SG11202111547QA - Rapid flush purging during atomic layer deposition - Google Patents

Rapid flush purging during atomic layer deposition

Info

Publication number
SG11202111547QA
SG11202111547QA SG11202111547QA SG11202111547QA SG11202111547QA SG 11202111547Q A SG11202111547Q A SG 11202111547QA SG 11202111547Q A SG11202111547Q A SG 11202111547QA SG 11202111547Q A SG11202111547Q A SG 11202111547QA SG 11202111547Q A SG11202111547Q A SG 11202111547QA
Authority
SG
Singapore
Prior art keywords
layer deposition
atomic layer
during atomic
purging during
rapid flush
Prior art date
Application number
SG11202111547QA
Other languages
English (en)
Inventor
Pragna Nannapaneni
Sema Ermez
Novy Tjokro
Ruopeng Deng
Tianhua Yu
Xiaolan Ba
Juwen Gao
Sanjay Gopinath
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of SG11202111547QA publication Critical patent/SG11202111547QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SG11202111547QA 2019-04-19 2020-04-15 Rapid flush purging during atomic layer deposition SG11202111547QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962836275P 2019-04-19 2019-04-19
PCT/US2020/028360 WO2020214732A1 (en) 2019-04-19 2020-04-15 Rapid flush purging during atomic layer deposition

Publications (1)

Publication Number Publication Date
SG11202111547QA true SG11202111547QA (en) 2021-11-29

Family

ID=72836962

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202111547QA SG11202111547QA (en) 2019-04-19 2020-04-15 Rapid flush purging during atomic layer deposition

Country Status (6)

Country Link
US (1) US12060639B2 (zh)
JP (1) JP2022529056A (zh)
KR (1) KR20210143943A (zh)
CN (1) CN113728415A (zh)
SG (1) SG11202111547QA (zh)
WO (1) WO2020214732A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240290585A1 (en) * 2023-02-23 2024-08-29 Applied Materials, Inc. Higher pressure purge for impurity reduction in radical treatment chamber

Family Cites Families (127)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1483144A (en) 1975-04-07 1977-08-17 British Petroleum Co Protective films
JPS618945A (ja) 1984-06-25 1986-01-16 Nec Corp 半導体集積回路装置
US5221556A (en) 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
ES2043640T3 (es) 1987-12-21 1994-01-01 Union Carbide Corp Fluidos supercriticos como diluyentes en la aplicacion por rociada liquida de revestimientos.
CA2009518C (en) 1990-02-07 2000-10-17 Luc Ouellet Spin-on glass processing technique for the fabrication of semiconductor device
US5225366A (en) 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
US5932289A (en) 1991-05-28 1999-08-03 Trikon Technologies Limited Method for filling substrate recesses using pressure and heat treatment
US5387546A (en) 1992-06-22 1995-02-07 Canon Sales Co., Inc. Method for manufacturing a semiconductor device
JP3262334B2 (ja) 1992-07-04 2002-03-04 トリコン ホルディングズ リミテッド 半導体ウエハーを処理する方法
CA2131668C (en) 1993-12-23 1999-03-02 Carol Galli Isolation structure using liquid phase oxide deposition
US5858880A (en) 1994-05-14 1999-01-12 Trikon Equipment Limited Method of treating a semi-conductor wafer
US5534731A (en) 1994-10-28 1996-07-09 Advanced Micro Devices, Incorporated Layered low dielectric constant technology
JPH08153784A (ja) 1994-11-28 1996-06-11 Nec Corp 半導体装置の製造方法
US5960300A (en) 1994-12-20 1999-09-28 Matsushita Electric Industrial Co., Ltd. Method of manufacturing semiconductor device
US5747381A (en) 1996-02-12 1998-05-05 Taiwan Semiconductor Manufacturing Company, Ltd. Technique for the removal of residual spin-on-glass (SOG) after full SOG etchback
KR0183886B1 (ko) 1996-06-17 1999-04-15 김광호 반도체장치의 트렌치 소자분리 방법
US5807785A (en) 1996-08-02 1998-09-15 Applied Materials, Inc. Low dielectric constant silicon dioxide sandwich layer
GB2331626B (en) 1996-08-24 2001-06-13 Trikon Equip Ltd Method and apparatus for depositing a planarized dielectric layer on a semiconductor substrate
FR2756663B1 (fr) 1996-12-04 1999-02-26 Berenguer Marc Procede de traitement d'un substrat semi-conducteur comprenant une etape de traitement de surface
US6114224A (en) 1997-01-21 2000-09-05 Advanced Micro Devices System and method for using N2 O plasma treatment to eliminate defects at an interface between a stop layer and an integral layered dielectric
US5866945A (en) 1997-10-16 1999-02-02 Advanced Micro Devices Borderless vias with HSQ gap filled patterned metal layers
TW354417B (en) 1997-10-18 1999-03-11 United Microelectronics Corp A method for forming a planarized dielectric layer
GB9801359D0 (en) 1998-01-23 1998-03-18 Poulton Limited Methods and apparatus for treating a substrate
GB9801655D0 (en) 1998-01-28 1998-03-25 Trikon Equip Ltd Method and apparatus for treating a substrate
US6054379A (en) 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6287990B1 (en) 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
US6593247B1 (en) 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
US6413583B1 (en) 1998-02-11 2002-07-02 Applied Materials, Inc. Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
US6218268B1 (en) 1998-05-05 2001-04-17 Applied Materials, Inc. Two-step borophosphosilicate glass deposition process and related devices and apparatus
TW405223B (en) 1998-07-28 2000-09-11 United Microelectronics Corp Method for avoiding the poisoning at the trench of the dual damascene structure and the dielectric hole
US6316052B1 (en) 1998-08-19 2001-11-13 Anelva Corporation Method for the surface treatment of vacuum materials and surface treated vacuum
US6383951B1 (en) 1998-09-03 2002-05-07 Micron Technology, Inc. Low dielectric constant material for integrated circuit fabrication
US6245690B1 (en) 1998-11-04 2001-06-12 Applied Materials, Inc. Method of improving moisture resistance of low dielectric constant films
JP2002538604A (ja) 1999-02-26 2002-11-12 トリコン ホールディングス リミティド ポリマー層の処理方法
EP1202719B1 (en) 1999-06-21 2006-05-31 Kuhnil Pharmaceutical Co., Ltd. Anesthetic composition for intravenous injection comprising propofol
GB2354528B (en) 1999-09-25 2004-03-10 Trikon Holdings Ltd Delivery of liquid precursors to semiconductor processing reactors
US6114259A (en) 1999-07-27 2000-09-05 Lsi Logic Corporation Process for treating exposed surfaces of a low dielectric constant carbon doped silicon oxide dielectric material to protect the material from damage
EP1077274A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes
EP1077479A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Post-deposition treatment to enchance properties of Si-O-C low K film
US6300219B1 (en) 1999-08-30 2001-10-09 Micron Technology, Inc. Method of forming trench isolation regions
TW439194B (en) 2000-01-24 2001-06-07 United Microelectronics Corp Manufacturing method of shallow trench isolation region
EP1139404A1 (en) 2000-03-31 2001-10-04 Applied Materials, Inc. Low thermal budget solution for PMD application using SACVD layer
US6309933B1 (en) 2000-06-05 2001-10-30 Chartered Semiconductor Manufacturing Ltd. Method of fabricating T-shaped recessed polysilicon gate transistors
JP4654544B2 (ja) 2000-07-12 2011-03-23 日産化学工業株式会社 リソグラフィー用ギャップフィル材形成組成物
US6323123B1 (en) 2000-09-06 2001-11-27 United Microelectronics Corp. Low-K dual damascene integration process
US6576564B2 (en) 2000-12-07 2003-06-10 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
KR100354442B1 (ko) 2000-12-11 2002-09-28 삼성전자 주식회사 반도체 장치의 스핀 온 글래스 절연막 형성 방법
US6858195B2 (en) 2001-02-23 2005-02-22 Lsi Logic Corporation Process for forming a low dielectric constant fluorine and carbon-containing silicon oxide dielectric material
US7001778B2 (en) 2001-03-09 2006-02-21 Symetrix Corporation Method of making layered superlattice material with improved microstructure
US6902947B2 (en) 2001-05-07 2005-06-07 Applied Materials, Inc. Integrated method for release and passivation of MEMS structures
US6828162B1 (en) 2001-06-28 2004-12-07 Advanced Micro Devices, Inc. System and method for active control of BPSG deposition
US6620745B2 (en) 2001-10-19 2003-09-16 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming a blocking layer
WO2003072268A1 (en) 2002-02-22 2003-09-04 Terrasimco Inc. Bladder-based apparatus and method for dispensing coatings
TW538461B (en) 2002-02-26 2003-06-21 Silicon Integrated Sys Corp Device for depositing an insulating layer in a trench
DE10211544C1 (de) 2002-03-15 2003-11-27 Infineon Technologies Ag Verfahren zur Herstellung einer Kondensatorelektrode eines Grabenkondensators aus flüssiger Phase
JP4959921B2 (ja) 2002-03-28 2012-06-27 プレジデント アンド フェロウズ オブ ハーバード カレッジ 二酸化珪素ナノラミネートの蒸着
US6743736B2 (en) 2002-04-11 2004-06-01 Micron Technology, Inc. Reactive gaseous deposition precursor feed apparatus
US7056560B2 (en) 2002-05-08 2006-06-06 Applies Materials Inc. Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD)
US6909300B2 (en) 2002-05-09 2005-06-21 Taiwan Semiconductor Manufacturing Co., Ltd Method for fabricating microelectronic fabrication electrical test apparatus electrical probe tip having pointed tips
US20060014384A1 (en) 2002-06-05 2006-01-19 Jong-Cheol Lee Method of forming a layer and forming a capacitor of a semiconductor device having the same layer
US6812135B2 (en) 2002-10-30 2004-11-02 Taiwan Semiconductor Manufacturing Company, Ltd Adhesion enhancement between CVD dielectric and spin-on low-k silicate films
AU2003296988A1 (en) 2002-12-19 2004-07-29 Matrix Semiconductor, Inc An improved method for making high-density nonvolatile memory
US7205248B2 (en) 2003-02-04 2007-04-17 Micron Technology, Inc. Method of eliminating residual carbon from flowable oxide fill
KR20040074348A (ko) 2003-02-17 2004-08-25 삼성전자주식회사 박막 형성 방법 및 이를 이용한 트렌치 소자 분리막의형성 방법
JP2004292636A (ja) 2003-03-27 2004-10-21 Shin Etsu Chem Co Ltd 多孔質膜形成用組成物、多孔質膜の製造方法、多孔質膜、層間絶縁膜、及び半導体装置
US7238604B2 (en) 2003-04-24 2007-07-03 Intel Corporation Forming thin hard mask over air gap or porous dielectric
US6693050B1 (en) 2003-05-06 2004-02-17 Applied Materials Inc. Gapfill process using a combination of spin-on-glass deposition and chemical vapor deposition techniques
US20040229452A1 (en) 2003-05-15 2004-11-18 Johnston Steven W. Densifying a relatively porous material
US7074727B2 (en) 2003-07-09 2006-07-11 Taiwan Semiconductor Manufacturing Company, Ltd. Process for improving dielectric properties in low-k organosilicate dielectric material
US7192891B2 (en) 2003-08-01 2007-03-20 Samsung Electronics, Co., Ltd. Method for forming a silicon oxide layer using spin-on glass
KR100673884B1 (ko) 2003-09-22 2007-01-25 주식회사 하이닉스반도체 습식 세정에 의한 어택을 방지할 수 있는 반도체 장치제조 방법
KR100645458B1 (ko) 2003-10-02 2006-11-13 주식회사 하이닉스반도체 습식 세정에 의한 어택을 방지할 수 있는 반도체 장치제조 방법
KR100571658B1 (ko) 2003-11-21 2006-04-17 주식회사 하이닉스반도체 반도체소자 제조 방법
US20050136684A1 (en) 2003-12-23 2005-06-23 Applied Materials, Inc. Gap-fill techniques
JP2005260040A (ja) 2004-02-12 2005-09-22 Sony Corp ドーピング方法、半導体装置の製造方法および電子応用装置の製造方法
JP2005229075A (ja) 2004-02-16 2005-08-25 Tokyo Electron Ltd 積層膜の改質方法及び積層膜
KR100538096B1 (ko) * 2004-03-16 2005-12-21 삼성전자주식회사 원자층 증착 방법을 이용하는 커패시터 형성 방법
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
US7074690B1 (en) 2004-03-25 2006-07-11 Novellus Systems, Inc. Selective gap-fill process
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US7033945B2 (en) 2004-06-01 2006-04-25 Applied Materials Gap filling with a composite layer
US7521378B2 (en) 2004-07-01 2009-04-21 Micron Technology, Inc. Low temperature process for polysilazane oxidation/densification
US7153783B2 (en) 2004-07-07 2006-12-26 Honeywell International Inc. Materials with enhanced properties for shallow trench isolation/premetal dielectric applications
KR100546161B1 (ko) 2004-07-13 2006-01-24 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 제조 방법
KR100636037B1 (ko) 2004-11-19 2006-10-18 삼성전자주식회사 티타늄 질화막 형성 방법 및 이를 수행하기 위한 장치
US7211525B1 (en) 2005-03-16 2007-05-01 Novellus Systems, Inc. Hydrogen treatment enhanced gap fill
US8598044B2 (en) 2005-03-25 2013-12-03 Renesas Electronics Corporation Method of fabricating a semiconductor device
US7585704B2 (en) 2005-04-01 2009-09-08 International Business Machines Corporation Method of producing highly strained PECVD silicon nitride thin films at low temperature
US7575633B2 (en) 2005-05-17 2009-08-18 Nordson Corporation Fluid dispenser with positive displacement pump
US8129290B2 (en) 2005-05-26 2012-03-06 Applied Materials, Inc. Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure
US7566655B2 (en) 2005-05-26 2009-07-28 Applied Materials, Inc. Integration process for fabricating stressed transistor structure
US8138104B2 (en) 2005-05-26 2012-03-20 Applied Materials, Inc. Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure
US20070054505A1 (en) 2005-09-02 2007-03-08 Antonelli George A PECVD processes for silicon dioxide films
US20070065578A1 (en) * 2005-09-21 2007-03-22 Applied Materials, Inc. Treatment processes for a batch ALD reactor
JPWO2007080944A1 (ja) 2006-01-13 2009-06-11 東京エレクトロン株式会社 多孔質膜の成膜方法およびコンピュータ可読記録媒体
EP2024532A4 (en) 2006-05-30 2014-08-06 Applied Materials Inc HIGH QUALITY SILICON DIOXIDE VAPOR PHASE CHEMICAL DEPOSITION FROM A PRECURSOR CONTAINING SILICON AND ATOMIC OXYGEN
US7790634B2 (en) 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US7498273B2 (en) 2006-05-30 2009-03-03 Applied Materials, Inc. Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes
US8232176B2 (en) 2006-06-22 2012-07-31 Applied Materials, Inc. Dielectric deposition and etch back processes for bottom up gapfill
JP2008028058A (ja) 2006-07-20 2008-02-07 Tokyo Electron Ltd 半導体装置の製造方法、半導体装置の製造装置、半導体装置及び記憶媒体
US7727906B1 (en) 2006-07-26 2010-06-01 Novellus Systems, Inc. H2-based plasma treatment to eliminate within-batch and batch-to-batch etch drift
KR100839529B1 (ko) 2006-09-29 2008-06-19 주식회사 하이닉스반도체 반도체소자의 소자분리막 형성 방법
US7888273B1 (en) 2006-11-01 2011-02-15 Novellus Systems, Inc. Density gradient-free gap fill
KR101284146B1 (ko) 2007-07-19 2013-07-10 삼성전자주식회사 트렌치 소자분리 영역을 갖는 반도체소자 및 그 제조방법
US7745352B2 (en) 2007-08-27 2010-06-29 Applied Materials, Inc. Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process
US7541297B2 (en) 2007-10-22 2009-06-02 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill
US7803722B2 (en) 2007-10-22 2010-09-28 Applied Materials, Inc Methods for forming a dielectric layer within trenches
KR100945927B1 (ko) 2008-03-05 2010-03-05 주식회사 하이닉스반도체 반도체 메모리장치의 제조방법
US7622369B1 (en) 2008-05-30 2009-11-24 Asm Japan K.K. Device isolation technology on semiconductor substrate
US7655532B1 (en) 2008-07-25 2010-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. STI film property using SOD post-treatment
US7804130B1 (en) 2008-08-26 2010-09-28 Taiwan Semiconductor Manufacturing Co., Ltd. Self-aligned V-channel MOSFET
JP5195175B2 (ja) 2008-08-29 2013-05-08 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US20100109155A1 (en) 2008-11-05 2010-05-06 Chartered Semiconductor Manufacturing, Ltd. Reliable interconnect integration
US8557712B1 (en) 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
KR101561862B1 (ko) 2008-12-26 2015-10-21 삼성전자 주식회사 반도체 집적 회로 장치의 제조 방법
JP5225957B2 (ja) 2009-09-17 2013-07-03 東京エレクトロン株式会社 成膜方法および記憶媒体
US8278224B1 (en) * 2009-09-24 2012-10-02 Novellus Systems, Inc. Flowable oxide deposition using rapid delivery of process gases
US8329587B2 (en) 2009-10-05 2012-12-11 Applied Materials, Inc. Post-planarization densification
KR101758944B1 (ko) 2009-12-09 2017-07-18 노벨러스 시스템즈, 인코포레이티드 신규한 갭 충진 집적화
US20120149213A1 (en) 2010-12-09 2012-06-14 Lakshminarayana Nittala Bottom up fill in high aspect ratio trenches
US8685867B1 (en) 2010-12-09 2014-04-01 Novellus Systems, Inc. Premetal dielectric integration process
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
US8846536B2 (en) 2012-03-05 2014-09-30 Novellus Systems, Inc. Flowable oxide film with tunable wet etch rate
US10367080B2 (en) * 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10927459B2 (en) * 2017-10-16 2021-02-23 Asm Ip Holding B.V. Systems and methods for atomic layer deposition
CN112262457A (zh) * 2018-05-03 2021-01-22 朗姆研究公司 在3d nand结构中沉积钨和其他金属的方法

Also Published As

Publication number Publication date
KR20210143943A (ko) 2021-11-29
US12060639B2 (en) 2024-08-13
US20220186370A1 (en) 2022-06-16
WO2020214732A1 (en) 2020-10-22
JP2022529056A (ja) 2022-06-16
CN113728415A (zh) 2021-11-30

Similar Documents

Publication Publication Date Title
GB2591002B (en) Polymerizable self-assembled monolayers for use in atomic layer deposition
SG11201911413UA (en) Methods of atomic layer deposition for selective film growth
SG10201606450VA (en) Atomic layer etching of tungsten for enhanced tungsten deposition fill
SG11202102915TA (en) Methods for depositing tungsten or molybdenum films
EP3512978A4 (en) DEVICE AND METHOD FOR ATOMIC LAYER DEPOSITION
SG11202111962QA (en) Modulated atomic layer deposition
EP3744795A4 (en) RESIN COMPOSITION FOR THE PRODUCTION OF A HARD COATING LAYER
SG11202111277UA (en) High step coverage tungsten deposition
SG11202105622YA (en) Method and apparatus for atomic layer deposition or chemical vapor deposition
SG11202111547QA (en) Rapid flush purging during atomic layer deposition
GB2588938B (en) Sputter deposition
GB2588942B (en) Sputter deposition
ZA202106066B (en) Method for electrolytically depositing a chromium oxide layer
EP3414357A4 (en) DEVICE FOR ATMOSPHERIC DEPOSITION
GB202014592D0 (en) Deposition method
GB2588934B (en) Sputter deposition
GB201909538D0 (en) Deposition apparatus
SG11202009447XA (en) Process for transferring a layer
SG11202112930PA (en) Atomic layer process printer
EP3959355A4 (en) ATOMIC LAYER DEPOSITION (ALD) APPARATUS AND METHOD
IL282897A (en) A method for producing a thin layer of metallic ruthenium using an atomic layer deposition method
SG11202013097VA (en) Oxidative conversion in atomic layer deposition processes
KR102288960B9 (ko) 박막증착방법
HUE062596T2 (hu) Anyag felület-erõsítõ kezeléshez
SG10201910117TA (en) Layer debonding