SG11202002928WA - Mask blank, phase shift mask, and method of manufacturing semiconductor device - Google Patents

Mask blank, phase shift mask, and method of manufacturing semiconductor device

Info

Publication number
SG11202002928WA
SG11202002928WA SG11202002928WA SG11202002928WA SG11202002928WA SG 11202002928W A SG11202002928W A SG 11202002928WA SG 11202002928W A SG11202002928W A SG 11202002928WA SG 11202002928W A SG11202002928W A SG 11202002928WA SG 11202002928W A SG11202002928W A SG 11202002928WA
Authority
SG
Singapore
Prior art keywords
mask
semiconductor device
phase shift
manufacturing semiconductor
mask blank
Prior art date
Application number
SG11202002928WA
Other languages
English (en)
Inventor
Osamu Nozawa
Yasutaka Horigome
Hitoshi Maeda
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202002928WA publication Critical patent/SG11202002928WA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
SG11202002928WA 2017-11-24 2018-11-20 Mask blank, phase shift mask, and method of manufacturing semiconductor device SG11202002928WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017225528 2017-11-24
PCT/JP2018/042813 WO2019102990A1 (ja) 2017-11-24 2018-11-20 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法

Publications (1)

Publication Number Publication Date
SG11202002928WA true SG11202002928WA (en) 2020-04-29

Family

ID=66631994

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202002928WA SG11202002928WA (en) 2017-11-24 2018-11-20 Mask blank, phase shift mask, and method of manufacturing semiconductor device

Country Status (7)

Country Link
US (1) US11333966B2 (zh)
JP (2) JP6526938B1 (zh)
KR (1) KR102427106B1 (zh)
CN (1) CN111344633B (zh)
SG (1) SG11202002928WA (zh)
TW (1) TWI768153B (zh)
WO (1) WO2019102990A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7184558B2 (ja) * 2018-07-30 2022-12-06 株式会社トッパンフォトマスク 位相シフトマスクブランク、位相シフトマスク及び位相シフトマスクの製造方法
JP7192731B2 (ja) * 2019-09-27 2022-12-20 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、その製造方法、及びハーフトーン位相シフト型フォトマスク
JP2021067908A (ja) * 2019-10-28 2021-04-30 Hoya株式会社 マスクブランク、転写用マスク、及び半導体デバイスの製造方法
US11651970B2 (en) * 2020-05-19 2023-05-16 Tokyo Electron Limited Systems and methods for selective ion mass segregation in pulsed plasma atomic layer etching
EP4248270A1 (en) * 2020-11-20 2023-09-27 Entegris, Inc. Phase-shift reticle for use in photolithography

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5514499A (en) 1993-05-25 1996-05-07 Kabushiki Kaisha Toshiba Phase shifting mask comprising a multilayer structure and method of forming a pattern using the same
JP3115185B2 (ja) * 1993-05-25 2000-12-04 株式会社東芝 露光用マスクとパターン形成方法
JP2001201842A (ja) * 1999-11-09 2001-07-27 Ulvac Seimaku Kk 位相シフトフォトマスクブランクス及び位相シフトフォトマスク並びに半導体装置の製造方法
JP5215421B2 (ja) * 1999-11-09 2013-06-19 アルバック成膜株式会社 位相シフトフォトマスクブランクス及び位相シフトフォトマスク並びに半導体装置の製造方法
US7060394B2 (en) * 2001-03-30 2006-06-13 Hoya Corporation Halftone phase-shift mask blank and halftone phase-shift mask
US6844119B2 (en) 2002-07-30 2005-01-18 Hoya Corporation Method for producing a halftone phase shift mask blank, a halftone phase shift mask blank and halftone phase shift mask
US8796053B2 (en) * 2010-12-21 2014-08-05 Ultratech, Inc. Photolithographic LED fabrication using phase-shift mask
JP6185721B2 (ja) * 2013-01-29 2017-08-23 Hoya株式会社 マスクブランク、マスクブランクの製造方法、転写用マスクの製造方法、および半導体デバイスの製造方法
JP6101646B2 (ja) * 2013-02-26 2017-03-22 Hoya株式会社 位相シフトマスクブランク及びその製造方法、位相シフトマスク及びその製造方法、並びに表示装置の製造方法
JP6264238B2 (ja) 2013-11-06 2018-01-24 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク、ハーフトーン位相シフト型フォトマスク及びパターン露光方法
US9454073B2 (en) 2014-02-10 2016-09-27 SK Hynix Inc. Photomask blank and photomask for suppressing heat absorption
JP6153894B2 (ja) * 2014-07-11 2017-06-28 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法
JP6380204B2 (ja) 2015-03-31 2018-08-29 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びパターン露光方法
JP6341129B2 (ja) * 2015-03-31 2018-06-13 信越化学工業株式会社 ハーフトーン位相シフトマスクブランク及びハーフトーン位相シフトマスク
JP6087401B2 (ja) 2015-08-14 2017-03-01 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6271780B2 (ja) * 2017-02-01 2018-01-31 Hoya株式会社 マスクブランク、位相シフトマスクおよび半導体デバイスの製造方法
JP6321265B2 (ja) * 2017-05-29 2018-05-09 Hoya株式会社 マスクブランク、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法

Also Published As

Publication number Publication date
WO2019102990A1 (ja) 2019-05-31
CN111344633B (zh) 2023-02-03
KR20200087145A (ko) 2020-07-20
TW201932972A (zh) 2019-08-16
US20210364909A1 (en) 2021-11-25
US11333966B2 (en) 2022-05-17
JP7106492B2 (ja) 2022-07-26
CN111344633A (zh) 2020-06-26
KR102427106B1 (ko) 2022-08-01
JPWO2019102990A1 (ja) 2019-11-21
JP6526938B1 (ja) 2019-06-05
TWI768153B (zh) 2022-06-21
JP2019144587A (ja) 2019-08-29

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