SG11202002212YA - Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium - Google Patents
Method of manufacturing semiconductor device, substrate processing apparatus, and recording mediumInfo
- Publication number
- SG11202002212YA SG11202002212YA SG11202002212YA SG11202002212YA SG11202002212YA SG 11202002212Y A SG11202002212Y A SG 11202002212YA SG 11202002212Y A SG11202002212Y A SG 11202002212YA SG 11202002212Y A SG11202002212Y A SG 11202002212YA SG 11202002212Y A SG11202002212Y A SG 11202002212YA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor device
- recording medium
- processing apparatus
- substrate processing
- manufacturing semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76862—Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017187994 | 2017-09-28 | ||
PCT/JP2018/035216 WO2019065544A1 (ja) | 2017-09-28 | 2018-09-21 | 半導体装置の製造方法、基板処理装置及び記録媒体 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202002212YA true SG11202002212YA (en) | 2020-04-29 |
Family
ID=65901428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202002212YA SG11202002212YA (en) | 2017-09-28 | 2018-09-21 | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
Country Status (7)
Country | Link |
---|---|
US (2) | US11664275B2 (zh) |
JP (1) | JP6870103B2 (zh) |
KR (1) | KR102452913B1 (zh) |
CN (1) | CN110870047B (zh) |
SG (1) | SG11202002212YA (zh) |
TW (1) | TWI676710B (zh) |
WO (1) | WO2019065544A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7222946B2 (ja) * | 2020-03-24 | 2023-02-15 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0521387A (ja) * | 1991-07-14 | 1993-01-29 | Sony Corp | 金属薄膜の低抵抗化方法 |
JP3382031B2 (ja) * | 1993-11-16 | 2003-03-04 | 株式会社東芝 | 半導体装置の製造方法 |
JPH11145148A (ja) * | 1997-11-06 | 1999-05-28 | Tdk Corp | 熱プラズマアニール装置およびアニール方法 |
KR100631937B1 (ko) | 2000-08-25 | 2006-10-04 | 주식회사 하이닉스반도체 | 텅스텐 게이트 형성방법 |
KR100914542B1 (ko) * | 2005-02-01 | 2009-09-02 | 도쿄엘렉트론가부시키가이샤 | 반도체 장치의 제조 방법, 플라즈마 산화 처리 방법, 플라즈마 처리 장치 및 이 플라즈마 처리 장치를 제어하는 컴퓨터 판독 가능한 기억 매체 |
JPWO2009099252A1 (ja) * | 2008-02-08 | 2011-06-02 | 東京エレクトロン株式会社 | 絶縁膜のプラズマ改質処理方法 |
JP2011023730A (ja) | 2008-06-13 | 2011-02-03 | Hitachi Kokusai Electric Inc | 半導体デバイスの製造方法及び基板処理装置 |
JP4573903B2 (ja) * | 2008-06-13 | 2010-11-04 | 株式会社日立国際電気 | 半導体デバイスの製造方法及び基板処理装置 |
JP5665289B2 (ja) * | 2008-10-29 | 2015-02-04 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
JP2010232240A (ja) * | 2009-03-26 | 2010-10-14 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法、及び半導体製造装置 |
JP2012193457A (ja) * | 2009-06-10 | 2012-10-11 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び半導体装置の製造装置 |
TWI473726B (zh) | 2009-07-15 | 2015-02-21 | Nat Univ Tsing Hua | 形成圖案化金屬改質層之方法 |
TWI520177B (zh) | 2010-10-26 | 2016-02-01 | Hitachi Int Electric Inc | 基板處理裝置、半導體裝置之製造方法及電腦可讀取的記錄媒體 |
WO2012060325A1 (ja) * | 2010-11-04 | 2012-05-10 | 日産化学工業株式会社 | プラズマアニール方法及びその装置 |
JP2012151435A (ja) * | 2010-12-27 | 2012-08-09 | Elpida Memory Inc | 半導体装置の製造方法 |
JP2013182961A (ja) * | 2012-02-29 | 2013-09-12 | Toshiba Corp | 半導体製造装置及び半導体装置の製造方法 |
JP2014032986A (ja) * | 2012-08-01 | 2014-02-20 | Ps4 Luxco S A R L | 半導体装置の製造方法 |
KR101990051B1 (ko) * | 2012-08-31 | 2019-10-01 | 에스케이하이닉스 주식회사 | 무불소텅스텐 배리어층을 구비한 반도체장치 및 그 제조 방법 |
US9275865B2 (en) | 2012-10-31 | 2016-03-01 | Applied Materials, Inc. | Plasma treatment of film for impurity removal |
US9865501B2 (en) * | 2013-03-06 | 2018-01-09 | Lam Research Corporation | Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer |
KR20150093384A (ko) * | 2014-02-07 | 2015-08-18 | 에스케이하이닉스 주식회사 | 저저항 텅스텐계 매립게이트구조물을 갖는 트랜지스터 및 그 제조 방법, 그를 구비한 전자장치 |
WO2018035322A1 (en) * | 2016-08-17 | 2018-02-22 | The Regents Of The University Of California | Contact architectures for tunnel junction devices |
US11791181B2 (en) * | 2019-09-18 | 2023-10-17 | Beijing E-Town Semiconductor Technology Co., Ltd | Methods for the treatment of workpieces |
-
2018
- 2018-08-21 TW TW107129055A patent/TWI676710B/zh active
- 2018-09-21 SG SG11202002212YA patent/SG11202002212YA/en unknown
- 2018-09-21 KR KR1020207007002A patent/KR102452913B1/ko active IP Right Grant
- 2018-09-21 CN CN201880046354.6A patent/CN110870047B/zh active Active
- 2018-09-21 JP JP2019545083A patent/JP6870103B2/ja active Active
- 2018-09-21 WO PCT/JP2018/035216 patent/WO2019065544A1/ja active Application Filing
-
2020
- 2020-03-12 US US16/817,508 patent/US11664275B2/en active Active
-
2023
- 2023-04-25 US US18/306,798 patent/US20230307295A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2019065544A1 (ja) | 2019-04-04 |
JPWO2019065544A1 (ja) | 2020-04-30 |
KR20200035140A (ko) | 2020-04-01 |
CN110870047B (zh) | 2024-03-05 |
JP6870103B2 (ja) | 2021-05-12 |
US11664275B2 (en) | 2023-05-30 |
US20230307295A1 (en) | 2023-09-28 |
KR102452913B1 (ko) | 2022-10-11 |
CN110870047A (zh) | 2020-03-06 |
US20200211858A1 (en) | 2020-07-02 |
TW201920763A (zh) | 2019-06-01 |
TWI676710B (zh) | 2019-11-11 |
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