SG145691A1 - Angled pinned photodiode for high quantum efficiency and method of formation - Google Patents

Angled pinned photodiode for high quantum efficiency and method of formation

Info

Publication number
SG145691A1
SG145691A1 SG200805601-2A SG2008056012A SG145691A1 SG 145691 A1 SG145691 A1 SG 145691A1 SG 2008056012 A SG2008056012 A SG 2008056012A SG 145691 A1 SG145691 A1 SG 145691A1
Authority
SG
Singapore
Prior art keywords
angled
pinned photodiode
formation
quantum efficiency
high quantum
Prior art date
Application number
SG200805601-2A
Other languages
English (en)
Inventor
Howard E Rhodes
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of SG145691A1 publication Critical patent/SG145691A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
SG200805601-2A 2003-07-30 2004-07-15 Angled pinned photodiode for high quantum efficiency and method of formation SG145691A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/629,679 US6900484B2 (en) 2003-07-30 2003-07-30 Angled pinned photodiode for high quantum efficiency

Publications (1)

Publication Number Publication Date
SG145691A1 true SG145691A1 (en) 2008-09-29

Family

ID=34103663

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200805601-2A SG145691A1 (en) 2003-07-30 2004-07-15 Angled pinned photodiode for high quantum efficiency and method of formation

Country Status (7)

Country Link
US (2) US6900484B2 (ko)
EP (1) EP1649517A1 (ko)
JP (1) JP2007500444A (ko)
KR (2) KR20080011468A (ko)
CN (1) CN1860610A (ko)
SG (1) SG145691A1 (ko)
WO (1) WO2005013370A1 (ko)

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US7755684B2 (en) * 2006-08-29 2010-07-13 Micron Technology, Inc. Row driver circuitry for imaging devices and related method of operation
JP4859045B2 (ja) * 2006-09-06 2012-01-18 シャープ株式会社 固体撮像素子および電子情報機器
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US7528427B2 (en) 2007-01-30 2009-05-05 International Business Machines Corporation Pixel sensor cell having asymmetric transfer gate with reduced pinning layer barrier potential
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KR20090011702A (ko) * 2007-07-27 2009-02-02 삼성모바일디스플레이주식회사 유기전계발광 표시장치
US20090179294A1 (en) * 2007-12-27 2009-07-16 Jeong-Yel Jang Image sensor and method for manufacturing the same
JP2010161236A (ja) 2009-01-08 2010-07-22 Canon Inc 光電変換装置の製造方法
JP5215963B2 (ja) * 2009-04-10 2013-06-19 シャープ株式会社 固体撮像素子およびその駆動方法、固体撮像素子の製造方法、電子情報機器
JP2010287610A (ja) * 2009-06-09 2010-12-24 Panasonic Corp 固体撮像装置およびその製造方法
JP5651976B2 (ja) * 2010-03-26 2015-01-14 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
US8293629B2 (en) * 2010-04-06 2012-10-23 Omnivision Technologies, Inc. High full-well capacity pixel with graded photodetector implant
JP2012109540A (ja) * 2010-10-26 2012-06-07 Canon Inc 固体撮像装置の製造方法
JP2012204583A (ja) * 2011-03-25 2012-10-22 National Institute Of Advanced Industrial & Technology トンネルトランジスタの製造方法
JP2013008782A (ja) * 2011-06-23 2013-01-10 Toshiba Corp 固体撮像装置の製造方法
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US9748290B2 (en) * 2014-02-03 2017-08-29 Taiwan Semiconductor Manufacturing Co., Ltd. Mechanisms for forming image sensor with lateral doping gradient
CN104157661B (zh) * 2014-08-15 2017-11-10 北京思比科微电子技术股份有限公司 一种cmos图像传感器的制造方法
TWI731026B (zh) * 2016-01-15 2021-06-21 新加坡商海特根微光學公司 半導體器件
US9923024B1 (en) * 2017-05-26 2018-03-20 Omnivision Technologies, Inc. CMOS image sensor with reduced cross talk
US11329085B2 (en) * 2019-08-22 2022-05-10 Omivision Technologies, Inc. Pixel array with isolated pixels
CN112490259A (zh) * 2020-12-28 2021-03-12 上海集成电路装备材料产业创新中心有限公司 一种像素单元结构及制作方法
CN113363274B (zh) * 2021-05-28 2024-01-23 上海华力微电子有限公司 图像传感器及其制造方法

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Also Published As

Publication number Publication date
EP1649517A1 (en) 2006-04-26
CN1860610A (zh) 2006-11-08
US20050023553A1 (en) 2005-02-03
JP2007500444A (ja) 2007-01-11
KR20080011468A (ko) 2008-02-04
KR20060036474A (ko) 2006-04-28
US20050098806A1 (en) 2005-05-12
US6900484B2 (en) 2005-05-31
WO2005013370A1 (en) 2005-02-10
KR100846005B1 (ko) 2008-07-11

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