light modulator 14. FIG. 2C is a side view showing two possible states of the mirror element 141 of the spatial light modulator 14.

  As shown in FIGS. 2A and 2B, the spatial light modulator 14 includes a plurality of mirror elements 141. FIG. 2B is a drawing in which a part of the plurality of mirror elements 141 shown in FIG. 2A is extracted in consideration of the legibility of the drawing. The plurality of mirror elements 141 are arranged in a two-dimensional array (in other words, in a matrix) on an XY plane that is a plane parallel to the light modulation surface 14a. For example, the number of arrangements of the plurality of mirror elements 141 along the Y-axis direction is hundreds to thousands. For example, the number of mirror elements 141 arranged along the X-axis direction is several times to several tens of the number of mirror elements 141 arranged along the Y-axis direction. An example of the number of mirror elements 141 arranged along the Y-axis direction is hundreds to thousands. The plurality of mirror elements 141 are arranged so as to be separated from each other at a predetermined arrangement interval px along the X-axis direction and at a predetermined arrangement interval py along the Y-axis direction. An example of the arrangement interval px is, for example, from 10 micrometers to 1 micrometer. An example of the arrangement interval py is, for example, from 10 micrometers to 1 micrometer.

  Each mirror element 141 has a square shape. The size of each mirror element 141 in the X-axis direction and the Y-axis direction is smaller than the above-described arrangement intervals px and py, respectively, because the position and / or orientation of each mirror element 141 is changed. That is, the gap 142 that does not constitute the mirror element 141 exists between two mirror elements 141 adjacent along the X-axis direction and between two mirror elements 141 adjacent along the Y-axis direction. Conversely, considering changes in the position and / or orientation of each mirror element 141, the size of each mirror element 141 in the X-axis direction and the Y-axis direction is the same as the above-described arrangement intervals px and py, respectively (that is, It is presumed that it is technically difficult to manufacture each mirror element 141 such that there is no gap 142). Therefore, in the following, description will be made using the spatial light modulator 14 in which the size of each mirror element 141 in the X-axis direction and the Y-axis direction is smaller than the above-described arrangement intervals px and py, respectively. However, the shape and size of each mirror element 141 may be arbitrary (for example, the size of each mirror element 141 in the X-axis direction and the Y-axis direction may be substantially the same as the arrangement intervals px and py described above). Good).

  The surface of each mirror element 141 irradiated with the exposure light EL2 is a reflection surface 141a that reflects the exposure light EL2. Of the two surfaces parallel to the XY plane of each mirror element 141, the surface located on the −Z direction side is a reflection surface 141a. For example, a reflective film is formed on the reflective surface 141a. As the reflection film of the reflection surface 141a, for example, a metal film or a dielectric multilayer film may be used. A set of the reflecting surfaces 141a of the plurality of mirror elements 141 is substantially a light modulating surface 14a irradiated with the exposure light EL2.

  As shown in FIG. 2C, each mirror element 141 of the spatial light modulator 14 is connected to a hinge 144 by a first connection member 143. The hinge 144 has flexibility that can bend in the Z-axis direction by using elastic deformation. The hinge 144 is supported by a pair of posts 145 provided on the support substrate 142. In addition, the hinge portion 144 is provided with a second connection portion 147 that connects the hinge portion 144 with the anchor portion 146 that is subjected to an electrostatic force (attraction or repulsion) by an electrode 148 described later. Thus, the anchor part 146 and the mirror element 141 are mechanically connected via the first connection member 143 and the second connection member 17 and the hinge part 144. An electrode 148 is formed on the surface of the support substrate 149. The number of the post portions 145 is not limited to one pair, and may be two or more.

  When a predetermined voltage is applied to the electrode 148, an electrostatic force acts between the back surface of the anchor portion 146 and the electrode 148. As described above, when an electrostatic force acts between the back surface of the anchor portion 146 and the electrode 148, the anchor portion 146 moves toward the support substrate 149, and the mirror element 141 also moves toward the support substrate 149 along with this movement. I do.

  The state of each mirror element 141 is along a direction orthogonal to the reflection surface 141a (that is, the Z-axis direction) due to an electrostatic force acting between the anchor portion 146 and the electrode 148 and an elastic force of the hinge portion 144. It switches between two states with different positions. For example, as shown on the left side of FIG. 2D, when no electrostatic force acts between the anchor part 146 and the electrode 148 (that is, when the hinge part 144 is not bent), each mirror element 141 is a first state in which the reflection surface 141a of each mirror element 141 matches the reference plane A1. For example, as shown on the right side of FIG. 2D, when an electrostatic force is acting between the anchor part 146 and the electrode 148 (that is, when the hinge part 144 is bent), each mirror element The state 141 is a second state in which the reflecting surface 141a of each mirror element 141 coincides with the displacement plane A2 shifted by the distance d1 from the reference plane A1 toward the + Z direction side.

  The reflecting surface 141a of the mirror element 141 in the second state is located at a position shifted from the reflecting surface 141a of the mirror element 141 in the first state by the distance d1 toward the + Z direction. Therefore, the phase of the wavefront of the exposure light EL3 obtained by the mirror element 141 in the second state reflecting the exposure light EL2 and the phase of the wavefront of the exposure light EL3 obtained by reflecting the exposure light EL2 in the first state are obtained. It is different from the phase of the wavefront of the exposure light EL3. This phase difference corresponds to a length twice the distance d1. In the present embodiment, the distance d1 is equal to １ ／ of the wavelength λ of the exposure light EL1. That is, d1 is represented by the mathematical expression d1 = λ / 4. In this case, the phase of the wavefront of the exposure light EL3 obtained by the mirror element 141 in the second state reflecting the exposure light EL2 is obtained by the mirror element 141 in the first state reflecting the exposure light EL2. It differs by 180 degrees (π radians) from the phase of the wavefront of the exposure light EL3. In the following, the first state is referred to as “0 state” and the second state is referred to as “π state” for convenience of description.

  The spatial light modulator 14 controls the states of the plurality of mirror elements 141 according to the device pattern to be transferred to the wafer 161 under the control of the controller 17. More specifically, the pattern design apparatus 2 (see FIG. 4A and the like), which will be described in detail later, distributes the state of the plurality of mirror elements 141 (in other words, the array) in accordance with the device pattern to be transferred to the wafer 161. ). For example, the pattern design apparatus 2 determines the distribution of states of the plurality of mirror elements 141 by determining whether each of the plurality of mirror elements 141 should be in the 0 state or the π state. Thus, the phase distribution of the exposure light EL3 reflected by the plurality of mirror elements 141 on a plane orthogonal to (or intersecting) the traveling direction of the exposure light EL3 is determined. The controller 17 acquires, from the pattern design device 2, modulation pattern information that defines the distribution of states of the plurality of mirror elements 141. The controller 17 controls the states of the plurality of mirror elements 141 based on the modulation pattern information.

  An example of such a spatial light modulator 14 is described, for example, in U.S. Patent Application Publication No. 2013/0222271, which is incorporated herein by reference.

  In FIG. 1 again, the projection optical system 15 projects a light-dark pattern on the wafer 161 with the exposure light EL3 spatially modulated by the spatial light modulator 14. The projection optical system 15 projects a light-dark pattern corresponding to the spatial modulation by the spatial light modulator on the surface of the wafer 161 (specifically, the surface of the resist film applied to the wafer 161) with the exposure light EL3.

  The projection optical system 15 projects the exposure light EL3 onto a planar exposure area ELA set on the surface of the wafer 161. That is, the projection optical system 15 projects the exposure light EL3 onto the exposure area ELA such that the planar exposure area ELA set on the surface of the wafer 161 is exposed by the exposure light EL3. The optical axis AX of the projection optical system 15 is orthogonal to the planar exposure area ELA. The planar exposure area ELA is formed at a position off the optical axis AX of the projection optical system 15. A predetermined area deviating from a portion where the surface of the wafer 161 coincides with the optical axis AX of the projection optical system 15 is a planar exposure area ELA.

  The projection optical system 15 projects the exposure light EL3 having a phase distribution based on the device pattern onto the surface of the wafer 161 as a spatial image having an intensity distribution according to the phase distribution.

  The projection optical system 15 is a reduction system. In the present embodiment, the projection magnification of the projection optical system 15 is 1/200 as an example. The resolution of the projection optical system 15 in the present embodiment is set to be larger than a value obtained by multiplying the size of each mirror element 141 of the spatial light modulator 14 (the dimension of one side of each mirror element) by the projection magnification. I have. Therefore, the exposure light EL3 reflected by the single mirror element 141 is not resolved on the exposure area ELA. Note that the projection magnification of the projection optical system is not limited to a reduction magnification of 1/200, and may be, for example, a reduction magnification of 1/400, an equal magnification, or an enlargement magnification.

  The wafer stage 16 can hold the wafer 161 and can release the held wafer 161. The wafer stage 16 is movable along a plane (for example, an XY plane) including the exposure area ELA while holding the wafer 161 under the control of the controller 17. The wafer stage 16 is movable along at least one of the X-axis direction, the Y-axis direction, the Z-axis direction, the θX direction, the θY direction, and the θZ direction. For example, the wafer stage 16 may be moved by the operation of a stage drive system 162 including a planar motor. An example of a stage drive system 162 that includes a planar motor is disclosed, for example, in US Pat. No. 6,452,292, which is incorporated herein by reference. However, the stage drive system 162 may include another motor (for example, a linear motor) in addition to or instead of the planar motor.

  The position of the wafer stage 16 in the XY plane (however, it may include a rotation angle along at least one of the θX direction, the θY direction, and the θZ direction) is set to, for example, 0.1 mm by the laser interferometer 163. It is always measured with a resolution of about 25 nm. The measurement result of the laser interferometer 163 is output to the controller 17. However, exposure apparatus 1 may include, in addition to or instead of laser interferometer 163, another measuring device (for example, an encoder) that can measure the position of wafer stage 16 in the XY plane.

  The controller 17 controls the operation of the recording system 1. The controller 17 may include, for example, a CPU (Central Processing Unit) and a memory. For example, the controller 17 controls the emission operation of the exposure light EL1 by the light source 11. Specifically, the controller 17 controls the light source 11 so as to emit pulse light having a predetermined pulse width and emitting light at a predetermined frequency as exposure light EL1 at an appropriate timing. Further, the controller 17 controls a spatial modulation operation of the exposure light EL2 by the spatial light modulator 14. Specifically, the controller 17 controls the states of the plurality of mirror elements 141 based on the modulation pattern information obtained from the pattern design device 2. Further, the controller 17 controls the movement of the wafer stage 16. Specifically, the controller 17 controls the stage drive system 161 so that the exposure area ELA relatively moves on the surface of the wafer 161 through a desired movement path.

  The illumination optical system 12 may adjust the exposure light EL1 so that the exposure light EL2 is irradiated on a part of the light modulation surface 14a. The illumination optical system 12 may adjust the exposure light EL1 such that the irradiation area on the light modulation surface 14a where the exposure light EL2 is irradiated is smaller than the light modulation surface 14a. The illumination optical system 12 may adjust the exposure light EL1 such that the shape of the irradiation area irradiated with the exposure light EL1 on the light modulation surface 14a does not match the shape of the light modulation surface 14a. The illumination optical system 12 may change the intensity distribution of the exposure light EL2 in the beam cross section to make the illuminance distribution of the exposure light EL2 reaching the light modulation surface 14a substantially uniform. In this case, the illumination optical system 12 may include a beam intensity distribution changing unit arranged on the optical path on the emission side of the optical integrator included in the illumination optical system 12.

  In addition to or instead of controlling the phase distribution of the exposure light EL3, the spatial light modulator 14 extends along the intensity distribution of the exposure light EL3 (that is, along the direction orthogonal (or intersecting) with the traveling direction of the exposure light EL3). May be controlled. The spatial light modulator 14 may include an arbitrary device (for example, a liquid crystal panel or the like) capable of spatially modulating the exposure light EL2 instead of the plurality of mirror elements 141.

  The spatial light modulator 14 in the above-described example is a phase-type (piston-type) spatial light modulation including a plurality of mirror elements 141 whose positions along the vertical direction (that is, the traveling direction of the exposure light EL2) are variable. It is a vessel. However, the spatial light modulator 14 may be an inclined spatial light modulator including a plurality of mirror elements each of which can be tilted (for example, tiltable with respect to the X axis or the Y axis). In addition, the spatial light modulator 14 may be a phase-step tilt mirror type spatial light modulator in which a step is provided on the reflection surface of a plurality of mirror elements provided in the tilt type spatial light modulator. The spatial light modulator of the phase-step tilt mirror type has a position between light reflected by the reflection surface 141a parallel to the light modulation surface 14a and light reflected by the reflection surface 141a inclined with respect to the light modulation surface 14a. This is a spatial light modulator that sets the phase difference to λ / 2 (180 degrees (π radians)). Also disclosed in WO 2014/104001, incorporated herein by reference, are a plurality of mirror elements, each having a variable vertical position, and a position between the plurality of mirror elements. And a spatial light modulator that spatially modulates light intensity by vertically moving a mirror.

(1-2) Operation of Exposure Apparatus 1 Next, the operation of the exposure apparatus 1 of the present embodiment (particularly, the exposure operation) will be described with reference to FIGS. 3A to 3C. FIG. 3A is a plan view showing an example of the movement path of the exposure area ELA on the surface of the wafer 161. FIGS. 3B and 3C are plan views each showing an example of a state distribution of the plurality of mirror elements 141. FIG.

  First, the exposure apparatus 1 loads the wafer 161. In other words, the wafer 161 (that is, the wafer 161 coated with the resist) is mounted on the wafer stage 16. After that, the exposure apparatus 1 exposes the wafer 161.

  As shown in FIG. 3A, the exposure light EL3 is applied to a planar exposure area ELA set on the surface of the wafer 161. The exposure light EL3 exposes the exposure area ELA. The exposure area ELA is exposed by one or more pulse emission of the pulse light that is the exposure light EL3. As a result, the exposure light EL3 is applied to the exposure target surface 110 which is at least a part of the surface of the wafer 161 that overlaps the exposure region ELA.

  The wafer stage 16 moves so that the exposure area ELA relatively moves on the surface of the wafer 161 through a desired movement path. The arrow shown in FIG. 3A shows an example of the movement path of the exposure area ELA. In the example shown in FIG. 3A, the wafer stage 16 moves in the −Y direction so that the exposure area ELA moves in the + Y direction at a certain timing. Thereafter, wafer stage 16 moves in the + X direction so that exposure area ELA moves in the -X direction. Thereafter, wafer stage 16 moves in the + Y direction so that exposure area ELA moves in the −Y direction. Thereafter, wafer stage 16 moves in the + X direction so that exposure area ELA moves in the -X direction. Thereafter, the wafer stage 16 repeats movement in the −Y direction, movement in the + X direction, movement in the + Y direction, and movement in the + X direction. As a result, the exposure area ELA relatively moves on the surface of the wafer 161 along the path indicated by the arrow in FIG.

  The surface of the wafer 161 can be divided into a plurality of exposure target surfaces 110. In this case, the wafer stage 16 moves so that the exposure area ELA sequentially overlaps the plurality of exposure target surfaces 110. The wafer stage 16 moves so that the exposure area ELA sequentially traces the plurality of exposure target surfaces 110. In the example shown in FIG. 3A, the wafer stage 16 moves in the −Y direction so that the exposure area ELA overlaps the exposure target surface 110-1. The light source 11 emits the exposure light EL1 such that the exposure light EL3 exposes the exposure region ELA (that is, the exposure target surface 110-1) at the timing when the exposure region ELA overlaps the exposure target surface 110-1. That is, the light source 11 emits the exposure light EL3 such that the timing at which the exposure area ELA overlaps the exposure target surface 110-1 coincides with the timing of one pulse emission of the pulse light emitted by the light source 11. . Thereafter, wafer stage 16 moves in the −Y direction along the Y-axis direction such that exposure area ELA overlaps exposure target surface 110-2a adjacent to exposure target surface 110-1. While the exposure area ELA is moving from the exposure target surface 110-1 toward the exposure target surface 110-2, the light source 11 does not emit the exposure light EL1. That is, while the exposure region ELA is moving from the exposure target surface 110-1 toward the exposure target surface 110-2, pulse emission is not performed. The light source 11 emits the exposure light EL1 such that the exposure light EL3 exposes the exposure region ELA (that is, the exposure target surface 110-2) at the timing when the exposure region ELA overlaps the exposure target surface 110-2. Thereafter, the same operation is repeated for a series of exposure target surfaces 110 arranged along the Y axis. Thereafter, when the exposure of a series of exposure target surfaces 110 arranged along the Y axis is completed (that is, the exposure of the exposure target surface 110-3 is completed), the wafer stage 16 moves the X-axis to the exposure target surface 110-3. The exposure area ELA moves toward the -X direction so that the exposure area ELA overlaps the exposure target surface 110-4 adjacent in the direction. Thereafter, the same operation is repeated for a series of exposure target surfaces 110 arranged along the Y-axis, starting from the exposure target surface 110-4. Thereafter, the above-described operation is repeated so that the exposure target surface ELA moves along the movement path shown in FIG.

  In the example shown in FIG. 3A, for simplification of description, it is assumed that one exposure target surface 110 does not overlap with another adjacent exposure target surface 110. That is, it is assumed that a part of one exposure target surface 110 does not overlap with a part of another adjacent exposure target surface 110. However, at least a portion of one exposure target surface 110 may overlap at least a portion of another adjacent exposure target surface 110. For example, a part of one exposure target surface 110 is exposed by one pulse emission, and a part of another exposure target surface 110 overlapping with one part of the one exposure target surface 110 is emitted by one pulse emission. It may be exposed.

  Further, in the example shown in FIG. 3A, while the exposure region ELA relatively moves along the desired movement path on the surface of the wafer 161, the wafer 161 is emitted once or a plurality of times by pulse emission. Has been exposed. However, the exposure area ELA may be stationary on the wafer 161 at the timing when the wafer 161 is exposed. In this case, the exposure apparatus 1 performs an operation of moving the exposure area ELA on the surface of the wafer 161 after exposing the exposure target surface 110. When the wafer 161 is exposed while the exposure area ELA is stationary with respect to the wafer 161 as described above, the exposure apparatus 1 uses a plurality of pulsed light emissions instead of the single pulsed light exposure. Exposure may be performed.

  The plurality of mirror elements 141 included in the spatial light modulator 14 are in a state based on a device pattern to be transferred to the wafer 161 by exposure by one pulse emission for each exposure (that is, one pulse emission). Transitions to. That is, the plurality of mirror elements 141 transition to a state of the plurality of mirror elements 141 when performing exposure by one pulse emission specified by the modulation pattern information.

  In the example shown in FIG. 3A, when the exposure target surface 110-1 is exposed, the plurality of mirror elements 141 should be transferred to the wafer 161 by one exposure to the exposure target surface 110-1. A transition is made to a state based on the device pattern (that is, the device pattern to be transferred to the wafer 161 located below the exposure target surface 110-1). Thereafter, when the exposure target surface 110-2 is exposed following the exposure target surface 110-1, the plurality of mirror elements 141 are transferred to the wafer 161 by one exposure to the exposure target surface 110-2. The state transitions to a state based on the device pattern to be transferred (that is, the device pattern to be transferred to the wafer 161 located below the exposure target surface 110-2). For example, FIG. 3B shows an example of a state of a plurality of mirror elements 141 for exposing the exposure target surface 110-1. For example, FIG. 3C shows an example of a state of a plurality of mirror elements 141 for exposing the exposure target surface 110-2.

  The mirror element 141 shown in white in FIGS. 3B and 3C indicates the mirror element 141 in the 0 state. On the other hand, the mirror element 141 shown in black in FIGS. 3B and 3C indicates the mirror element 141 in the π state.

  After the wafer 161 is exposed as described above, the wafer 161 is developed by a developer (not shown). Thereafter, the wafer 161 is etched by an etching device (not shown). As a result, the device pattern is transferred (in other words, formed) on the wafer 161.

(2) Pattern design device 2
Next, a pattern design apparatus 2 that generates modulation pattern information that defines the distribution of states of the plurality of mirror elements 141 will be described with reference to FIGS.

(2-1) Structure of Pattern Design Apparatus 2 First, the structure of the pattern design apparatus 2 will be described with reference to FIGS. 4 (a) to 4 (c). FIG. 4 is a block diagram showing the structure of the pattern design device 2.

  As shown in FIG. 4A, the pattern design apparatus 2 includes a CPU (Central Processing Unit) 21, a memory 22, an input unit 23, an operation device 24, and a display device 25.

  Here, as shown in FIG. 4B, the pattern design apparatus 2 is connected to the plurality of exposure apparatuses 1 via a wired or wireless communication interface 4 and controls the plurality of exposure apparatuses 1. May be provided. The host computer 3 may be provided in a device manufacturing factory where the exposure apparatus 1 is installed, or may be provided outside the device manufacturing factory.

  4C, the pattern design apparatus 2 may be provided in a server connected to the plurality of exposure apparatuses 1 via a wired or wireless communication interface 5. The pattern design device 2 may be connected to the host computer 3 via a wired or wireless communication interface 6. In the case of FIG. 4C, the pattern design apparatus 2 may be provided inside a device manufacturing factory where the exposure apparatus 1 is installed, or may be provided outside the device manufacturing factory.

  The CPU 21 controls the operation of the pattern design device 2. The CPU 21 generates modulation pattern information, as described in detail later. Specifically, the CPU 21 adjusts the design variables that define the cost function so that the termination condition of the predetermined cost function (in other words, the objective function) is satisfied. That is, the CPU 21 solves an optimization problem or a mathematical programming problem for optimizing design variables. As a result, the CPU 21 can generate modulation pattern information based on the optimized design variables. Here, “optimization of design variables” means an operation of calculating design variables that define an exposure operation capable of transferring a device pattern to the wafer 161 with better characteristics.

  At least some of the design variables directly or indirectly define the state of the plurality of mirror elements 141, as described in more detail below. Therefore, the CPU 21 performs a pattern design operation of generating modulation pattern information that defines the distribution of states of the plurality of mirror elements 141 by adjusting a design variable that defines a cost function. That is, the CPU 21 can generate the modulation pattern information by optimizing the design variables.

  The CPU 21 substantially functions as an EDA (Electronic Design Automation) tool. For example, the CPU 21 may function as an EDA tool by executing a computer program for causing the CPU 21 to perform the above-described design variable adjustment operation (particularly, pattern design operation).

  The memory 22 stores a computer program for causing the CPU 21 to perform the above-described design variable adjustment operation. The memory 22 further temporarily stores intermediate data generated while the CPU 21 performs the above-described design variable adjustment operation.

  The input unit 23 receives input of various data used for the CPU 21 to perform an operation of adjusting a design variable. Examples of such data include data indicating a device pattern to be transferred to the wafer 161, data indicating an initial value of a design variable, data indicating a constraint condition of a design variable, and the like. However, the pattern design device 2 may not include the input unit 23.

  The operation device 24 receives a user operation on the pattern design device 2. The operation device 24 may include, for example, at least one of a keyboard, a mouse, and a touch panel. The CPU 21 may perform the above-described operation of adjusting the design variables based on the user operation received by the operation device 24. However, the pattern design device 2 does not need to include the operation device 24.

  The display device 25 can display desired information. For example, the display device 25 may directly or indirectly display information indicating the state of the pattern design device 2. For example, the display device 25 may directly or indirectly display the modulation pattern information generated by the pattern design device 2. For example, the display device 25 may directly or indirectly display any information related to the above-described design variable adjustment operation (particularly, the pattern design operation). However, the pattern design device 2 may not include the display device 25.

  Note that the pattern design apparatus 2 may be an apparatus that constitutes a part of the controller 17 provided in the exposure apparatus 1. That is, the pattern design device 2 may be a device that constitutes a part of the exposure device 1. In this case, the controller 17 generates modulation pattern information and controls the spatial light modulator 14 based on the generated modulation pattern information. Alternatively, the pattern design device 2 may be a device that is physically or functionally separated from the controller 17 (or the exposure device 1 itself) included in the exposure device 1. In this case, the pattern design device 2 generates modulation pattern information and outputs the generated modulation pattern information to the controller 17. The controller 17 controls the spatial light modulator 14 based on the modulation pattern information output from the pattern design device 2.

  Further, the pattern design apparatus 2 may be a server that controls the plurality of exposure apparatuses 1 in a centralized manner. This server may be a host computer (for example, the host computer of FIG. 4B or FIG. 4C) owned by the device manufacturer, or a server provided separately from the host computer (for example, FIG. (C) server).

(2-2) Pattern Design Operation by Pattern Design Apparatus Subsequently, a pattern design operation (that is, an operation of generating modulation pattern information) performed by the pattern design apparatus 2 will be described with reference to FIG. FIG. 5 is a flowchart showing the flow of the pattern design operation performed by the pattern design device 2.

  As shown in FIG. 5, the CPU 21 included in the pattern design device 2 sets design variables related to the light source 11 (Step S21). The design variables associated with the light source 11 are adjustable or fixed parameters that define characteristics (eg, optical characteristics) of the light source 11. As a design variable related to the light source 11, at least one of a shape of an illumination pattern by the light source 11 (that is, a shape of an emission pattern of the exposure light EL1), a light intensity of the exposure light EL1, and the like is given as an example.

  The CPU 21 further sets design variables related to the projection optical system 15 (Step S22). The design variables associated with the projection optics 15 are adjustable or fixed parameters that define properties (eg, optical properties) of the projection optics 15. The design variables related to the projection optical system 15 include the wavefront shape of the exposure light EL3 projected by the projection optical system 15, the intensity distribution of the exposure light EL3 projected by the projection optical system 15, and the exposure projected by the projection optical system 15. At least one of the phase shift amount of the light EL3 and the like are given as an example. Alternatively, when the projection optical system 15 includes a wavefront manipulator that can adjust at least one of the wavefront shape of the exposure light EL3, the intensity distribution of the exposure light EL3, the phase shift amount of the exposure light EL3, and the like. An example of a design variable related to the projection optical system 15 is a control amount (or state) of the wavefront manipulator.

  The CPU 21 further sets design variables related to the design layout (step S23). The design variables related to the design layout are characteristics of the design layout (that is, a physical or virtual mask pattern used to transfer the desired device pattern onto the wafer 161 or the desired device pattern itself) (for example, optical characteristics). Characteristic) that is adjustable or fixed. The design layout is generated by so-called EDA based on a device pattern to be transferred to a substrate and a predetermined design rule. Examples of the predetermined design rule include a minimum width of a line or a hole and a minimum space between two lines or two holes.

  Examples of the design variables related to the light source 11, the design variables related to the projection optical system 15, and the design variables related to the design layout are described in the above-mentioned Patent Document 1 (International Publication No. 2006/2006) incorporated herein by reference. 083685 pamphlet) and the like. Therefore, for simplification of the description, detailed description about these design variables is omitted.

  The CPU 21 further sets design variables related to the spatial light modulator 14 (Step S24). The design variables associated with the spatial light modulator 14 are adjustable or fixed parameters that define characteristics (eg, optical properties) of the spatial light modulator 14. As a design variable related to such a spatial light modulator 14, each mirror group 140 in a case where a plurality of mirror elements 141 provided in the spatial light modulator 14 are divided into units of a mirror group 140 including at least one mirror element 141. The optical characteristics of are described as an example.

  In the present embodiment, as described above, the spatial light modulator 14 is a reflective spatial light modulator. In the present embodiment, the reflection amplitude of the mirror group 140 (that is, a parameter that directly or indirectly indicates the amplitude of the light reflected by the mirror group 140) is used as the optical characteristic of the mirror group 140. In the present embodiment, the reflection amplitude of the mirror group 140 is, for example, a parameter whose absolute value is defined by the square root of the reflectance of the mirror group 140 with respect to the exposure light EL2. Furthermore, in the present embodiment, the reflection amplitude of the mirror group 140 is a parameter having a positive or negative value according to the phase of the exposure light EL3 obtained by the mirror group 140 reflecting the exposure light EL2. For example, the reflection amplitude of the mirror group 140 has a positive value when the phase of the exposure light EL3 is δ, and has a negative value when the phase of the exposure light EL3 is δ + α (for example, α = 180 degrees). The parameter may be a value. Here, in addition to or instead of the reflection amplitude of the mirror group 140, the amplitude of the light reflected by the mirror group 140, the reflectance of the mirror group 140, and the intensity of the light reflected by the mirror group 140 (in other words, the mirror group At least one of the intensities that can be calculated from the amplitude of the light reflected by the mirror 140 is determined as an optical characteristic of the mirror group 140 (that is, an amplitude characteristic value indicating the amplitude of light passing through the mirror element 141 in the mirror group 140) ) May be used.

  When the spatial light modulator 14 is a transmissive spatial light modulator having a plurality of optical elements (in other words, optical surfaces), a plurality of optical variables are used as design variables related to the spatial light modulator 14. The optical characteristics of each high-priced element group in a case where the elements are divided in units of an optical element group including at least one optical element may be used. In this case, as the optical characteristic of the optical element group, the transmission amplitude of the optical element group (that is, a parameter directly or indirectly indicating the amplitude of light transmitted through the optical element group, and the square root of the transmittance of the optical element group) May be used. At this time, among the amplitude of the light transmitted through the optical element group, the transmittance of the optical element group, and the intensity of the light transmitted through the optical element group (in other words, the intensity that can be calculated from the amplitude of the light transmitted through the optical element group) May be used as an optical characteristic of the optical element group (that is, an amplitude characteristic value indicating an amplitude of light passing through the optical element in the optical element group).

  Note that the optical characteristics of the mirror group 140 depend on the state of each mirror element 141 constituting the mirror group 140. For this reason, the design variables related to the spatial light modulator 14 are substantially the state of each mirror element 141 (or the distribution of the mirror element 141 in the 0 state or the distribution of the mirror element 141 in the π state). It can be said that this is a design variable indicating

  In addition to the operations in steps S21 to S24, the CPU 21 may set a constraint condition for each design variable. Furthermore, the CPU 21 may acquire, via the input unit 23, various data used for the CPU 21 to perform an operation of adjusting a design variable (particularly, a pattern design operation). The set constraints and various data acquired via the input unit 23 may be considered when adjusting design variables, which will be described later.

  Thereafter, the CPU 21 defines a cost function CF defined by the design variables set in steps S21 to S24 (step S25). An example of the cost function CF is represented by, for example, Expression 1.

Here, _{"(z1 1, ···, z1 N1} ) " shows a design variable associated with the light source 11 set in step S21. “N1” indicates the total number of design variables related to the light source 11. “(Z2 ₁ ,..., Z2 _N2 )” indicates design variables related to the projection optical system 15 set in step S22. “N2” indicates the total number of design variables related to the projection optical system 15. “(Z3 ₁ ,..., Z3 _N3 )” indicates design variables related to the design layout set in step S23. “N3” indicates the total number of design variables related to the design layout. “(Z4 ₁ ,..., Z4 _N4 )” indicates design variables related to the spatial light modulator 14 set in step S24. “N4” indicates the total number of design variables related to the spatial light modulator 14. _{"F p (z1 1, ···,} z1 N1, z2 1, ···, z2 N2, z3 1, ···, z3 N3, z4 1, ···, z4 N4) " is, p-th evaluation point (e.g., aerial image (i.e., the exposure light EL3 intensity distribution) or evaluation point corresponding to the desired image portion of the resist image is defined by the space image on the wafer 161) design variables "z1 ₁ in _{, ···, z1 N1, z2 1} , ···, z2 N1, z3 1, ···, z3 N3, z4 1, ···, and the estimated value of the characteristic realized by _{z4 N4} ", the p This is a function for deriving the difference between the characteristic to be realized at the th evaluation point and the target value. “W _p ” is a weighting coefficient assigned to the p-th evaluation point. “P” is the total number of evaluation points.

Here, the design variables related to the light source 11, the design variables related to the projection optical system 15, the design variables related to the design layout, and the design variables related to the spatial light modulator 14 are substantially on the wafer 161. (That is, the intensity distribution of the exposure light EL3). Therefore, the cost function CF may be a function related to the characteristics of the aerial image of the exposure light EL3 on the wafer 161. For example, _{"f p (z1 1, ···,} z1 N1, z2 1, ···, z2 N1, z3 1, ···, z3 N3, z4 1, ···, z4 N4) " is, p The function may be a function that derives a difference between the estimated value of the characteristic of the aerial image realized at the i-th evaluation point and the target value of the characteristic of the aerial image to be realized at the p-th evaluation point.

Alternatively, the aerial image defines a resist image corresponding to the exposure pattern of the resist applied to the wafer 161. The resist image defines a device pattern to be transferred to the wafer 161. For this reason, the cost function CF may be a function related to the characteristics of the resist image on the wafer 161. For example, _{"f p (z1 1, ···,} z1 N1, z2 1, ···, z2 N1, z3 1, ···, z3 N3, z4 1, ···, z4 N4) " is, p The function may be a function that derives a difference between the estimated value of the characteristic of the resist image realized at the nth evaluation point and the target value of the characteristic of the resist image to be realized at the pth evaluation point.

  Note that the cost function CF shown in Equation 1 is merely an example. Therefore, a cost function CF different from Equation 1 may be defined. Another example of the cost function CF is described in, for example, the above-mentioned Patent Document 1 (International Publication No. WO 2006/083685) incorporated by reference in the present specification, and a detailed description thereof will be omitted.

  Thereafter, the CPU 21 adjusts (in other words, changes) at least one of the design variables set in steps S21 to S24 so that the termination condition of the cost function CF is satisfied (step S26). For example, the CPU 21 adjusts at least one design variable so that the termination condition that “the cost function CF is minimized” is satisfied. At this time, the CPU 21 may simultaneously adjust a plurality of design variables. Specifically, for example, the CPU 21 determines at least one of the design variables related to the light source 11, the design variables related to the projection optical system 15, the design variables related to the design layout, and the design variables related to the spatial light modulator 14. Two may be adjusted simultaneously. Alternatively, the CPU 21 may sequentially adjust the plurality of design variables one by one. For example, the CPU 21 may adjust the design variables related to the light source 11 with the design variables related to the projection optical system 15, the design layout, and the spatial light modulator 14 fixed. Thereafter, for example, the CPU 21 may adjust the design variables related to the spatial light modulator 14 with the design variables related to the light source 11, the projection optical system 15, and the design layout fixed.

  As described above, when the termination condition that “the cost function CF is minimized” is satisfied, it is determined that the characteristic of the resist image that defines the device pattern transferred to the wafer 161 is closest to the target value. The ideal condition of the resist image is satisfied. When the ideal condition of the resist image is satisfied, the pattern error of the device pattern transferred to the wafer 161 (that is, the shift amount between the actually transferred device pattern and the ideal device pattern) becomes the smallest. For this reason, the pattern design operation shown in FIG. 5 is an operation of adjusting a plurality of design variables (that is, an array of design variables) so that the pattern error of the device pattern is reduced (typically, minimized). It can be said that there is. In other words, the pattern design operation shown in FIG. 5 can be said to be an operation of adjusting a plurality of design variables so that the pattern error of the device pattern becomes smaller than before the design variables are adjusted.

(2-3) Specific Example of Design Variable Related to Spatial Light Modulator Next, a specific example of a design variable related to the spatial light modulator 14 will be described with reference to FIGS. Hereinafter, the first specific example of the design variables to the eighth specific example of the design variables will be described in order. However, at least a part of the components described in the specific example of the design variable A (where A is an integer of 1 or more and 8 or less) is the design variable B (where B is 1 or more and 8 or less). (An integer different from A).

(2-3-1) First Specific Example of Design Variable Related to Spatial Light Modulator First , referring to FIG. 6A and FIG. A first specific example will be described. FIGS. 6A and 6B are plan views each showing a mirror group 140-1 that defines a first specific example of a design variable related to the spatial light modulator 14. FIG.

  As shown in FIGS. 6A and 6B, a first specific example of the design variables related to the spatial light modulator 14 is that a plurality of mirror elements 141 included in the spatial light modulator 14 are connected to a single mirror. FIG. 14 shows the reflection amplitude of each mirror group 140-1 in the case where the mirror group 140-1 including the element 141 is partitioned.

  The mirror group 140-1 includes a single mirror element 141. Specifically, the mirror group 140-1 includes the reflection surface 141a of the single mirror element 141. In other words, the mirror group 140-1 includes a portion where the reflection surface 141a of the single mirror element 141 is located.

  The mirror group 140-1 is located between the single mirror element 141 and another mirror element 141 adjacent to the single mirror element 141 in addition to the single mirror element 141 and has a single mirror. Includes a portion that does not constitute the element 141 (in particular, does not constitute the reflection surface 141a). In other words, the mirror group 140-1 includes a portion that is adjacent to the single mirror element 141 and that does not configure the reflection surface 141a of the single mirror element 141. In the present embodiment, the distribution along the outer edge of the single mirror element 141 is an example of a portion that is located between the single mirror element 141 and another mirror element 141 and does not constitute the single mirror element 141. A gap 142 (or a part of such a gap 142) is illustrated. Accordingly, in the present embodiment, the mirror group 140-1 includes the gap 142 distributed along the outer edge of the single mirror element 141 in addition to the single mirror element 141. More specifically, the mirror group 140-1 is adjacent to the gap 142 (+ X) adjacent to the outer edge of the single mirror element 141 on the + X direction side and adjacent to the outer edge of the single mirror element 141 on the + Y direction side. A gap 142 (+ Y), a gap 142 (−X) adjacent to the outer edge of the single mirror element 141 on the −X direction side, and a gap 142 (−X) adjacent to the outer edge of the single mirror element 141 on the −Y direction side. -Y). However, the mirror group 140-1 does not need to include at least one of the gap 142 (+ X), the gap 142 (+ Y), the gap 142 (-X), and the gap 142 (-Y).

  The reflection amplitude of the mirror group 140-1 is a parameter whose absolute value is defined by the square root of the reflectance of the mirror group 140-1 with respect to the exposure light EL2. Therefore, the reflection amplitude of the mirror group 140-1 is not only the reflectance of the exposure light EL2 via the reflection surface 141a of the single mirror element 141 constituting the mirror group 140-1, but also the mirror different from the reflection surface 141a. This parameter also takes into account the reflectance of the exposure light EL2 through the portion of the group 140-1 (that is, the portion of the mirror group 140-1 that does not form the reflection surface 141a). The reflection amplitude of the mirror group 140-1 is not only the reflection of the exposure light EL2 via the reflection surface 141a of the single mirror element 141 constituting the mirror group 140-1, but also the mirror group 140-1 different from the reflection surface 141a. This parameter also takes into account the reflection of the exposure light EL2 through the portion 1 (that is, the portion of the mirror group 140-1 that does not form the reflection surface 141a).

  As described above, in the present embodiment, the gap 142 is illustrated as an example of a portion that does not configure the reflection surface 141a. Therefore, in the present embodiment, the reflection amplitude of the mirror group 140-1 is a parameter that also takes into account the reflectance of the exposure light EL2 through the gap 142 in the mirror group 140-1. The reflection amplitude of the mirror group 140-1 is a parameter that also takes into account the reflection of the exposure light EL2 through a structure that can reach the exposure light EL2 that propagates through the gap 142 in the mirror group 140-1. As an example of a structure to which the exposure light EL2 propagating through the gap 142 can reach, for example, at least one of the first connection member 143, the hinge part 144, the post part 145, the anchor part 146, the electrode 148, and the support substrate 149 One is. As another example of the structure to which the exposure light EL2 propagating through the gap 142 can reach, for example, a surface of the mirror element 141 other than the reflection surface 141a (for example, when the reflection surface 141a is the upper surface of the mirror element 141). Then, at least one of the side surface and the bottom surface of the mirror element 141 is raised.

  As described above, in the present embodiment, the reflection amplitude of the mirror group 140-1 also takes into account the reflectivity of the exposure light EL2 through a portion different from the reflection surface 141a (that is, a portion not forming the reflection surface 141a). Parameter. For this reason, the reflection amplitude of the mirror group 140-1 may have a different value from the reflection amplitude of the mirror element 141 in consideration of only the reflectance of the exposure light EL2 via the reflection surface 141a. However, the reflection amplitude of the mirror group 140-1 is compared with the reflection amplitude of the mirror element 141 in which only the reflectance of the exposure light EL2 via the reflection surface 141a is considered, and the optical characteristics of the spatial light modulator 14 (particularly, This is advantageous in that the optical characteristics related to the reflection of the exposure light EL2) can be represented with higher accuracy.

  Since the mirror group 140-1 includes a single mirror element 141, the number of mirror groups 140-1 is the same as the number of mirror elements 141 included in the spatial light modulator. Therefore, the total number N4 of design variables related to the spatial light modulator 14 (that is, the number of mirror groups 140-1) is equal to the number of mirror elements 141. Thus, each design variable related to the spatial light modulator 14 becomes a parameter corresponding to the corresponding single mirror element 141. As a result, the N4 design variables associated with spatial light modulator 14 indicate the reflection amplitudes of N4 mirror groups 140-1 each including a corresponding single mirror element 141. That is, the design variables related to the spatial light modulator 14 indicate the reflection amplitudes of the N4 mirror groups 140-1 each including the single mirror element 141.

  As shown in FIG. 6A, a single mirror element 141 constituting the mirror group 140-1 can be in the 0 state. Further, as shown in FIG. 6B, a single mirror element 141 constituting the mirror group 140-1 can be in the π state. Therefore, the possible values of each of the N4 design variables related to the spatial light modulator 14 are the reflection amplitude r (0) and the π state of the mirror group 140-1 including the single mirror element 141 that goes to the zero state. Is the reflection amplitude r (π) of the mirror group 140-1 including the single mirror element 141. Therefore, when setting or adjusting the design variables related to the spatial light modulator 14, the CPU 21 sets each of the N4 design variables to the reflection amplitude r according to the device pattern to be transferred to the wafer 161 and the like. (0) or r (π).

  The CPU 21 determines the N4 design variables related to the spatial light modulator 14 by adjusting the design variables related to the spatial light modulator 14 so that the cost function CF satisfies the termination condition. When the N4 design variables related to the spatial light modulator 14 are determined, the states of the N4 mirror elements 141 constituting the N4 mirror group 140-1 are determined. Specifically, when it is determined that the design variable indicating the reflection amplitude of a certain mirror group 140-1 is the reflection amplitude r (0), the single mirror element 141 that configures the certain mirror group 140-1 is The state is determined to be the zero state. Similarly, when the design variable indicating the reflection amplitude of a certain mirror group 140-1 is determined to be the reflection amplitude r (π), the state of the single mirror element 141 constituting the certain mirror group 140-1 becomes It is determined that the state should be π. As a result, the CPU 21 can generate modulation pattern information that defines the distribution of states of the plurality of mirror elements 141.

  The CPU 21 may specify (in other words, estimate or calculate) the reflection amplitudes r (0) and r (π) using a simulation. In this case, the CPU 21 sets each of the N4 design variables related to the spatial light modulator 14 to one of the reflection amplitudes r (0) and r (π) specified by the simulation.

  Alternatively, when the memory 22 previously stores the reflection amplitudes r (0) and r (π) specified using the simulation, the CPU 21 uses the simulation to perform the reflection amplitudes r (0) and r (π). ) Need not be specified. In this case, the CPU 21 may specify the reflection amplitudes r (0) and r (π) by acquiring the reflection amplitudes r (0) and r (π) stored in the memory 22. The CPU 21 may set each of the N4 design variables related to the spatial light modulator 14 to one of the reflection amplitudes r (0) and r (π) acquired from the memory 22.

  Here, an example of an operation of specifying the reflection amplitudes r (0) and r (π) using simulation will be described with reference to FIGS. 7A to 7C. FIG. 7A is a side view showing a basic structure of a simulation model of the spatial light modulator 14. FIG. FIGS. 7B and 7C are side views showing an example of a simulation model used for specifying the reflection amplitudes r (0) and r (π), respectively.

  As shown in FIG. 7A, the reflection amplitudes r (0) and r (π) are specified using a simulation model for calculating an electromagnetic field. In the example shown in FIG. 7A, a simulation model in which the distribution of the plurality of mirror elements 141 is a one-dimensional distribution is used to reduce the load required for the simulation. However, a simulation model in which the distribution of the plurality of mirror elements 141 is a two-dimensional distribution or a three-dimensional distribution may be used. The simulation model has a periodic structure along a predetermined direction (for example, the Y-axis direction). Specifically, the simulation model has a structure in which a unit model divided by a periodic boundary repeatedly appears along a predetermined direction (for example, the Y-axis direction). Further, in the simulation model shown in FIG. 7A, the support substrate 149 includes a first substrate portion 149a and a second substrate portion 149b. The upper surface of the first substrate portion 149a (the surface on the −Z direction side in FIG. 7A) is closer to the plurality of mirror elements 141 than the upper surface of the second substrate portion 149b. A gap 142 located between two mirror elements 141 adjacent to each other is located above or near the center of the first substrate portion 149a or the second substrate portion 149b (in the −Z direction in FIG. 7A). Side).

  Using such a simulation model, the CPU 21 specifies the light intensity of the zero-order reflected light from the mirror group 140-1 when the incident light is made to enter the mirror group 140-1. The ratio of the light intensity of the zero-order reflected light to the light intensity of the incident light is the reflectance.

  For example, as shown in FIG. 7B, the CPU 21 uses a first simulation model in which mirror elements 141 in the 0 state and mirror elements in the π state are alternately and repeatedly arranged along the Y-axis direction. Thus, the reflectance R1 in the first simulation model is specified. Further, for example, as shown in FIG. 7C, the CPU 21 continuously includes a plurality of mirror elements 141 in the 0 state along the Y-axis direction (four in the example shown in FIG. 7C). Using a second simulation model in which a plurality of mirror elements 141 (four in the example shown in FIG. 7C) are arranged in the π state continuously along the Y-axis direction, the second simulation is performed. Specify the reflectance R2 in the model. The reflectance R1 in the first simulation model, the reflectance R2 in the second simulation model, and the reflection amplitudes r (0) and r (π) have the relationships shown in Expressions 2 and 3. Therefore, the CPU 21 can specify the reflection amplitudes r (0) and r (π) by specifying the reflectance R1 in the first simulation model and the reflectance R2 in the second simulation model.

  As another example, the CPU 21 calculates the reflection amplitude r (0) from a third simulation model in which a plurality of mirror elements 141 in the 0 state are continuously arranged in the Y-axis direction, and calculates the mirror element 141 in the π state. The reflection amplitude r (π) may be calculated from a fourth simulation model in which a plurality of 141s are continuously arranged along the Y-axis direction. Then, the CPU 21 may calculate the reflectances R1 and R2 from Expressions 2 and 3 using the calculated reflection amplitudes r (0) and r (π). Note that, in addition to or instead of using the simulation model, the CPU 21 determines the reflectance R1 based on the measurement result of the light from the mirror element 141 actually arranged in the arrangement mode shown in FIG. And R2 may be determined.

  An example in which specific numerical values are applied to the above-described simulation model will be further described. For example, the thickness (that is, the size in the Z-axis direction) d1 of each mirror element 141 is assumed to be 200 nanometers. It is assumed that the thickness (that is, the size in the Z-axis direction) d2 of the first support substrate portion 143a is 200 nanometers. The distance d3 along the Z-axis direction between the upper surface of the first support substrate portion 143a and the upper surface of the second support substrate portion 143b is assumed to be 48.25 nanometers. The distance d4 between each mirror element 141 and the upper surface of the first support substrate portion 143a is assumed to be 200 nanometers. The distance d5 along the Y-axis direction between the periodic boundary and the center of the gap 142 is 5 micrometers. It is assumed that the size d6 of the gap 142 along the Y-axis direction is 0.5 μm. It is assumed that the wavelength of the incident light is 193 nanometers. It is assumed that the incident angle of the incident light is 6 degrees. In this case, the reflectance R1 in the first simulation model is 0.0055 (= 0.55%), and the reflectance R2 in the second simulation model is 0.100 (= 10%). As a result, the reflection amplitude r (0) becomes 0.71, and the reflection amplitude r (π) becomes 0.63.

  However, the phase of the wavefront of the exposure light EL3 obtained by reflecting the exposure light EL2 by the mirror element 141 in the 0 state is equal to the exposure light EL3 obtained by reflecting the exposure light EL2 by the mirror element 141 in the π state. Differs by 180 degrees (π radians) from the phase of the wavefront of Therefore, one of the reflection amplitudes r (0) and r (π) has a positive value, while the other one of the reflection amplitudes r (0) and r (π) has a negative value. For example, when the specific numerical values described above are applied to the simulation model, the reflection amplitude r (0) becomes +0.71 and the reflection amplitude r (π) becomes -0.63, or the reflection amplitude r (0) Becomes −0.71 and the reflection amplitude r (π) becomes +0.63.

  As can be seen from the reflection amplitudes r (0) and r (π) when the specific numerical values described above are applied to the simulation model, in the present embodiment, the absolute value of the reflection amplitude r (0) and the reflection amplitude r (π ) Does not have to match the absolute value. As described above, since the mismatch between the reflection amplitude r (0) and the reflection amplitude r (π) is permitted, in the present embodiment, modulation capable of transferring a desired device pattern to the wafer 161 more suitably. Pattern information is generated. The reason will be described later.

  The operation of specifying the reflection amplitudes r (0) and r (π) using the simulation models shown in FIGS. 7A to 7C is merely an example. Therefore, the reflection amplitudes r (0) and r (π) may be specified using a simulation model different from the simulation models shown in FIGS. 7A to 7C or any other method. For example, the CPU 21 may directly or indirectly specify the reflection amplitudes r (0) and r (π) using an arbitrary simulation model. For example, the CPU 21 specifies the reflectance R (0) of the mirror group 140-1 including the single mirror element 141 in the 0 state using an arbitrary simulation model, and specifies the specified reflectance (R ( The reflection amplitude r (0) may be specified by calculating the square root of 0. For example, the CPU 21 may use an arbitrary simulation model to set the mirror group 140 including the single mirror element 141 in the π state. In addition to specifying the reflectance R (π) of −1, the reflection amplitude r (π) may be specified by calculating the square root of the specified reflectance R (π). The reflection amplitudes r (0) and r (π) may be specified without using, for example, the CPU 21 actually irradiates the mirror element 141 with incident light (for example, exposure light EL2). The reflection amplitudes r (0) and r (π) may be specified using the measurement results of the light intensity of the reflected light (for example, the exposure light EL3) obtained by performing the test. By using the test mask on which the pattern is drawn or the measurement result of the characteristics of the resist pattern (or device pattern) obtained by developing the wafer 161 actually exposed by the exposure light EL3 passed through the spatial light modulator 14. In this case, the CPU 21 estimates by simulation a resist image realized by a combination of certain reflection amplitudes r (0) and r (π). At the same time, by adjusting the reflection amplitudes r (0) and r (π) so that the estimated resist image matches the characteristics of the resist pattern actually measured, Amplitude r (0) and r ([pi) may identify the.

  As described above, in the first specific example, the design variable related to the spatial light modulator 14 is the reflection of the exposure light EL2 via the reflection surface 141a of the single mirror element 141 constituting the mirror group 140-1. Not only the reflection amplitude but also the reflection of the exposure light EL2 via the mirror group 140-1 different from the reflection surface 141a is shown. For this reason, the CPU 21 can generate modulation pattern information that can transfer a desired device pattern onto the wafer 161 more suitably.

  In the first specific example, the light that enters the gap 142 of the mirror group 140-1 and is emitted from the gap 142 and the light that has been combined with the light that has passed through the reflection surface 141a of the mirror group 140-1 are combined. The state of the mirror element 141 in each mirror group 140-1 is set to one of the 0 state and the π state using the amplitude. For this reason, the CPU 21 can generate modulation pattern information that can transfer a desired device pattern onto the wafer 161 more suitably.

  Hereinafter, the technical reason will be described with reference to FIGS. 8 (a) and 8 (b). FIGS. 8A and 8B respectively show two mirror elements 141 adjacent to each other along the Y-axis direction and a gap 142 located between the two mirror elements 141 (or the two mirror elements 141). 15 is a graph showing the reflectance of a mirror group 140-2 including a gap 142) distributed along the outer edge of the mirror 141.

  First, a comparative example in which a design variable related to the spatial light modulator 14 indicates a reflection amplitude considering only the reflection of the exposure light EL2 via the reflection surface 141a of the single mirror element 141 constituting the mirror group 140-1. Will be described. In the comparative example, the reflection amplitudes r (0) and r (π) are ideally or theoretically set because the reflection of the exposure light EL2 through the mirror group 140-1 different from the reflection surface 141a is not considered. Specifically, it should have a relationship of reflection amplitude r (0) = − reflection amplitude r (π). For example, ideally or theoretically, the reflection amplitude r (0) becomes +1 and the reflection amplitude r (π) becomes −1, or the reflection amplitude r (0) becomes −1 and the reflection amplitude r (π) should be +1. Therefore, in the comparative example, the CPU 21 sets each of the N4 design variables to +1 or −1 according to the device pattern to be transferred to the wafer 161 and the like.

  However, as described above, in the actual spatial light modulator 14, reflection of the exposure light EL2 through a portion different from the reflection surface 141a in the mirror group 140-1 may occur. For example, in the actual spatial light modulator 14, reflection of the exposure light EL2 through a structure that can reach the exposure light EL2 propagating through the gap 142 in the mirror group 140-1 may occur. Therefore, the actual or actual reflection amplitudes r (0) and r (π) do not always have an ideal or theoretical relationship of reflection amplitude r (0) = − reflection amplitude r (π). Absent.

  For example, using the reflectance of the mirror group 140 specified when the specific numerical values described above are applied to the simulation model shown in FIG. And r (π) do not have an ideal or theoretical relationship of reflection amplitude r (0) = − reflection amplitude r (π).

  FIG. 8A shows two mirror elements 141 adjacent in the Y-axis direction and a gap 142 located between the two mirror elements 141 (or distributed along the outer edge of the two mirror elements 142). The reflectance of the mirror group 140-2 including the gap 142) is shown. The horizontal axis of the graph shown in FIG. 8A indicates the distance d4 between each mirror element 141 and the upper surface of the first support substrate portion 149a. In particular, FIG. 8A shows the reflectance R (0,0) of the mirror group 140-2 including the two mirror elements 141 in the 0 state and the mirror group 140- including the two mirror elements 141 in the π state. 2 shows a reflectance R (π, π). If the relationship of reflection amplitude r (0) = − reflection amplitude r (π) holds, the reflectance R (0,0) and the reflectance R (π, π) should match. However, as shown in FIG. 8A, the reflectivity R (0,0) and the reflectivity R (π, π) depend on the distance d4 between each mirror element 141 and the upper surface of the first support substrate portion 149a. ) Does not match. Further, as shown in FIG. 8A, the reflectances R (0,0) and R (0,0) depend on the distance d4 between each mirror element 141 and the upper surface of the first support substrate portion 149a. π, π) vary. Therefore, even when viewed from the reflectances R (0,0) and R (π, π) of the mirror group 140-2 specified using the simulation model, the actual or actual reflection amplitudes r (0) and r It can be seen that (π) does not always have the ideal or theoretical relationship of reflection amplitude r (0) = − reflection amplitude r (π).

  On the other hand, FIG. 8B shows the reflectance R (0, π) of the mirror group 140-2 including the single mirror element 141 in the 0 state and the single mirror element 141 in the π state. As described above, the phase of the wavefront of the exposure light EL3 obtained by the mirror element 141 in the 0 state reflecting the exposure light EL2 is obtained by the mirror element 141 in the π state reflecting the exposure light EL2. It differs by 180 degrees (π radians) from the phase of the wavefront of the exposure light EL3. For this reason, if the relationship of reflection amplitude r (0) = − reflection amplitude r (π) holds, the exposure light EL3 obtained by reflecting the exposure light EL2 by the mirror element 141 in the 0 state and the exposure light EL The exposure light EL3 obtained by reflecting the exposure light EL2 by the mirror element 141 in the state cancels each other. For this reason, if the relationship of reflection amplitude r (0) = − reflection amplitude r (π) holds, the reflectance R (0, π) should be zero. However, as shown in FIG. 8B, the reflectance R (0, π) does not become zero. Further, as shown in FIG. 8B, the reflectance R (0, π) varies depending on the distance d4 between each mirror element 141 and the upper surface of the first support substrate portion 149a. Therefore, even from the reflectance R (0, π) of the mirror group 140-2 specified using the simulation model, the actual or realistic reflection amplitudes r (0) and r (π) are equal to the reflection amplitude. It can be seen that r (0) = − reflection amplitude r (π) does not always have an ideal or theoretical relationship.

  Therefore, from the ideal or theoretical reflection amplitudes r (0) and r (π) having an ideal or theoretical relationship of reflection amplitude r (0) = − reflection amplitude r (π), the wafer 161 is obtained. The actual or realistic intensity distribution (that is, the aerial image) of the exposure light EL3 above cannot be preferably estimated. For this reason, when the design variable related to the spatial light modulator 14 is set to the ideal or theoretical reflection amplitude r (0) or r (π), the desired device pattern is preferably applied to the wafer 161. There is a technical problem that modulation pattern information that can be transferred is not always generated.

  On the other hand, the actual or real reflection amplitudes r (0) and r (π) do not always have an ideal or theoretical relationship of reflection amplitude r (0) = − reflection amplitude r (π). One of the reasons is, as described above, a structure in which the exposure light EL2 can be reflected by the reflection of the exposure light EL2 via the mirror group 140-1 different from the reflection surface 141a (for example, the exposure light EL2 propagating through the gap 142). (Reflection of the exposure light EL2 through the body). On the other hand, it is theoretically possible to eliminate such a gap 142 by improving the manufacturing accuracy of the spatial light modulator 14. When the gap 142 disappears, the actual or realistic reflection amplitudes r (0) and r (π) have an ideal or theoretical relationship of reflection amplitude r (0) = − reflection amplitude r (π). It is also assumed that it is possible. However, improving the manufacturing accuracy to a level at which the gap 142 is eliminated is technically difficult or causes the yield of the spatial light modulator 14 to be excessively deteriorated. Therefore, there is a limit to a method of solving the above-described technical problem using the improvement in the manufacturing accuracy of the spatial light modulator 14.

  In addition, by forming a step on the upper surface of the support substrate 149, reflection of the exposure light EL2 via a structure to which the exposure light EL2 propagating through the gap 142 can reach (especially when the exposure light EL2 travels toward the projection optical system 15). It is also assumed that reflection of the exposure light EL2) can be prevented. However, forming a step on the upper surface of the support substrate 149 with nanometer precision is technically difficult or causes excessive deterioration in the yield of the spatial light modulator 14. Therefore, there is also a limitation in a method of solving the above-described technical problem using the step formed on the upper surface of the support substrate 149.

  Therefore, in the present embodiment, as described above, a mirror group different from the reflection surface 141a is used in order to eliminate or cancel the influence of the reflection of the exposure light EL2 via the mirror group 140-1 different from the reflection surface 141a. The reflection amplitudes r (0) and r (π) are used in consideration of the reflection of the exposure light EL2 through the portion 140-1. For this reason, modulation pattern information capable of suitably transferring a desired device pattern to the wafer 161 is generated. As a result, the exposure apparatus 1 can expose the wafer 161 by using the spatial light modulator 14 controlled based on the modulation pattern information so that a desired device pattern is appropriately transferred.

  In the above description, the spatial light modulator 14 is a reflection type spatial light modulator. However, the spatial light modulator 14 may be a transmissive spatial light modulator including a plurality of optical elements (for example, a plurality of transmissive pixels configured by a liquid crystal element or the like) each capable of transmitting the exposure light EL2. Good. In this case, as a design variable related to the spatial light modulator 14, instead of the above-described “reflection amplitude of the mirror group 140-1”, “the portion where the transmission surface of the single optical element is located and the single optical A predetermined portion including a portion which is located between the element and another optical element adjacent to the single optical element and which does not constitute a single optical element (in particular, does not constitute a transmission area which transmits the exposure light EL2); (That is, a parameter that directly or indirectly indicates the amplitude of light transmitted through the optical element included in the transmission-type spatial light modulator 14) ”. As a result, the above-described various effects can be enjoyed even in the transmission type spatial light modulator.

  In the above description, the reflection amplitudes r (0) and r (π) are used in consideration of the reflection of the exposure light EL2 via the mirror group 140-1 different from the reflection surface 141a. However, one of the reasons that there is a possibility that modulation pattern information that can transfer a desired device pattern onto the wafer 161 properly cannot be generated is that the actual or realistic reflection amplitude r (0) and r (π) does not always have the ideal or theoretical relationship of reflection amplitude r (0) = − reflection amplitude r (π). Then, irrespective of whether or not the reflection of the exposure light EL2 through the mirror group 140-1 different from the reflection surface 141a is considered, the values are different from each other (for example, the absolute values are different). The reflection amplitudes r (0) and r (π) may be used. For example, the CPU 21 does not use a simulation model or the like (in other words, does not consider the reflection of the exposure light EL2 through a part of the mirror group 140-1 different from the reflection surface 141a), based on some reference. The reflection amplitudes r (0) and r (π) having different values may be specified.

  Further, the reflection amplitude r (0) may change depending on the position of the mirror group 140-1. For example, the reflection amplitude r (0) of the mirror group 140-1 including the mirror element 141 located in the first region on the light modulation surface 14a is located in a second region different from the first region on the light modulation surface 14a. The reflection amplitude r (0) of the mirror group 140-1 including the mirror element 141 may be different. Similarly, the above-described reflection amplitude r (π) may change depending on the position of the mirror group 140-1. For example, the reflection amplitude r (π) of the mirror group 140-1 including the mirror element 141 located in the first region on the light modulation surface 14a includes the mirror element 141 located in the second region on the light modulation surface 14a. It may be different from the reflection amplitude r (π) of the mirror group 140-1. That is, at least one of the reflection amplitudes r (0) and r (π) may have position dependency.

(2-3-2) Second Specific Example of Design Variable Related to Spatial Light Modulator Next, a second specific example of the design variable related to the spatial light modulator 14 will be described. The second specific example of the design variables related to the spatial light modulator 14 is different from the first specific example of the design variables related to the spatial light modulator 14 in that the reflection amplitude of the mirror group 140-1 is changed. The difference is that the light is divided for each polarization component of the incident light (for example, the exposure light EL2) incident at -1. The other components of the second specific example of the design variables related to the spatial light modulator 14 may be the same as the other components of the first specific example of the design variables related to the spatial light modulator 14. For this reason, the same components as those in the first specific example of the design variables related to the spatial light modulator 14 are denoted by the same reference numerals, and detailed description thereof will be omitted.

  Specifically, for example, when the light incident on the mirror group 140-1 includes K (where K is an integer of 2 or more) polarization components, the reflection amplitude of the mirror group 140-1 is equal to the mirror amplitude. A reflection amplitude that directly or indirectly indicates the amplitude of the first polarization component of the light reflected by the group 140-1, and a second polarization component of the light reflected by the mirror group 140-1 , The reflected amplitude indicating directly or indirectly the amplitude of the K-th polarization component of the light reflected by the mirror group 140-1 directly or indirectly. It is divided into and. Thus, each design variable associated with the spatial light modulator 14 is the first polarization of the light reflected by the mirror group 140-1 including the single mirror element 141 in the (1-1) 0 state. The reflected amplitude indicating directly or indirectly the amplitude of the component, the second polarization component of the light reflected by the mirror group 140-1 including the single mirror element 141 in the (1-2) 0 state Of the light reflected by the mirror group 140-1 including the single mirror element 141 in the (1-K) 0 state, directly or indirectly indicating the amplitude of The reflection amplitude indicating directly or indirectly the amplitude of the K-th polarization component, and the light reflected by the mirror group 140-1 including the single mirror element 141 in the (2-1) π state. Directly or indirectly the amplitude of the first polarization component of The reflection amplitude, directly or indirectly, the amplitude of the second polarization component of the light reflected by the mirror group 140-1 including the single mirror element 141 in the (2-2) π state. .. And the amplitude of the Kth polarization component of the light reflected by the mirror group 140-1 including the single mirror element 141 in the (2-K) π state. Alternatively, it is set to one of the reflection amplitudes indicated indirectly.

  Typically, light incident on mirror group 140-1 includes at least one of s-polarized light and p-polarized light. In this case, the reflection amplitude of the mirror group 140-1 includes the reflection amplitude indicating directly or indirectly the amplitude of the s-polarized light of the light reflected by the mirror group 140-1, and the mirror group 140-1. The reflected light is divided into a reflected amplitude indicating directly or indirectly an amplitude of the p-polarized light of the light reflected by the light. Therefore, each design variable related to the spatial light modulator 14 is the amplitude of the s-polarized light of the light reflected by the mirror group 140-1 including the single mirror element 141 in the (1-1) 0 state. Directly or indirectly, and the amplitude of the p-polarized light of the light reflected by the mirror group 140-1 including the single mirror element 141 in the (1-2) 0 state. Directly or indirectly, the reflection amplitude indicated indirectly or the amplitude of the s-polarized light of the light reflected by the mirror group 140-1 including the single mirror element 141 in the (2-1) π state. Directly or indirectly indicates the amplitude of the p-polarized light of the light reflected by the mirror group 140-1 including the single mirror element 141 in the (2-2) π state and the reflected amplitude shown in FIG. Set to one of the amplitudes.

  Even when the second specific example of the design variables related to the spatial light modulator 14 is used, the effect that can be enjoyed when the first specific example of the design variables related to the spatial light modulator 14 is used is preferably enjoyed. It is possible. In addition, in the second specific example, the above-described effects can be suitably enjoyed even when the reflection characteristics of the mirror group 140-1 different from the reflection surface 141a are different for each polarization component.

(2-3-3) Third Specific Example of Design Variable Related to Spatial Light Modulator Next, referring to FIGS. 9A to 9D, design variables related to the spatial light modulator 14 will be described. The third specific example will be described. FIG. 9A is a graph showing reflection amplitudes r (0) and r (π) expressed on a complex plane. FIGS. 9B to 9D are plan views showing examples of the mirror group 140-2 used to specify the reflection amplitudes r (0) and r (π) represented by complex numbers, respectively. is there.

  In the third specific example of the design variables related to the spatial light modulator 14, the reflection amplitude of the mirror group 140-1 is represented by a complex number, as compared with the first specific example of the design variables related to the spatial light modulator 14. Is different. The third specific example of the design variables related to the spatial light modulator 14 is different from the first specific example of the design variables related to the spatial light modulator 14 in that the reflection amplitude of the mirror group 140-1 includes a complex component. They differ in that they gain. The other components of the third specific example of the design variables related to the spatial light modulator 14 may be the same as the other components of the first specific example of the design variables related to the spatial light modulator 14. For this reason, the same components as those in the first specific example of the design variables related to the spatial light modulator 14 are denoted by the same reference numerals, and detailed description thereof will be omitted.

  Specifically, for example, the reflection amplitudes r (0) and r (π) are parameters specified by Expressions 4 and 5, respectively. Note that R (0) is the reflectance of the mirror group 140-1 including the single mirror element 141 in the 0 state. R (π) is the reflectivity of the mirror group 140-1 including the single mirror element 141 in the π state. φ is the phase of the wavefront of the exposure light EL3 obtained when the mirror group 140-1 including the single mirror element 141 in the 0 state reflects the exposure light EL2, and the single mirror element 141 in the π state. Is the difference between the phase of the wavefront of the exposure light EL3 and the phase of the wavefront of the exposure light EL3 obtained by reflecting the exposure light EL2 by the mirror group 140-1.

  The reflection amplitude r (0) specified by Expression 4 and the reflection amplitude r (π) specified by Expression 5 are two angles forming an angle corresponding to a phase difference φ on a complex plane shown in FIG. It can be specified as a vector. In the examples shown in Expressions 4 and 5, and FIG. 9A, the reflection amplitude r (0) is represented by a real number, while the reflection amplitude r (π) is represented by a complex number. However, as can be seen from the graph shown in FIG. 9A, as long as the vector specifying the reflection amplitude r (0) and the vector specifying the reflection amplitude r (π) form an angle corresponding to the phase difference φ, the reflection While the amplitude r (0) is represented by a complex number, the reflection amplitude r (π) may be represented by a real number. Alternatively, both the reflection amplitudes r (0) and r (π) may be represented by complex numbers. However, from the viewpoint of reducing the number of variables required to specify the reflection amplitudes r (0) and r (π), one of the reflection amplitudes r (0) and r (π) is represented by a real number. On the other hand, the other of the reflection amplitudes r (0) and r (π) is represented by a complex number.

  In the third specific example, the reflection amplitudes r (0) and r (π) can be specified from the reflectance R (0), the reflectance R (π), and the phase difference φ as shown in Expressions 4 and 5. is there. As described above, the reflectance R (0) and the reflectance R (π) can be specified using a simulation model or the like. However, the reflectance R (0) is equivalent to the reflectance R (0,0) of the mirror group 140-2 including the two mirror elements 141 in the 0 state, as shown in FIG. 9B. The reflectance R (π) is equivalent to the reflectance R (π, π) of the mirror group 140-2 including the two mirror elements 141 in the π state, as shown in FIG. 9C. Therefore, in order to specify the reflection amplitudes r (0) and r (π), at least one of the reflectance R (0) and the reflectance R (0,0), and the reflectance R (π) and the reflectance R At least one of (π, π) may be specified. The phase difference φ can be specified based on Expression 6. Note that R (0, π) is the reflectance of the mirror group 140-2 including the single mirror element 141 in the 0 state and the single mirror element 141 in the π state, and as described above, It can be specified using a model or the like.

Therefore, even when at least one of the reflection amplitudes r (0) and r (π) is represented by a complex number, the CPU 21 uses the simulation model or the like to reflect the reflectance R (0) or the reflectance R (0). , 0), the reflectance R (π) or the reflectance R (π, π) and the reflectance R (0, π), whereby the reflection amplitudes r (0) and r (π) can be suitably specified. It is.

  Here, with reference to FIGS. 10A and 10B, the reflection amplitude r (0) specified when the above-described specific numerical values are applied to the simulation model shown in FIG. ) And r (π) will be described. FIGS. 10A and 10B show two mirror elements 141 adjacent to each other along the Y-axis direction and a gap 142 (or two mirror elements 141) located between the two mirror elements 141, respectively. 5 is a graph showing the reflectance of a mirror group 140-2 including a gap 142) distributed along at least one outer edge of the mirror group 140-2.

  FIG. 10A shows the reflectance R (0,0) specified using the simulation model when the distance d4 between each mirror element 141 and the upper surface of the first support substrate portion 143a is 210 nanometers. , R (π, π) and R (0, π). As shown in FIG. 10A, according to the simulation model, the reflectivity R (0,0) is 0.798404920755 (= 79.804409755%), and the reflectivity R (π, π) is 0.728422390625 ( = 72.842390625%), and the reflectance R (0, π) is 0.00551256243875 (= 0.512267243875%). As a result, according to Equation 6 described above, the phase difference φ is −0.94775245π. For this reason, the CPU 21 can preferably specify the reflection amplitudes r (0) and r (π) expressed by complex numbers.

  FIG. 10B shows the reflectance R (0,0) specified using the simulation model when the distance d4 between each mirror element 141 and the upper surface of the first support substrate portion 143a is 230 nanometers. , R (π, π) and R (0, π). As shown in FIG. 10B, according to the simulation model, the reflectance R (0, 0) is 0.66534545632 (= 66.536456432%), and the reflectance R (π, π) is 0.8423836758 ( = 84.23837658%) and the reflectance R (0, π) is 0.0048019197165 (= 0.48019197165%). As a result, according to Expression 6 described above, the phase difference φ is −0.9655156375π. For this reason, the CPU 21 can preferably specify the reflection amplitudes r (0) and r (π) expressed by complex numbers.

  Even when the third specific example of the design variables related to the spatial light modulator 14 is used, the effect that can be enjoyed when the first specific example of the design variables related to the spatial light modulator 14 is used is preferably enjoyed. It is possible.

  In addition, in the third specific example, the following technical effects can be further enjoyed. Specifically, as described above, the spatial light modulator 14 sets each mirror element 141 to the 0 state or the zero state by making the reflection surface 141a of each mirror element 141 coincide with one of the reference plane A1 and the displacement plane A2. Transition to the π state. However, there is a possibility that there is a mirror element 141 that cannot make the reflecting surface 141a coincide with either the reference plane A1 or the displacement plane A2 due to the manufacturing error of the spatial light modulator 14. For example, a mirror element that can only match the reflecting surface 141a with any plane located above the reference plane A1, between the reference plane A1 and the displacement plane A2, or below the displacement plane A2. 141 may be present. The reflection amplitude of the mirror group 140-1 having the reflection surface 141a that cannot be matched with either the reference plane A1 or the displacement plane A2 has an error of a complex number component that is not originally intended or is not preferable. May be given. Therefore, as described in the third specific example, if the design variables related to the spatial light modulator 14 are expressed by complex numbers, the design variables include the reflection surface 141a that cannot be matched with either the reference plane A1 or the displacement plane A2. The influence of the error of the complex number component given to the reflection amplitude of the mirror group 140-1 is reduced or eliminated. That is, in the third specific example, the influence of the error of the complex component added to the reflection amplitude of the mirror group 140-1 including the reflection surface 141a that cannot be matched with either the reference plane A1 or the displacement plane A2 is reduced or Modulation pattern information is generated so that the desired device pattern can be preferably transferred to the wafer 161 so as to be excluded. As a result, the exposure apparatus 1 can expose the wafer 161 using the spatial light modulator 14 controlled based on the modulation pattern information so as to transfer a desired device pattern more appropriately.

(2-3-4) Fourth Specific Example of Design Variable Related to Spatial Light Modulator Next, referring to FIGS. 11A to 11D, design variables related to the spatial light modulator 14 A fourth specific example will be described. FIGS. 11A to 11D are plan views each showing a mirror group 140-2 that defines a fourth specific example of the design variables related to the spatial light modulator 14.

  The fourth specific example of the design variables related to the spatial light modulator 14 is different from the first specific example of the design variables related to the spatial light modulator 14 in the mirror group 140-2 including the two mirror elements 141. The difference is that the reflection amplitude is used. The other components of the fourth specific example of the design variables related to the spatial light modulator 14 may be the same as the other components of the first specific example of the design variables related to the spatial light modulator 14. For this reason, the same components as those in the first specific example of the design variables related to the spatial light modulator 14 are denoted by the same reference numerals, and detailed description thereof will be omitted.

  Specifically, as shown in FIGS. 11A to 11D, a fourth specific example of the design variables related to the spatial light modulator 14 is a plurality of mirror elements 141 provided in the spatial light modulator 14. Represents the reflection amplitude of each mirror group 140-2 in the case where is divided in units of a mirror group 140-2 including two mirror elements 141 adjacent to each other. Hereinafter, for convenience of explanation, it is assumed that the two mirror elements 141 constituting each mirror group 140-2 are a first mirror element 141-21 and a second mirror element 141-22.

  The mirror group 140-2 includes a first mirror element 141-21 and a second mirror element 141-22 adjacent to each other along a predetermined direction. Specifically, mirror group 140-2 includes a reflecting surface 141a of first mirror element 141-21 and a reflecting surface 141a of second mirror element 141-22. In other words, the mirror group 140-2 includes a portion where the reflection surface 141a of the first mirror element 141-21 is located and a portion where the reflection surface 141a of the second mirror element 141-22 is located. In the example illustrated in FIGS. 11A to 11D, the first mirror element 141-21 and the second mirror element 141-22 are adjacent to each other along the X-axis direction. However, the first mirror element 141-21 and the second mirror element 141-22 may be adjacent to each other along the Y-axis direction.

  The mirror group 140-2 includes, in addition to the first mirror element 141-21 and the second mirror element 141-22, a first mirror element 141-21 and another mirror element 141 adjacent to the first mirror element 141-21. And does not constitute the first mirror element 141-21 (particularly, does not constitute the reflection surface 141a). Examples of another mirror element 141 adjacent to the first mirror element 141-21 include a second mirror element 141-22 and another mirror element 141 different from the second mirror element 141-22. Further, the mirror group 140-2 is located between the second mirror element 141-22 and another mirror element 141 adjacent to the second mirror element 141-22, and does not constitute the second mirror element 141-22. (Particularly, does not constitute the reflective surface 141a). Examples of another mirror element 141 adjacent to the second mirror element 141-22 include a first mirror element 141-21 and another mirror element 141 different from the first mirror element 141-21. In other words, the mirror group 140-2 is adjacent to at least one of the first mirror element 141-21 and the second mirror element 141-22 and does not constitute the first mirror element 141-21 and the second mirror element 141-22. (Particularly, does not constitute the reflective surface 141a). For example, the mirror group 140-2 includes a gap 142 (or a part of such a gap 142) distributed along at least one outer edge of the first mirror element 141-21 and the second mirror element 141-22. .

  In the fourth specific example as well, as in the first specific example, the reflection amplitude of the mirror group 140-2 passes through the first mirror element 141-21 and the second mirror element 141-22 forming the mirror group 140-2. This parameter takes into account not only the reflectance of the exposure light EL2 described above but also the reflectance of the exposure light EL2 through the gap 142 in the mirror group 140-2. In other words, the reflection amplitude of the mirror group 140-2 is not only the reflection of the exposure light EL2 via the reflection surface 141a of the first mirror element 141-21 and the second mirror element 141-22 constituting the mirror group 140-2, but also the reflection amplitude. This parameter also takes into account the reflection of the exposure light EL2 via the structure that the exposure light EL2 propagating through the gap 142 in the mirror group 140-2 can reach.

  Since the mirror group 140-2 includes two mirror elements 141, the number of mirror groups 140-2 is half the number of mirror elements 141 included in the spatial light modulator 14. Therefore, the total number N4 of design variables related to the spatial light modulator 14 (that is, the number of mirror groups 140-2) is half of the number of mirror elements 141. Therefore, each design variable related to the spatial light modulator 14 becomes a parameter corresponding to the corresponding two mirror elements 141. As a result, the N4 design variables associated with spatial light modulator 14 indicate the reflection amplitudes of N4 mirror groups 140-2 each including two corresponding mirror elements 141. That is, the design variables related to the spatial light modulator 14 indicate the reflection amplitudes of the N4 mirror groups 140-2 each including two mirror elements 141.

  As shown in FIG. 11A, both the first mirror element 141-21 and the second mirror element 141-22 can be in the 0 state. Further, as shown in FIG. 11B, both the first mirror element 141-21 and the second mirror element 141-22 can be in the π state. Further, as shown in FIG. 11C, the first mirror element 141-21 can be in the 0 state while the second mirror element 141-22 is in the π state. Further, as shown in FIG. 11D, the first mirror element 141-21 can be in the π state while the second mirror element 141-22 can be in the 0 state. Therefore, the possible values of each of the N4 design variables related to the spatial light modulator 14 are the mirror group 140-2 including the first mirror element 141-21 and the second mirror element 141-22, both of which are in the 0 state. And the reflection amplitude r (π, π) of the mirror group 140-2 including the first mirror element 141-21 and the second mirror element 141-22, which are both in the π state, and the 0 state. The reflection amplitude r (0, π) of the mirror group 140-2 including the first mirror element 141-21 and the second mirror element 141-22 in the π state, and the first mirror element 141-21 in the π state And the reflection amplitude r (π, 0) of the mirror group 140-2 including the second mirror element 141-22 in the 0 state. Therefore, when setting or adjusting the design variables related to the spatial light modulator 14, the CPU 21 sets each of the N4 design variables to the reflection amplitude r according to the device pattern to be transferred to the wafer 161 and the like. (0, 0), reflection amplitude (π, π), reflection amplitude (0, π), and reflection amplitude r (π, 0).

  However, depending on conditions, the reflection amplitude (0, π) may be the same as the reflection amplitude (π, 0). In this case, the CPU 21 may set each of the N4 design variables to one of the reflection amplitude r (0, 0), the reflection amplitude (π, π), and the reflection amplitude (0, π). .

  The CPU 21 determines the N4 design variables related to the spatial light modulator 14 by adjusting the design variables related to the spatial light modulator 14 so that the cost function CF satisfies the termination condition. When the N4 design variables related to the spatial light modulator 14 are determined, the states of the N4 × 2 mirror elements 141 constituting the N4 mirror group 140-2 are determined. Specifically, when the design variable indicating the reflection amplitude of a certain mirror group 140-2 is determined to be the reflection amplitude r (0, 0), the two mirror elements 141 constituting the certain mirror group 140-2 are determined. Are determined to be both 0 states. Similarly, when the design variable indicating the reflection amplitude of a certain mirror group 140-2 is determined to be the reflection amplitude r (π, π), the state of the two mirror elements 141 forming the certain mirror group 140-2 is determined. Are determined to be both π states. Similarly, when the design variable indicating the reflection amplitude of a certain mirror group 140-2 is determined to be the reflection amplitude r (0, π) or the reflection amplitude (π, 0), the certain mirror group 140-2 is configured. It is determined that one state of the two mirror elements 141 to be changed to the 0 state and the other state of the two mirror elements 141 constituting the certain mirror group 140-2 to be the π state. . As a result, the CPU 21 can generate modulation pattern information that defines the distribution of states of the plurality of mirror elements 141.

  Even when the fourth specific example of the design variables related to the spatial light modulator 14 is used, the effect that can be enjoyed when the first specific example of the design variables related to the spatial light modulator 14 is used is preferably enjoyed. It is possible. In addition, in the fourth specific example, the reflection amplitude taking into account not only the gap 142 distributed along the outer edge of the single mirror element 141 but also the gap 142 between two adjacent mirror elements 141 is a design variable. Used as For this reason, modulation pattern information capable of more appropriately transferring a desired device pattern to the wafer 161 is generated.

(2-3-5) Fifth Specific Example of Design Variable Related to Spatial Light Modulator Next, referring to FIGS. 12A and 12B, design variables related to the spatial light modulator 14 A fifth specific example will be described. FIG. 12A is a plan view illustrating a mirror group 140-4 that defines a fifth specific example of a design variable related to the spatial light modulator 14. FIG. FIG. 12B is a table showing combinations of states that four mirror elements 141 constituting the mirror group 140-4 can take.

  The fifth specific example of the design variables related to the spatial light modulator 14 is different from the first specific example of the design variables related to the spatial light modulator 14 in that N (where N is an integer of 3 or more) N The difference is that the reflection amplitude of the mirror group 140-N including the mirror element 141 is used. The other components of the fifth specific example of the design variables related to the spatial light modulator 14 may be the same as the other components of the first specific example of the design variables related to the spatial light modulator 14. For this reason, the same components as those in the first specific example of the design variables related to the spatial light modulator 14 are denoted by the same reference numerals, and detailed description thereof will be omitted.

  Hereinafter, for simplification of the description, an example in which the reflection amplitude of the mirror group 140-4 including the four mirror elements 141 is used as a design variable will be described. However, the following description is also applicable to an example in which the reflection amplitude of the mirror group 140-N including three mirror elements 141 or five or more mirror elements 141 is used as a design variable.

  Specifically, as shown in FIG. 12A, a fifth specific example of the design variable related to the spatial light modulator 14 is that a plurality of mirror elements 141 included in the spatial light modulator 14 are arranged in 2 rows × 2 columns. 5 shows the reflection amplitude of each mirror group 140-4 when divided in units of a mirror group 140-4 including four mirror elements 141 adjacent to each other in a matrix. However, the first mirror element 141-41 to the fourth mirror element 141-44 may be adjacent to each other in any manner. Hereinafter, for convenience of description, the four mirror elements 141 that constitute each mirror group 140-4 are a first mirror element 141-41 and a second mirror that is adjacent to the first mirror element 141-41 along the X-axis direction. The element 141-42, the third mirror element 141-43 adjacent to the first mirror element 141-41 along the Y-axis direction, and the third mirror element adjacent to the second mirror element 141-42 along the Y-axis direction. The fourth mirror element 141-44 is adjacent to the fourth mirror element 141-43 along the X-axis direction.

  The mirror group 140-4 includes first to fourth mirror elements 141-41 to 141-44 adjacent to each other in a matrix of 2 rows × 2 columns. Specifically, the mirror group 140-4 includes a reflection surface 141a of the first mirror element 141-41, a reflection surface 141a of the second mirror element 141-42, a reflection surface 141a of the third mirror element 141-43, and a fourth surface. Includes the reflective surface 141a of the mirror element 141-44. In other words, the mirror group 140-4 includes a portion where the reflection surface 141a of the first mirror element 141-41 is located, a portion where the reflection surface 141a of the second mirror element 141-42 is located, and a portion of the third mirror element 141-43. It includes a portion where the reflection surface 141a is located and a portion where the reflection surface 141a of the fourth mirror element 141-44 is located.

  The mirror group 140-4 includes, in addition to the first to fourth mirror elements 141-41 to 141-44, a first mirror element 141-41 and another mirror element 141 adjacent to the first mirror element 141-41. And a portion that does not constitute the first mirror element 141-41 (in particular, does not constitute the reflection surface 141a). As an example of another mirror element 141 adjacent to the first mirror element 141-41, the second mirror element 141-42, the fourth mirror element 141-44, the second mirror element 141-42, and the fourth mirror element 141 are provided. Another mirror element 141 different from -44 is given. Further, the mirror group 140-4 is located between the second mirror element 141-42 and another mirror element 141 adjacent to the second mirror element 141-42, and does not constitute the second mirror element 141-42. (Particularly, does not constitute the reflective surface 141a). Examples of another mirror element 141 adjacent to the second mirror element 141-42 include a first mirror element 141-41, a third mirror element 141-43, a first mirror element 141-41, and a third mirror element 141. Another mirror element 141 different from -43 is given. Further, the mirror group 140-4 is located between the third mirror element 141-43 and another mirror element 141 adjacent to the third mirror element 141-43, and does not constitute the third mirror element 141-43. (Particularly, does not constitute the reflective surface 141a). As an example of another mirror element 141 adjacent to the third mirror element 141-43, the second mirror element 141-42, the fourth mirror element 141-44, the second mirror element 141-42, and the fourth mirror element 141 are provided. Another mirror element 141 different from -44 is given. Further, the mirror group 140-4 is located between the fourth mirror element 141-44 and another mirror element 141 adjacent to the fourth mirror element 141-44, and does not constitute the fourth mirror element 141-44. (Particularly, does not constitute the reflective surface 141a). As an example of another mirror element 141 adjacent to the fourth mirror element 141-44, the first mirror element 141-41, the third mirror element 141-43, the first mirror element 141-41, and the third mirror element 141. Another mirror element 141 different from -43 is given. In other words, the mirror group 140-4 is adjacent to at least one of the first mirror element 141-41 to the fourth mirror element 141-44 and constitutes the first mirror element 141-41 to the fourth mirror element 141-44. (Particularly, does not constitute the reflection surface 141a). For example, mirror group 140-4 includes a gap 142 (or a portion of such a gap) distributed along at least one outer edge of first mirror element 141-41 to fourth mirror element 141-44.

  Also in the fifth specific example, similarly to the first specific example, the reflection amplitude of the mirror group 140-4 passes through the first mirror element 141-41 to the fourth mirror element 141-44 of the mirror group 140-4. This parameter takes into consideration not only the reflectance of the exposure light EL2 described above but also the reflectance of the exposure light EL2 via the gap 142 in the mirror group 140-4. That is, the reflection amplitude of the mirror group 140-4 is not only the reflection of the exposure light EL2 from the first mirror element 141-41 constituting the mirror group 140-4 via the reflection surface 141a of the fourth mirror element 141-44, but also the reflection amplitude. This parameter also takes into account the reflection of the exposure light EL2 through a structure that the exposure light EL2 propagating through the gap 142 in the mirror group 140-4 can reach.

  Since the mirror group 140-4 includes four mirror elements 141, the number of mirror groups 140-4 is １ ／ of the number of mirror elements 141. Therefore, the total number N4 of design variables related to the spatial light modulator 14 (that is, the number of mirror groups 140-4) is １ ／ of the number of mirror elements 141. Thus, each design variable related to the spatial light modulator 14 becomes a parameter corresponding to the corresponding four mirror elements 141. As a result, the N4 design variables associated with the spatial light modulator 14 indicate the reflection amplitudes of the N4 mirror groups 140-4 each including the corresponding four mirror elements 141. That is, the design variables related to the spatial light modulator 14 indicate the reflection amplitudes of the N4 mirror groups 140-4 each including four mirror elements 141.

  As shown in FIG. 12B, there are 16 possible combinations (arrangements) of the states of the first mirror element 141-41 to the fourth mirror element 141-44 constituting the mirror group 140-4. Specifically, one of the 16 types of combinations is combination # 1 in which all of the first to fourth mirror elements 141-41 to 141-44 are in the 0 state. One of the 16 types of combinations is a combination # 2 in which the first mirror element 141-41 is in the π state and the second mirror element 141-42 to the fourth mirror element 141-44 are in the 0 state. One of the 16 combinations is a combination in which the second mirror element 141-42 is in the π state and the first mirror element 141-41, the third mirror element 141-43, and the fourth mirror element 141-44 are in the 0 state. # 3. One of the 16 combinations is a combination in which the third mirror element 141-43 is in the π state and the first mirror element 141-41, the second mirror element 141-42, and the fourth mirror element 141-44 are in the 0 state. # 4. One of the 16 types of combinations is combination # 5 in which the fourth mirror element 141-44 is in the π state and the first mirror element 141-41 to the third mirror element 141-43 are in the 0 state. One of the 16 combinations is a combination in which the first mirror element 141-41 and the second mirror element 141-42 are in the π state and the third mirror element 141-43 and the fourth mirror element 141-44 are in the 0 state. # 6. One of the 16 combinations is a combination in which the first mirror element 141-41 and the third mirror element 141-43 are in the π state and the second mirror element 141-42 and the fourth mirror element 141-44 are in the 0 state. # 7. One of the 16 combinations is a combination in which the first mirror element 141-41 and the fourth mirror element 141-44 are in the π state and the second mirror element 141-42 and the third mirror element 141-43 are in the 0 state. # 8. One of the 16 combinations is a combination in which the second mirror element 141-42 and the third mirror element 141-43 are in the π state and the first mirror element 141-41 and the fourth mirror element 141-44 are in the 0 state. # 9. One of the 16 combinations is a combination in which the second mirror element 141-42 and the fourth mirror element 141-44 are in the π state and the first mirror element 141-41 and the third mirror element 141-43 are in the 0 state. # 10. One of the 16 combinations is a combination in which the third mirror element 141-43 and the fourth mirror element 141-44 are in the π state and the first mirror element 141-41 and the second mirror element 141-42 are in the 0 state. # 11. One of the 16 combinations is a combination # 12 in which the first mirror element 141-41 to the third mirror element 141-43 are in the π state and the fourth mirror element 141-44 is in the 0 state. One of the 16 combinations is a combination in which the first mirror element 141-41, the second mirror element 141-42, and the fourth mirror element 141-44 are in the π state and the third mirror element 141-43 is in the 0 state. # 13. One of the 16 combinations is a combination in which the first mirror element 141-41, the third mirror element 141-43, and the fourth mirror element 141-44 are in the π state and the second mirror element 141-42 is in the 0 state. # 14. One of the 16 types of combinations is a combination # 15 in which the second to fourth mirror elements 141-42 to 141-44 are in the π state and the first mirror element 141-41 is in the 0 state. One of the 16 combinations is combination # 16 in which all of the first to fourth mirror elements 141-41 to 141-44 are in the π state.

  Therefore, the possible values of each of the N4 design variables related to the spatial light modulator 14 are the reflection amplitude r (0, 0, 0, 0) corresponding to the combination # 1 and the reflection amplitude r corresponding to the combination # 2. r (π, 0,0,0), reflection amplitude r (0, π, 0,0) corresponding to combination # 3, reflection amplitude r (0,0, π, 0) corresponding to combination # 4, combination The reflection amplitude r (0,0,0, π) corresponding to # 5, the reflection amplitude r (π, π, 0,0) corresponding to combination # 6, and the reflection amplitude r (π, 0) corresponding to combination # 7. , Π, 0), reflection amplitude r (π, 0, 0, π) corresponding to combination # 8, reflection amplitude r (0, π, π, 0) corresponding to combination # 9, and corresponding to combination # 10. Reflection amplitude r (0, π, 0, π), reflection amplitude r (0, 0, π, π) corresponding to combination # 11, set The reflection amplitude r (π, π, π, 0) corresponding to the combination # 12, the reflection amplitude r (π, π, 0, π) corresponding to the combination # 13, and the reflection amplitude r (π, π, 0, π, π), the reflection amplitude r (0, π, π, π) corresponding to the combination # 15, or the reflection amplitude r (π, π, π, π) corresponding to the combination # 16. Therefore, when setting or adjusting the design variables related to the spatial light modulator 14, the CPU 21 sets each of the N4 design variables to each of these 16 types according to the device pattern to be transferred to the wafer 161 and the like. Is set to one of the reflection amplitudes.

  However, depending on conditions, at least two of the above 16 types of reflection amplitudes may be the same. In this case, the CPU 21 may use any one of two or more types of reflection amplitudes that are the same.

  The CPU 21 determines the N4 design variables related to the spatial light modulator 14 by adjusting the design variables related to the spatial light modulator 14 so that the cost function CF satisfies the termination condition. When the N4 design variables related to the spatial light modulator 14 are determined, the states of the N4 × 4 mirror elements 141 constituting the N4 mirror group 140-4 are determined. As a result, the CPU 21 can generate modulation pattern information that defines the distribution of states of the plurality of mirror elements 141.

  Even when the fifth specific example of the design variable related to the spatial light modulator 14 is used, the effect that can be enjoyed when the first specific example of the design variable related to the spatial light modulator 14 is used is preferably enjoyed. It is possible. In addition, in the fifth specific example, not only the gap 142 distributed along the outer edge of the single mirror element 141 but also the gap 142 between two mirror elements 141 adjacent to each other along the predetermined direction is considered. The reflection amplitude is used as a design variable. In particular, in the fifth specific example, not only the gap 142 between two mirror elements 141 adjacent to each other along only one direction, but also the two mirror elements 141 adjacent to each other along a plurality of different directions. The reflection amplitude in consideration of the gap 142 between them is used as a design variable. For example, in the fifth specific example, the gap 142 between two mirror elements 141 adjacent to each other along the X-axis direction, the gap 142 between two mirror elements 141 adjacent to each other along the Y-axis direction, and the X-axis The reflection amplitude is also used as a design variable in consideration of a gap 142 between two mirror elements 141 adjacent to each other along a direction or a diagonal direction intersecting with the Y-axis direction (for example, a diagonal direction of the mirror elements 141). For this reason, modulation pattern information capable of more appropriately transferring a desired device pattern to the wafer 161 is generated.

(2-3-6) Sixth Specific Example of Design Variable Related to Spatial Light Modulator Next, a sixth specific example of the design variable related to the spatial light modulator 14 will be described with reference to FIG. FIG. 13 is a plan view showing a mirror group 140-1 that defines a sixth specific example of the design variables related to the spatial light modulator 14.

  The sixth specific example of the design variables related to the spatial light modulator 14 is different from the first specific example of the design variables related to the spatial light modulator 14 in that the CPU 21 includes a mirror group including a single mirror element 141. The difference is that the reflection amplitude of 140-1 is specified using the reflection amplitude of mirror group 140-2 including two mirror elements 141. Other components of the sixth specific example of the design variables related to the spatial light modulator 14 may be the same as the other components of the first specific example of the design variables related to the spatial light modulator 14. For this reason, the same components as those in the first specific example of the design variables related to the spatial light modulator 14 are denoted by the same reference numerals, and detailed description thereof will be omitted.

  Specifically, as shown in FIG. 13, the mirror group 140-1 including the first mirror element 141-1 is adjacent to the first mirror element 141-1 and the first mirror element 141-1 and has the first mirror element. The mirror group 140-2 # 1 includes the second mirror element 141-2 located on the −Y direction side of the element 141-1. Similarly, a mirror group 140-1 including the first mirror element 141-1 is adjacent to the first mirror element 141-1 and the first mirror element 141-1 and on the −X direction side of the first mirror element 141-1. Is included in the mirror group 140-2 # 2 including the third mirror element 141-3 located at the position # 1. Similarly, the mirror group 140-1 including the first mirror element 141-1 is adjacent to the first mirror element 141-1 and the first mirror element 141-1 and on the + Y direction side of the first mirror element 141-1. It is included in the mirror group 140-2 # 3 including the fourth mirror element 141-4 located. Similarly, a mirror group 140-1 including the first mirror element 141-1 is adjacent to the first mirror element 141-1 and the first mirror element 141-1 and on the + X direction side of the first mirror element 141-1. The mirror group 140-2 # 4 including the located fifth mirror element 141-5 is included.

  In the sixth specific example, the CPU 21 specifies the reflection amplitude r # 1 of the mirror group 140-2 # 1 and the reflection amplitude r # 2 of the mirror group 140-2 # 2 in order to specify the reflection amplitude of the mirror group 140-1. , The average of the reflection amplitude r # 3 of the mirror group 140-2 # 3 and the reflection amplitude r # 4 of the mirror group 140-2 # 4. The CPU 21 handles the calculated average value as the reflection amplitude of the mirror group 140-1. That is, the CPU 21 specifies the reflection amplitude of the mirror group 140-1 using the mathematical expression of the reflection amplitude of the mirror group 140-1 = (r # 1 + r # 2 + r # 3 + r # 4) / 4.

  For example, in the example shown in FIG. 13, the first mirror element 141-1 is in the 0 state, the second mirror element 141-2 is in the π state, the third mirror element 141-3 is in the 0 state, and the fourth mirror element 141-3 is in the 0 state. The mirror element 141-4 is in the π state, and the fifth mirror element 141-5 is in the 0 state. Therefore, the reflection amplitude of the mirror group 140-2 # 1 becomes the reflection amplitude r (0, π), the reflection amplitude of the mirror group 140-2 # 2 becomes the reflection amplitude r (0, 0), and the mirror group 140 The reflection amplitude of −2 # 3 is a reflection amplitude r (0, π), and the reflection amplitude of the mirror group 140-2 # 4 is a reflection amplitude r (0, 0). Therefore, in the example shown in FIG. 13, the reflection amplitude of the mirror group 140-1 is (r (0, π) + r (0, 0) + r (0, π) + r (0, 0)) / 4. .

  Even when the sixth specific example of the design variables related to the spatial light modulator 14 is used, the effect that can be enjoyed when the first specific example of the design variables related to the spatial light modulator 14 is used is preferably enjoyed. It is possible.

  The CPU 21 multiplies at least one of the reflection amplitudes of the mirror groups 140-2 # 1 to 140-2 # 4 by a weighting coefficient, and then multiplies the mirror groups 140-2 # 1 to the mirror group. The average value of the reflection amplitude of 140-2 # 4 may be calculated. For example, the weighting coefficient corresponding to the reflection amplitude r # 1 of the mirror group 140 # 1 is w # 1, the weighting coefficient corresponding to the reflection amplitude r # 2 of the mirror group 140 # 2 is w # 2, and the mirror group 140 # Assuming that the weighting coefficient corresponding to the reflection amplitude r # 3 of the mirror group 140 # 4 is w # 3 and the weighting coefficient corresponding to the reflection amplitude r # 4 of the mirror group 140 # 4 is w # 4, the CPU 21 The reflection amplitude of the mirror group 140-1 is specified by using a formula of reflection amplitude = (r # 1 × w # 1 + r # 2 × w # 2 + r # 3 × w # 3 + r # 4 × w # 4) / 4. Is also good.

  The CPU 21 may specify the reflection amplitude of the mirror group 140-1 using an arbitrary function F having the reflection amplitude of the mirror group 140-2 # 1 to the mirror group 140-2 # 4 as a variable. That is, the CPU 21 specifies the reflection amplitude of the mirror group 140-1 by using the formula of reflection amplitude of the mirror group 140-1 = F (r # 1, r # 2, r # 3, r # 4). Is also good.

  The CPU 21 specifies the reflection amplitude of the mirror group 140-1 including the single mirror element 141 using the reflection amplitude of the mirror group 140 including M1 (M1 is an integer of 2 or more) mirror elements 141. You may. The CPU 21 specifies the reflection amplitude of the mirror group 140-2 including the two mirror elements 141 using the reflection amplitude of the mirror group 140 including the M2 (M2 is an integer of 3 or more) mirror elements 141. Is also good. The CPU 21 sets the reflection amplitude of the mirror group 140 including L (where L is an integer equal to or greater than 1) mirror elements 140 and a mirror including M3 (where M3 is an integer satisfying L <M) mirror elements 141. The identification may be performed using the reflection amplitude of the group 140-M3.

(2-3-7) Seventh Specific Example of Design Variable Related to Spatial Light Modulator Next, a seventh specific example of the design variable related to the spatial light modulator 14 will be described. The seventh specific example of the design variables related to the spatial light modulator 14 is different from the first specific example of the design variables related to the spatial light modulator 14 in that the mirror group 140 including the mirror element 141 in which the defect occurs is compared. The difference is that a reflection amplitude considering a defect is used as the reflection amplitude of −1. Other components of the seventh specific example of the design variables related to the spatial light modulator 14 may be the same as the other components of the first specific example of the design variables related to the spatial light modulator 14. For this reason, the same components as those in the first specific example of the design variables related to the spatial light modulator 14 are denoted by the same reference numerals, and detailed description thereof will be omitted.

  As described above, usually, the design variable indicating the reflection amplitude of the mirror group 140 is set to one of the reflection amplitudes r (0) and r (π). However, the reflection amplitude of the mirror group 140-1 including the mirror element 141 in which a defect has occurred (hereinafter, appropriately referred to as “defective mirror group 140-1”) is different from the reflection amplitudes r (0) and r (π). May be different. For this reason, if the design variable indicating the reflection amplitude of the defect mirror group 140-1 is uniformly set to one of the reflection amplitudes r (0) and r (π), a desired device pattern is suitable for the wafer 161. There is a possibility that the modulation pattern information that can be transferred to the target is not generated.

  Therefore, in the seventh specific example, the CPU 21 sets the design variable indicating the reflection amplitude of the defect mirror group 140-1 to the reflection amplitude r (defect) in consideration of the defect. Of course, if the reflection amplitude of the defective mirror group 140-1 matches one of the reflection amplitudes r (0) and r (π), the CPU 21 sets the design variable indicating the reflection amplitude of the defective mirror group 140-1 to: The reflection amplitude may be set to one of r (0) and r (π). Note that the CPU 21 can specify the reflection amplitude r (defect) using a simulation model or the like, similarly to the reflection amplitudes r (0) and r (π).

  In the seventh specific example, the amplitude of light (in other words, the state or characteristics of light) via the mirror element 141 having a defect and the mirror element 141 having no defect is adjusted to a desired amplitude which is a design value, for example. Therefore, it can be said that the CPU 21 obtains a drive amount for bringing the state of each mirror element 141 into a predetermined state by using information on the state of the mirror element 141 having a defect. That is, in the seventh specific example, the CPU 21 obtains defect information on the state of the defect of the mirror element 141 having a defect, and uses the defect information to determine whether the mirror element 141 has a defect and the defect has not occurred. In order to adjust the amplitude of the light from the mirror element 141 to a desired amplitude, a drive signal for setting the state of the defective mirror element 141 to the first state (0 state or π state) is obtained, and It can also be said that a drive signal for setting the state of the mirror element 141 in which no defect has occurred to the second state (0 state or π state) is obtained.

  Even when the seventh specific example of the design variables related to the spatial light modulator 14 is used, the effect that can be enjoyed when the first specific example of the design variables related to the spatial light modulator 14 is used is preferably enjoyed. It is possible. In addition, in the seventh specific example, when a defect occurs in the mirror element 141, the reflection amplitude considering the defect is used as a design variable. For this reason, even if a defect occurs in the mirror element 141, modulation pattern information is generated that allows a desired device pattern to be more appropriately transferred to the wafer 161.

  Note that an example of a defect occurring in the mirror element 141 is a defect in which at least a part of the reflection surface 141a is missing. An example of a defect occurring in the mirror element 141 is a defect in which the mirror element 141 sticks (that is, does not move). At this time, there is a possibility that the mirror element 141 is fixed in a state where the reflection surface 141a coincides with the reference plane A1 or the displacement plane A2. Alternatively, there is a possibility that the mirror element 141 is fixed in a state where the reflection surface 141a coincides with an arbitrary plane different from the reference plane A1 and the displacement plane A2. The arbitrary plane may be located above the reference plane A1, may be located between the reference plane A1 and the displacement plane A2, or may be located below the displacement plane A2. Good. An example of a defect that occurs in the mirror element 141 is a defect in which the hinge portion 144 cannot bend so that the reflecting surface 141a matches the reference plane A1 or the displacement plane A2.

  Further, as an example of a defect occurring in the mirror element 141, there is a defect in which the operation stroke of the mirror element 141 deviates from the design value d1 (stroke error occurs). An example of a defect that occurs in the mirror element 141 is a defect in which the mirror element 141 in the 0 state or the π state is inclined with respect to the reference plane A1 or the displacement plane A2 (the occurrence of a posture error). An example of a defect occurring in the mirror element 141 is a defect (reflection error occurrence) in which the reflectance deviates from a design value or an initial value due to deformation or lack of the reflection surface 141a of the mirror element 141, surface roughness, or the like. . An example of a defect occurring in the mirror element 141 is a defect in which the reflectance of the reflection surface 141a of the mirror element 141 changes depending on the position on the spatial light modulator 14. An example of a defect generated in the mirror element 141 is a defect in which the phase of light reflected by the mirror element 141 changes from a design value or an initial value.

  The design variable indicating the reflection amplitude of the defective mirror group 140-1 may be fixed to the reflection amplitude r (defect). That is, when the design variable is adjusted so that the cost function CF satisfies the termination condition, the design variable indicating the reflection amplitude of the defective mirror group 140-1 may not be adjusted. In this case, since the number of design variables to be adjusted is reduced, the processing load required for adjusting the design variables is reduced. In particular, when there is a defect in which the mirror element 141 is fixed (that is, the mirror element 141 does not move), it is effective to fix the design variable indicating the reflection amplitude of the defective mirror group 140-1 to the reflection amplitude r (defect). is there. When the mirror element 141 is fixed in a state where the reflection surface 141a of the mirror element 141 matches the reference plane A1, the reflection amplitude r (defect) matches r (0). When the mirror element 141 is fixed in a state where the reflection surface 141a of the mirror element 141 is aligned with the displacement plane A2, the reflection amplitude r (defect) matches r (π).

  The CPU 21 acquires the defect information on the defect mirror group 140-1 (or the defect information on the mirror element 141 in which the defect has occurred) and, based on the acquired information, calculates the reflection amplitude of the defect mirror group 140-1. The design variables shown may be set or adjusted. For example, as an example of defect information relating to the defect mirror group 140-1, there is first defect information for identifying a mirror element 141 in which a defect has occurred. In this case, based on the first defect information, the CPU 21 sets the design variable indicating the reflection amplitude of the defect mirror group 140-1 including the mirror element 141 having the defect to the reflection amplitude r (defect). Good. For example, as an example of defect information relating to the defect mirror group 140-1, there is second defect information indicating the type of defect that has occurred. In this case, based on the second defect information, the CPU 21 sets the design variable indicating the reflection amplitude of the defect mirror group 140-1 to a simulation model or the like appropriately set in accordance with the type of defect occurring in the mirror element 141. May be set to an appropriate reflection amplitude r (defect) specified by using. For example, as an example of defect information relating to the defective mirror group 140-1, third defect information indicating a state of a device pattern transferred to the wafer 161 via the mirror element 141 in which a defect has occurred is given. In particular, the third defect information indicates the state of the device pattern transferred to the wafer 161 when the spatial light modulator 14 is controlled to change the state of the mirror element 141 in which the defect has occurred (that is, the state of the mirror element 141). (A change in the state of the device pattern caused by the change in the state of the device pattern). In this case, the CPU 21 may determine, based on the third defect information, whether or not the state of the transferred device pattern is an ideal state or an allowable state in design. Further, when the state of the transferred device pattern is not in an ideal or design-permissible state, the CPU 21 determines that the mirror element 141 that has contributed to the transfer of the device pattern has a defect. Is also good. Further, when it is determined that a defect has occurred in the mirror element 141 that has contributed to the transfer of the device pattern, the CPU 21 determines the type or degree of the occurring defect (for example, the mirror element 141) based on the third defect information. 141 or the like, and the plane to which the reflecting surface 141a is fixed so as to match). Further, when it is determined that a defect has occurred in the mirror element 141 that has contributed to the transfer of the device pattern, the CPU 21 sets a design variable indicating the reflection amplitude of the defective mirror group 140-1 including the mirror element 141 as: The reflection amplitude may be set to r (defect).

(2-3-8) Eighth Specific Example of Design Variable Related to Spatial Light Modulator Next, an eighth specific example of the design variable related to the spatial light modulator 14 will be described with reference to FIG. FIG. 14 is a plan view showing a state of a plurality of mirror elements 141 provided in the spatial light modulator 14.

  As described above with reference to FIGS. 3A to 3C, in the present embodiment, at least a part of one exposure target surface 110 is at least a part of another adjacent exposure target surface 110. And may overlap. For example, at least a portion of one exposure target surface 110 may overlap with at least a portion of another exposure target surface 110 adjacent along the Y-axis direction. In this case, the device pattern to be transferred to the wafer 161 is transferred to the wafer 161 by a plurality of exposures. Therefore, the state distribution of the plurality of mirror elements 141 constituting the spatial light modulator 14 moves by a predetermined step amount along the Y-axis direction every pulse emission according to the device pattern to be transferred to the wafer 161. For example, as shown in FIG. 14, the state distribution of the plurality of mirror elements 141 corresponding to the line and space pattern moves by a predetermined amount along the Y-axis direction. The predetermined step amount corresponds to the movement amount of the exposure target surface 110 (in other words, the movement amount of the wafer stage 16). Specifically, the predetermined step amount corresponds to a value obtained by dividing the movement amount of the exposure target surface 110 (in other words, the movement amount of the wafer stage 16) by the projection magnification of the projection optical system 15.

  Therefore, when there is a mirror element 141 having a defect, a spatial image (that is, the exposure light EL3 on the wafer 161) of a certain area on the wafer 161 to which at least a part of the device pattern is transferred is transferred. The intensity distribution) is the sum of the aerial image caused by the light reflected by the mirror element 141 having the defect and the aerial image caused by the light reflected by the mirror element 141 having no defect.

  Specifically, as shown in FIG. 14, it is assumed that a certain mirror element 141-81 of the spatial light modulator 14 has a defect. In this case, as shown in the diagram on the left side of FIG. 14, the first pattern portion of the device pattern is transferred at the timing of performing exposure by the (k-1) th (where k is an integer of 2 or more) pulse emission. It is assumed that the first region portion on the wafer 161 to be exposed is exposed through the mirror element 141-81. On the other hand, from the mirror element 141-81, the scan direction (that is, the movement direction of the wafer stage 16 and the movement direction of the state distribution of the plurality of mirror elements 141, the direction opposite to the −Y axis direction in FIG. 14). Attention is paid to the mirror element 141-82 located at a position separated by a predetermined step amount toward. Then, at the timing of performing exposure by the (k−1) -th pulse emission, the second region portion on the wafer 161 to which the second pattern portion of the device pattern is transferred is exposed through the mirror element 141-82. You.

  Subsequently, as shown in the right side diagram of FIG. 14, at the timing when the exposure by the k-th pulse emission is performed, the second region portion on the wafer 161 to which the second pattern portion of the device pattern is transferred is Exposure is via a mirror element 141-81. That is, the aerial image in the second area portion on the wafer 161 to which the second pattern portion of the device pattern is transferred is the aerial image and the mirror element caused by the light reflected by the mirror element 141-81 having the defect. The sum of the aerial images resulting from the light reflected by the mirror element 141-82, which is located at a position separated by a predetermined step amount from the 141-81 in the direction opposite to the scanning direction and has no defect, has occurred.

  Further, at the timing when the exposure by the k-th pulse emission is performed, the first area portion on the wafer 161 to which the first pattern portion of the device pattern is transferred moves from the mirror element 141-81 toward the scanning direction. Exposure is performed via a mirror element 141-83 located at a position separated by a predetermined step amount. That is, the aerial image in the first region portion on the wafer 161 to which the first pattern portion of the device pattern is transferred is the aerial image and the mirror element caused by the light reflected by the mirror element 141-81 having the defect. The sum of the aerial images resulting from the light reflected by the mirror element 141-83, which is located at a position separated by a predetermined step amount from the 141-81 toward the scanning direction and has no defect, is obtained.

  In such a case, in the above-described seventh specific example, the defect is considered as the reflection amplitude of the mirror group 140-1 including the mirror element 141 having the defect (for example, the mirror element 141-81 in FIG. 14). The reflection amplitude is used. As a result, as described above, the aerial image caused by the light reflected by the defective mirror element 141 and the predetermined direction from the defective mirror element 141 toward the scan direction side or the opposite direction to the scan direction. The sum of the aerial images resulting from the light reflected by the defect-free mirror element 141 located at a position separated by the step amount is equal to the ideal aerial image used to transfer the desired device pattern onto the wafer 161. The design variables associated with the spatial light modulator 14 are suitably adjusted to match. As a result, modulation pattern information capable of appropriately transferring a desired device pattern to the wafer 161 is generated.

  On the other hand, in the eighth specific example, the reflection amplitude of the mirror group 140-1 including the mirror element 141 located at a position separated from the defective mirror element 141 by a predetermined step amount is changed by the mirror element having the defect. The value is uniformly fixed to the same value as the reflection amplitude of the mirror group 140-1 including the mirror 141. That is, not only the reflection amplitude of the mirror group 140-1 including the mirror element 141 having the defect, but also the mirror group including the mirror element 141 located at a position separated by a predetermined step amount from the mirror element 141 having the defect. As the reflection amplitude of 140-1, the reflection amplitude r (defect) in consideration of the defect is used.

  That is, the design variable indicating the reflection amplitude of the mirror group 140-1 including the mirror element 141 located at a position separated from the defective mirror element 141 by a predetermined step amount is substantially transferred to the wafer 161. Irrespective of the device pattern to be set, it is set based on a design variable indicating the reflection amplitude of the mirror group 140-1 including the mirror element 141 in which the defect has occurred. The design variable indicating the reflection amplitude of the mirror group 140-1 including the mirror element 141 located at a position separated by a predetermined step amount from the defective mirror element 141 is a mirror group including the defective mirror element 141. It is fixed uniformly to the same value as the design variable indicating the reflection amplitude of 140-1.

  Specifically, in the example shown in FIG. 14, each of the reflection amplitude of the mirror group 140-1 including the mirror element 141-82 and the reflection amplitude of the mirror group 140-1 including the mirror element 141-83 is a mirror. It is fixed to the reflection amplitude r (defect) of the mirror group 140-1 including the elements 141-81.

  The other components of the eighth specific example of the design variables related to the spatial light modulator 14 may be the same as the other components of the seventh specific example of the design variables related to the spatial light modulator 14. For this reason, the same components as those of the seventh specific example of the design variables related to the spatial light modulator 14 are denoted by the same reference numerals, and detailed description thereof will be omitted.

  Even when the eighth specific example of the design variables related to the spatial light modulator 14 is used, the effect that can be enjoyed when the seventh specific example of the design variables related to the spatial light modulator 14 is used is preferably enjoyed. It is possible.

  In addition, in the eighth specific example, the design variable indicating the reflection amplitude of the mirror group 140-1 including the mirror element 141 having the defect and the position at a position away from the mirror element 141 having the defect by a predetermined step amount. The design variable indicating the reflection amplitude of the mirror group 140-1 including the mirror element 141 is fixed at r (defect). Therefore, a mirror group indicating the reflection amplitude of the mirror group 140-1 including the mirror element 141 having the defect and including the mirror element 141 located at a position separated by a predetermined step amount from the mirror element 141 having the defect. The design variable indicating the reflection amplitude of 140-1 does not need to be adjusted. In this case, since the number of design variables to be adjusted is reduced, the processing load required for adjusting the design variables is reduced.

  In the seventh and eighth specific examples, the reflection amplitude of the mirror group 140-1 is a reflection amplitude that does not consider the reflection of the exposure light EL2 through the gap 142 in the mirror group 140-1. Good. The reflection amplitude of the mirror group 140-1 may be a reflection amplitude considering only the reflection of the exposure light EL2 via the reflection surface 141a of the mirror element 141 included in the mirror group 140-1. For example, the reflection amplitude of the mirror group 140-1 including the mirror element 141 in which no defect occurs may be set to the above-described ideal or theoretical reflection amplitude (for example, +1 or -1). May be used. For example, the reflection amplitude of the mirror group 140-1 including the mirror element 141 in which the defect has occurred is determined by the ideal or theoretical reflection amplitude or the reflection of the exposure light EL2 through the gap 142 although the defect is considered. The reflection amplitude r (defect) which is not considered may be set.

(2-4) Modification of Cost Function Subsequently, a modification of the cost function CF will be described. The cost function CF ′ according to the modification includes a so-called MEEF (Mask Error Enhancement Factor) term. An example of the MEEF term is shown in Equations 7 and 8. Therefore, the cost function CF ′ according to the modification is represented by, for example, Expression 9.

  Even when the cost function CF 'according to the modification is used, the effects that can be enjoyed when the cost function CF described above is used can be suitably enjoyed. In addition, since the cost function includes the MEEF term, even when the mirror element 141 has a defect, modulation pattern information that can appropriately transfer a desired device pattern to the wafer 161 is generated. Is done.

  When the cost function CF ′ according to the modification is used, even if the mirror element 141 has a defect, the above-described seventh or eighth specific example of the design variable is not used. You may. In other words, when the cost function CF ′ according to the modified example is used, a desired device pattern is preferably transferred to the wafer 161 even if the above-described seventh or eighth specific example of the design variable is not used. Modulation pattern information is generated.

  The configurations and operations of the exposure apparatus 1 and the pattern design apparatus 2 described with reference to FIGS. 1 to 14 are only examples. Therefore, at least a part of the configuration and operation of the exposure apparatus 1 and the pattern design apparatus 2 may be appropriately modified. Hereinafter, an example of a modification of at least a part of the configuration and operation of the exposure apparatus 1 and the pattern design apparatus 2 will be described.

  In the above description, the exposure apparatus 1 is a dry-type exposure apparatus that exposes the wafer 161 without passing through a liquid. However, the exposure apparatus 1 forms a liquid immersion space including the optical path of the exposure light EL3 between the projection optical system 15 and the wafer 161, and exposes the wafer 161 via the projection optical system 15 and the liquid immersion space. An immersion exposure apparatus may be used. Examples of the immersion exposure apparatus include, for example, European Patent Application Publication No. 1,420,298, International Publication No. 2004/055803, and US Pat. No. 6,952,253, which are incorporated herein by reference. It is disclosed in the specification and the like.

  Exposure apparatus 1 may be a twin-stage or multi-stage exposure apparatus having a plurality of wafer stages 16. The exposure apparatus 1 may be a twin-stage or multi-stage exposure apparatus including a plurality of wafer stages 16 and a measurement stage. Examples of twin-stage type exposure apparatuses are described in, for example, US Pat. No. 6,341,007, US Pat. No. 6,208,407 and US Pat. No. 6,262,796, which are incorporated herein by reference. It has been disclosed.

  The projection optical system 15 may be an equal magnification system or an enlargement system. The projection optical system 15 may be a refractive system that includes a refractive optical element but does not include a reflective optical element. The projection optical system 15 may be a reflection system that does not include a refractive optical element but includes a reflection optical element. The projection optical system 15 may be a refractive / reflective system including both a refractive optical element and a reflective optical element. The image projected by the projection optical system 15 may be an inverted image or an erect image.

The light source 11 may emit any light different from ArF excimer laser light having a wavelength of 193 nm as the exposure light EL1. For example, the light source 11 may emit far ultraviolet light (DUV light: Deep Ultra Violet light) such as KrF excimer laser light having a wavelength of 248 nm. Light source 11, _{F 2} laser beam (wavelength 157 nm) vacuum ultraviolet light, such as: a (VUV light Vacuum Ultra Violet light) may be injected. The light source 11 may emit any laser light having a desired wavelength or any other light (for example, a bright line emitted from a mercury lamp, such as a g-line, an h-line, or an i-line). As disclosed in U.S. Pat. No. 7,023,610, the light source 11 emits a single-wavelength laser beam in the infrared or visible region oscillated from a DFB semiconductor laser or a fiber laser, for example, erbium (or erbium). , Erbium and yttrium) may be amplified by a fiber amplifier doped with the same, and a harmonic obtained by wavelength conversion into ultraviolet light using a nonlinear optical crystal may be emitted. The light source 11 is not limited to light having a wavelength of 100 nm or more, and may emit light having a wavelength of less than 100 nm. For example, the light source 11 may emit EUV (Extreme Ultra Violet) light in a soft X-ray range (for example, a wavelength range of 5 to 15 nm). The exposure apparatus 1 may include an electron beam source that emits an electron beam that can be used as the exposure light EL1 in addition to or instead of the light source 11. The exposure apparatus 1 may include, in addition to or instead of the light source 11, a solid-state pulse laser light source that generates a harmonic of laser light output from a YAG laser or a solid-state laser (such as a semiconductor laser). The solid-state pulse laser light source emits a pulse laser beam having a wavelength of 193 nm (various other wavelengths, for example, 213 nm, 266 nm, 355 nm, etc.) and a pulse width of about 1 ns can be used as the exposure light EL1. Injection is possible at a frequency of about 2 MHz. The exposure apparatus 1 may include a beam source that emits an arbitrary energy beam that can be used as the exposure light EL1 in addition to or instead of the light source 11.

  The object onto which the device pattern is transferred is not limited to the wafer 161, and may be any object such as a glass plate, a ceramic substrate, a film member, or a mask blank. The exposure apparatus 1 may be an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on the wafer 161. The exposure apparatus 1 may be an exposure apparatus for manufacturing a liquid crystal display element or a display. The exposure apparatus 1 may be an exposure apparatus for manufacturing at least one of a thin film magnetic head, an imaging device (for example, a CCD), a micromachine, a MEMS, a DNA chip, and a mask or a reticle used for photolithography. .

  The above-described exposure apparatus 1 may be manufactured by combining various subsystems including the above-described various components so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. In order to maintain mechanical accuracy, before and after the combination, adjustment processing for achieving mechanical accuracy may be performed on various mechanical systems. In order to maintain electrical accuracy, before and after the combination, adjustment processing for achieving electrical accuracy may be performed on various electrical systems. In order to maintain optical accuracy, before and after assembly, adjustment processing for achieving optical accuracy may be performed on various optical systems. Combining the various subsystems may include making a mechanical connection between the various subsystems. The step of combining the various subsystems may include the step of wiring connection of an electric circuit between the various subsystems. The step of combining the various subsystems may include the step of connecting the piping of the pneumatic circuit between the various subsystems. Before the step of combining the various subsystems, a step of assembling each of the various subsystems is performed. After the step of combining the various subsystems is completed, the overall adjustment is performed to ensure various accuracy of the exposure apparatus 1 as a whole. The manufacture of the exposure apparatus 1 may be performed in a clean room in which the temperature, cleanliness, and the like are controlled.

  A micro device such as a semiconductor device may be manufactured through the steps shown in FIG. The steps for manufacturing the microdevice are step S201 for designing the function and performance of the microdevice, step S202 for adjusting the design variables based on the function and performance design (see FIG. 5 described above), and the base material of the device. Step S203 of manufacturing the wafer 161; step S204 of exposing the wafer 161 using the exposure light EL3 obtained by the spatial light modulator 14 reflecting the exposure light EL2; and developing the exposed wafer 161; device assembly processing Steps S205 including (processing such as dicing processing, bonding processing, and package processing) and step S206 for performing device inspection may be included.

  At least a part of the components of each embodiment described above can be appropriately combined with at least another part of the components of each embodiment described above. Some of the components of the above embodiments may not be used. In addition, as far as permitted by laws and regulations, the disclosures of all publications and U.S. patents relating to the exposure apparatus and the like cited in the above embodiments are incorporated herein by reference.

  The present invention is not limited to the above-described embodiment, but can be appropriately changed within a scope not inconsistent with the gist or idea of the invention which can be read from the claims and the entire specification, and a control device and a control device with such change The method, the exposure apparatus and the exposure method, the device manufacturing method, the data generation method, and the program are also included in the technical scope of the present invention.

Reference Signs List 1 exposure apparatus 11 light source 12 illumination optical system 14 spatial light modulator 14a light modulation surface 141 mirror element 142 gap 15 projection optical system 16 stage 161 wafer 17 controller 2 pattern design apparatus 21 CPU
22 Memory EL1, EL2, EL3 Exposure light

Claims (22)

A control method for controlling a spatial light modulator that is used in an apparatus that transfers a pattern to an object and includes first and second optical elements whose states can be controlled and changed,
A first light is a light emitted from said first and said gap is incident on the gap of the second optical element are disposed adjacent to each other, and the second light is a light through the first optical element Obtaining the characteristics of the third light , which is light obtained by combining
Setting the state of the first optical element using the obtained characteristic of the third light.   An absolute value of an index value indicating a characteristic of the third light obtained by combining the first light and the second light via the first optical element in the first state; and the first light and the first state. Is different from the absolute value of the index value indicating the characteristic of the third light obtained by combining the second light via the first optical element in the different second state.
  The control method according to claim 1. Wherein the changing the controllable states of the first and second optical elements, the control method according to claim 1 or 2, wherein the first state is a first state and a second, different state. It said characteristic information relating to the third light, the information about the characteristics of the third light when the first and second optical elements are the same the state, the first and second optical elements is different from the state The control method according to claim 3 , further comprising information on a characteristic of the third light in the case. The control method according to any one of claims 1 to 4 , further comprising obtaining a characteristic of the first light that enters the gap between the first and second optical elements and is emitted from the gap. Wherein obtaining the first light characteristic, the control method according to claim 5 comprising calculating the characteristics of the first light on the basis of information about the structure of the spatial light modulator. Wherein obtaining the first light characteristic, the control method according to claim 5 or 6 comprises calculating a characteristic of the first light on the basis of information about the measurement result of the spatial light modulator. Obtaining the characteristics of the first light includes changing the characteristics of the first light based on information about a measurement result of the first light that enters the gap between the first and second optical elements and exits from the gap. The control method according to any one of claims 5 to 7 , including calculating. The control method according to any one of claims 1 to 8 , wherein the information on the characteristic of the third light is an intensity obtained from an amplitude of the third light. The information about the characteristics of the third light control method according to any one of claims 1 to 8 wherein the third is the amplitude of the light. A spatial light modulator that modulates incident light and sets a change controllable state of each of a plurality of optical elements included in the spatial light modulator, and a control method of the spatial light modulator,
Obtaining an optical characteristic value indicating an optical characteristic of a predetermined portion including a first portion where an optical surface of the first optical element is located among the plurality of optical elements;
Setting the state of each of the plurality of optical elements using the optical characteristic values,
The predetermined portion is a second portion which is located between the first optical element and a second optical element adjacent to the first optical element and does not constitute the plurality of optical elements, and a second portion of the first optical element. And a first portion where an optical surface is located.   The absolute value of the optical property value indicating the optical property of the predetermined portion including the first portion where the optical surface of the first optical element in the first state is located, and the absolute value of the second state different from the first state The absolute value of the optical characteristic value indicating the optical characteristic of the predetermined portion including the first portion where the optical surface of the first optical element is located is different.
  The control method according to claim 11. The state of the first optical element can be changed and controlled between a first state and a second state different from the first state,
The optical characteristic value is
The optical characteristics of the predetermined portion when the first optical element is in the first state; and
The control method according to claim 11, wherein the control method indicates at least one of the optical characteristics of the predetermined portion when the first optical element is in the second state. The predetermined portion further includes a third portion where an optical surface of the second optical element is located,
The state of each of the first and second optical elements can be changed and controlled between a first state and a second state different from the first state,
The optical characteristic value is
The optical characteristics of the predetermined portion when the first and second optical elements are in the first state;
The optical characteristics of the predetermined portion when the first optical element is in the first state and the second optical element is in the second state;
The optical characteristics of the predetermined portion when the first optical element is in the second state and the second optical element is in the first state; and
The control method according to claim 11, wherein the control method indicates at least one of the optical characteristics when the first and second optical elements are in the second state. The predetermined portion is a third portion where an optical surface of the second optical element adjacent to the first optical element in the first direction is located, and a second direction intersecting the first optical element and the first direction. A fourth portion where an optical surface of an adjacent third optical element is located, and an optical element of a fourth optical element adjacent to the second optical element in the second direction and adjacent to the third optical element in the first direction. A fifth portion where a surface is located, and a sixth portion which is located between the first optical element and the fourth optical element and does not constitute the plurality of optical elements;
Each state of the first optical element to the fourth optical element can be changed and controlled between a first state and a second state different from the first state,
The optical characteristic value is
The optical characteristics of the predetermined portion when the state of the first optical element and the state of the fourth optical element are the same,
Optical characteristics of the predetermined portion when the state of the first optical element and the state of the fourth optical element are different,
The optical characteristics of the predetermined portion when the state of the second optical element and the state of the third optical element are the same,
The optical characteristics of the predetermined portion when the state of the second optical element is different from the state of the third optical element;
The control method according to claim 11 or 12 , wherein at least one of the following is indicated. The predetermined portion is a portion where optical surfaces of N (where N is an integer of 2 or more) optical elements of the plurality of optical elements are located, and the predetermined portion is located between the N optical elements and And a portion that does not constitute the optical element of
The state of each of the N optical elements can be changed and controlled between a first state and a second state different from the first state,
The control method according to claim 11 , wherein the optical characteristic value indicates the optical characteristic of the predetermined portion when each of the N optical elements is in the first state or the second state. The predetermined portion is a portion where the optical surfaces of M1 (where M1 is an integer of 1 or more) optical elements of the plurality of optical elements are located, and the predetermined portion is located between the M1 optical elements. And a portion that does not constitute the optical element of
M2 optical elements including M1 optical elements (where M2 is an integer greater than M1), wherein the plurality of optical elements are located between a portion where the optical surface is located and the M2 optical elements. based on the plurality of the optical characteristic value indicative of the optical characteristics of the plurality of clusters portion including a portion which does not constitute, according to any one of the predetermined portion of the optical characteristic value of claims 11 to obtain 16 Control method. In an exposure method for exposing a pattern to an object,
Using the control method according to any one of claims 1 to 17 , setting a state of the optical element included in the spatial light modulator;
Irradiating the spatial light modulator with exposure light,
Exposing a pattern on the object with light passing through the spatial light modulator. Using the exposure method according to claim 18 , exposing a predetermined pattern to the object,
Developing the object on which the predetermined pattern is transferred, forming a mask layer having a shape corresponding to the predetermined pattern on the surface of the object;
Processing the surface of the object via the mask layer. In an exposure apparatus that exposes a pattern to an object,
A spatial light modulator including first and second optical elements whose states can be changed and controlled ,
A projection optical system that projects the pattern on the object with light through the spatial light modulator,
A first light is a light emitted from said first and said gap is incident on the gap of the second optical element are disposed adjacent to each other, and the second light is a light through the first optical element A calculating unit that calculates a characteristic of a third light that is light obtained by combining
And a control unit for controlling the spatial light modulator,
An exposure apparatus, wherein the control unit sets a state of the first optical element using the calculated characteristic of the third light. A lithographic system for forming a pattern on a substrate, comprising:
An exposure apparatus comprising: a spatial light modulator including first and second optical elements whose states can be changed and controlled; and a projection optical system configured to project the pattern onto the object with light passing through the spatial light modulator. ,
A data generation device that generates drive data for driving the spatial light modulator of the exposure device,
The data generating device includes a first light that is a light that enters the gap between the first and second optical elements that are arranged adjacent to each other and is emitted from the gap, and a light that passes through the first optical element. A lithography system comprising: a calculation unit that calculates a third characteristic that is light that is a combination of the second light that is the first light element and the calculated third light characteristic. . A data generation method for generating drive data for driving a spatial light modulator including first and second optical elements whose states can be changed and controlled ,
A first light is a light emitted from said first and said gap is incident on the gap of the second optical element are disposed adjacent to each other, and the second light is a light through the first optical element Calculating the characteristic of the third light that is the light obtained by combining
Setting the state of the first optical element using the calculated characteristics of the third light.