SG11201903694TA - Sputtering target for magnetic recording media - Google Patents

Sputtering target for magnetic recording media

Info

Publication number
SG11201903694TA
SG11201903694TA SG11201903694TA SG11201903694TA SG11201903694TA SG 11201903694T A SG11201903694T A SG 11201903694TA SG 11201903694T A SG11201903694T A SG 11201903694TA SG 11201903694T A SG11201903694T A SG 11201903694TA SG 11201903694T A SG11201903694T A SG 11201903694TA
Authority
SG
Singapore
Prior art keywords
recording media
sputtering target
magnetic recording
metallic
magnetic
Prior art date
Application number
SG11201903694TA
Other languages
English (en)
Inventor
Kim Kong Tham
Ryousuke Kushibiki
Toshiya Yamamoto
Shin Saito
Shintaro Hinata
Original Assignee
Tanaka Precious Metal Ind
Univ Tohoku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Precious Metal Ind, Univ Tohoku filed Critical Tanaka Precious Metal Ind
Publication of SG11201903694TA publication Critical patent/SG11201903694TA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0688—Cermets, e.g. mixtures of metal and one or more of carbides, nitrides, oxides or borides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
SG11201903694TA 2016-11-01 2017-10-11 Sputtering target for magnetic recording media SG11201903694TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016214684 2016-11-01
PCT/JP2017/036824 WO2018083951A1 (ja) 2016-11-01 2017-10-11 磁気記録媒体用スパッタリングターゲット

Publications (1)

Publication Number Publication Date
SG11201903694TA true SG11201903694TA (en) 2019-05-30

Family

ID=62076117

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201903694TA SG11201903694TA (en) 2016-11-01 2017-10-11 Sputtering target for magnetic recording media

Country Status (7)

Country Link
US (1) US10971181B2 (ja)
JP (1) JP6958819B2 (ja)
CN (1) CN109923610B (ja)
MY (1) MY192454A (ja)
SG (1) SG11201903694TA (ja)
TW (1) TWI657158B (ja)
WO (1) WO2018083951A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6627993B2 (ja) * 2018-03-01 2020-01-08 三菱マテリアル株式会社 Ｃｕ−Ｎｉ合金スパッタリングターゲット
US11618944B2 (en) * 2018-08-09 2023-04-04 Jx Nippon Mining & Metals Corporation Sputtering target, magnetic film, and perpendicular magnetic recording medium
JPWO2020031459A1 (ja) * 2018-08-09 2021-08-02 Ｊｘ金属株式会社 スパッタリングターゲット、グラニュラ膜および垂直磁気記録媒体
TWI680198B (zh) * 2018-09-26 2019-12-21 日商Ｊｘ金屬股份有限公司 強磁性材料濺射靶及其製造方法與磁記錄膜的製造方法
JP7125061B2 (ja) * 2019-01-11 2022-08-24 田中貴金属工業株式会社 垂直磁気記録媒体
TWI812869B (zh) * 2019-07-18 2023-08-21 日商田中貴金屬工業股份有限公司 磁性記錄媒體用濺鍍靶

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060289294A1 (en) * 2005-06-24 2006-12-28 Heraeus, Inc. Enhanced oxygen non-stoichiometry compensation for thin films
JP5155565B2 (ja) * 2007-01-04 2013-03-06 三井金属鉱業株式会社 ＣｏＣｒＰｔ系スパッタリングターゲットおよびその製造方法
JP5204460B2 (ja) * 2007-10-24 2013-06-05 三井金属鉱業株式会社 磁気記録膜用スパッタリングターゲットおよびその製造方法
JP5623552B2 (ja) * 2010-12-20 2014-11-12 Jx日鉱日石金属株式会社 Ｆｅ−Ｐｔ系強磁性材スパッタリングターゲット及びその製造方法
CN104081458B (zh) * 2012-01-18 2017-05-03 吉坤日矿日石金属株式会社 Co‑Cr‑Pt 系溅射靶及其制造方法
JP6144570B2 (ja) * 2013-08-05 2017-06-07 昭和電工株式会社 磁気記録媒体の製造方法、磁気記録媒体及び磁気記録再生装置
JP6490589B2 (ja) * 2013-10-29 2019-03-27 田中貴金属工業株式会社 マグネトロンスパッタリング用ターゲット
JP6416497B2 (ja) 2014-05-02 2018-10-31 田中貴金属工業株式会社 スパッタリングターゲットおよびその製造方法
MY184033A (en) * 2015-02-19 2021-03-17 Jx Nippon Mining & Metals Corp Sputtering target for forming magnetic thin film

Also Published As

Publication number Publication date
WO2018083951A1 (ja) 2018-05-11
US20200105297A1 (en) 2020-04-02
CN109923610B (zh) 2021-01-29
JP6958819B2 (ja) 2021-11-02
MY192454A (en) 2022-08-21
JPWO2018083951A1 (ja) 2019-10-17
TW201819659A (zh) 2018-06-01
CN109923610A (zh) 2019-06-21
TWI657158B (zh) 2019-04-21
US10971181B2 (en) 2021-04-06

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