SG120946A1 - Acoustic wave device and method of producing the same - Google Patents
Acoustic wave device and method of producing the sameInfo
- Publication number
- SG120946A1 SG120946A1 SG200304838A SG200304838A SG120946A1 SG 120946 A1 SG120946 A1 SG 120946A1 SG 200304838 A SG200304838 A SG 200304838A SG 200304838 A SG200304838 A SG 200304838A SG 120946 A1 SG120946 A1 SG 120946A1
- Authority
- SG
- Singapore
- Prior art keywords
- producing
- same
- acoustic wave
- wave device
- acoustic
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1078—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a foil covering the non-active sides of the SAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0595—Holders; Supports the holder support and resonator being formed in one body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1035—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/21—Crystal tuning forks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15182—Fan-in arrangement of the internal vias
- H01L2924/15184—Fan-in arrangement of the internal vias in different layers of the multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002236151A JP2004080221A (ja) | 2002-08-13 | 2002-08-13 | 弾性波デバイス及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG120946A1 true SG120946A1 (en) | 2006-04-26 |
Family
ID=32020411
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200304838A SG120946A1 (en) | 2002-08-13 | 2003-08-11 | Acoustic wave device and method of producing the same |
Country Status (5)
Country | Link |
---|---|
US (1) | US20040104791A1 (ja) |
JP (1) | JP2004080221A (ja) |
KR (1) | KR20040015688A (ja) |
CN (1) | CN1495999A (ja) |
SG (1) | SG120946A1 (ja) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006109400A (ja) * | 2004-09-13 | 2006-04-20 | Seiko Epson Corp | 電子部品、回路基板、電子機器、電子部品の製造方法 |
US7466012B2 (en) * | 2004-09-13 | 2008-12-16 | International Rectifier Corporation | Power semiconductor package |
JP2006197554A (ja) * | 2004-12-17 | 2006-07-27 | Seiko Epson Corp | 弾性表面波デバイス及びその製造方法、icカード、携帯用電子機器 |
JP4518255B2 (ja) * | 2004-12-22 | 2010-08-04 | セイコーエプソン株式会社 | 弾性表面波素子および電子機器 |
US7615406B2 (en) | 2005-01-28 | 2009-11-10 | Panasonic Corporation | Electronic device package manufacturing method and electronic device package |
JP4692024B2 (ja) * | 2005-03-04 | 2011-06-01 | パナソニック株式会社 | 弾性表面波デバイス |
US7495462B2 (en) * | 2005-03-24 | 2009-02-24 | Memsic, Inc. | Method of wafer-level packaging using low-aspect ratio through-wafer holes |
KR100691160B1 (ko) * | 2005-05-06 | 2007-03-09 | 삼성전기주식회사 | 적층형 표면탄성파 패키지 및 그 제조방법 |
US7619347B1 (en) | 2005-05-24 | 2009-11-17 | Rf Micro Devices, Inc. | Layer acoustic wave device and method of making the same |
US7687400B2 (en) | 2005-06-14 | 2010-03-30 | John Trezza | Side stacking apparatus and method |
US7781886B2 (en) * | 2005-06-14 | 2010-08-24 | John Trezza | Electronic chip contact structure |
US7838997B2 (en) | 2005-06-14 | 2010-11-23 | John Trezza | Remote chip attachment |
US7786592B2 (en) | 2005-06-14 | 2010-08-31 | John Trezza | Chip capacitive coupling |
US20060278996A1 (en) * | 2005-06-14 | 2006-12-14 | John Trezza | Active packaging |
US8456015B2 (en) | 2005-06-14 | 2013-06-04 | Cufer Asset Ltd. L.L.C. | Triaxial through-chip connection |
US7560813B2 (en) | 2005-06-14 | 2009-07-14 | John Trezza | Chip-based thermo-stack |
US7851348B2 (en) | 2005-06-14 | 2010-12-14 | Abhay Misra | Routingless chip architecture |
US7767493B2 (en) * | 2005-06-14 | 2010-08-03 | John Trezza | Post & penetration interconnection |
US7989958B2 (en) | 2005-06-14 | 2011-08-02 | Cufer Assett Ltd. L.L.C. | Patterned contact |
JP2007104458A (ja) * | 2005-10-06 | 2007-04-19 | Ube Ind Ltd | 薄膜圧電共振子デバイスおよびその製造方法 |
KR100662848B1 (ko) * | 2005-12-20 | 2007-01-02 | 삼성전자주식회사 | 인덕터 집적 칩 및 그 제조방법 |
JP2007189501A (ja) * | 2006-01-13 | 2007-07-26 | Matsushita Electric Ind Co Ltd | 電子部品 |
EP1976118A4 (en) * | 2006-01-18 | 2011-12-14 | Murata Manufacturing Co | ACOUSTIC SURFACE WAVE DEVICE AND LIMIT ACOUSTIC WAVE DEVICE |
KR100731351B1 (ko) * | 2006-02-01 | 2007-06-21 | 삼성전자주식회사 | 탄성 표면파 디바이스 웨이퍼 레벨 패키지 및 그 패키징방법 |
US20070188054A1 (en) * | 2006-02-13 | 2007-08-16 | Honeywell International Inc. | Surface acoustic wave packages and methods of forming same |
US7687397B2 (en) | 2006-06-06 | 2010-03-30 | John Trezza | Front-end processed wafer having through-chip connections |
JP2008113178A (ja) * | 2006-10-30 | 2008-05-15 | Hitachi Media Electoronics Co Ltd | 中空封止素子およびその製造方法 |
JP4825111B2 (ja) * | 2006-11-06 | 2011-11-30 | 太陽誘電株式会社 | 圧電薄膜デバイスの製造方法 |
JP2008135999A (ja) * | 2006-11-28 | 2008-06-12 | Fujitsu Media Device Kk | 弾性波デバイスおよびその製造方法 |
US8490260B1 (en) | 2007-01-17 | 2013-07-23 | Rf Micro Devices, Inc. | Method of manufacturing SAW device substrates |
US7408286B1 (en) * | 2007-01-17 | 2008-08-05 | Rf Micro Devices, Inc. | Piezoelectric substrate for a saw device |
US7670874B2 (en) * | 2007-02-16 | 2010-03-02 | John Trezza | Plated pillar package formation |
JP5128381B2 (ja) * | 2008-06-23 | 2013-01-23 | 日本電波工業株式会社 | 圧電デバイスとその製造方法 |
US7833829B2 (en) * | 2008-10-28 | 2010-11-16 | Honeywell International Inc. | MEMS devices and methods of assembling micro electromechanical systems (MEMS) |
JP2011029911A (ja) * | 2009-07-24 | 2011-02-10 | Seiko Instruments Inc | 圧電振動子の製造方法、並びに圧電振動子、発振器、電子機器および電波時計 |
JP5642436B2 (ja) * | 2010-07-01 | 2014-12-17 | セイコーインスツル株式会社 | 電子デバイス、電子機器及び電子デバイスの製造方法 |
CN103999365B (zh) * | 2011-12-27 | 2016-05-18 | 京瓷株式会社 | 电子部件 |
KR101852894B1 (ko) * | 2014-02-17 | 2018-04-27 | 후아웨이 디바이스 (둥관) 컴퍼니 리미티드 | 안테나 스위칭 시스템 및 방법 |
JP6701161B2 (ja) * | 2015-02-18 | 2020-05-27 | 株式会社村田製作所 | 圧電振動デバイス及びその製造方法 |
KR102460753B1 (ko) * | 2016-03-17 | 2022-10-31 | 삼성전기주식회사 | 소자 패키지 및 그 제조방법 |
CN111952199A (zh) * | 2019-05-16 | 2020-11-17 | 中芯集成电路(宁波)有限公司 | 空气隙型半导体器件封装结构及其制作方法 |
DE102019120844A1 (de) * | 2019-08-01 | 2021-02-04 | Horst Siedle Gmbh & Co. Kg | Verfahren zur Herstellung von abgedichteten Funktionselementen |
CN112367061A (zh) * | 2020-09-16 | 2021-02-12 | 厦门云天半导体科技有限公司 | 一种基于玻璃盖板的声表面滤波器封装方法及结构 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4362961A (en) * | 1979-07-06 | 1982-12-07 | Ebauches, S.A. | Encapsulated piezoelectric resonator device |
US4652787A (en) * | 1984-02-15 | 1987-03-24 | Asulab S.A. | Piezoelectric oscillator |
US4734608A (en) * | 1985-11-07 | 1988-03-29 | Alps Electric Co., Ltd. | Elastic surface wave element |
US5920142A (en) * | 1996-03-08 | 1999-07-06 | Matsushita Electric Industrial Co., Ltd. | Electronic part and a method of production thereof |
JP2000077970A (ja) * | 1998-09-02 | 2000-03-14 | Murata Mfg Co Ltd | 電子部品及びその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2338607A1 (fr) * | 1976-01-16 | 1977-08-12 | France Etat | Resonateur a quartz a electrodes non adherentes au cristal |
US4354133A (en) * | 1980-08-29 | 1982-10-12 | The United States Of America As Represented By The Secretary Of The Army | Hermetically sealed container |
US5233259A (en) * | 1991-02-19 | 1993-08-03 | Westinghouse Electric Corp. | Lateral field FBAR |
JP3328102B2 (ja) * | 1995-05-08 | 2002-09-24 | 松下電器産業株式会社 | 弾性表面波装置及びその製造方法 |
JPH11150440A (ja) * | 1997-11-14 | 1999-06-02 | Nec Corp | フリップチップ実装型表面弾性波素子の樹脂封止構造 |
JP3439975B2 (ja) * | 1998-01-29 | 2003-08-25 | 京セラ株式会社 | 弾性表面波装置 |
JP3514361B2 (ja) * | 1998-02-27 | 2004-03-31 | Tdk株式会社 | チップ素子及びチップ素子の製造方法 |
JP3887137B2 (ja) * | 1999-01-29 | 2007-02-28 | セイコーインスツル株式会社 | 圧電振動子の製造方法 |
CA2399842C (en) * | 2000-03-02 | 2006-11-14 | Microchips, Inc. | Microfabricated devices for the storage and selective exposure of chemicals and devices |
JP3436249B2 (ja) * | 2000-11-21 | 2003-08-11 | 株式会社大真空 | 圧電振動デバイス用パッケージおよび圧電発振器 |
-
2002
- 2002-08-13 JP JP2002236151A patent/JP2004080221A/ja active Pending
-
2003
- 2003-08-11 SG SG200304838A patent/SG120946A1/en unknown
- 2003-08-12 KR KR1020030055652A patent/KR20040015688A/ko not_active Application Discontinuation
- 2003-08-13 US US10/639,646 patent/US20040104791A1/en not_active Abandoned
- 2003-08-13 CN CNA031278809A patent/CN1495999A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4362961A (en) * | 1979-07-06 | 1982-12-07 | Ebauches, S.A. | Encapsulated piezoelectric resonator device |
US4652787A (en) * | 1984-02-15 | 1987-03-24 | Asulab S.A. | Piezoelectric oscillator |
US4734608A (en) * | 1985-11-07 | 1988-03-29 | Alps Electric Co., Ltd. | Elastic surface wave element |
US5920142A (en) * | 1996-03-08 | 1999-07-06 | Matsushita Electric Industrial Co., Ltd. | Electronic part and a method of production thereof |
JP2000077970A (ja) * | 1998-09-02 | 2000-03-14 | Murata Mfg Co Ltd | 電子部品及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2004080221A (ja) | 2004-03-11 |
KR20040015688A (ko) | 2004-02-19 |
CN1495999A (zh) | 2004-05-12 |
US20040104791A1 (en) | 2004-06-03 |
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