SG11201808739XA - Alloy for seed layers of magnetic recording media, sputtering target material and magnetic recording medium - Google Patents

Alloy for seed layers of magnetic recording media, sputtering target material and magnetic recording medium

Info

Publication number
SG11201808739XA
SG11201808739XA SG11201808739XA SG11201808739XA SG11201808739XA SG 11201808739X A SG11201808739X A SG 11201808739XA SG 11201808739X A SG11201808739X A SG 11201808739XA SG 11201808739X A SG11201808739X A SG 11201808739XA SG 11201808739X A SG11201808739X A SG 11201808739XA
Authority
SG
Singapore
Prior art keywords
magnetic recording
alloy
target material
sputtering target
recording medium
Prior art date
Application number
SG11201808739XA
Inventor
Miyuki Imoto
Noriaki Matsubara
Original Assignee
Sanyo Special Steel Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Special Steel Co Ltd filed Critical Sanyo Special Steel Co Ltd
Publication of SG11201808739XA publication Critical patent/SG11201808739XA/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
    • G11B5/7379—Seed layer, e.g. at least one non-magnetic layer is specifically adapted as a seed or seeding layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C23C14/025—Metallic sublayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)

Abstract

An object of the present invention is to provide an alloy for a seed layer of a Ni-based magnetic recording medium as a seed layer of a perpendicular magnetic recording medium, which 5 has a small crystal grain size, and a sputtering target material. Specifically, the Ni-based sputtering target material according to the present invention includes a Ni-Fe-Co-M alloy, wherein the Ni-Fe-Co-M alloy contains 2 to 20 at.% in total of one or more M1 elements selected from Au, Ag, Pd, Rh, Ir, Ru, Re, and Pt, 10 and the balance including Ni, Fe, Co, and unavoidable impurities, and wherein the ratio of the contents of Ni, Fe, and Co is Ni:Fe:Co=100 to 20:0 to 50:0 to 60 in terms of at.%.
SG11201808739XA 2016-04-13 2017-04-05 Alloy for seed layers of magnetic recording media, sputtering target material and magnetic recording medium SG11201808739XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016080217A JP6431496B2 (en) 2016-04-13 2016-04-13 Alloy for seed layer of magnetic recording medium, sputtering target material, and magnetic recording medium
PCT/JP2017/014181 WO2017179466A1 (en) 2016-04-13 2017-04-05 Alloy for seed layers of magnetic recording media, sputtering target material and magnetic recording medium

Publications (1)

Publication Number Publication Date
SG11201808739XA true SG11201808739XA (en) 2018-11-29

Family

ID=60041503

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201808739XA SG11201808739XA (en) 2016-04-13 2017-04-05 Alloy for seed layers of magnetic recording media, sputtering target material and magnetic recording medium

Country Status (6)

Country Link
JP (1) JP6431496B2 (en)
CN (1) CN109074824B (en)
MY (1) MY190813A (en)
SG (1) SG11201808739XA (en)
TW (1) TWI746540B (en)
WO (1) WO2017179466A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7118804B2 (en) 2018-08-17 2022-08-16 キオクシア株式会社 Semiconductor device manufacturing method
JP7385370B2 (en) * 2019-05-07 2023-11-22 山陽特殊製鋼株式会社 Ni-based sputtering target and magnetic recording medium
JP7274361B2 (en) * 2019-06-19 2023-05-16 山陽特殊製鋼株式会社 Alloy for seed layer of magnetic recording media
CN110423934B (en) * 2019-08-27 2021-03-30 哈尔滨理工大学 High-temperature high-toughness Ni-Co-Mn-Sn-Cu alloy with large magnetocaloric effect, and preparation method and application thereof

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4810360B2 (en) * 2006-08-31 2011-11-09 石福金属興業株式会社 Magnetic thin film
JP2008226416A (en) * 2007-03-16 2008-09-25 Fuji Electric Device Technology Co Ltd Perpendicular magnetic recording medium and its manufacturing method
JP5015901B2 (en) * 2008-12-01 2012-09-05 昭和電工株式会社 Thermally assisted magnetic recording medium and magnetic recording / reproducing apparatus
JP5384969B2 (en) * 2009-02-25 2014-01-08 山陽特殊製鋼株式会社 Sputtering target material and thin film produced using the same
JP5370917B2 (en) * 2009-04-20 2013-12-18 日立金属株式会社 Method for producing Fe-Co-Ni alloy sputtering target material
JP5726615B2 (en) * 2010-11-22 2015-06-03 山陽特殊製鋼株式会社 Alloy for seed layer of magnetic recording medium and sputtering target material
JP6302153B2 (en) * 2011-09-28 2018-03-28 山陽特殊製鋼株式会社 Soft magnetic thin film layer and perpendicular magnetic recording medium in perpendicular magnetic recording medium
JP6081134B2 (en) * 2012-10-17 2017-02-15 株式会社日立製作所 Perpendicular magnetic recording medium and magnetic storage device
JP2015111482A (en) * 2013-12-06 2015-06-18 株式会社東芝 Perpendicular magnetic recording medium and magnetic recording/reproducing device

Also Published As

Publication number Publication date
TW201807229A (en) 2018-03-01
CN109074824A (en) 2018-12-21
MY190813A (en) 2022-05-12
JP2017191625A (en) 2017-10-19
JP6431496B2 (en) 2018-11-28
WO2017179466A1 (en) 2017-10-19
TWI746540B (en) 2021-11-21
CN109074824B (en) 2020-10-09

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