SG129364A1 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
SG129364A1
SG129364A1 SG200604502A SG200604502A SG129364A1 SG 129364 A1 SG129364 A1 SG 129364A1 SG 200604502 A SG200604502 A SG 200604502A SG 200604502 A SG200604502 A SG 200604502A SG 129364 A1 SG129364 A1 SG 129364A1
Authority
SG
Singapore
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
SG200604502A
Other languages
English (en)
Inventor
Nobuaki Hashimoto
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of SG129364A1 publication Critical patent/SG129364A1/en

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Classifications

    • H—ELECTRICITY
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    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
SG200604502A 2005-07-11 2006-07-04 Semiconductor device SG129364A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005201798A JP4224717B2 (ja) 2005-07-11 2005-07-11 半導体装置

Publications (1)

Publication Number Publication Date
SG129364A1 true SG129364A1 (en) 2007-02-26

Family

ID=36952410

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200604502A SG129364A1 (en) 2005-07-11 2006-07-04 Semiconductor device

Country Status (7)

Country Link
US (2) US7705453B2 (fr)
EP (1) EP1744361A3 (fr)
JP (1) JP4224717B2 (fr)
KR (1) KR100759308B1 (fr)
CN (1) CN100438005C (fr)
SG (1) SG129364A1 (fr)
TW (1) TWI323030B (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008227241A (ja) * 2007-03-14 2008-09-25 Seiko Epson Corp 電子装置及びその製造方法
JP4924831B2 (ja) * 2007-08-03 2012-04-25 セイコーエプソン株式会社 半導体装置及び電子デバイス
JP4396746B2 (ja) * 2007-08-13 2010-01-13 セイコーエプソン株式会社 電子デバイス
KR101415567B1 (ko) * 2007-12-11 2014-07-04 삼성디스플레이 주식회사 가요성 인쇄 회로막 및 이를 포함하는 표시 장치
JP4888462B2 (ja) * 2008-09-24 2012-02-29 セイコーエプソン株式会社 電子部品の実装構造
CN110323323A (zh) * 2018-03-29 2019-10-11 豪雅冠得股份有限公司 光照射模块以及led元件用配线基板

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02272737A (ja) * 1989-04-14 1990-11-07 Citizen Watch Co Ltd 半導体の突起電極構造及び突起電極形成方法
JP2958136B2 (ja) * 1991-03-08 1999-10-06 株式会社日立製作所 半導体集積回路装置、その製造方法および実装構造
KR950008261B1 (ko) * 1991-12-03 1995-07-26 삼성전자주식회사 반도체장치의 제조방법
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US7705453B2 (en) 2010-04-27
TWI323030B (en) 2010-04-01
TW200707687A (en) 2007-02-16
JP4224717B2 (ja) 2009-02-18
EP1744361A2 (fr) 2007-01-17
CN1897261A (zh) 2007-01-17
JP2007019408A (ja) 2007-01-25
US20070007651A1 (en) 2007-01-11
US20100155944A1 (en) 2010-06-24
US8138612B2 (en) 2012-03-20
KR100759308B1 (ko) 2007-09-17
EP1744361A3 (fr) 2009-07-29
CN100438005C (zh) 2008-11-26

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