SG140530A1 - Alkaline etching solution for semiconductor wafer and alkaline etching method - Google Patents
Alkaline etching solution for semiconductor wafer and alkaline etching methodInfo
- Publication number
- SG140530A1 SG140530A1 SG200705460-4A SG2007054604A SG140530A1 SG 140530 A1 SG140530 A1 SG 140530A1 SG 2007054604 A SG2007054604 A SG 2007054604A SG 140530 A1 SG140530 A1 SG 140530A1
- Authority
- SG
- Singapore
- Prior art keywords
- alkaline etching
- alkaline
- semiconductor wafer
- etching solution
- solution
- Prior art date
Links
- 238000005530 etching Methods 0.000 title abstract 7
- 238000000034 method Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000000243 solution Substances 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000007864 aqueous solution Substances 0.000 abstract 2
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 abstract 2
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 abstract 2
- 239000003518 caustics Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 230000003746 surface roughness Effects 0.000 abstract 2
- 229910002651 NO3 Inorganic materials 0.000 abstract 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B11/00—Oxides or oxyacids of halogens; Salts thereof
- C01B11/20—Oxygen compounds of bromine
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02019—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006243350A JP5017709B2 (ja) | 2006-09-07 | 2006-09-07 | シリコンウェーハのエッチング方法および半導体シリコンウェーハの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG140530A1 true SG140530A1 (en) | 2008-03-28 |
Family
ID=38819860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200705460-4A SG140530A1 (en) | 2006-09-07 | 2007-07-25 | Alkaline etching solution for semiconductor wafer and alkaline etching method |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7780868B2 (ja) |
| EP (1) | EP1898454B1 (ja) |
| JP (1) | JP5017709B2 (ja) |
| KR (1) | KR100983064B1 (ja) |
| CN (1) | CN101158052B (ja) |
| DE (1) | DE602007004154D1 (ja) |
| SG (1) | SG140530A1 (ja) |
| TW (1) | TWI354695B (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110020966A1 (en) * | 2009-07-23 | 2011-01-27 | Canon Kabushiki Kaisha | Method for processing silicon substrate and method for producing substrate for liquid ejecting head |
| JP5216749B2 (ja) * | 2009-11-02 | 2013-06-19 | ジルトロニック アクチエンゲゼルシャフト | シリコンウエーハの加工方法 |
| CN102154710B (zh) * | 2010-12-09 | 2013-09-11 | 扬州瀚源新材料科技有限公司 | 单晶硅片植绒工艺液及其制备方法 |
| CN103603054A (zh) * | 2013-10-15 | 2014-02-26 | 电子科技大学 | 一种制备钽酸锂晶片的方法 |
| CN103773374B (zh) * | 2014-01-26 | 2015-03-11 | 内蒙古日月太阳能科技有限责任公司 | 碱性腐蚀液及腐蚀多晶硅片的方法 |
| CN111211049B (zh) * | 2018-11-21 | 2022-10-21 | 浙江海晫新能源科技有限公司 | 一种硅片碱腐蚀工艺及其应用 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1923618A (en) * | 1932-07-30 | 1933-08-22 | Philip H Groggins | Preparation of amino derivatives of the anthraquinone series |
| GB1278499A (en) | 1968-10-17 | 1972-06-21 | Texas Instruments Inc | Improved process for polishing oxidizable surfaces |
| FR2374396A1 (fr) * | 1976-12-17 | 1978-07-13 | Ibm | Composition de decapage du silicium |
| KR0154252B1 (ko) | 1994-03-31 | 1998-12-01 | 아베 아끼라 | 에칭제 및 전자소자와 그의 제조방법 |
| US6168725B1 (en) * | 1997-12-22 | 2001-01-02 | Visteon Global Technologies, Inc. | Etching of Al-Cu layers to form electronic circuits using base solutions including nitrites, borates or bromates |
| JP4306827B2 (ja) * | 1998-04-14 | 2009-08-05 | エルジー ディスプレイ カンパニー リミテッド | エッチング剤 |
| JP4094110B2 (ja) * | 1998-04-14 | 2008-06-04 | エルジー．フィリップス エルシーデー カンパニー，リミテッド | エッチング剤 |
| US6232228B1 (en) | 1998-06-25 | 2001-05-15 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made using the method |
| KR100271769B1 (ko) | 1998-06-25 | 2001-02-01 | 윤종용 | 반도체소자의 제조방법, 이를 위한 반도체소자 제조용 식각액조성물 및 반도체소자 |
| JP3765970B2 (ja) * | 2000-07-12 | 2006-04-12 | ソニーケミカル株式会社 | エッチング液及びフレキシブル配線板の製造方法 |
| JP2002322578A (ja) * | 2001-04-24 | 2002-11-08 | Noritake Co Ltd | アルミニウム薄膜のエッチング液およびアルミニウム薄膜パターン形成方法 |
| JP2003229392A (ja) | 2001-11-28 | 2003-08-15 | Shin Etsu Handotai Co Ltd | シリコンウエーハの製造方法及びシリコンウエーハ並びにｓｏｉウエーハ |
| US6740253B2 (en) * | 2002-01-23 | 2004-05-25 | Council Of Scientific And Industrial Research | Preparation of non-hazardous brominating reagents |
| US20030139047A1 (en) * | 2002-01-24 | 2003-07-24 | Thomas Terence M. | Metal polishing slurry having a static etch inhibitor and method of formulation |
| JP4010819B2 (ja) * | 2002-02-04 | 2007-11-21 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| DE10241300A1 (de) * | 2002-09-04 | 2004-03-18 | Merck Patent Gmbh | Ätzpasten für Siliziumoberflächen und -schichten |
| WO2004027840A2 (en) * | 2002-09-18 | 2004-04-01 | Memc Electronic Materials, Inc. | Process for etching silicon wafers |
| AU2003286616A1 (en) * | 2002-10-25 | 2004-05-25 | Intersurface Dynamics, Inc. | Method for using additives in the caustic etching of silicon for obtaining improved surface characteristics |
| JP2005175223A (ja) * | 2003-12-11 | 2005-06-30 | Fujikura Ltd | シリコンウエハのエッチング方法 |
| JP4700333B2 (ja) | 2003-12-22 | 2011-06-15 | シルトロニック・ジャパン株式会社 | シリコンウエーハ用の高純度アルカリエッチング液およびシリコンウエーハアルカリエッチング方法 |
| US20060118760A1 (en) | 2004-12-03 | 2006-06-08 | Yang Andy C | Slurry composition and methods for chemical mechanical polishing |
| JP4792802B2 (ja) * | 2005-04-26 | 2011-10-12 | 住友電気工業株式会社 | Ｉｉｉ族窒化物結晶の表面処理方法 |
| ATE469199T1 (de) * | 2006-10-31 | 2010-06-15 | Soitec Silicon On Insulator | Verfahren zur charakterisierung von defekten auf silizium-oberflächen, ätzlösung für silizium- oberflächen und verfahren zur behandlung von silizium-oberflächen mit der ätzlösung |
| EP1923618A3 (en) | 2006-11-15 | 2010-05-26 | Specmat Limited | Apparatus for connecting together two objects and chair incorporating the same |
-
2006
- 2006-09-07 JP JP2006243350A patent/JP5017709B2/ja active Active
-
2007
- 2007-07-25 SG SG200705460-4A patent/SG140530A1/en unknown
- 2007-08-17 CN CN2007101416546A patent/CN101158052B/zh active Active
- 2007-08-22 TW TW096131025A patent/TWI354695B/zh active
- 2007-08-22 DE DE602007004154T patent/DE602007004154D1/de active Active
- 2007-08-22 EP EP07016454A patent/EP1898454B1/en active Active
- 2007-08-27 KR KR1020070086054A patent/KR100983064B1/ko active IP Right Grant
- 2007-09-05 US US11/899,182 patent/US7780868B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008066538A (ja) | 2008-03-21 |
| CN101158052B (zh) | 2010-09-29 |
| EP1898454B1 (en) | 2010-01-06 |
| TWI354695B (en) | 2011-12-21 |
| JP5017709B2 (ja) | 2012-09-05 |
| DE602007004154D1 (de) | 2010-02-25 |
| KR100983064B1 (ko) | 2010-09-20 |
| US20080064222A1 (en) | 2008-03-13 |
| US7780868B2 (en) | 2010-08-24 |
| CN101158052A (zh) | 2008-04-09 |
| EP1898454A3 (en) | 2008-06-04 |
| EP1898454A2 (en) | 2008-03-12 |
| KR20080023119A (ko) | 2008-03-12 |
| TW200813194A (en) | 2008-03-16 |
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