SG130168A1 - Silicon wafer surface defect evaluation method - Google Patents
Silicon wafer surface defect evaluation methodInfo
- Publication number
- SG130168A1 SG130168A1 SG200605807-7A SG2006058077A SG130168A1 SG 130168 A1 SG130168 A1 SG 130168A1 SG 2006058077 A SG2006058077 A SG 2006058077A SG 130168 A1 SG130168 A1 SG 130168A1
- Authority
- SG
- Singapore
- Prior art keywords
- silicon wafer
- wafer surface
- silicon
- evaluation method
- defect evaluation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005245105 | 2005-08-26 | ||
JP2006169888A JP4743010B2 (ja) | 2005-08-26 | 2006-06-20 | シリコンウェーハの表面欠陥評価方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG130168A1 true SG130168A1 (en) | 2007-03-20 |
Family
ID=37499678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200605807-7A SG130168A1 (en) | 2005-08-26 | 2006-08-24 | Silicon wafer surface defect evaluation method |
Country Status (7)
Country | Link |
---|---|
US (1) | US7632349B2 (ko) |
EP (1) | EP1758158B1 (ko) |
JP (1) | JP4743010B2 (ko) |
KR (1) | KR100768378B1 (ko) |
CN (1) | CN1932496B (ko) |
MY (1) | MY137864A (ko) |
SG (1) | SG130168A1 (ko) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
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JPWO2008081567A1 (ja) * | 2007-01-05 | 2010-04-30 | 信越半導体株式会社 | シリコンウエーハの評価方法 |
CN101459095B (zh) * | 2007-12-13 | 2010-08-11 | 中芯国际集成电路制造(上海)有限公司 | 晶圆在线检测方法及在线检测装置 |
FR2941326A1 (fr) * | 2009-01-16 | 2010-07-23 | Commissariat Energie Atomique | Procede de revelation de dislocations emergentes dans un element cristallin a base de germanium |
JP4758492B2 (ja) * | 2009-03-24 | 2011-08-31 | トヨタ自動車株式会社 | 単結晶の欠陥密度測定方法 |
KR101214806B1 (ko) | 2010-05-11 | 2012-12-24 | 가부시키가이샤 사무코 | 웨이퍼 결함 검사 장치 및 웨이퍼 결함 검사 방법 |
JP5439305B2 (ja) * | 2010-07-14 | 2014-03-12 | 信越半導体株式会社 | シリコン基板の製造方法及びシリコン基板 |
JP5350345B2 (ja) * | 2010-09-22 | 2013-11-27 | 株式会社神戸製鋼所 | 薄膜半導体の結晶性評価装置および方法 |
KR101246493B1 (ko) * | 2011-07-08 | 2013-04-01 | 주식회사 엘지실트론 | 웨이퍼의 결함 평가방법 |
US9349660B2 (en) * | 2011-12-01 | 2016-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit manufacturing tool condition monitoring system and method |
CN102768134B (zh) * | 2012-07-20 | 2015-02-11 | 浙江大学 | 一种显示和检测直拉硅片中空洞型缺陷的方法 |
CN104297667B (zh) * | 2014-09-19 | 2017-06-06 | 上海华虹宏力半导体制造有限公司 | 检测晶格位错的方法 |
JP6100226B2 (ja) * | 2014-11-26 | 2017-03-22 | 信越半導体株式会社 | シリコン単結晶ウェーハの熱処理方法 |
JP6565624B2 (ja) * | 2015-11-16 | 2019-08-28 | 株式会社Sumco | シリコンウェーハの品質評価方法およびシリコンウェーハの製造方法 |
DE102015224983B4 (de) * | 2015-12-11 | 2019-01-24 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung |
JP2017183471A (ja) * | 2016-03-30 | 2017-10-05 | 信越半導体株式会社 | 点欠陥領域の評価方法 |
KR101851604B1 (ko) * | 2016-06-30 | 2018-04-24 | 에스케이실트론 주식회사 | 웨이퍼 및 그 제조방법 |
CN109427602B (zh) * | 2017-08-28 | 2021-04-13 | 姜延华 | 用于晶圆地域性零件平均测试的线性缺陷侦测方法 |
US11387151B2 (en) * | 2017-12-22 | 2022-07-12 | Sumco Corporation | Method of measuring concentration of Fe in p-type silicon wafer and SPV measurement apparatus |
CN108896370A (zh) * | 2018-07-18 | 2018-11-27 | 中国航空工业集团公司沈阳飞机设计研究所 | 一种钛合金成形修复制件的试样选取方法 |
CN109273377B (zh) * | 2018-09-03 | 2020-09-15 | 宁晋晶兴电子材料有限公司 | 单晶硅同心圆及黑角的检测前预处理方法 |
CN111624460B (zh) * | 2020-06-28 | 2022-10-21 | 西安奕斯伟材料科技有限公司 | 一种单晶硅缺陷分布区域的检测方法 |
CN113271063A (zh) * | 2021-04-17 | 2021-08-17 | 山西潞安太阳能科技有限责任公司 | 一种三维尺度检测晶硅电池缺陷的方法 |
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US4181538A (en) * | 1978-09-26 | 1980-01-01 | The United States Of America As Represented By The United States Department Of Energy | Method for making defect-free zone by laser-annealing of doped silicon |
US4598249A (en) * | 1984-02-29 | 1986-07-01 | Rca Corporation | Method using surface photovoltage (SPV) measurements for revealing heavy metal contamination of semiconductor material |
US5369495A (en) * | 1992-09-04 | 1994-11-29 | University Of South Florida | Semiconductor contaminant sensing system and method |
US5272119A (en) * | 1992-09-23 | 1993-12-21 | Memc Electronic Materials, Spa | Process for contamination removal and minority carrier lifetime improvement in silicon |
JPH0864650A (ja) * | 1994-08-24 | 1996-03-08 | Komatsu Electron Metals Co Ltd | Fe−B濃度測定によるシリコンウェーハの評価方法 |
JPH0862122A (ja) * | 1994-08-24 | 1996-03-08 | Komatsu Electron Metals Co Ltd | シリコンウェーハの酸素析出欠陥密度評価方法 |
JPH08191091A (ja) * | 1995-01-10 | 1996-07-23 | Komatsu Electron Metals Co Ltd | シリコンウェーハの酸化膜耐圧強度の簡便評価法 |
US5581194A (en) * | 1995-06-07 | 1996-12-03 | Advanced Micro Devices, Inc. | Method and apparatus for passive optical characterization of semiconductor substrates subjected to high energy (MEV) ion implantation using high-injection surface photovoltage |
US5773989A (en) * | 1995-07-14 | 1998-06-30 | University Of South Florida | Measurement of the mobile ion concentration in the oxide layer of a semiconductor wafer |
US5804981A (en) * | 1996-05-07 | 1998-09-08 | Advanced Micro Devices, Inc. | Method of detecting heavy metal impurities introduced into a silicon wafer during ion implantation |
KR100237829B1 (ko) | 1997-02-06 | 2000-01-15 | 윤종용 | 웨이퍼의 결함 분석방법 |
DE69841714D1 (de) | 1997-04-09 | 2010-07-22 | Memc Electronic Materials | Silicium mit niedriger Fehlerdichte und idealem Sauerstoffniederschlag |
SG105510A1 (en) * | 1997-04-09 | 2004-08-27 | Memc Electronic Materials | Low defect density silicon |
DE69738129D1 (de) * | 1997-07-15 | 2007-10-25 | St Microelectronics Srl | Bestimmung der Dicke der Blosszone in einer Siliziumscheibe |
JPH11297779A (ja) * | 1998-04-10 | 1999-10-29 | Sony Corp | 半導体装置の欠陥検出方法およびその製造方法 |
JP3746153B2 (ja) | 1998-06-09 | 2006-02-15 | 信越半導体株式会社 | シリコンウエーハの熱処理方法 |
JP3670142B2 (ja) * | 1998-09-18 | 2005-07-13 | 東京エレクトロン株式会社 | シリコン基板の再結合ライフタイム測定の前処理方法 |
JP2001081000A (ja) | 1999-09-08 | 2001-03-27 | Shin Etsu Handotai Co Ltd | シリコン単結晶の結晶欠陥評価方法 |
JP2001217251A (ja) | 1999-11-26 | 2001-08-10 | Mitsubishi Materials Silicon Corp | シリコンウェーハの熱処理方法 |
JP3731417B2 (ja) * | 1999-11-26 | 2006-01-05 | 株式会社Sumco | 点欠陥の凝集体が存在しないシリコンウェーハの製造方法 |
JP4510997B2 (ja) | 2000-01-18 | 2010-07-28 | シルトロニック・ジャパン株式会社 | シリコン半導体基板およびその製造方法 |
US6569691B1 (en) * | 2000-03-29 | 2003-05-27 | Semiconductor Diagnostics, Inc. | Measurement of different mobile ion concentrations in the oxide layer of a semiconductor wafer |
US6512384B1 (en) * | 2000-06-29 | 2003-01-28 | Semiconductor Diagnostics, Inc. | Method for fast and accurate determination of the minority carrier diffusion length from simultaneously measured surface photovoltages |
JP4463957B2 (ja) * | 2000-09-20 | 2010-05-19 | 信越半導体株式会社 | シリコンウエーハの製造方法およびシリコンウエーハ |
JP4720058B2 (ja) * | 2000-11-28 | 2011-07-13 | 株式会社Sumco | シリコンウェーハの製造方法 |
KR20030030634A (ko) * | 2001-10-12 | 2003-04-18 | 삼성전자주식회사 | 웨이퍼 표면 결함 분석 방법 |
JP2004087594A (ja) * | 2002-08-23 | 2004-03-18 | Alps Electric Co Ltd | 電子回路ユニットの放熱構造 |
EP1559812B1 (en) * | 2002-10-18 | 2010-12-15 | Sumco Corporation | Method of measuring point defect distribution of silicon single crystal ingot |
JP4670224B2 (ja) * | 2003-04-01 | 2011-04-13 | 株式会社Sumco | シリコンウェーハの製造方法 |
JP5010091B2 (ja) * | 2003-11-13 | 2012-08-29 | 株式会社Sumco | 高抵抗シリコンウェーハ |
US6922067B1 (en) * | 2003-11-18 | 2005-07-26 | Ahbee 2, L.P. | Determination of minority carrier diffusion length in solid state materials |
-
2006
- 2006-06-20 JP JP2006169888A patent/JP4743010B2/ja active Active
- 2006-08-18 MY MYPI20063974A patent/MY137864A/en unknown
- 2006-08-23 EP EP06017556A patent/EP1758158B1/en active Active
- 2006-08-24 SG SG200605807-7A patent/SG130168A1/en unknown
- 2006-08-25 US US11/467,411 patent/US7632349B2/en active Active
- 2006-08-25 KR KR1020060081243A patent/KR100768378B1/ko active IP Right Grant
- 2006-08-28 CN CN2006101219172A patent/CN1932496B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
JP4743010B2 (ja) | 2011-08-10 |
MY137864A (en) | 2009-03-31 |
CN1932496B (zh) | 2011-10-12 |
KR20070024431A (ko) | 2007-03-02 |
US7632349B2 (en) | 2009-12-15 |
JP2007088421A (ja) | 2007-04-05 |
US20070044709A1 (en) | 2007-03-01 |
EP1758158A2 (en) | 2007-02-28 |
EP1758158A3 (en) | 2009-07-22 |
CN1932496A (zh) | 2007-03-21 |
KR100768378B1 (ko) | 2007-10-18 |
EP1758158B1 (en) | 2011-06-15 |
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