SG11201806747QA - Double-side polishing method and double-side polishing apparatus - Google Patents

Double-side polishing method and double-side polishing apparatus

Info

Publication number
SG11201806747QA
SG11201806747QA SG11201806747QA SG11201806747QA SG11201806747QA SG 11201806747Q A SG11201806747Q A SG 11201806747QA SG 11201806747Q A SG11201806747Q A SG 11201806747QA SG 11201806747Q A SG11201806747Q A SG 11201806747QA SG 11201806747Q A SG11201806747Q A SG 11201806747QA
Authority
SG
Singapore
Prior art keywords
double
side polishing
polishing apparatus
polishing method
polishing
Prior art date
Application number
SG11201806747QA
Other languages
English (en)
Inventor
Yuki Tanaka
Shiro Amagai
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of SG11201806747QA publication Critical patent/SG11201806747QA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02016—Backside treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
SG11201806747QA 2016-02-16 2017-02-01 Double-side polishing method and double-side polishing apparatus SG11201806747QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016027136 2016-02-16
PCT/JP2017/003568 WO2017141704A1 (ja) 2016-02-16 2017-02-01 両面研磨方法及び両面研磨装置

Publications (1)

Publication Number Publication Date
SG11201806747QA true SG11201806747QA (en) 2018-09-27

Family

ID=59626074

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201806747QA SG11201806747QA (en) 2016-02-16 2017-02-01 Double-side polishing method and double-side polishing apparatus

Country Status (8)

Country Link
US (1) US11325220B2 (zh)
JP (1) JP6566112B2 (zh)
KR (1) KR102577033B1 (zh)
CN (1) CN108369908B (zh)
DE (1) DE112017000281T5 (zh)
SG (1) SG11201806747QA (zh)
TW (1) TWI705489B (zh)
WO (1) WO2017141704A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109590898A (zh) * 2019-01-25 2019-04-09 西安奕斯伟硅片技术有限公司 工件研磨垫、晶圆双面研磨方法及其研磨装置
JP2020171996A (ja) * 2019-04-11 2020-10-22 信越半導体株式会社 両面研磨方法
CN111599673A (zh) * 2020-06-03 2020-08-28 福建阿石创新材料股份有限公司 一种钼晶圆片的磨抛方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05177539A (ja) * 1991-12-24 1993-07-20 Sumitomo Electric Ind Ltd 両面ポリッシュ装置によるウェハ研磨方法
DE10196115B4 (de) * 2000-04-24 2011-06-16 Sumitomo Mitsubishi Silicon Corp. Verfahren zum Polieren eines Halbleiterwafers
JP3797065B2 (ja) * 2000-05-31 2006-07-12 株式会社Ｓｕｍｃｏ 片面鏡面ウェーハの製造方法
JP3791302B2 (ja) * 2000-05-31 2006-06-28 株式会社Ｓｕｍｃｏ 両面研磨装置を用いた半導体ウェーハの研磨方法
US6582279B1 (en) * 2002-03-07 2003-06-24 Hitachi Global Storage Technologies Netherlands B.V. Apparatus and method for reclaiming a disk substrate for use in a data storage device
JP2003260656A (ja) * 2002-03-08 2003-09-16 Sumitomo Mitsubishi Silicon Corp 両面研磨装置用研磨布のドレッシング方法およびこれに用いられるドレッシング治具
US7364495B2 (en) * 2002-03-28 2008-04-29 Etsu Handotai Co., Ltd. Wafer double-side polishing apparatus and double-side polishing method
KR20050055531A (ko) * 2003-12-08 2005-06-13 주식회사 실트론 웨이퍼 연마 방법
JP2007214368A (ja) * 2006-02-09 2007-08-23 Hitachi Cable Ltd Ｍｏｖｐｅ用化合物半導体ウェハ、その製造方法及びｍｏｖｐｅ用化合物半導体エピタキシャルウェハの製造方法
DE102007049811B4 (de) * 2007-10-17 2016-07-28 Peter Wolters Gmbh Läuferscheibe, Verfahren zur Beschichtung einer Läuferscheibe sowie Verfahren zur gleichzeitigen beidseitigen Material abtragenden Bearbeitung von Halbleiterscheiben
JP5547472B2 (ja) * 2009-12-28 2014-07-16 株式会社荏原製作所 基板研磨装置、基板研磨方法、及び基板研磨装置の研磨パッド面温調装置
JP5768659B2 (ja) * 2011-10-31 2015-08-26 株式会社Sumco 両面研磨装置の研磨布ドレッシング方法
JP2014094424A (ja) * 2012-11-08 2014-05-22 Toyo Tire & Rubber Co Ltd 積層研磨パッド
JP5896884B2 (ja) * 2012-11-13 2016-03-30 信越半導体株式会社 両面研磨方法
DE102013201663B4 (de) * 2012-12-04 2020-04-23 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
JP5807648B2 (ja) * 2013-01-29 2015-11-10 信越半導体株式会社 両面研磨装置用キャリア及びウェーハの両面研磨方法
DE102013202488B4 (de) * 2013-02-15 2015-01-22 Siltronic Ag Verfahren zum Abrichten von Poliertüchern zur gleichzeitig beidseitigen Politur von Halbleiterscheiben
DE102013206613B4 (de) * 2013-04-12 2018-03-08 Siltronic Ag Verfahren zum Polieren von Halbleiterscheiben mittels gleichzeitiger beidseitiger Politur
JP6003800B2 (ja) 2013-05-16 2016-10-05 信越半導体株式会社 ウェーハの両面研磨方法及び両面研磨システム
JP6578089B2 (ja) * 2014-07-17 2019-09-18 信越半導体株式会社 ウェーハ保持用キャリア並びにそれを用いたウェーハの両面研磨方法

Also Published As

Publication number Publication date
US11325220B2 (en) 2022-05-10
JPWO2017141704A1 (ja) 2018-09-27
JP6566112B2 (ja) 2019-08-28
KR102577033B1 (ko) 2023-09-12
KR20180115260A (ko) 2018-10-22
TW201743374A (zh) 2017-12-16
TWI705489B (zh) 2020-09-21
WO2017141704A1 (ja) 2017-08-24
CN108369908A (zh) 2018-08-03
US20180361530A1 (en) 2018-12-20
CN108369908B (zh) 2022-04-15
DE112017000281T5 (de) 2018-09-13

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