WO2009060745A1 - 制御装置、露光方法、及び露光装置 - Google Patents

制御装置、露光方法、及び露光装置 Download PDF

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Publication number
WO2009060745A1
WO2009060745A1 PCT/JP2008/069455 JP2008069455W WO2009060745A1 WO 2009060745 A1 WO2009060745 A1 WO 2009060745A1 JP 2008069455 W JP2008069455 W JP 2008069455W WO 2009060745 A1 WO2009060745 A1 WO 2009060745A1
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WO
WIPO (PCT)
Prior art keywords
light modulator
spatial light
exposure
illumination
exposure method
Prior art date
Application number
PCT/JP2008/069455
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English (en)
French (fr)
Inventor
Soichi Owa
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to KR1020107012422A priority Critical patent/KR101708943B1/ko
Priority to JP2009540019A priority patent/JP5418230B2/ja
Priority to EP08846902A priority patent/EP2219206A4/en
Publication of WO2009060745A1 publication Critical patent/WO2009060745A1/ja

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)

Abstract

　複数種類のパターンが混在するマスクパターンを高いスループットで、かつそれぞれ照明条件を最適化して露光できる露光方法である。パルス発光される照明光（ＩＬ）でウエハ（Ｗ）を露光する露光方法であって、照明光（ＩＬ）によって照明される複数の第１のミラー要素（３）を含む第１の空間光変調器（１３）からの光を複数の第２のミラー要素（５）を含む第２の空間光変調器（２５）へ導光し、第２の空間光変調器（２５）からの光でウエハ（Ｗ）を露光するとともに、第２の空間光変調器（２５）の変調状態を制御する第１工程と、第１の空間光変調器（１３）と第２の空間光変調器（２５）との間の所定面上における照明光（ＩＬ）の強度分布を制御するために、第１の空間光変調器（１３）の変調状態を制御する第２工程と、を有する。
PCT/JP2008/069455 2007-11-06 2008-10-27 制御装置、露光方法、及び露光装置 WO2009060745A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020107012422A KR101708943B1 (ko) 2007-11-06 2008-10-27 제어 장치, 노광 방법 및 노광 장치
JP2009540019A JP5418230B2 (ja) 2007-11-06 2008-10-27 露光方法、及び露光装置
EP08846902A EP2219206A4 (en) 2007-11-06 2008-10-27 CONTROL DEVICE, EXPOSURE METHOD AND EXPOSURE DEVICE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007289090 2007-11-06
JP2007-289090 2007-11-06

Publications (1)

Publication Number Publication Date
WO2009060745A1 true WO2009060745A1 (ja) 2009-05-14

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Country Status (6)

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US (5) US8792081B2 (ja)
EP (1) EP2219206A4 (ja)
JP (2) JP5418230B2 (ja)
KR (1) KR101708943B1 (ja)
TW (1) TW200933307A (ja)
WO (1) WO2009060745A1 (ja)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2317386A3 (en) * 2008-12-23 2011-06-01 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
JP2011119596A (ja) * 2009-12-07 2011-06-16 Nikon Corp 照明光学系、露光装置、およびデバイス製造方法
JP2011522289A (ja) * 2008-05-30 2011-07-28 コーニング インコーポレイテッド マスクレスリソグラフィ用パターニングシステムの集束スポット寸法整定のための照明システム
JP2012094860A (ja) * 2010-10-22 2012-05-17 Asml Netherlands Bv リソグラフィプロセス、デバイス製造方法、リソグラフィ装置、コンピュータプログラム製品およびシミュレーション装置を最適化する方法
WO2012081292A1 (ja) * 2010-12-13 2012-06-21 株式会社ニコン 空間光変調器及びその駆動方法、並びに露光方法及び装置
WO2013108560A1 (ja) 2012-01-18 2013-07-25 株式会社ニコン 空間光変調器の駆動方法、露光用パターンの生成方法、並びに露光方法及び装置
JP2014022582A (ja) * 2012-07-19 2014-02-03 Hitachi Maxell Ltd 半導体装置の製造方法、及び半導体装置
JP2014042073A (ja) * 2007-11-06 2014-03-06 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2014131031A (ja) * 2012-12-14 2014-07-10 Carl Zeiss Smt Gmbh マイクロリソグラフィ投影露光装置の光学系
US9599906B2 (en) 2010-09-27 2017-03-21 Nikon Corporation Method for driving spatial light modulator, method for forming pattern for exposure, exposure method, and exposure apparatus
JP2017102256A (ja) * 2015-12-01 2017-06-08 株式会社ニコン 制御装置及び制御方法、露光装置及び露光方法、デバイス製造方法、データ生成方法、並びに、プログラム
JP2019159270A (ja) * 2018-03-16 2019-09-19 キヤノン株式会社 リソグラフィ装置、照明装置及び物品の製造方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
WO2010024106A1 (ja) * 2008-08-28 2010-03-04 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
KR101057191B1 (ko) * 2008-12-30 2011-08-16 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성방법
JP5330205B2 (ja) * 2009-11-26 2013-10-30 株式会社東芝 露光方法
KR102046286B1 (ko) * 2010-02-03 2019-11-18 가부시키가이샤 니콘 조명 광학 장치, 조명 방법, 및 노광 방법 및 장치
NL2008009A (en) * 2011-02-02 2012-08-06 Asml Netherlands Bv Illumination system, lithographic apparatus and method.
JP5807761B2 (ja) * 2011-06-06 2015-11-10 株式会社ニコン 照明方法、照明光学装置、及び露光装置
TWI652508B (zh) 2011-06-13 2019-03-01 尼康股份有限公司 照明方法
JP5554753B2 (ja) * 2011-06-29 2014-07-23 株式会社日立ハイテクノロジーズ 露光方法及びその装置
US9703182B2 (en) * 2011-10-27 2017-07-11 Dai Nippon Printing Co., Ltd. Projection apparatus
US9732934B2 (en) 2011-10-28 2017-08-15 Nikon Corporation Illumination device for optimizing polarization in an illumination pupil
US8802333B2 (en) 2012-03-15 2014-08-12 Taiwan Semiconductor Manufacturing Company, Ltd. Reflective lithography masks and systems and methods
EP2876498B1 (en) * 2013-11-22 2017-05-24 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
US20150234295A1 (en) 2014-02-20 2015-08-20 Nikon Corporation Dynamic patterning method that removes phase conflicts and improves pattern fidelity and cdu on a two phase-pixelated digital scanner
JP6558528B2 (ja) * 2015-03-30 2019-08-14 株式会社ニコン 空間光変調器及びその使用方法、変調方法、露光方法及び装置、並びにデバイス製造方法
DE102015212658A1 (de) * 2015-07-07 2017-01-12 Carl Zeiss Smt Gmbh Lithographieanlage und verfahren zum betreiben einer lithographieanlage
US10840103B2 (en) 2015-11-23 2020-11-17 Nikon Corporation Forced grid method for correcting mask patterns for a pattern transfer apparatus
DE102015224522B4 (de) * 2015-12-08 2018-06-21 Carl Zeiss Smt Gmbh Beleuchtungssystem einer mikrolithographischen Projektionsanlage und Verfahren zum Betreiben eines solchen Systems
US11537051B2 (en) 2017-03-16 2022-12-27 Nikon Corporation Control apparatus and control method, exposure apparatus and exposure method, device manufacturing method, data generating method and program
CN109116685B (zh) * 2018-09-14 2020-11-20 重庆惠科金渝光电科技有限公司 一种曝光方法及其曝光装置
JP7240162B2 (ja) * 2018-12-14 2023-03-15 キヤノン株式会社 露光装置、露光方法及び物品の製造方法
WO2021141128A1 (ja) 2020-01-10 2021-07-15 株式会社ニコン 光学装置、露光装置、フラットパネルディスプレイの製造方法、及びデバイス製造方法
WO2021186697A1 (ja) * 2020-03-19 2021-09-23 ギガフォトン株式会社 露光システム及び電子デバイスの製造方法
TWI836287B (zh) * 2021-11-04 2024-03-21 邱俊榮 曝光裝置與曝光方法

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5312513A (en) 1992-04-03 1994-05-17 Texas Instruments Incorporated Methods of forming multiple phase light modulators
EP0779530A1 (en) 1996-05-06 1997-06-18 Yalestown Corporation N.V. Adaptive optical module
JPH10175328A (ja) * 1996-12-03 1998-06-30 Eastman Kodak Co 画像印刷装置及び画像印刷システムにおける光不均一性補正方法
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2002353105A (ja) 2001-05-24 2002-12-06 Nikon Corp 照明光学装置，該照明光学装置を備えた露光装置，およびマイクロデバイスの製造方法
WO2004019128A2 (en) 2002-08-23 2004-03-04 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
JP2004078136A (ja) 2001-11-14 2004-03-11 Ricoh Co Ltd 光偏向方法並びに光偏向装置及びその光偏向装置の製造方法並びにその光偏向装置を具備する光情報処理装置及び画像形成装置及び画像投影表示装置及び光伝送装置
JP2004520618A (ja) 2001-02-05 2004-07-08 マイクロニック・レーザー・システムズ・エイビー 可動マイクロ素子におけるヒステリシス又は履歴効果を減少させるための方法と装置
US20050095749A1 (en) 2002-04-29 2005-05-05 Mathias Krellmann Device for protecting a chip and method for operating a chip
US6891655B2 (en) 2003-01-02 2005-05-10 Micronic Laser Systems Ab High energy, low energy density, radiation-resistant optics used with micro-electromechanical devices
US6900915B2 (en) 2001-11-14 2005-05-31 Ricoh Company, Ltd. Light deflecting method and apparatus efficiently using a floating mirror
JP2005524112A (ja) 2002-04-29 2005-08-11 フラウンホーファー−ゲゼルシャフト・ツール・フェルデルング・デル・アンゲヴァンテン・フォルシュング・アインゲトラーゲネル・フェライン チップの保護装置およびチップの作動方法
JP2006013518A (ja) 2004-06-28 2006-01-12 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
JP2006113437A (ja) 2004-10-18 2006-04-27 Ngk Insulators Ltd マイクロミラーデバイス
US7095546B2 (en) 2003-04-24 2006-08-22 Metconnex Canada Inc. Micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays
JP2006524349A (ja) 2003-04-24 2006-10-26 メトコネックス カナダ インコーポレイティッド 高フィルファクターアレイのための、連接式サスペンション構造を有する微小電子機械システム２次元ミラー
JP2007289090A (ja) 2006-04-26 2007-11-08 Sunnyhealth Co Ltd 脂肪代替物、畜肉又は魚肉加工食品、その食感改良方法、並びに製造方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0777191B2 (ja) 1993-04-06 1995-08-16 日本電気株式会社 露光光投射装置
JPH08313842A (ja) 1995-05-15 1996-11-29 Nikon Corp 照明光学系および該光学系を備えた露光装置
US5754305A (en) 1996-12-03 1998-05-19 Eastman Kodak Company Method and apparatus for correcting light non-uniformity in an LCD photographic printer
US5870205A (en) 1996-12-03 1999-02-09 Eastman Kodak Company Method and apparatus for correcting light non-uniformity in an LCD photographic printer
JPH113849A (ja) 1997-06-12 1999-01-06 Sony Corp 可変変形照明フィルタ及び半導体露光装置
KR100576746B1 (ko) 2001-06-01 2006-05-03 에이에스엠엘 네델란즈 비.브이. 리소그래피장치, 디바이스제조방법, 그 디바이스,제어시스템, 컴퓨터프로그램, 및 컴퓨터프로그램물
US7015491B2 (en) 2001-06-01 2006-03-21 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby, control system
TWI281099B (en) 2002-12-02 2007-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US6870554B2 (en) * 2003-01-07 2005-03-22 Anvik Corporation Maskless lithography with multiplexed spatial light modulators
EP1668421A2 (en) 2003-09-12 2006-06-14 Carl Zeiss SMT AG Illumination system for a microlithography projection exposure installation
US7227613B2 (en) * 2004-07-26 2007-06-05 Asml Holding N.V. Lithographic apparatus having double telecentric illumination
US20060138349A1 (en) 2004-12-27 2006-06-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006085626A1 (ja) * 2005-02-14 2006-08-17 Nikon Corporation 露光方法及び装置、並びにデバイス製造方法
KR101134174B1 (ko) 2005-03-15 2012-04-09 칼 짜이스 에스엠티 게엠베하 투사 노광 방법 및 이를 위한 투사 노광 시스템
US7317506B2 (en) 2005-03-29 2008-01-08 Asml Netherlands B.V. Variable illumination source
US7548302B2 (en) 2005-03-29 2009-06-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7400382B2 (en) * 2005-04-28 2008-07-15 Asml Holding N.V. Light patterning device using tilting mirrors in a superpixel form
US8052289B2 (en) * 2006-06-07 2011-11-08 Asml Netherlands B.V. Mirror array for lithography
CA2605042C (en) * 2006-10-02 2015-12-29 3Rd Millennium Solutions, Ltd. Apparatus and methods for determining a predicted vehicle braking operation
US7804603B2 (en) 2006-10-03 2010-09-28 Asml Netherlands B.V. Measurement apparatus and method
WO2008061681A2 (de) 2006-11-21 2008-05-29 Carl Zeiss Smt Ag Beleuchtungsoptik für die projektions-mikrolithografie sowie mess- und überwachungsverfahren für eine derartige beleuchtungsoptik
US8937706B2 (en) 2007-03-30 2015-01-20 Asml Netherlands B.V. Lithographic apparatus and method
US20080259304A1 (en) 2007-04-20 2008-10-23 Asml Netherlands B.V. Lithographic apparatus and method
JP5345132B2 (ja) 2007-04-25 2013-11-20 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ露光装置においてマスクを照明するための照明系
KR101708943B1 (ko) * 2007-11-06 2017-02-21 가부시키가이샤 니콘 제어 장치, 노광 방법 및 노광 장치
US9291814B2 (en) * 2010-09-22 2016-03-22 Nikon Corporation Spatial light modulator, exposure apparatus, and method for manufacturing device

Patent Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5312513A (en) 1992-04-03 1994-05-17 Texas Instruments Incorporated Methods of forming multiple phase light modulators
JPH06281869A (ja) 1992-04-03 1994-10-07 Texas Instr Inc <Ti> 多相光変調の方法および装置
EP0779530A1 (en) 1996-05-06 1997-06-18 Yalestown Corporation N.V. Adaptive optical module
JPH10503300A (ja) 1996-05-06 1998-03-24 イェイルズタウン コーポレイション エヌ ヴェー 適応光学モジュール
JPH10175328A (ja) * 1996-12-03 1998-06-30 Eastman Kodak Co 画像印刷装置及び画像印刷システムにおける光不均一性補正方法
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
US6885493B2 (en) 2001-02-05 2005-04-26 Micronic Lasersystems Ab Method and a device for reducing hysteresis or imprinting in a movable micro-element
JP2004520618A (ja) 2001-02-05 2004-07-08 マイクロニック・レーザー・システムズ・エイビー 可動マイクロ素子におけるヒステリシス又は履歴効果を減少させるための方法と装置
JP2002353105A (ja) 2001-05-24 2002-12-06 Nikon Corp 照明光学装置，該照明光学装置を備えた露光装置，およびマイクロデバイスの製造方法
US6900915B2 (en) 2001-11-14 2005-05-31 Ricoh Company, Ltd. Light deflecting method and apparatus efficiently using a floating mirror
JP2004078136A (ja) 2001-11-14 2004-03-11 Ricoh Co Ltd 光偏向方法並びに光偏向装置及びその光偏向装置の製造方法並びにその光偏向装置を具備する光情報処理装置及び画像形成装置及び画像投影表示装置及び光伝送装置
US20050095749A1 (en) 2002-04-29 2005-05-05 Mathias Krellmann Device for protecting a chip and method for operating a chip
JP2005524112A (ja) 2002-04-29 2005-08-11 フラウンホーファー−ゲゼルシャフト・ツール・フェルデルング・デル・アンゲヴァンテン・フォルシュング・アインゲトラーゲネル・フェライン チップの保護装置およびチップの作動方法
WO2004019128A2 (en) 2002-08-23 2004-03-04 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
US6891655B2 (en) 2003-01-02 2005-05-10 Micronic Laser Systems Ab High energy, low energy density, radiation-resistant optics used with micro-electromechanical devices
JP2006513442A (ja) 2003-01-02 2006-04-20 マイクロニック レーザー システムズ アクチボラゲット 微小電気機械素子と共に使用される高エネルギー、低エネルギー密度の放射抵抗光学素子
US7095546B2 (en) 2003-04-24 2006-08-22 Metconnex Canada Inc. Micro-electro-mechanical-system two dimensional mirror with articulated suspension structures for high fill factor arrays
JP2006524349A (ja) 2003-04-24 2006-10-26 メトコネックス カナダ インコーポレイティッド 高フィルファクターアレイのための、連接式サスペンション構造を有する微小電子機械システム２次元ミラー
JP2006013518A (ja) 2004-06-28 2006-01-12 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
JP2006113437A (ja) 2004-10-18 2006-04-27 Ngk Insulators Ltd マイクロミラーデバイス
JP2007289090A (ja) 2006-04-26 2007-11-08 Sunnyhealth Co Ltd 脂肪代替物、畜肉又は魚肉加工食品、その食感改良方法、並びに製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2219206A4

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014042073A (ja) * 2007-11-06 2014-03-06 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2011522289A (ja) * 2008-05-30 2011-07-28 コーニング インコーポレイテッド マスクレスリソグラフィ用パターニングシステムの集束スポット寸法整定のための照明システム
EP2317386A3 (en) * 2008-12-23 2011-06-01 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
JP2011119596A (ja) * 2009-12-07 2011-06-16 Nikon Corp 照明光学系、露光装置、およびデバイス製造方法
KR20190035953A (ko) 2010-09-27 2019-04-03 가부시키가이샤 니콘 공간 광변조기의 구동 방법, 노광용 패턴의 생성 방법, 노광 방법, 및 노광 장치
KR20180135106A (ko) 2010-09-27 2018-12-19 가부시키가이샤 니콘 공간 광변조기의 구동 방법, 노광용 패턴의 생성 방법, 노광 방법, 및 노광 장치
US9599906B2 (en) 2010-09-27 2017-03-21 Nikon Corporation Method for driving spatial light modulator, method for forming pattern for exposure, exposure method, and exposure apparatus
JP2012094860A (ja) * 2010-10-22 2012-05-17 Asml Netherlands Bv リソグラフィプロセス、デバイス製造方法、リソグラフィ装置、コンピュータプログラム製品およびシミュレーション装置を最適化する方法
US9170502B2 (en) 2010-10-22 2015-10-27 Asml Netherlands B.V. Method of optimizing a lithographic process, device manufacturing method, lithographic apparatus, computer program product and simulation apparatus
JP5880443B2 (ja) * 2010-12-13 2016-03-09 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
WO2012081292A1 (ja) * 2010-12-13 2012-06-21 株式会社ニコン 空間光変調器及びその駆動方法、並びに露光方法及び装置
KR20180133945A (ko) 2010-12-13 2018-12-17 가부시키가이샤 니콘 공간 광변조기, 노광 장치, 디바이스 제조 방법
WO2013108560A1 (ja) 2012-01-18 2013-07-25 株式会社ニコン 空間光変調器の駆動方法、露光用パターンの生成方法、並びに露光方法及び装置
KR20140114418A (ko) 2012-01-18 2014-09-26 가부시키가이샤 니콘 공간 광변조기의 구동 방법, 노광용 패턴의 생성 방법, 노광 방법 및 장치
US11119411B2 (en) 2012-01-18 2021-09-14 Nikon Corporation Drive method for spatial light modulator, method for generating pattern for exposure, and exposure method and apparatus
JP2014022582A (ja) * 2012-07-19 2014-02-03 Hitachi Maxell Ltd 半導体装置の製造方法、及び半導体装置
US8917433B2 (en) 2012-12-14 2014-12-23 Carl Zeiss Smt Gmbh Optical system of a microlithographic projection exposure apparatus
JP2014131031A (ja) * 2012-12-14 2014-07-10 Carl Zeiss Smt Gmbh マイクロリソグラフィ投影露光装置の光学系
JP2017102256A (ja) * 2015-12-01 2017-06-08 株式会社ニコン 制御装置及び制御方法、露光装置及び露光方法、デバイス製造方法、データ生成方法、並びに、プログラム
JP2019159270A (ja) * 2018-03-16 2019-09-19 キヤノン株式会社 リソグラフィ装置、照明装置及び物品の製造方法

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US9268235B2 (en) 2016-02-23
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