SG10202001359VA - Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium - Google Patents

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

Info

Publication number
SG10202001359VA
SG10202001359VA SG10202001359VA SG10202001359VA SG10202001359VA SG 10202001359V A SG10202001359V A SG 10202001359VA SG 10202001359V A SG10202001359V A SG 10202001359VA SG 10202001359V A SG10202001359V A SG 10202001359VA SG 10202001359V A SG10202001359V A SG 10202001359VA
Authority
SG
Singapore
Prior art keywords
semiconductor device
recording medium
processing apparatus
substrate processing
manufacturing semiconductor
Prior art date
Application number
SG10202001359VA
Inventor
Tomoyuki Yamada
Tadashi Kontani
Seiyo Nakashima
Mikio Ohno
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Publication of SG10202001359VA publication Critical patent/SG10202001359VA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
    • F16F9/00—Springs, vibration-dampers, shock-absorbers, or similarly-constructed movement-dampers using a fluid or the equivalent as damping medium
    • F16F9/32—Details
    • F16F9/34—Special valve constructions; Shape or construction of throttling passages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
SG10202001359VA 2019-03-20 2020-02-14 Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium SG10202001359VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019053470A JP6900412B2 (en) 2019-03-20 2019-03-20 Manufacturing methods and programs for substrate processing equipment and semiconductor equipment

Publications (1)

Publication Number Publication Date
SG10202001359VA true SG10202001359VA (en) 2020-10-29

Family

ID=72514672

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10202001359VA SG10202001359VA (en) 2019-03-20 2020-02-14 Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

Country Status (6)

Country Link
US (1) US10825697B2 (en)
JP (1) JP6900412B2 (en)
KR (1) KR102282154B1 (en)
CN (1) CN111725092A (en)
SG (1) SG10202001359VA (en)
TW (1) TWI724748B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114798591B (en) * 2021-01-27 2023-08-18 中国科学院微电子研究所 Air pressure regulating device and method based on wafer cleaning bin
JP7165771B2 (en) * 2021-03-18 2022-11-04 株式会社Kokusai Electric SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
CN113739500B (en) * 2021-09-03 2022-10-21 北京北方华创微电子装备有限公司 Exhaust assembly, semiconductor processing equipment and wafer cooling control method

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100251873B1 (en) * 1993-01-21 2000-04-15 마쓰바 구니유키 Vertical type heat treating apparatus
JPH07190431A (en) 1993-12-28 1995-07-28 Fujitsu Ltd Controlled wind velocity automatic alarming apparatus for local exhauster
JP2002280317A (en) * 2001-03-19 2002-09-27 Hitachi Kokusai Electric Inc Substrate-processing apparatus
JP4218825B2 (en) 2002-12-10 2009-02-04 株式会社日立国際電気 Semiconductor manufacturing equipment
JP2005183596A (en) * 2003-12-18 2005-07-07 Seiko Epson Corp Manufacturing method of heat treatment apparatus and semiconductor device
JP2007242791A (en) 2006-03-07 2007-09-20 Hitachi Kokusai Electric Inc Substrate treatment apparatus
JP5252850B2 (en) * 2007-07-30 2013-07-31 株式会社日立国際電気 Substrate processing apparatus and semiconductor device manufacturing method
JP5133013B2 (en) * 2007-09-10 2013-01-30 東京エレクトロン株式会社 Exhaust system structure of film forming apparatus, film forming apparatus, and exhaust gas treatment method
KR101066138B1 (en) * 2008-04-14 2011-09-20 가부시키가이샤 히다치 고쿠사이 덴키 Substrate processing apparatus and method of manufacturing semiconductor device
JP2011222656A (en) * 2010-04-07 2011-11-04 Hitachi Kokusai Electric Inc Substrate treatment apparatus
JP2013062271A (en) * 2011-09-12 2013-04-04 Hitachi Kokusai Electric Inc Substrate processing apparatus
KR101408084B1 (en) * 2011-11-17 2014-07-04 주식회사 유진테크 Apparatus for processing substrate including auxiliary gas supply port
WO2013141371A1 (en) 2012-03-22 2013-09-26 株式会社日立国際電気 Substrate processing device and substrate processing method
KR101740613B1 (en) * 2012-09-27 2017-05-26 가부시키가이샤 히다치 고쿠사이 덴키 Substrate processing apparatus, substrate processing method, and semiconductor device manufacturing method
JP6042160B2 (en) * 2012-10-03 2016-12-14 東京エレクトロン株式会社 Film forming method and film forming apparatus
JP6155706B2 (en) * 2013-03-06 2017-07-05 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing equipment
KR101594932B1 (en) * 2014-04-01 2016-02-18 피에스케이 주식회사 Apparatus and method for processing substrate
KR101652164B1 (en) * 2014-07-10 2016-09-09 주식회사 포스코건설 Particles pre-treatment process device of boiler and exhausting gas treatment method of heating power station using the same
CN111463118B (en) * 2015-01-21 2024-04-30 株式会社国际电气 Substrate processing apparatus, method for manufacturing semiconductor device, and substrate processing method
WO2017022366A1 (en) 2015-08-04 2017-02-09 株式会社日立国際電気 Substrate processing device, semiconductor device manufacturing method, and recording medium
KR20240017095A (en) * 2016-06-30 2024-02-06 가부시키가이샤 코쿠사이 엘렉트릭 Substrate processing device, method for manufacturing semiconductor device, and recording medium
JP6484601B2 (en) * 2016-11-24 2019-03-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Processing apparatus and semiconductor device manufacturing method

Also Published As

Publication number Publication date
CN111725092A (en) 2020-09-29
KR20200112654A (en) 2020-10-05
JP6900412B2 (en) 2021-07-07
JP2020155625A (en) 2020-09-24
KR102282154B1 (en) 2021-07-27
US10825697B2 (en) 2020-11-03
TW202036818A (en) 2020-10-01
TWI724748B (en) 2021-04-11
US20200303219A1 (en) 2020-09-24

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